Low‐Temperature Solution Synthesis of Few‐Layer 1T ′‐MoTe2 Nanostructures Exhibiting Lattice Compression

Molybdenum ditelluride, MoTe₂, is emerging as an important transition‐metal dichalcogenide (TMD) material because of its favorable properties relative to other TMDs. The 1T ′ polymorph of MoTe₂ is particularly interesting because it is semimetallic with bands that overlap near the Fermi level, but semiconducting 2H‐MoTe₂ is more stable and therefore more accessible synthetically. Metastable 1T ′‐MoTe₂ forms directly in solution at 300 °C as uniform colloidal nanostructures that consist of few‐layer nanosheets, which appear to exhibit an approx. 1 % lateral lattice compression relative to the bulk analogue. Density functional theory calculations suggest that small grain sizes and polycrystallinity stabilize the 1T ′ phase in the MoTe₂ nanostructures and suppress its transformation back to the more stable 2H polymorph through grain boundary pinning. Raman spectra of the 1T ′‐MoTe₂ nanostructures exhibit a laser energy dependence, which could be caused by electronic transitions.     

Theoretical investigation of the stability,electronic and magnetic properties of thiolated single‐wall carbon nanotubes

The addition of SH and OH groups to single‐wall carbon nanotubes (SWCNTs) was investigated employing first principles calculations. In the case of the semiconducting (10, 0) SWCNT the SWCNT‐SH binding energy is weak, 2–4 kcal/mol. However, for the metallic (5, 5) SWCNT it is larger, 7–9 kcal/mol. Thus metallic SWCNTs seem to be more reactive to SH than the semiconducting ones. Indeed, the (6, 6) SWCNT is more reactive to SH than the (10, 0) SWCNT, by 2–3 kcal/mol, something that can be explained only considering the electronic structure of the tube, because the (6, 6) has a larger diameter. The binding energies are larger for the addition of the OH group, 25 and 30 kcal/mol for the (10, 0) and (5, 5) SWCNTs, respectively. When a single OH or SH group is attached to the metallic SWCNTs, we observe important changes in the DOS at the Fermi level. However, when multiple SH groups are attached, the changes in the electronic and magnetic properties depend on the position of the SH groups. The small binding energy found for the SH addition indicates that the successful functionalization of SWCNTs with SH, SCH₃, and S(CH₂)_nSH groups is mostly due to the presence of defects created after acid treatment and to a minor extent by the metallic tubes present in the samples. Perfect semiconducting SWCNTs showed very low reactivity against the SH group. © 2008 Wiley Periodicals, Inc. Int J Quantum Chem, 2009     

Selective polycarboxylation of semiconducting single-walled carbon nanotubes by reductive sidewall functionalization

The efficient and controllable synthesis, the detailed characterization, and the chemical postfunctionalization of polycarboxylated single-walled carbon nanotubes SWCNT(COOH)(n) are reported. This innovative covalent sidewall functionalization method is characterized by (a) the preservation of the integrity of the entire σ-framework of SWCNTs; (b) the possibility of achieving very high degrees of addition; (c) control of the functionalization degrees by the variation of the reaction conditions (reaction time, ultrasonic treatment, pressure); (d) the identification of conditions for the selective functionalization of semiconducting carbon nanotubes, leaving unfunctionalized metallic tubes behind; (e) the proof that the introduced carboxylic acid functionalities can serve as versatile anchor points for the coupling to functional molecules; and (f) the application of a subsequent thermal degradation step of the functionalized semiconducting tubes leaving behind intact metallic SWCNTs. Functional derivatives have been characterized in detail by means of Raman, UV-vis/nIR, IR, and fluorescence spectroscopy as well as by thermogravimetric analysis combined with mass spectrometry, atomic force microscopy, and zeta-potential measurements.     

A First-Principles Study of C3N Nanostructures: Control and Engineering of the Electronic and Magnetic Properties of Nanosheets,Tubes and Ribbons

Using first-principles calculations we systematically investigate the atomic, electronic and magnetic properties of novel two-dimensional materials (2DM) with a stoichiometry C₃N which has recently been synthesized. We investigate how the number of layers affect the electronic properties by considering monolayer, bilayer and trilayer structures, with different stacking of the layers. We find that a transition from semiconducting to metallic character occurs which could offer potential applications in future nanoelectronic devices. We also study the affect of width of C₃N nanoribbons, as well as the radius and length of C₃N nanotubes, on the atomic, electronic and magnetic properties. Our results show that these properties can be modified depending on these dimensions, and depend markedly on the nature of the edge states. Functionalization of the nanostructures by the adsorption of H adatoms is found induce metallic, half-metallic, semiconducting and ferromagnetic behavior, which offers an approach to tailor the properties, as can the application of strain. Our calculations give insight into this new family of C₃N nanostructures, which reveal unusual electronic and magnetic properties, and may have great potential in applications such as sensors, electronics and optoelectronic at the nanoscale.     

Controlled Covalent Functionalization of 2 H-MoS2 with Molecular or Polymeric Adlayers

Most air-stable 2D materials are relatively inert, which makes their chemical modification difficult. In particular, in the case of MoS₂, the semiconducting 2 H-MoS₂ is much less reactive than its metallic counterpart, 1T-MoS₂. As a consequence, there are hardly any reliable methods for the covalent modification of 2 H-MoS₂. An ideal method for the chemical functionalization of such materials should be both mild, not requiring the introduction of a large number of defects, and versatile, allowing for the decoration with as many different functional groups as possible. Herein, a comprehensive study on the covalent functionalization of 2 H-MoS₂ with maleimides is presented. The use of a base (Et₃N) leads to the in situ formation of a succinimide polymer layer, covalently connected to MoS₂. In contrast, in the absence of base, functionalization stops at the molecular level. Moreover, the functionalization protocol is mild (occurs at room temperature), fast (nearly complete in 1 h), and very flexible (11 different solvents and 10 different maleimides tested). In practical terms, the procedures described here allow for the chemist to manipulate 2 H-MoS₂ in a very flexible way, decorating it with polymers or molecules, and with a wide range of functional groups for subsequent modification. Conceptually, the spurious formation of an organic polymer might be general to other methods of functionalization of 2D materials, where a large excess of molecular reagents is typically used.     

Electronically selective chemical functionalization of carbon nanotubes: correlation between Raman spectral and electrical responses

Single-walled carbon nanotubes (SWNTs) demonstrate remarkable electronic and mechanical properties useful in developing areas such as nanoelectromechanical systems and flexible electronics. However, the highly inhomogeneous electronic distribution arising from different diameters and chirality in any given as-synthesized SWNT samples imposes severe limitations. Recently demonstrated selective chemical functionalization methods may provide a simple scalable means of eliminating metallic tubes from SWNT transistors and electronic devices. Here, we report on combined electron transport and Raman studies on the reaction of 4-bromobenzene diazonium tetrafluoroborate directly with single and networks of SWNT transistors. First, Raman studies are carried out on isolated individual SWNTs grown on SiO2/Si substrates by chemical vapor deposition with and without metal contacts. Metallic tubes are found to have, on average, higher reactivity toward diazonium reagents. However, a considerable degradation of electrical properties of semiconducting tubes occurs if the reaction is carried out to the point where the conductivity of metallic tubes is significantly suppressed. Insights from single-tube studies are then applied to elucidate the electrical and the Raman responses of SWNT random network transistors of different channel lengths to chemical functionalization.     

Construction of direct Z-Scheme photocatalysts for overall water splitting using two-dimensional van der waals heterojunctions of metal dichalcogenides

The direct Z-scheme system constructed by two-dimensional (2D) materials is an efficient route for hydrogen production from photocatalytic water splitting. In the present work, the 2D van der Waals (vdW) heterojunctions of MoSe₂/SnS₂, MoSe₂/SnSe₂, MoSe₂/CrS₂, MoTe₂/SnS₂, MoTe₂/SnSe₂, and MoTe₂/CrS₂ are proposed to be promising candidates for direct Z-scheme photocatalysts and verified by first principles calculations. Perpendicular electric field is induced in these 2D vdW heterojunctions, which enhances the efficiency of solar energy utilization. Replacing MoSe₂ with MoTe₂ not only facilitates the interlayer carrier migration, but also improves the optical absorption properties for these heterojunctions. Excitingly, the 2D vdW MoTe₂/CrS₂ heterojunction is demonstrated, for the first time, to be 2D near-infrared-light driven photocatalyst for direct Z-scheme water splitting. © 2018 Wiley Periodicals, Inc.     

Unraveling the 13C NMR chemical shifts in single-walled carbon nanotubes: dependence on diameter and electronic structure

The atomic specificity afforded by nuclear magnetic resonance (NMR) spectroscopy could enable detailed mechanistic information about single-walled carbon nanotube (SWCNT) functionalization as well as the noncovalent molecular interactions that dictate ground-state charge transfer and separation by electronic structure and diameter. However, to date, the polydispersity present in as-synthesized SWCNT populations has obscured the dependence of the SWCNT (13)C chemical shift on intrinsic parameters such as diameter and electronic structure, meaning that no information is gleaned for specific SWCNTs with unique chiral indices. In this article, we utilize a combination of (13)C labeling and density gradient ultracentrifugation (DGU) to produce an array of (13)C-labeled SWCNT populations with varying diameter, electronic structure, and chiral angle. We find that the SWCNT isotropic (13)C chemical shift decreases systematically with increasing diameter for semiconducting SWCNTs, in agreement with recent theoretical predictions that have heretofore gone unaddressed. Furthermore, we find that the (13)C chemical shifts for small diameter metallic and semiconducting SWCNTs differ significantly, and that the full-width of the isotropic peak for metallic SWCNTs is much larger than that of semiconducting nanotubes, irrespective of diameter.     

Ruthenium(IV) pyrochlore oxides: Realization of novel electronic properties through substitution at A- and B-sites

We describe an exploratory investigation of the structure and electronic properties of new ruthenium(IV) pyrochlore oxides and their manganese-substituted derivatives. Our investigations have revealed several, hitherto unreported, electronic ground states for these materials: a metallic and Pauli paramagnetic state for BiPbRu₂O_6.5 that turns into a semiconducting ferromagnetic spin-glass state at 50 K for BiPbRuMnO_6.5; a metallic state that likely shows a charge density wave (CDW) instability at 50–225 K for Bi_1.50Zn_0.50Ru₂O_6.75 that is suppressed by manganese substitution in Bi_1.50Zn_0.50Ru_1.75Mn_0.25O_6.50; and a metallic ferromagnetic spin-glass like state for Pb₂Ru_1.75Mn_0.25O_6.15. The results indeed affirm the richness of the electronic properties of ruthenium-based metal oxides.     

Precise Tuning of the Charge Transfer Kinetics and Catalytic Properties of MoS2 Materials via Electrochemical Methods

MoS₂ has become particularly popular for its catalytic properties towards the hydrogen evolution reaction (HER). It has been shown that the metallic 1T phase of MoS₂, obtained by chemical exfoliation after lithium intercalation, possesses enhanced catalytic activity over the semiconducting 2H phase due to the improved conductivity properties which facilitate charge‐transfer kinetics. Here we demonstrate a simple electrochemical method to precisely tune the electron‐transfer kinetics as well as the catalytic properties of both exfoliated and bulk MoS₂‐based films. A controlled reductive or oxidative electrochemical treatment can alter the surface properties of the film with consequently improved or hampered electrochemical and catalytic properties compared to the untreated film. Density functional theory calculations were used to explain the electrochemical activation of MoS₂. The electrochemical tuning of electrocatalytic properties of MoS₂ opens the doors to scalable and facile tailoring of MoS₂‐based electrochemical devices.     

A first principles study of NO2 chemisorption on silicon carbide nanotubes

Using methods based on first principles, we find that an NO₂ molecules can be chemisorbed on silicon carbide nanotubes (SiCNTs) with an appreciable binding energy (∼−1.0 eV), and that this is not the case for either carbon nanotubes (CNTs) or boron nitride nanotubes (BNNTs). A detailed analysis of the energetics, geometry, and electronic structure of various isomers of the complexes was performed. The SiCNT–NO₂ complex can be metallic or nonmetallic depending on the type of adsorption site and the chirality of the tube. However, our analysis of the electronic structure predicts that a strong p-type effect of the adsorption turns semiconducting systems into metallic ones at room temperature, irrespective of the chirality of the tube.     

Nanostructured metal sulfide surfaces by ion exchange processes

A scalable preparation procedure for structured semiconducting sulfide films from zinc oxide by means of subsequent anion and cation exchange processes is described, which is low in cost and waste production. The starting material was columnar ZnO films, which were grown in electrodeposition by O₂ reduction. Here, their detailed morphology depends on the substrate and the process parameters. These films were converted to ZnS by reaction with H₂S gas or sulfur vapour at temperatures around 450 °C. In this process the columnar morphology of the ZnO is preserved. A partial conversion is also possible and leads to tubular ZnS films. Then the ZnS films were reacted in metal salt solutions to convert them further to Ag₂S, Cu₂S, Bi₂S₃ and Sb₂S₃ films. Here the columnar or tubular morphology was, in general, also reproduced, but its outer quality depends on the interaction of the involved processes, namely dissolution, precipitation and exchange inside the solid. This was further examined by a series of Ag₂S films from modified solutions.Presented at the 3rd International Symposium on Electrochemical Processing of Tailored Materials held at the 53rd Annual Meeting of the International Society of Electrochemistry, 15–20 September 2002, Düsseldorf, Germany     

Electronic transport and optical properties of indium oxide thin films prepared by thermal oxidation

Indium oxide (In₂O₃) thin films were prepared using thermal oxidation of metallic films. Indium metallic thin films were deposited onto glass substrates, by vacuum thermal evaporation. Optical and electronic transport properties of thermally oxidized In₂O₃ films were investigated and these properties were correlated with their preparation conditions, more exactly with oxidation temperatures (T_ox = 623 K, 673 K and 700 K, respectively). Structural analysis, investigated by X-ray diffraction and electron diffraction, reveals that the obtained films possess a polycrystalline structure. The temperature dependence of electrical conductivity was studied using surface-type cells with Ag electrodes. The electronic transport mechanism, in respective films, is discussed in terms of crystallite boundary trapping, proposed by Seto. Some characteristic parameters such as energy barrier, impurity concentration, distribution of interface states, were determined. Transmission and reflection spectra were recorded and by using the values of these coefficients, some optical parameters were calculated (absorption coefficient, optical band gap, refractive index).     

Impact of substrate on some physical properties of PrFe0.5Ni0.5O3 thin films

We carried out the structural, morphological and transport study of PrFe_0.5Ni_0.5O₃ thin films prepared by pulsed laser deposition (PLD) over various substrates. Different substrates like LaAlO₃ (001),GaAs(001) and Si(001) were used for deposition to understand effect of lattice mismatch on various physical properties. The film deposited on LaAlO₃ was of best quality with well (001)-oriented and having good crystalline properties. Whereas, film deposited on GaAs(001) is well textured. Both films shows semiconducting behavior and resistance of the film deposited on GaAs(001) shows larger than that of film deposited on LAO. However, film deposited on Si, also shows polycrystalline growth with unusual metallic behavior. We tried to correlate this behavior with strain-induced growth of these films. Other possibilities for this unusual trend is also explored.     

In situ conductivity measurements of LiMn2O4 thin films during lithium insertion/extraction by using interdigitated microarray electrodes

Thin films of LiMn₂O₄ have been prepared by RF magnetron sputtering on interdigitated microarray electrodes. In situ conductivity–potential profiles and cyclic voltammograms during extraction/insertion processes of Li ions were obtained simultaneously in nonaqueous and aqueous electrolyte solutions (1 M LiClO₄/propylene carbonate and 1 M LiCl/water). The electronic conductivity of Li_{1– x} Mn₂O₄ was found not to show metallic transition and maintain its semiconducting state during the extraction/insertion of Li ion. A slight decrease in conductivity was observed with increasing the anodic potential, i.e., with increasing x (lithium extraction) and recovered reversibly when the potential returned to the cathodic side (re-insertion of Li ions). Similar results were obtained in both aqueous and nonaqueous electrolyte solutions. Received: 17 June 1997 / Accepted: 2 January 1998     

Untersuchungen der Zersetzungsgleichgewichte und zur Phasenbreite der Molybdäntelluride

Investigation of Decomposition Equilibria and the Phase Fields of Molybdenum Tellurides The Te₂-pressure over Mo₃Te₄ and MoTe₂ as well as over equilibrium mixtures of Mo+Mo₃Te₄, Mo₃Te₄+MoTe₂, and MoTe₂+Te.l, respectively, has been measured directly between 1100 and 1373 K. No remarkable deviations from stoichiometry exist for MoTe₂ as well as for Mo₃Te₄. The coexistence pressures are for Mo/Mo₃Te₄: lg p/10⁵ Pa = 5.56—9879/T, and for Mo₃Te₄/MoTe₂: lg p/10⁵ Pa = 8.398—11790 /T. Third law enthalpies are derived: Δ_fH°(298, Mo₃Te₄) = —195.5±10 with S°(298) = 268, and Δ_fH°(298, αMoTe₂) = —89.5 ± 11 with S°(298) = 115.3 (values in kJ/mol and J mol^?1 K^?1, respectively).     

Modeling adsorbate‐induced property changes of carbon nanotubes

Because of their potential for chemical functionalization, carbon nanotubes (CNTs) are promising candidates for the development of devices such as nanoscale sensors or transistors with novel gating mechanisms. However, the mechanisms underlying the property changes due to functionalization of CNTs still remain subject to debate. Our goal is to reliably model one possible mechanism for such chemical gating: adsorption directly on the nanotubes. Within a Kohn–Sham density functional theory framework, such systems would ideally be described using periodic boundary conditions. Truncating the tube and saturating the edges in practice often offers a broader selection of approximate exchange–correlation functionals and analysis methods. By comparing the two approaches systematically for NH₃ and NO₂ adsorbates on semiconducting and metallic CNTs, we find that while structural properties are less sensitive to the details of the model, local properties of the adsorbate may be as sensitive to truncation as they are to the choice of exchange–correlation functional, and are similarly challenging to compute as adsorption energies. This suggests that these adsorbate effects are nonlocal. © 2017 Wiley Periodicals, Inc.     

Two-Dimensional Conjugated Polymer Synthesized by Interfacial Suzuki Reaction: Towards Electronic Device Applications

Preparing two-dimensional conjugated polymers (2DCPs) with desirable structures and semiconducting properties is promising but remains a great challenge. Presented here is a new 2DCP, named 2D polytriethyltriindole (2DPTTI), which is efficiently synthesized by a modified interfacial Suzuki reaction from 2,7,12-tribromo-5,10,15-triethyltriindole (2-BrTTI) and 1,4-benzenediboronic acid dipinacol ester (BADE) precursors at room temperature. Wafer-scale free-standing 2DPTTI films with controllable thicknesses between 2.5 and 46.0 nm were obtained by adjusting the experimental conditions. The resulting 2DPTTI films, used as an active layer in organic field effect transistors (OFETs), exhibited typical p-type semiconducting properties and superior UV optoelectronic performance with a photosensitivity of 3.7×10³ and responsivity of 1.4×10³ A W⁻¹, as well as a light-blue fluorescence character. This report provides a general approach for constructing various semiconducting 2DCPs, by an interfacial Suzuki reaction, towards multifunctional organic electronics.     

Enhanced 1T′-Phase Stabilization and Chemical Reactivity in a MoTe2 Monolayer through Contact with a 2D Ca2N Electride

Among the widely studied 2D transition metal dichalcogenides (TMDs), MoTe₂ has attracted special interest for phase-change applications due to its small 2H-1T′ energy difference, yet a large scale phase transition without structural disruption remains a significant challenge. Recently, an interesting long-range phase engineering of MoTe₂ has been realized experimentally by Ca₂N electride. However, the interface formed between them has not been well understood, and moreover, it remains elusive how the presence of Ca₂N would affect the basal plane reactivity of MoTe₂. To address this, we performed density functional theory (DFT) calculations to investigate the potential of tuning the phase stability and chemical reactivity of a MoTe₂ monolayer via interacting with Ca₂N to form a van der Walls heterostructure. We found that the contact nature at the 2H-MoTe₂/Ca₂N interface is Schottky-barrier-free, allowing for the spontaneous electron transfer from Ca₂N to 2H-MoTe₂ to make it strongly n-type doped. Moreover, Ca₂N doping significantly lowers the energy of 1T′-MoTe₂ and dynamically triggers the 2H-to-1T′ transformation. The Ca₂N-induced phase modulation can also be applied to tune the phase energetics of MoS₂ and MoSe₂. Furthermore, using H adsorption as the testing ground, we also find that the H binding on the basal plane of MoTe₂ is enhanced after forming heterostructure with Ca₂N, potentially providing basis for surface modification and other related catalytic applications.     

Two‐Dimensional Conjugated Polymer Synthesized by Interfacial Suzuki Reaction: Towards Electronic Device Applications

Preparing two‐dimensional conjugated polymers (2DCPs) with desirable structures and semiconducting properties is promising but remains a great challenge. Presented here is a new 2DCP, named 2D polytriethyltriindole (2DPTTI), which is efficiently synthesized by a modified interfacial Suzuki reaction from 2,7,12‐tribromo‐5,10,15‐triethyltriindole (2‐BrTTI) and 1,4‐benzenediboronic acid dipinacol ester (BADE) precursors at room temperature. Wafer‐scale free‐standing 2DPTTI films with controllable thicknesses between 2.5 and 46.0 nm were obtained by adjusting the experimental conditions. The resulting 2DPTTI films, used as an active layer in organic field effect transistors (OFETs), exhibited typical p‐type semiconducting properties and superior UV optoelectronic performance with a photosensitivity of 3.7×10³ and responsivity of 1.4×10³ A W^?1, as well as a light‐blue fluorescence character. This report provides a general approach for constructing various semiconducting 2DCPs, by an interfacial Suzuki reaction, towards multifunctional organic electronics.