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1.
利用金属有机物化学气相沉积(MOCVD)生长技术,制备本征ZnO薄膜,并研究薄膜的结构、形貌及光电等性能.结果表明:衬底温度对ZnO薄膜的微观结构、电学、光学及表面形貌等有显著影响.在衬底温度为180℃时获得电阻率为2.17×10-2Ω·cm.平均透过率为85;的低电阻、高透过率、结晶质量高、表面呈绒面结构的本征ZnO薄膜.对本征ZnO薄膜进一步掺杂和结构优化有望用于硅薄膜太阳能电池的前电极.  相似文献   

2.
采用溶胶-凝胶法在玻璃基片上制备掺镓氧化锌透明导电薄膜,用X射线衍射仪、扫描电子显微镜、紫外可见光分光光度计、霍尔效应仪等测试分别表征GZO薄膜的晶体结构、表面形貌、光电性能等,研究Ga掺杂量对GZO薄膜性能的影响.结果表明:所制备的GZO薄膜均为六方纤锌矿结构并有沿c轴择优生长趋势,随着Ga掺杂量的增加,薄膜透过率先增加再减小,当Ga掺杂量为4at;时透过率最高,可见光区平均透过率达97.4;,薄膜电阻率则随掺杂量增加而下降,在Ga掺杂量为5at;时达最小值7.62×10-3 Q·cm.  相似文献   

3.
采用射频磁控溅射法在不同Ar气流量条件下制备了多组微晶硅薄膜,研究了Ar气流量对薄膜微观结构及光/电学性能的影响.结果表明:当Ar气流量的较小时,微晶硅薄膜的沉积速率较高,薄膜的晶化率、晶粒尺寸以及粗糙度处于较好的生长态势.同时,薄膜的光学性能发生明显变化,对于长波长范围内薄膜的光学透过率随Ar气流量的增大逐渐下降.薄膜的电学性能表现为随Ar气流量的增大,少子寿命呈现出先增大后大幅降低的变化趋势.  相似文献   

4.
室温下利用直流磁控溅射法在有ZnO缓冲层的柔性衬底 PET上制备出了可见光透过率高、电阻率低的掺锆氧化锌(ZnO: Zr)透明导电薄膜,研究了厚度对ZnO: Zr薄膜结构及光电性能的影响.结果表明,ZnO: Zr薄膜为六方纤锌矿结构的多晶薄膜.实验获得ZnO: Zr薄膜的最小电阻率为2.4×10-3 Ω·cm,其霍尔迁移率为18.9 cm2·V-1·s-1 ,载流子浓度为2.3×1020 cm-3.实验制备的ZnO: Zr薄膜具有良好的附着性能,其可见光平均透过率超过92;.  相似文献   

5.
采用磁控反应共溅射的方法,以金属Ce和Sn为金属源,成功地制备出CeOx-SnOx薄膜.利用扫描电子显微镜(SEM)、X射线衍射(XRD)、透射电子显微镜(TEM)和X射线光电子能谱(XPS)等测试手段对薄膜的结构、表面形貌及成分进行了分析和表征.结果表明薄膜以岛状模式生长,随氩氧比降低,结晶性增强,出现CeO2和SnO相.此外,利用紫外-可见分光光度计对薄膜的光学性能进行了研究,测试结果表明薄膜对紫外光有极强的吸收作用.当氩氧流量比为3∶1时,紫外光平均透过率仅为5.80;,而可见光平均透过率为81.48;.  相似文献   

6.
研究了衬底温度、真空度、激光能量、激光脉冲频率及退火处理对飞秒激光制备硅基ZnO大面积均匀薄膜的结构和性能的影响.结果表明,当激光能量为1.5mJ、脉冲频率为400 Hz、真空度为1.0 mPa、衬底温度为80℃时,所制备的薄膜质量最佳.薄膜呈高度c-轴取向,为典型的六方纤锌矿结构,晶粒沿垂直于衬底表面的方向生长;当衬底温度高于80℃时,随着温度的升高,c-轴取向度降低.80℃制备的薄膜在可见紫外区域透过率达98;,电阻率随温度升高而减小,退火后薄膜的透过率增大、电阻率升高.  相似文献   

7.
以醋酸锌水溶液为前驱体溶液,采用超声喷雾热分解法在玻璃衬底上制备得到了温度在350℃到450℃范围内的ZnO薄膜.用X射线衍射(XRD)、扫描电镜(SEM)及紫外-可见分光光度计分析了ZnO薄膜的晶体结构、微观形貌及其光学性质,重点探究了衬底温度对ZnO薄膜生长过程及微观结构的影响.分析表明:制备的ZnO薄膜为六角铅锌矿结构,衬底温度对薄膜的质量有着重要的影响;所得薄膜在400℃时结晶性能好,沿c轴择优取向生长,具有优良的均匀性和致密性;所制备的薄膜在可见光区透过率高达86;以上,在紫外光区吸收强烈.  相似文献   

8.
宽带隙化合物半导体Zn1-xMgxO薄膜的制备   总被引:1,自引:0,他引:1  
利用超声雾化热分解技术,在玻璃衬底上生长出宽带隙的Zn1-xMgxO薄膜.所有样品在可见光范围内的透过率可达到85;以上.X射线衍射的测试结果表明所有样品都具有c轴择优生长特性,并且随薄膜中Mg含量的不同出现规律性变化.光致发光谱表明Mg掺入后ZnO薄膜的紫外发射峰出现了蓝移,实现了对禁带宽度的调节.  相似文献   

9.
以硝酸铈(Ce(NO3)3·6H2O)水溶液为前驱溶液,采用自制超声喷雾热解装置在石英衬底上沉积制备CeO2薄膜,并通过X射线衍射(XRD)、扫描电镜(SEM)、紫外可见分光光度计等分析薄膜晶体结构、微观形貌及光学特性.结果表明,随着沉积温度升高,薄膜择优生长取向逐渐变为(200);当沉积温度为500℃时,薄膜具有良好的致密性;薄膜在可见光区表现出近85;的高透过率,同时发现随着沉积温度升高,薄膜透过率逐渐增大,光吸收逐渐由缺陷吸收转变为本征吸收.  相似文献   

10.
P型ZnO薄膜的制备及其在太阳电池中的初步应用   总被引:3,自引:0,他引:3  
利用超声雾化热分解技术(USP)、通过N-Al共掺的方法,在coming 7059衬底上生长出P型透明导电膜.该薄膜在可见光范围内的透过率可达到90;以上.X射线衍射的测试结果表明:P型透明导电膜具有c轴择优生长特性.通过霍耳测试得到P型ZnO薄膜的电学特性为:电阻率为4.21 Ω·cm、迁移率是0.22 cm2/(V·s)、载流子浓度为6.68×1018cm-3.此材料初步应用到微晶硅电池中,其开路电压为0.47 V.  相似文献   

11.
Rakin  V. I. 《Crystallography Reports》2020,65(6):1033-1041
Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...  相似文献   

12.
The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.  相似文献   

13.
A review of measurement of thermophysical properties of silicon melt   总被引:2,自引:0,他引:2  
Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi3 existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.  相似文献   

14.
SAXS in situ experiments on the evolution of TMOS solutions during hydrolysis and polycondensation lead to power laws with scaling exponents ≈ 2. It is suggested that this could be the result of the polydispersity of the samples and that only an apparent fractal dimension can be obtained in this way. Kinetic studies tend to indicate that agglomeration in the sol is the result of a diffusion-controlled process.  相似文献   

15.
Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.  相似文献   

16.
We investigate the possibility of controlling the curvature parameters of parabolic mirrors that are modular elements of two types consisting of a base and thin inserts placed at the opposite side of the work surface. In the first type of modular elements, bending is controlled by the difference in the coefficients of the thermal expansion of the base and inserts. In the second type of elements, the profile is changed by the piezoelectric straining of the inserts under an electric field. A correlation is established between the parameters of modular elements and their surface curvature profile.  相似文献   

17.
Crystallography Reports - Macroscopic jumps of plastic deformation (few percent in amplitude) on creep curves of aluminum–magnesium alloy, caused by a local effect of concentrated solution of...  相似文献   

18.
Crystal chemical characteristics of the α and β modifications of Zn2V2O7 are calculated based on in situ high-temperature X-ray measurements. The expansion of the structure is found to be strongly anisotropic up to the negative volumetric thermal expansion of the α-Zn2V2O7 unit cell in the temperature range of 300–600°С, α V =–17.94 × 10–6 1/K. The transformations of the “hard” and “soft” sublattices with an increase temperature and at the phase transition are considered in detail. It is shown that the negative volumetric thermal expansion of α-Zn2V2O7 is due to the degeneracy of the zigzag-like shape of zinc–oxygen columns at constant distances between their vertices.  相似文献   

19.
I. Avramov 《Journal of Non》2011,357(22-23):3841-3846
The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts xi of all oxides dissolved in SiO2, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature Tr , at which viscosity is ηr = 1013 [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, li is a product of molar part xi and a specific dimensionless coefficient 0  ki  1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature Tr,SiO2 of pure SiO2.  相似文献   

20.
Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.  相似文献   

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