首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 0 毫秒
1.
The isoreticular mixed-component concept is a promising approach to tailor the material properties of metal–organic frameworks. While isoreticular mixed-metal or mixed-linker materials are commonly synthesized, the combination of both concepts for the development of isoreticular materials featuring both two metals and two linkers is still rarely investigated. Herein, we present the development of mixed-metal/mixed-linker MIL-53 materials that contain different metal combinations (Al/Sc, Al/V, Al/Cr, Al/Fe) and different linker ratios (terephthalate/2-aminoterephthalate). The possibility of changing the metal combination and the linker ratio independently from each other enables a large variety of modifications. A thorough characterization (PXRD, ATR-IR, TGA, 1H NMR, ICP-OES) confirmed that all components were incorporated into the framework structure with a statistical distribution. Nitrogen physisorption measurements showed that the breathing behavior can be tailored by adjusting the linker ratio for all metal combinations. All materials were successfully used for post-synthetic modification reactions with maleic anhydride.  相似文献   

2.
The chemical bonding, electronic structure, and optical properties of the experimentally available metal-organic framework IRMOF-14 and its metal-substituted analogues M-IRMOF-14 (M = Zn, Cd, Be, Mg, Ca, Sr, Ba), which contain a pyrene-2,7-dicarboxylate linker group, have been systematically investigated using DFT calculations. The unit cell volume and atomic positions were optimized with the Perdew-Burke-Ernzerhof (PBE) functional and showed good agreement between experimental and theoretical equilibrium structural parameters for Zn-IRMOF-14. The calculated bulk moduli indicate that the whole M-IRMOF-14 series are soft materials. The estimated band gap from DOS calculations for the M-IRMOF-14 series is ca. 2.5 eV, essentially independent of the metal ion and indicative of nonmetallic character. The band gap value is distinctly different from those calculated previously for the M-IRMOF-1 (benzene-1,4-dicarboxylate linker; ca. 3.5 eV) and M-IRMOF-10 (biphenyl-4,4'-dicarboxylate linker; ca. 3.0 eV) series and this confirms that the identity of the linker is a key parameter to control band gaps in an isoreticular series of main-group MOFs. In view of potential uses of MOFs in organic semiconducting devices such as field-effect transistors, solar cells, and organic light-emitting devices, the linear optical properties of these materials were also investigated. Comparisons are made with the M-IRMOF-1 and M-IRMOF-10 series.  相似文献   

3.
Photoelectron spectroscopy (PES) is combined with theoretical calculations to investigate the electronic and atomic structures of three doped aluminum clusters, MAl12- (M=Li, Cu, and Au). Well-resolved PES spectra have been obtained at two detachment photon energies, 266 nm (4.661 eV) and 193 nm (6.424 eV). Basin-hopping global optimization method in combination with density-functional theory calculations has been used for the structural searches. Good agreement between the measured PES spectra and theoretical simulations helps to identify the global minimum structures. It is found that LiAl12- (C(5nu)) can be viewed as replacing a surface Al atom by Li on an icosahedral Al13-, whereas Cu prefers the central site to form the encapsulated D3d-Cu@Al12-. For AuAl12- (C1), Au also prefers the central site, but severely distorts the Al12 cage due to its large size.  相似文献   

4.
用紧束缚能带计算方法(EHT)研究了标题多元合金的能带及电子结构。发现少量的多种元素在γ-TiAl中掺杂,对合金中电荷分布的影响,具有单种元素掺杂的叠加性;选择适当的合金元素就能达到多种掺杂的性能互补。多种元素掺杂能更有效地使成键电子云趋势于球形化,Peierls力均称为化,有利于增加γ-TiAl合金的塑性和变形性。  相似文献   

5.
三元过渡金属氮化物ANiN (A = Li, Na, Mg, Ca)是潜在的可充放电池的电极材料。物理性质,比如热稳定性、电子能隙以及弹性稳定性等,对于这些材料的电池应用都是非常重要的。本文使用第一原理方法,对比研究了ANiN这些材料的结构、动力学、弹性和电子结构性质。对状态方程和声子谱的计算被用来确定体系的稳定结构。对最稳定结构的弹性常数的计算表明,这些稳定结构都满足 Born-Huang的稳定性判据,意味着它们的弹性稳定性。对体系电子结构的计算表明,LiNiN和CaNiN是半金属(half-metals),MgNiN是磁性材料,而NaNiN是通常的金属。这些材料的磁学性质都通过Stoner理论进行了解释。最后,电荷密度的计算被用来很好地说明了这些材料中的Ni-N成键的特征,表明成键特点主要是离子性的,但明显地混合了共价性。  相似文献   

6.
The equilibrium structure, stability, and electronic properties of the Al(13)X (X=H,Au,Li,Na,K,Rb,Cs) clusters have been studied using a combination of photoelectron spectroscopy experiment and density functional theory. All these clusters constitute 40 electron systems with 39 electrons contributed by the 13 Al atoms and 1 electron contributed by each of the X (X=H,Au,Li,Na,K,Rb,Cs) atom. A systematic study allows us to investigate whether all electrons contributed by the X atoms are alike and whether the structure, stability, and properties of all the magic clusters are similar. Furthermore, quantitative agreement between the calculated and the measured electron affinities and vertical detachment energies enable us to identify the ground state geometries of these clusters both in neutral and anionic configurations.  相似文献   

7.
A non‐equilibrium Green’s function technique combined with density functional theory is used to study the spin‐dependent electronic band structure and transport properties of zigzag silicene nanoribbons (ZSiNRs) doped with aluminum (Al) or phosphorus (P) atoms. The presence of a single Al or P atom induces quasibound states in ZSiNRs that can be observed as new dips in the electron conductance. The Al atom acts as an acceptor whereas the P atom acts as a donor if it is placed at the center of the ribbon. This behavior is reversed if the dopant is placed on the edges. Accordingly, an acceptor–donor transition is observed in ZSiNRs upon changing the dopant’s position. Similar results are obtained if two silicon atoms are replaced by two impurities (Al or P atoms) but the conductance is generally modified due to the impurity–impurity interaction. If the doping breaks the twofold rotational symmetry about the central line, the transport becomes spin‐dependent.  相似文献   

8.
通过后合成修饰将水杨醛(Salicylaldehyde, sal)锚装在金属-有机框架化合物IRMOF-3上, 捕获不同金属离子得到系列化合物IRMOF3-Msal(M=Mg, Zn, Co, Cd, Ni, Eu, Nd, Pr, Tb); 采用红外光谱、元素分析和X射线粉末衍射对其进行表征, 并对其荧光性质进行了对比研究. 结果表明, IRMOF3-Msal的荧光峰均发生较大蓝移且IRMOF3-Mgsal的荧光强度最大.  相似文献   

9.
Based on first principle calculation using generalized gradient approximation, we report electronic properties of graphyne and its related structures (graphdiyne, graphyne-3, graphyne-4). Boron and nitrogen atoms are systematically substituted into the position of carbon atom and the corresponding changes of the properties are reported. All the structures are found to be direct band gap semiconductors with band gap depending on the concentration and position of the doping material. Our band structure calculation clearly shows that the band gap can be tuned by B–N doping and the spin-polarized calculation depicts the nonmagnetic nature of these structures. The possibility of modulating the band gap provides flexibility for its use in nanoelectronic devices. Projected density of state (PDOS) analysis shed insights on the bonding nature of these novel materials, whereas from the view point of Crystal Orbital Hamilton Population (–COHP) analysis, the nature of chemical bonding between neighbouring atoms and the orbital participating in bonding and antibonding have been explored in details.  相似文献   

10.
The microstructure, optical, photoluminescence and electrical properties of ZnO based films deposited onto FTO glass substrates by ultrasonic spray pyrolysis have been investigated. For comparison and a better understanding of physical properties of indium- and aluminum-doped ZnO and undoped ZnO thin films, X-ray diffraction analysis, photoluminescence spectra, optical, SEM texture and electrical conductivity analyses were performed. The AZO and IZO films exhibit the nanofiber structure with diameters 260 and 400 nm. X-ray diffraction showed all samples to be polycrystalline with hexagonal ZnO. The optical band gaps of the films were varied by Al and In dopants. The photoluminescence spectra of the films show a weak broad in the visible range and shifted to green emission for indium doping and to the green blue emission for aluminum as dopant. The width of the PL spectra for aluminum-doped films is too large compared to those of the indium-doped ones. The electrical conductivity of the ZnO film changes with Al and In dopants. The position of donor levels changes with In and Al dopants and approaches the conduction band level with the metal dopants. The obtained results suggest that the metal doping has a clear effect upon the growth, optical, photoluminescence and electrical conductivity properties of the ZnO films.  相似文献   

11.
The geometries, stabilities, and electronic and magnetic properties of Y(n)Al (n=1-14) clusters have been systematically investigated by using density functional theory with generalized gradient approximation. The growth pattern for different sized Y(n)Al (n=1-14) clusters is Al-substituted Y(n+1) clusters and it keeps the similar frameworks of the most stable Y(n+1) clusters except for Y(9)Al cluster. The Al atom substituted the surface atom of the Y(n+1) clusters for n<9. Starting from n=9, the Al atom completely falls into the center of the Y-frame. The Al atom substituted the center atom of the Y(n+1) clusters to form the Al-encapsulated Y(n) geometries for n>9. The calculated results manifest that doping of the Al atom contributes to strengthen the stabilities of the yttrium framework. In addition, the relative stability of Y(12)Al is the strongest among all different sized Y(n)Al clusters, which might stem from its highly symmetric geometry. Mulliken population analysis shows that the charges always transfer from Y atoms to Al atom in all different sized clusters. Doping of the Al atom decreases the average magnetic moments of most Y(n) clusters. Especially, the magnetic moment is completely quenched after doping Al in the Y(13), which is ascribed to the disappearance of the ininerant 4d electron spin exchange effect. Finally, the frontier orbitals properties of Y(n)Al are also discussed.  相似文献   

12.
We use a multilevel path integral Monte-Carlo (PIMC) method to simulate the arrangement of He atoms around a single Al atom doped in a He cluster. High-level ab initio Al-He pair potentials and a Balling and Wright pairwise Hamiltonian model are used to describe the full potential and the electronic asymmetry arising from the open-shell character of the Al atom in its ground and excited electronic states. Our calculations show that the doping of the Al 3p electron strongly influences the He packing. The results of the PIMC simulation are used to predict the electronic excitation spectrum of an Al atom embedded in He clusters. With inclusion of tail corrections for the ground and excited states potentials, the calculated 3d<--3p spectrum agrees reasonably well with the experimental spectrum. The blueshift of the calculated spectrum associated with the 4s<--3p transition of solvated Al is about 25 nm (2000 cm-1) larger than seen in experiments on Al embedded in bulk liquid He. We predict that the spectrum associated with the 4p<--3p transition will be blueshifted by approximately 7000 cm-1 (nearly 1 eV).  相似文献   

13.
丁开宁  李玉璐  章永凡 《结构化学》2014,33(10):1436-1442
The first-principles calculations were performed to investigate the stability, band structure, density of states and redox potential of Al-, Ga-, and In-doped monoclinic BiVO4(mBiVO4). The calculated formation energies show that Al-doped mBiVO4 inducing an O vacancy is energetically favorable with a smaller defect formation value. With the incorporation of Al, Ga, and In, the band gap of the doped systems will be narrowed in the order of Al-doped 〈 Ga-doped 〈 In-doped mBiVO4, which is beneficial for the response to the visible light. And the substitution of an Al or Ga for a V atom will significantly enhance the reducibility of mBiVO4, improving the efficiency of H2 evolution from H2 O. Our results show that the photocatalytic activity of mBiVO4 can be modulated by substitutional doping of Al, Ga, and In.  相似文献   

14.
Doping is a very important and effective method to be used to modulate the properties of two-dimensional (2D) materials. In this work, the electronic and magnetic properties of ultrathin tetragonal ZnSe monolayer doped by twenty different kinds of atoms neighboring Zn/Se were systemically investigated using first-principles calculations. Substitution at the Zn/Se sites was found to be easy if the monolayer was grown under Zn-/Se-poor conditions. Among non-metal dopants, only F atom is thermodynamically favored to replace Se atom, while a number of metal atoms (i.e. Ca, Sc, Ti, and Mn) are able to substitute Zn atom. It is suggested by theoretical calculations that pristine ZnSe monolayer inclines as an n-type semiconductor by certain doping. Our results open a new avenue for the modulation of the novel tetragonal ZnSe monolayer for a wealth of potential optoelectronic applications.  相似文献   

15.
The candidate structures for the ground-state geometry of the Al(7)M (M = Li, Cu, Ag, and Au) clusters are obtained within the spin-polarized density functional theory. Absorption energy, vertical ionization potential, vertical electron affinity, and the energy gap between the highest occupied molecular orbital (HOMO) level and the lowest unoccupied molecular orbital (LUMO) level have been calculated to investigate the effects of doping. Doping with Ag or Au can lead to a large HOMO-LUMO gap, low electron affinity, and increased ionization potential of Al(7) cluster. In the lowest-energy structure of the Al(7)Au cluster, the Al atom binding to the Al(6)Au acts monovalent and the other six Al atoms are trivalent. Thus, the Al(7)Au cluster has 20 valence electrons, and its enhanced stability may be due to the electronic shell closure effect.  相似文献   

16.
The electronic properties of transition‐metal‐doped zinc sulfide (ZnS) have been investigated by using first‐principles calculations. Transition‐metal doping can allow electronic transitions at energies corresponding to visible‐light wavelengths, thus potentially resulting in increased photocatalytic efficiency under sunlight. In particular, our calculations show that transition‐metal atoms that produce little lattice strain, such as Co, Ni, Mn, and Fe, can be readily incorporated in ZnS. Due to their low formation energies and appropriate band energies, we predict that Ni‐ and Co‐doped ZnS will be promising materials for photocatalytic hydrogen production.  相似文献   

17.
A review is given of the strategies used to dope inorganic solids and the consequences for properties such as ionic and electronic conductivity. Doping mechanisms involve either substitution of foreign ions onto lattice sites, creation of vacancies on either cation or anion sites, or population of normally empty interstitial sites by either anions or cations. Mechanisms for charge compensation associated with aliovalent doping are reviewed and examples are given in the fields of solid state ionics and high-temperature superconductivity. The strategies used for targeting materials with new properties are reviewed, including a surprising number of cases where startling new properties are encountered in well-known materials. Specific examples discussed include MgB2 superconductor, Na beta-alumina sodium ion conductor, Ca12Al14O33 oxide ion conductor, LiCoMnO4 lithium battery cathode, doped Li4SiO4 tunable lithium ion conductor, and La-doped BaTiO3 ferroelectric, which can be either semiconducting or insulating. Examples are also given of a curious observation that extraordinary properties are often encountered in materials that are on the edge of stability, either structurally or compositionally or at the crossover between different property types.  相似文献   

18.
Inspired by the recent discovery of the Ti-doped BN nanocages, here we report the design of novel boron nitride (BN) nanoribbons (BNNRs) doped with fourth-row transition metals (Sc−Cu) and the prediction of their structural and electromagnetic properties. First-principles calculations and ab initio molecular dynamics simulations show that Ti-doped BNNR possesses both thermodynamic and kinetic stability at high temperatures for synthesis of BN materials. Metal doping may make the nonmagnetic pristine BNNR ferromagnetic or antiferromagnetic, depending on the metal. The doping with all considered metals reduces substantially the band gap of pristine BNNR. For example, Sc-doped BNNR is ferromagnetic with an indirect band gap of 1.18 eV, while V-doped nanoribbon is antiferromagnetic with a direct gap of 2.50 eV. Remarkably, the carrier mobility in both materials is significantly enhanced compared to the pristine BNNR. Our findings suggest that doping with different metals may endow BNNRs with versatile electronic and magnetic properties.  相似文献   

19.
Transition-metal-based phosphides (TMPs) have been considered as attractive electrocatalysts for water splitting due to their earth-abundance and remarkable catalytic activity. As a representative type of precursors, metal-organic frameworks (MOFs) provide ideal plateaus for the design of nanostructured TMPs. In this work, the hierarchically structured iron phosphide nanobundles (FeP-500) were fabricated by one-step phosphorization of an iron-based MOF (MET(Fe)) precursor. The derived FeP-500 nanobundles were constructed by quasi-paralleled one-dimensional nanorods with uneven surface, which provided channels for electrolyte penetration, mass transport, and effective exposure of active sites during the water-splitting process. With the addition of conductive Super P, the obtained FeP-500-S exhibited a good electrocatalytic performance towards the hydrogen evolution reaction in alkaline electrolyte (1 mol L−1 KOH). Furthermore, to investigate the influence of secondary metal doping, a series of isoreticular MOF precursors and bimetallic TMPs were fabricated. The results indicated that the catalytic performance is structure dominated.  相似文献   

20.
We have performed a comparative study of the electronic properties of six different electron-doped metal-phthalocyanine (MPc) compounds (ZnPc, CuPc, NiPc, CoPc, FePc, and MnPc), in which the electron density is controlled by means of potassium intercalation. Despite the complexity of these systems, we find that the nature of the underlying molecular orbitals produces observable effects in the doping dependence of the electrical conductivity of the materials. For all the MPc's in which the added electrons are expected to occupy orbitals centered on the ligands (ZnPc, CuPc, and NiPc), the doping dependence of the conductivity has an essentially identical shape. This shape is different from that observed in MPc materials in which electrons are also added to orbitals centered on the metal atom (CoPc, FePc, and MnPc). The observed relation between the macroscopic electronic properties of the MPc compounds and the properties of the molecular orbitals of the constituent molecules clearly indicates the richness of the alkali-doped metal-phthalocyanines as a model class of compounds for the investigation of the electronic properties of molecular systems.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号