极化电极均匀化设计调控铌酸锂周期极化占空比

准相位匹配(QPM)理论上能够充分利用晶体的非线性光学系数、无走离效应,在光学频率转换中具有非常大的优势。铌酸锂晶体(LiNbO₃, LN)具有高非线性光学系数、宽通光范围和低生长成本,因此基于铌酸锂铁电畴结构设计获得的周期极化铌酸锂晶体(PPLN)成为准相位匹配技术的理想选择。目前制备PPLN晶体最常用的方法是外加电场极化法,制备过程中,电极结构的参数对极化过程至关重要。本研究基于实时监测下的电场极化过程,结合有限元分析,对不同电极结构的空间电场分布进行分析,发现电极边缘出现电场极大值,而电极内部的电场分布相对均匀。基于这一现象,本文提出了一种多通道电极结构的设计方案,以实现极化空间内部电场的均匀分布。本研究采用十通道电极进行极化实验,通过表征每个通道的占空比,发现内部八个通道的占空比大小均匀且在50%±5%范围,通过晶体的倍频实验验证发现十通道周期极化样品中中间通道相对边缘通道的非线性转换效率明显提升并分布均匀,证明其中间通道具有占空比可控的均匀极化结构,为极化空间电场均匀化设计提供了一种高效合理的设计方案。     

基于周期性极化铌酸锂的波长可调谐光参量振荡器

本文报导了基于周期性极化铌酸锂(PPLN)波长调谐准相位匹配(QPM)的光学参量振荡器, 该光学振荡器是由一个声光Q开关连续二极管泵浦的Nd:VO4激光器所泵浦.采用温度、角度和周期调谐就能获得宽的波长调谐输出.论文对这几种调谐方式进行了分析比较,这对于实现宽波长、快速、连续调谐相干光源是有益的.     

KDP(KD*P)晶体结构研究进展

本文回顾了70多年来人们对KDP(KD*P)晶体结构的研究成果,尤其对近年来在晶体表面界面结构、氢键结构等方面所取得的重大突破进行了综述,并力图强调晶体性能对结构的依赖关系.KDP晶体的表面及界面结构对于晶体的生长及缺陷的形成具有重要影响.表面X射线衍射研究结果表明:水溶液中的KDP晶体表面上有四层特殊结构的水分子层,前两层水分子象冰层一样牢固地结合在晶体表面上,后两层相对弥散.     

PT含量对压电单晶声子晶体SH波传输特性的影响

采用全局矩阵方法研究了水平剪切波(SH)在含[001].方向极化的PMN-xPT单晶/聚合物声子晶体复合材料中的传输特性.研究结果表明,PT含量对极化前声子晶体中SH波传输透射谱的影响较大;而极化后,SH波透过谱因PT含量不同导致第一禁带宽度最大相差10;,远小于极化方向对带隙的影响.因此制备PMN-xPT单晶/聚合物声子晶体,应主要从材料的极化方向和性能稳定两个维度选用单晶材料.     

电磁波在含各向异性材料和磁光材料一维光子晶体中的传输

为研究在含各向异性材料和磁光材料一维光子晶体电磁波传输极化态的变化,把磁光材料作为缺陷层,设计一维光子晶体。利用4×4传输矩阵算法,计算该结构的传输谱。发现在特定的共振波长,输入线性极化电磁波同样输出线性极化电磁波,但输出极化的方向与输入极化方向不同。输出极化的方向决定于输入极化方向,既可以随输入极化同方向变化,也可以反方向变化。研究结果为实现光控制光提供了新的手段。     

(Nd3+,Yb3+):Ca3(VO4)2晶体的极化研究

本文回顾了(Nd3+,Yb3+):Ca3(VO4)2晶体的研究历程,通过对晶体结构和对晶体激光性能研究年代的对比,认为高的泵浦阈值是由于晶体中存在的对泵浦光和激光散射很强的畴壁结构未被发现而造成的.讨论了极化的原理、建立了极化装置,采用Laue定向法和X射线定向仪定向法结合解决了(Nd3+,Yb3+):Ca3(VO4)2这种大晶格常数(c＝3.8029nm)晶体的定向问题.把晶体的抛光面放入0.5mol;的温度为30℃的硼酸中腐蚀样品1h,用显微镜可以观察到畴结构.在～1100℃和电流密度为～10μA/mm2的条件下极化2h即可完成极化.变黑的极化样品可以通过把晶体放入马福炉中升温至850℃,保持1h,然后降至室温即可消除.     

晶体物理性质的空间轴转动对称性

用群论方法导出具有SO(2)群对称性的一般三阶、四阶张量形式;进而给出具有这种对称性的压电、线性电光、二阶非线性极化、弹光、二次电光、电致伸缩、弹性及三阶非线性极化系数矩阵的一般形式.指出含有4度或6度转轴的非中心对称晶类的压电、线性电光及二阶非线性极化性质,以及所有六方晶类的弹光、二次电光、电致伸缩、弹性及三阶非线性极化性质具有关于晶体中唯一高次轴的任意旋转对称性.对所得结果作了讨论.     

基于偶极子点光源模型光子晶体LED出光效率的研究

利用三维时域有限差分法(FDTD)对光子晶体LED出光效率的影响因素进行分析,比较了电偶极子和磁偶极子点光源模型对LED出光效率的影响,研究不同极化角偶极子点光源下光子晶体LED中的出光效率。数值计算结果表明:极化角越小,偶极子点光源在LED出光效率增强因子越大,磁偶极子点光源模型与电偶极子点光源模型相比,极化角对出光效率增强因子的影响明显减小。基于磁偶极子点光源模型,考虑极化角的影响优化设计一种空气孔三角晶格光子晶体LED结构,其出光效率增强因子高达4.5。     

铌酸钾锂晶体的生长与极化的研究

采用不同成分配比,以Czochralski法生长铌酸钾锂(KLN)晶体,研究生长工艺和成分配比对KLN晶体性能的影响.选用的轴向温度梯度为28～35℃/cm,晶体的旋转速度为5～10r/min;晶体的生长速度与KLN的生长原料的成分有关.采用场冷法对KLN晶体进行极化处理.极化电流密度为2mA/cm3,极化温度为460～340℃.生长出透明的没有裂纹的KLN晶体.     

介电超晶格结构极化设备的研究

针对介电超晶格结构的特殊极化问题,自行研制了极化设备.研究了Windows操作系统下实现高频精确定时的高性能定时器法.基于此方法实现了极化设备的任意波形发生器及信号采集功能.研制开发了高精度0～10 kV稳压电源,产生满足要求的极化电压.利用这种设备完成了化学计量比钽酸锂晶体的极化实验.结果表明设备运行稳定可靠,性能良好.     

Polarization mechanism of LiNbO3 crystal due to thermoelectric power and current-induced electric fields during growth via micro-pulling-down method

The mechanism of polarization due to thermoelectric power and current-induced electric fields during the growth of LiNbO₃ crystals was studied using a micro-pulling-down method. With no applied electric current, a +c single-domain crystal was grown regardless of the domain orientation of the seed crystal. This +c domain growth was consistent with the direction of the electric field caused by the thermoelectric power in the liquid, despite an opposing electric field in the solid due to the opposite sign of the Seebeck coefficient. Thus, it was the electric field in the liquid that determined the domain structure of the growing crystal. On the other hand, when a current was applied from the melt to the crystal, a −c domain crystal was grown. The electric current required for this domain inversion to occur became larger as the temperature gradient in the solid phase decreased. This shows that the electric field in the solid phase became large enough to induce domain inversion from +c to −c through a combination of the thermoelectric power in the solid phase and current-induced electric field.     

光在介电常数正弦调制的一维光子晶体中的传输

本文用平面波展开法和时域有限差分法研究了光在介电常数受正弦函数调制的一维光子晶体传输规律,发现该光子晶体同样具有一般光子晶体的带隙结构.带隙宽度随调制深度的增加而增加,随周期长度的增加而减小.还用时域有限差分法计算得到源频率分别在禁带和通带时电场在介质中的分布,禁带情况下电场在介质中受到抑制,通带情况下不受抑制.说明不论介质的介电常数如何分布,只要满足周期性的条件,介质都会具有一般光子晶体共有的本质特征.     

Calculation of local electric fields in displacive-type ferroelectrics: LiNbO3

The method is suggested for calculating the intensity and potential of a local electric field in displacive-type ferroelectrics which is based on the introduction of a transitional zone between the region of the discrete localization of ions and the homogeneously polarized medium. The method is exemplified on the calculation of the contribution of Li⁺ ions to the local electric field in the lithium niobate structure. It is shown that the method provides fast convergence of the results in the calculation of the field intensity and high relative accuracy of the calculated electric-field potential inside the crystal. The contribution of the induced dipoles to the local electric field is calculated, and it is shown that the stability of the LiNbO₃ structure is provided by considerable anisotropy in the polarizability of Nb-O bonds. The method is applicable to any ionic crystal.     

Dynamic Layer Response under Electric Field in Antiferroelectric Liquid Crystal Cells Measured by Synchrotron Microbeam Time Resolved X-Ray Diffraction

Abstract

Direct observation of the local layer response of an antiferroelectric liquid crystal to the step form electric field has been carried out by a time resolved synchrotron X-ray micro diffraction measurement. When an electric field was changed from high voltage to OV, corresponding to the ferroelectric to antiferroelectric phase transition, the local layer transformed from the bookshelf to the quasi-bookshelf structure within 0.3 ms. The horizontal chevron structure was found in both the phases, though the decrease in the horizontal chevron angle was observed during a period of 0.2 ms after turning off the electric field. In the antiferroelectric to ferroelectric phase transition process (from OV to high voltage), the layer structure transformed to the bookshelf within 0.04 ms.     

名义纯及掺杂铌酸锂晶体内偏置场的实验研究

铌酸锂晶体的内偏置场对铁电应用、电光应用和非线性光学应用等均有直接影响。本工作建立了铌酸锂(LN)晶体内偏置场测试方法,对同成分铌酸锂(CLN)晶体、近化学计量比铌酸锂(nSLN)晶体、掺杂铌酸锂(doped LN)晶体的内偏置场和矫顽场进行测量。结果表明,CLN晶体内偏置场最高(E_int=2.53 kV/mm),nSLN晶体的内偏置场大幅降低,其中富锂熔体法生长和气相输运平衡(vapor transport equilibration, VTE)法结合得到的nSLN晶体的内偏置场最小,与CLN晶体相比降低了约两个数量级;掺杂铌酸锂晶体的内偏置场与CLN晶体相比也普遍降低,其中掺6.5%(摩尔分数)Mg的CLN晶体的内偏置场约为CLN晶体的四分之一,掺7%(摩尔分数)Zn的CLN晶体的内偏置场约为CLN晶体的六分之一。最后对组分和掺杂影响内偏置场的因素进行了简要分析。     

论直拉单晶炉技术平台的逻辑演进

要求不断增大晶棒直径、不断提高晶体质量的晶圆市场,推动我国直拉单晶炉产品系列出现过三代更替,与此对应,产品赖以存在的技术平台也经历了三个阶段的演进.第四代产品研发需要在以往技术积累基础上,在炉室材料、炉体结构、焊接工艺、机械传动和电气控制、计算机智能控制、磁场发生装置和热场材料等方面进行新一轮技术创新.     

Dynamics of the Reorientation of a Ferroelectric Liquid Crystal Under an Electric Field Studied by Time-Resolved Optical Waveguide Spectroscopy

Abstract

The dynamic structure and molecular reorientation of a ferroelectric liquid crystal induced by an alternating electric field have been investigated by time-resolved optical waveguide spectroscopy (TROWS) in which the transient waveguide mode patterns were recorded as a function of both time and angle of incidence of a probe beam. A ferroelectric liquid crystal, 4-(2S, 3S)-[2-chloro-3-methylpentanoyloxy]-4′-octyloxybiphenyl (3M2CPOOB) was utilized, which showed a fast response to an external electric field in the order of a microsecond. Under a high electric field, it forms the so-called bookshelf structure in which the director of 3M2CPOOB is tilted by 22.5° away from the smectic layer normal in the SmC* phase. Time-resolved waveguide mode patterns were successfully obtained with a time-resolution of 1.0 μs which enabled us to determine the transient features of dielectric tensor of 3M2CPOOB molecules in three dimensional coordinate system. A model that the molecular reorientation coupled with the layer buckling and the rotation around the cone was proposed from the quantitative analysis of the TROWS data.     

Ionic impurity transport and partitioning at the solid–liquid interface during growth of lithium niobate under an external electric field by electric current injection

Transport of ionic species in the melt and their partitioning at the solid–liquid interface during growth of lithium niobate was studied under the influence of intrinsic and external electric fields. A Mn-doped lithium niobate (Mn:LiNbO₃) single crystal was grown via the micro-pulling-down (μ-PD) method with electric current injection at the interface. Mn ions were accumulated or depleted at the interface, depending on the sign of the injected current. The electric current injection induced an interface electric field as well as a Coulomb force between the interface and Mn ions. The electric field modified the transportation of Mn ions and their partitioning into the crystal, while the Coulomb force led to adsorption or rejection of Mn ions at the interface in addition to Mn concentration change due to the electric field. Effect of the Coulomb force was often observed to be larger on Mn concentration at the interface than that of the induced electric field, and dominated the redistribution of Mn in the solid. It has been experimentally and analytically shown that Mn concentration partitioned into the crystal can be obtained by multiplying Mn concentration at the interface by a field-modified partition coefficient, k_E0, instead of the conventional equilibrium partition coefficient, k₀.     

Modification in dielectric properties of SWCNT doped ferroelectric liquid crystals

Effect of single walled carbon nanotubes (SWCNT) in ferroelectric liquid crystal (FLC) geometry has been studied for low and high concentrations of dopant. The results are compared with the characteristics of pure FLC system. An appreciable change in dielectric permittivity, relaxation behavior and other vital parameters has been observed for SWCNT doped FLC system, which shows the adaptability of carbon nanotubes with that of pure FLC molecule. Under high electric field, highly concentrated SWCNT doped FLC shows enormously large values of dielectric loss. This is due to the high conductivity of SWCNT at higher electric field. Interestingly, such effect is not much prominent for the low concentration of the SWCNT doped FLC system.     

Crystal growth of InN by MOCVD with electric field along the c-axis

We report on physical properties of InN grown by metalorganic chemical vapor deposition (MOCVD) with electric field applied along the c-axis. The electric field is applied continuously from the growth of the low temperature InN buffer layer to the procedure of cooling down to room temperature. As a result, the crystal morphology degrades, c-lattice constant elongates by 0.12% at ±1 kV/cm, Hall mobility decreases, and the phonon vibration along the c-axis broadens, which suggests that the physical properties of InN can be controlled by the electric field applied along the c-axis during the crystal growth.