Structural, magnetic, and thermal characteristics of the phase transitions in Gd5GaxGe4−x magnetocaloric materials

Temperature-dependent, single crystal and powder X-ray diffraction studies as well as magnetization, and heat capacity measurements were carried out on two phases of the Gd₅Ga_xGe_4−x system: for x=0.7 and 1.0. Gd₅Ga_0.7Ge_3.3 shows three structure types as a function of temperature: (i) from 165 K to room temperature, the orthorhombic Sm₅Ge₄-type structure exists; (ii) below 150 K, it transforms to a orthorhombic Gd₅Si₄-type structure; and (iii) a monoclinic Gd₅Si₂Ge₂-type component is observed for the intermediate temperature range of 150 K≤T≤165 K. This is the first time that all these three structure types have been observed for the same composition. For Gd₅Ga_1.0Ge_3.0, the room temperature phase belongs to the orthorhombic Pu₅Rh₄-type structure with interslab contacts between main group atoms of 2.837(4) Å. Upon heating above 523 K, it transforms to a Gd₅Si₄-type structure with this distance decreasing to 2.521(7) Å before decomposing above 573 K.     

On the distribution of tetrelide atoms (Si, Ge) in Gd5(SixGe1−x)4

A crystallographic study of the Si/Ge site preferences in the Si-rich regime of Gd₅(Si_xGe_1−x)₄ and a crystal chemical analysis of these site preferences for the entire range is presented. The room temperature crystal structure of Gd₅Si₄ as well as four pseudobinary phases, Gd₅(Si_xGe_1−x)₄ for x?0.6, is reported. All structures are orthorhombic (space group Pnma), Gd₅Si₄-type and show decreasing volume as the Si concentration increases. Refinements of the site occupancies for the three crystallographic sites for Si/Ge atoms in the asymmetric unit reveal a nonrandom, but still incompletely ordered arrangement of Si and Ge atoms. The distribution of Si and Ge atoms at each site impacts the fractions of possible homonuclear and heteronuclear Si-Si, Si-Ge and Ge-Ge dimers in the various structures. This distribution correlates with the observed room temperature crystal structures for the entire series of Gd₅(Si_xGe_1−x)₄.     

Gd5Ni0.96Sb2.04 and Gd5Ni0.71Bi2.29: Crystal structure, magnetic properties and magnetocaloric effect. Structural transformation and magnetic properties of hexagonal Gd5Bi3

Nickel was successfully introduced into the Gd₅Sb₃ and Gd₅Bi₃ binaries to yield the Gd₅Ni_0.96(1)Sb_2.04(1) and Gd₅Ni_0.71(1)Bi_2.29(1) phases. Both Ni-substituted compounds adopt the orthorhombic Yb₅Sb₃-type structure. While the Gd₅Ni_0.71Bi_2.29 phase is thermodynamically stable at 800 °C and decomposes at lower temperatures upon annealing, it can be easily quenched to room temperature by rapid cooling from 800 °C. The Gd₅Ni_0.96Sb_2.04 phase is found to be thermodynamically stable till room temperature. Through annealing at different temperatures, Gd₅Bi₃ was proven to undergo the Mn₅Si₃-type (LT)↔Yb₅Sb₃-type (HT) transformation reversibly, whereas Gd₅Sb₃ was found to adopt only the hexagonal Mn₅Si₃-type structure. Orthorhombic Gd₅Ni_0.96Sb_2.04 and Gd₅Ni_0.71Bi_2.29 and low-temperature hexagonal Gd₅Bi₃ order ferromagnetically at 115, 162 and 112 K, respectively. In Gd₅Bi₃, the ferromagnetic ordering is followed by spin reorientation below 64 K. Magnetocaloric effect in terms of ΔS was evaluated from the magnetization data and found to reach the maximum values of −7.7 J/kgK for Gd₅Ni_0.96Sb_2.04 and −5.6 J/kgK for Gd₅Ni_0.71Bi_2.29 around their Curie temperatures.     

The new ternary silicide Gd5CoSi2: Structural, magnetic and magnetocaloric properties

Gd₅CoSi₂ was prepared by annealing at 1003 K. Its investigation by the X-ray powder diffraction shows that the ternary silicide crystallizes in a tetragonal structure deriving from the Cr₅B₃-type (I4/mcm space group; a=7.5799(4) and c=13.5091(12) Å as unit cell parameters). The Rietveld refinement shows a mixed occupancy on the (8h) site between Si and Co atoms. Magnetization and specific heat measurements performed on Gd₅CoSi₂ reveal a ferromagnetic behaviour below T_C=168 K. This magnetic ordering is associated to an interesting magnetocaloric effect; the adiabatic temperature change ΔT_ad is about 3.1 and 5.9 K, respectively, for a magnetic field change of 2 and 4.6 T.     

Structure–composition sensitivity in “Metallic” Zintl phases: A study of Eu(Ga1−xTtx)2 (Tt=Si, Ge, 0≤x≤1)

Two isoelectronic series, Eu(Ga_1−xTt_x)₂ (Tt=Si, Ge, 0≤x≤1), have been synthesized and characterized by powder and single-crystal X-ray diffraction, physical property measurements, and electronic structure calculations. In Eu(Ga_1−xSi_x)₂, crystal structures vary from the KHg₂-type to the AlB₂-type, and, finally, the ThSi₂-type structure as x increases. The hexagonal AlB₂-type structure is identified for compositions 0.18(2)≤x<0.70(2) with Ga and Si atoms statistically distributed in the polyanionic 6³ nets. As smaller Si atoms replace Ga atoms while the number of valence electrons increases, the lattice parameters, unit cell volumes, and Ga–Si distances in this phase region decrease significantly. Although aspects of X-ray diffraction results suggest puckering of the 6³ nets for the Si-richest example of the AlB₂-type Eu(Ga_1−xSi_x)₂, the complete experimental evidence remains inconclusive. On the other hand, in Eu(Ga_1−xGe_x)₂, six different structural types were observed as x varies. In addition to EuGa₂ (KHg₂-type; space group Imma) and EuGe₂ (own structure type, space group P3¯m1), the ternary phases studied show four different structures: the AlB₂-type for Ga-rich compositions; the YPtAs-type structure for EuGaGe; and two new structures, which are intergrowths of the YPtAs-type EuGaGe and EuGe₂, for Ge-rich compositions. These two Ge-rich phases include: (1) Eu(Ga_0.45(2)Ge_0.55(2))₂ containing two YPtAs-type motifs of EuGaGe plus one EuGe₂ motif; and (2) Eu(Ga_0.40(2)Ge_0.60(2))₂ containing one YPtAs-type motif alternating with a split site at and z=0.4798(2) with ca. 50% site occupancy by Ga and Ge along the c-axis. Magnetic susceptibilities of three Eu(Ga_1−xGe_x)₂ compounds display Curie–Weiss behavior above ca. 100 K, and show effective magnetic moments indicative of divalent Eu with a 4f⁷ electronic configuration, consistent with. X-ray absorption spectra (XAS). Density of states (DOS) and crystal orbital Hamilton population (COHP) analyses, based on first principles electronic structure calculations, rationalize the observed homogeneity ranges of the AlB₂-type phases in both systems and the structural variations as a function of Tt content.     

Structural variations and hydrogen storage properties of Ca5Si3 with Cr5B3-type structure

The structure and phase variation of Ca₅Si₃ upon hydrogenation were systematically investigated using combined neutron powder diffraction (NPD), neutron vibrational spectroscopy (NVS), and first-principles calculations. The hydrogen absorption equilibrium was first attained with formation of Ca₅Si₃H(D)_0.53 (I4/mcm) with H exclusively located in Ca₄-tetrahedral sites. More hydrogen absorbed into the system under higher pressure leads to dissociations into CaH₂ (an amorphous hydride at higher pressures) and CaSi. The hydrogen-induced formation of an amorphous phase under higher pressures is very unusual in Cr₅B₃-type compounds and the observed formation of CaH₂ upon hydrogen absorption confirmed the proposed composition equilibrium between A₅Tt₃ (A = Ca, Sr; Tt = Si, Ge, Sn) and AH₂.     

Dy5Ni0.66Bi2.34 and Lu5Ni0.56Sb2.44 – Substitution derivatives with the orthorhombic Yb5Sb3-type structure. Magnetocaloric effect of Dy5Ni0.66Bi2.34

Dy₅Ni_0.66Bi_2.34 and Lu₅Ni_0.56Sb_2.44 were synthesized by arc-melting and were found to adopt an orthorhombic Yb₅Sb₃-type structure. Cell parameters are a = 12.075(2), b = 9.165(2), c = 8.072(1) Å for Dy₅Ni_0.66Bi_2.34 and a = 11.6187(9), b = 8.933(1) and c = 7.8377(6) Å for Lu₅Ni_0.56Sb_2.44. Dy₅Ni_0.66Bi_2.34 undergoes a step-like ferromagnetic transition around 66 K. Magnetocaloric effect in terms of the magnetic entropy change, ΔS, reaches −3.73 J/kg K at 75 K for Dy₅Ni_0.66Bi_2.34.     

Syntheses and Crystal Structure of the Ternary Silicides RE2Si2Mg (RE = Y, La–Nd, Sm, Gd–Lu) and Structure Refinement of Dy5Si3

The rare earth metal–magnesium–silicides RE₂Si₂Mg (RE = Y, La–Nd, Sm, Gd–Lu) were prepared by induction melting of the elements in sealed tantalum tubes in a water-cooled sample chamber of a high-frequency furnace. The silicides were investigated via X-ray powder diffraction. The structures of Sm₂Si₂Mg and Dy₂Si₂Mg were refined from X-ray single crystal diffractometer data: Mo₂FeB₂ type, P4/mbm, a = 727.86(7), c = 428.16(6) pm, wR2 = 0.0194, 206 F² values, 13 variable parameters for Sm₂Si₂Mg and a = 713.85(7), c = 419.07(6) pm, wR2 = 0.0331, 286 F² values, 12 variable parameters for Dy₂Si₂Mg. The samarium compound shows a small homogeneity range Sm_2+xSi₂Mg_1−x. The investigated single crystal had the refined composition Sm_2.022(3)Si₂Mg_0.978(3). The RE₂Si₂Mg silicides are 1:1 intergrowth structures of CsCl and AlB₂ related slabs of compositions REMg and RESi₂. Crystals of the binary silicide Dy₅Si₃ were obtained as side product. The structure was refined from X-ray single crystal data: Mn₅Si₃ type, P6₃/mcm, a = 841.0(2), c = 631.3(1) pm, wR2 = 0.0661, 269 F² values, 12 variable parameters.     

New Compounds of the ThCr2Si2-Type and the Electronic Structure of CaM2Ge2 (M: Mn-Zn)

Two new compounds were synthesized by heating mixtures of the elements at 975-1025 K and characterized by single-crystal X-ray methods. CaZn₂Si₂ (a=4.173(2) Å, c=10.576(5) Å) and EuZn₂Ge₂ (a=4.348(2) Å, c=10.589(9) Å) crystallize in the ThCr₂Si₂-type structure (space group I4/mmm; Z=2). Magnetic susceptibility measurements of EuZn₂Ge₂ show Curie-Weiss behavior with a magnetic moment of 7.85(5)μ_B/Eu and a paramagnetic Curie temperature of 10(1) K. EuZn₂Ge₂ orders antiferromagnetically at T_N=10.0(5) K and undergoes a metamagnetic transition at a low critical field of about 0.3(2) T. The saturation magnetization at 2 K and 5.5 T is 6.60(5) μ_B/Eu. ¹⁵¹Eu Mössbauer spectroscopic experiments show one signal at 78 K at an isomer shift of −11.4(1) mm/s and a line width of 2.7(1) mm/s compatible with divalent europium. At 4.2 K full magnetic hyperfine field splitting with a field of 26.4(4) T is detected. The already known compounds CaM₂Ge₂ (M: Mn-Zn) also crystallize in the ThCr₂Si₂-type structure. Their MGe₄ tetrahedra are strongly distorted with M=Ni and nearly undistorted with M=Mn or Zn. According to LMTO electronic band structure calculations, the distortion is driven by a charge transfer from M-Ge antibonding to bonding levels.     

Syntheses and Crystal Structure of the Ternary Silicides RE2Si2Mg (RE = Y, La–Nd, Sm, Gd–Lu) and Structure Refinement of Dy5Si3

Summary. The rare earth metal–magnesium–silicides RE₂Si₂Mg (RE = Y, La–Nd, Sm, Gd–Lu) were prepared by induction melting of the elements in sealed tantalum tubes in a water-cooled sample chamber of a high-frequency furnace. The silicides were investigated via X-ray powder diffraction. The structures of Sm₂Si₂Mg and Dy₂Si₂Mg were refined from X-ray single crystal diffractometer data: Mo₂FeB₂ type, P4/mbm, a = 727.86(7), c = 428.16(6) pm, wR2 = 0.0194, 206 F² values, 13 variable parameters for Sm₂Si₂Mg and a = 713.85(7), c = 419.07(6) pm, wR2 = 0.0331, 286 F² values, 12 variable parameters for Dy₂Si₂Mg. The samarium compound shows a small homogeneity range Sm_2+xSi₂Mg_1−x. The investigated single crystal had the refined composition Sm_2.022(3)Si₂Mg_0.978(3). The RE₂Si₂Mg silicides are 1:1 intergrowth structures of CsCl and AlB₂ related slabs of compositions REMg and RESi₂. Crystals of the binary silicide Dy₅Si₃ were obtained as side product. The structure was refined from X-ray single crystal data: Mn₅Si₃ type, P6₃/mcm, a = 841.0(2), c = 631.3(1) pm, wR2 = 0.0661, 269 F² values, 12 variable parameters.     

Structur–Composition Relations and Fractional Site Occupancy of New M5Ge4 Compounds in the System Ge–Ta–Zr

The new ternary phases Zr_4−xTa_1+xGe₄ (0.1<x<0.4) and Zr_2+xTa_3−xGe₄ (0.1<x<1.1) were prepared from the elements by arc melting and subsequent induction heating at 1400–1450°C. Single-crystal X-ray diffraction was used to determine their structures and to refine mixed site occupancies. Zr_4−xTa_1+xGe₄ was found to crystallize in the monoclinic space group P2₁/c (structure type: U₂Mo₃Si₄) and the compound Zr_2−xTa_3−xGe₄ shows orthorhombic symmetry (space group Pnma, structure type: Sm₅Ge₄). The close structural relationship between the two structures is discussed. Both phases exhibit pronounced differential fractional site occupancy of Ta and Zr on the metal sites and considerable composition ranges. Extended Hückel calculations were performed for various site occupancy models and Mulliken overlap populations for the different lattice sites of each structure were calculated for these models. The correlation of the cumulated Mulliken overlap populations and the atomic orbital populations with the actual site occupancies is discussed.     

EuZn2Si2 and EuZn2Ge2 Grown from Zn or Ga(ln)/Zn Flux

Single crystals of the novel ternary compounds EuZn₂Si₂ and EuZn₂Ge₂ were grown from pure gallium, indium, or zinc metal used as a flux solvent. Crystal properties were characterized using X-ray single-crystal analyses via Gandolfi and Weissenberg film techniques and by four-circle X-ray single-crystal diffractometry. The new compounds crystallize with ternary derivative structures of BaAl₄, i.e., EuZn₂Si₂ with ThCr₂Si₂-type (a=0.42607(2) nm, c=1.03956(5) nm, I4/mmm, R₁=0.038) and EuZn₂Ge₂ with CaBe₂Ge₂-type (a=0.43095(2) nm, c=1.07926(6) nm, P4/nmm, R₁=0.067). XAS and magnetic measurements on EuZn₂Si₂ and EuZn₂Ge₂ revealed in both compounds the presence of Eu²⁺ ions carrying large magnetic moments, which order magnetically at low temperatures. The magnetic phase transition occurs at T_N=16 and 7.5 K for the silicide and the germanide, respectively. In EuZn₂Si₂ there occurs a spin reorientation at 13 K and furthermore some canting of antiferromagnetically ordered moments below about 10 K. In EuZn₂Ge₂ a canted antiferromagnetic structure is formed just at T_N.     

Preparation and characterization of lithium ion-conducting glass-ceramics in the Li1 + xCrxGe2 − x(PO4)3 system

Li₂O–Cr₂O₃–GeO₂–P₂O₅ based glasses were synthesized by a conventional melt-quenching method and successfully converted into glass-ceramics through heat treatment. Experimental results of DTA, XRD, ac impedance techniques and FESEM indicated that Li_1.4Cr_0.4Ge_1.6(PO₄)₃ glass-ceramics treated at 900 °C for 12 h in the Li_1 + xCr_xGe_2 − x(PO₄)₃ (x = 0–0.8) system exhibited the best glass stability against crystallization and the highest ambient conductivity value of 6.81 × 10⁻⁴ S/cm with an activation energy as low as 26.9 kJ/mol. In addition, the Li_1.4Cr_0.4Ge_1.6(PO₄)₃ glass-ceramics displayed good chemical stability against lithium metal at room temperature. The good thermal and chemical stability, excellent conducting property, easy preparation and low cost make it promising to be used as solid-state electrolytes for all-solid-state lithium batteries.     

Mn5Si3-type host-interstitial boron rare-earth metal silicide compounds RE5Si3: Crystal structures, physical properties and theoretical considerations

A series of binary rare-earth metal silicides RE₅Si₃ and ternary boron-interstitial phases RE₅Si₃B_x (RE=Gd, Dy, Ho, Lu, and Y) adopting the Mn₅Si₃-type structure, have been prepared from the elemental components by arc melting. Boron “stuffed” phases were subsequently heated at 1750 K within a high-frequency furnace. Crystal structures were determined for both binary and ternary series of compounds from single-crystal X-ray data: hexagonal symmetry, space group P6₃/mcm, Z=2. Boron insertion in the host binary silicides results in a very small decrease of the unit cell parameters with respect to those of the binaries. According to X-ray data, partial or nearly full boron occupancy of the interstitial octahedral sites in the range 0.6-1 is found. The magnetic properties of these compounds were characterized by the onset of magnetic ordering below 100 K. Boron insertion induces a modification of the transition temperature and θ_p values in most of the antiferromagnetic binary silicides, with the exception of the ternary phase Er₅Si₃B_x which was found to undergo a ferromagnetic transition at 14 K. The electrical resistivities for all binary silicides and ternary boron-interstitial phases resemble the temperature dependence of metals, with characteristic changes of slope in the resistivity curves due to the reduced electron scattering in the magnetically ordered states. Zintl-Klemm concept would predict a limiting composition RE₅Si₃B_0.6 for a valence compound and should then preclude the stoichiometric formula RE₅Si₃B. Density functional theory calculations carried out on some RE₅Si₃Z_x systems for different interstitial heteroatoms Z and different x contents from 0 to 1 give some support to this statement.     

Structure ofA2Ge4O9-Type Sodium Tetragermanate (Na2Ge4O9) and Comparison with Other Alkali Germanate and Silicate Mixed Tetrahedral–Octahedral Framework Structures

Long-standing uncertainty on the structure type of Na₂Ge₄O₉has been resolved. Sodium tetragermanate has been grown by crystallization from a supercooled melt and its single-crystal X-ray structure has been determined (R=0.022). Sodium tetragermanate is trigonal witha=11.3234(12),c=9.6817(9) Å, space groupP c1,Z=6, andD_x=4.451 g cm⁻³. The structure is comprised of a mixed tetrahedral–octahedral framework with three-membered [Ge₃O₉] rings of GeO₄tetrahedra interconnected by isolated GeO₆octahedra via shared corners and isA₂Ge₄O₉-type. Bond distances and angles for GeO₄tetrahedra and GeO₆octahedra are very similar to the corresponding values in the type structure of K₂Ge₄O₉, the two structures differing mainly in the accommodation of the smaller (medium–large-sized) Na cation, which is now in a 5+2 coordination. The structure–composition relationships of wadeite-type,A₂Ge₄O₉-type, and Na₂Si₄O₉-type structures of germanates and silicates depend largely on theT–O distance and the size of the monovalent cation. We confirm that sodium tetragermanate is a metastable phase at all pressures up to 2 kbar, the stable assemblage for the Na₂Ge₄O₉composition being sodium enneagermanate (Na₄Ge₉O₂₀) plus a more sodic phase.     

New Layered Materials in the K–In–Ge–As System: K8In8Ge5As17and K5In5Ge5As14

Exploratory synthesis in the K–In–Ge–As system has yielded the unusual layered compounds K₈In₈Ge₅As₁₇(1) and K₅In₅Ge₅As₁₄(2), both of which contain In–Ge–As layers with interleaved potassium ions, Ge–Ge bonds, InAs₄tetrahedra, As–As bonds, and rows of Ge₂As₆dimers. Compound 1 has As₃groups, while compound 2 has infinite As ribbons on both faces of each layer. Unlike compound 1, compound 2 has substitutional defects where indium partially occupies each of the three independent germanium sites in the ratio of 1:5 for In:Ge. This partial occupancy makes 2 an electron-precise compound. The Ge(In)–Ge(In) bond of 2 is longer than the Ge–Ge bond of 1, and this bond lengthening effect was confirmed by performing DFT-MO calculations on the model compounds H₃Ge–GeH₃and H₃Ge–InH⁻₃. Possible implications of electron imprecise formulas determined by X-ray crystal structure determinations are discussed. Compound 1: space groupP2₁/cwitha=18.394 (8) Å,b=19.087 (7) Å,c=25.360 (3) Å,β=105.71 (2)°,V=8571 (4) ų, andD_calcd=4.45g/cm³forZ=4. Refinement on 4455 reflections yieldedR(R_w)=6.8%(7.8%). Compound 2: space groupC2/mwitha=40.00 (1) Å,b=3.925 (2) Å,c=10.299 (3),β=99.97 (2)°,V=1592 (1) ų, andD_calcd= 4.55g/cm³forZ=8. Refinement on 1206 reflections yieldedR(R_w)=5.6% (5.7%).     

Magnetic structure of the UCuxSi2−x system

Neutron powder diffraction experiments were performed on selected compositions of the UCu_xSi_2−x system exhibiting an interesting magnetic phase diagram towards the composition: spin fluctuation behaviour for x<0.49, ferromagnetism for 0.49≤x<0.80, spin glass state for 0.80<x<0.92 and finally antiferromagnetism for 0.92<x≤0.96. At 1.5 K, the compounds UCu_0.49Si_1.51 (hexagonal AlB₂ modification) and UCu_0.65Si_1.35 show a collinear ferromagnetic structure where the uranium magnetic moments equal to 1.1(1) and 2.5(1)μ_B, respectively, are aligned in the basal plane of the [U₆] trigonal prisms. On the contrary, UCu_0.96Si_1.04 adopts a non-collinear antiferromagnetic structure similar to that observed for UCuSn. Moreover, the study confirms the absence of long range magnetic order for UCu_0.90Si_1.10.     

The luminescence of Pr3+ in BaY4Si5O17

The cell constants of four new monoclinic compounds BaR₄X₅O₁₇ (R = Y, Gd; X = Si, Ge) are given. The luminescence of various RE activators in the silicates is reported. Pr³⁺-activated BaY₄Si₅O₁₇ shows efficient ultraviolet 5d → 4f emission and weak 4f → 4f emission (mainly red luminescence from the ¹D₂ level). The 5d → 4f emission is ascribed to Pr³⁺ on Y sites, the 4f → 4f emission to Pr³⁺ on Ba sites. Energy transfer from Pr³⁺ to Gd³⁺ has been observed. Gd³⁺ plays an intermediate role in the energy transfer from Pr³⁺ to Sm³⁺ and to Dy³⁺ in BaGd₄Si₅O₁₇. Upon activation with Tb³⁺ the silicates show characteristic green Tb³⁺ luminescence with a quantum efficiency of 75% for ultraviolet excitation.     

Ternary silicides M2Cr4Si5 (M=Ti, Zr, Hf): filled variants of the Ta4SiTe4 structure type

The isostructural ternary silicides M₂Cr₄Si₅ (M=Ti, Zr, Hf) were prepared by arc-melting of the elemental components. The single-crystal structure of Zr₂Cr₄Si₅ was determined by X-ray diffraction (Pearson symbol oI44, orthorhombic, space group Ibam, Z=4, a=7.6354(12) Å, b=16.125(3) Å, c=5.0008(8) Å). Zr₂Cr₄Si₅ adopts the Nb₂Cr₄Si₅-type structure, an ordered variant of the V₆Si₅-type structure. It consists of square antiprisms that have Zr and Cr atoms at the corners and Si atoms at the centers; they share opposite faces to form one-dimensional chains _∞¹[Zr_4/2Cr_4/2Si] surrounded by additional Si atoms and extending along the c direction. In a new interpretation of the structure, additional Cr atoms occupy interstitial octahedral sites between these chains, clarifying the relation between this structure and that of Ta₄SiTe₄. The formation of short Si-Si bonds in Zr₂Cr₄Si₅ is contrasted with the absence of Te-Te bonds in Ta₄SiTe₄. The compounds M₂Cr₄Si₅ (M=Ti, Zr, Hf) exhibit metallic behavior and essentially temperature-independent paramagnetism. Bonding interactions were analyzed by band structure calculations, which confirm the importance of Si-Si bonding in these metal-rich compounds.