等离子体Ag/TiO2纳米管阵列的制备及其光催化性能研究

以电化学阳极氧化法制备的Ti O2纳米管阵列为基底,分别通过电化学沉积法、化学还原法和浸渍法制备出Ag修饰的Ti O2纳米管阵列,采用XRD、FESEM和UV-Vis等测试手段对样品的组成、结构及形貌等进行表征。以气相苯为降解物,对样品进行光催化活性测试。结果表明:与其他两种方法相比,化学还原法使得Ag纳米颗粒均匀分布在Ti O2纳米管阵列的表面,并表现出更好的光催化降解气相苯的能力。     

Cu∶CdS/TiO2的制备及其光电化学性能研究

采用水热法制备(001)晶面裸露的TiO2纳米片阵列薄膜,并采用水热法进行CdS纳米颗粒复合,探讨不同水热反应时长对复合薄膜结构及性能的影响.为了提高复合薄膜的光电化学性能,在水热反应过程中引入Cu前驱体,并探讨不同掺杂浓度对复合薄膜性能的影响.研究结果表明Cu元素掺杂有效拓宽了CdS复合TiO2纳米片阵列薄膜(CdS/TiO2)的光吸收范围,并且提高了CdS/TiO2的光电化学性能.当水热反应3h,Cu掺杂浓度为1∶1 000时,CdS/TiO2的光电性能达到最佳.     

铋铁共掺纳米TiO2复合薄膜的制备及光催化性能

本文以钛酸丁酯、硝酸铋、硝酸铁为主要原料,采用溶胶-凝胶法制备了铋铁共掺的纳米TiO2复合薄膜.用XRD、UV-VIS、SEM及降解率等方法对样品进行了表征.以甲基橙为降解物,考察Bi3+和Fe3+掺杂对TiO2复合薄膜催化剂的光催化活性影响及其机理研究.结果表明Bia+和F3+掺杂后,纳米TiO2复合薄膜光催化活性有了明显的提高.     

TiO2-Pt-CoPi三元复合物的制备、表征和光催化性能研究

以钛酸正丁酯TBT为原料,采用水热法制备了TiO2纳米片,并用光沉积法将Pt纳米颗粒和CoPi催化剂分步沉积在TiO2纳米片上,制备TiO2-Pt-CoPi三元复合物.利用X射线衍射(XRD)、扫描电镜(SEM)等对样品进行了表征,测试了三元复合物的光催化活性.实验结果表明,通过控制光沉积时间、顺序等因素对复合光催化剂的光催化性能进行优化,大大提升了其完全光解水的光催化活性.     

纳米结构WO3/TiO2复合薄膜的制备及应用进展

WO3/TiO2复合薄膜具有许多特性,是一种优良的光电功能薄膜材料.利用先进的制膜技术获得性能优异的纳米结构WO3/TiO2复合薄膜,对提高光电器件的性能及应用具有重要意义.本文着重介绍了溶胶-凝胶法、水热法、电沉积法和磁控溅射法制备纳米结构WO3/TiO2复合薄膜.总结了纳米结构WO3/TiO2复合薄膜在电致变色智能窗、光催化技术、湿度传感器上的应用.最后,针对纳米结构WO3/TiO2复合薄膜现状提出了未来发展趋势.     

机械化学合成CdS/TiO2复合纳米材料及其光催化性能研究

以纳米CdS和TiO2为原料,采用简便的机械化学法合成了CdS/TiO2复合光催化剂.用X射线衍射(XRD)、X射线光电子能谱(XPS)、激光拉曼光谱、透射电镜(TEM)、紫外-可见漫反射光谱(DRS)等手段对样品进行表征和分析.以亚甲基蓝为目标降解物,评价了其光催化活性.结果表明,机械化学有效促进了CdS在TiO2纳米颗粒表面的分散和相互作用,形成了CdS/TiO2复合纳米结构的光催化剂,25wt;-CdS/TiO2的可见光催化活性较纯CdS提高了5倍,在可见光照射下,其光电流响应提高了5倍.CdS/TiO2光催化活性的提高归结于CdS的表面杂化作用,提高了光生电子-空穴的有效分离与迁移.     

三维In2S3/Ag/TiO2纳米网对9-蒽羧酸的光催化性能研究

采用光催化还原法以及连续离子层吸附法(SILAR)分别将Ag和In2S3纳米粒子修饰在TiO2纳米网上,成功制备了In2 S3/Ag/TiO2复合纳米材料.通过光催化降解9-蒽羧酸(9-ACA)来评价催化剂的光催化性能以及优化In2S3的沉积圈数.实验发现,In2S3/Ag/TiO2复合纳米材料的光吸收范围从紫外光区扩展至可见光区,并表现出增强的光催化降解9-ACA的效率.其中,沉积了7圈In2S3的In2S3/Ag/TiO2纳米网表现出最高的光催化降解效率,在60 min内,对9-ACA的降解效率达到了98.66;.此外,本文还对In2S3/Ag/TiO2复合纳米材料光催化降解9-ACA的机理进行了讨论.     

电气石表面TiO2微孔空心球簇的制备及光催化活性研究

用溶胶-凝胶技术在紫铜表面制备含电气石矿物粉末的TiO2复合薄膜,研究薄膜的制备方法、显微结构及其光催化活性.用SEM技术研究电气石-TiO2复合薄膜的微观结构和电气石表面TiO2的显微结构,测量了TiO2空心球直径、TiO2空心球簇大小,同时用电子探针对电气石-TiO2复合薄膜中的TiO2空心球簇表面及球簇周围TiO2膜进行了成分分析;并用电气石/TiO2复合薄膜光催化降解甲基橙水溶液,研究电气石对TiO2薄膜光催化活性的影响.结果发现,紫铜表面上电气石微粒均匀分布在TiO2薄膜中,且在电气石微粒表面可形成TiO2微孔空心球和微孔空心半球构成的微孔空心球簇,空心球和空心半球的平均粒径为2μm;经紫外线照射180min后,与不含电气石的TiO2薄膜相比,含电气石0.5;的TiO2复合薄膜对甲基橙的光催化降解率可提高31.9;,电气石可以明显提高TiO2薄膜的光催化活性.     

电解液温度对二氧化钛纳米管阵列结构及光电性能的影响

以氟化铵(NH4F)、乙二醇溶液为电解液,在不同的电解液温度(0～50℃)条件下,采用电化学阳极氧化法制备二氧化钛(TiO2)纳米管阵列.采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、紫外-可见分光光度计(UV-Vis)对TiO2纳米管阵列的形貌、结构和光学性能进行表征.结果表明,电解液温度高于20℃均能制备出纳米管阵列.光照下电解液温度40℃时制备的TiO2纳米管阵列具有最高光电流密度(Iph)0.2408 mA/cm2.以活性艳红X-3B为目标降解物,在室温、紫外光照射条件下考察了电解液温度对光催化活性的影响,结果显示电解液温度40℃时制备的TiO2纳米管阵列具有最高的光催化活性.     

α-Fe2O3/TiO2光催化剂的制备及可见光催化降解罗丹明B的研究

采用浸渍法制备不同掺杂量的负载型光催化剂 α-Fe2O3/TiO2,通过XRD、SEM-EDX、XPS和N2-sorption等手段对其进行表征,并研究其在可见光照射下对罗丹明B的降解性能.考察了不同掺杂量的复合纳米粒子、不同浓度的H2O2溶液、不同pH等条件对可见光降解罗丹明B的影响.结果表明,复合α-Fe2O3/TiO2催化剂的光催化活性均高于单一的α-Fe2O3或TiO2,其中α-Fe2O3掺杂量为6.0wt;的α-Fe2O3/TiO2的光催化活性和光降解稳定性最好.     

CsI-LiCl共晶材料的坩埚下降法生长与闪烁性能研究

本文采用坩埚下降法,在真空密封的石英坩埚中成功生长出CsI-LiCl与CsI-LiCl:Na共晶闪烁体。通过扫描电子显微镜(SEM)观察晶体微结构表明该共晶中LiCl相与CsI相存在周期性的层状排列,CsI相的厚度在5 μm左右。共晶样品的X射线激发发射谱显示在CsI-LiCl和CsI-LiCl:Na共晶样品存在缺陷发光,在CsI-LiCl样品中还观察到了纯CsI的自陷激子(STE)发光。CsI-LiCl样品在α粒子激发下的多道能谱中观察到明显的全能峰,这一结果证明CsI-LiCl共晶可用于热中子探测的潜力。     

静电纺丝法制备CeO2微纳米纤维及其除氟性能

以聚丙烯腈(PAN)为载体,六水合硝酸铈[Ce(NO₃)₃·6H₂O]为原料,采用静电纺丝法制备了Ce(NO₃)₃/PAN纤维,在空气中热处理得到CeO₂微纳米纤维,通过XRD、BET和SEM对CeO₂微纳米纤维进行表征。采用静态吸附实验探讨了CeO₂微纳米纤维去除水溶液中氟离子的性能,考察了溶液pH值、初始氟离子浓度及共存阴离子等对吸附性能的影响。结果表明,pH=3时,CeO₂微纳米纤维对F^-的吸附性能最佳,CeO₂吸附量随着F^-浓度的增大呈上升趋势。CeO₂微纳米纤维对F^-的吸附等温线遵循Langmuir模型,二级动力学模型能很好地描述CeO₂微纳米纤维对F^-的吸附过程。CeO₂微纳米纤维的除氟性能优良,可为其实际应用提供理论参考。     

X-ray analysis of sideroxol from <Emphasis Type="Italic">Sideritis leptoclada</Emphasis>

Sideroxol (1), a kaurane diterpene which has the ent-7α,18-dihydroxy-15β,16β-epoxykaurane structure (MW = 320.47, C₂₀H₃₂O₃) was obtained from the acetone extract of Sideritis leptoclada plant as well as from some other Sideritis species. It crystallizes in the orthorhombic space group P2₁, 2₁, 2₁ with a = 10.967(3), b = 24.555(5), c = 6.372(4) Å, Dc = 1.240 g cm⁻³, Z = 4, and refines to R = 0.065 for 721 independent reflections. The skeleton consists of three fused six-membered rings and a five-membered ring with fused epoxide. The six membered rings exhibited slightly distorted chair conformation. In addition to sideroxol, two kaurane and five kaurene diterpenes were isolated from the hexane and acetone extracts of the studied plant.     

New zeotype borophosphates with chiral tetrahedral topology: (H)0.5M1.25(H2O)1.5[BP2O8]·H2O (M = Co(II) and Mn(II))

Two new isostructural open‐framework zeotype transition metal borophosphate compounds, (H)_0.5M_1.25(H₂O)_1.5[BP₂O₈]·H₂O (M = Co(II) and Mn(II)) were synthesized by mild hydrothermal method. The structure of compounds were characterized by single‐crystal X‐ray diffraction which have ordered, alternating, vertex‐sharing BO₄, PO₄, and (MO₄)OM(H₂O)₂ groups with hexagonal, P 6₁ 2 2 (No 178) space group and unit cell parameters for Co a = 9.4960(6) Å, c = 15.6230(13) Å, for Mn a = 9.6547(12) Å, c = 15.791(3) Å, Z = 1 for both of them. TGA/DTA analysis, IR spectroscopy were used for characterization. Magnetic susceptibility measurements for both of the compound indicate strong antiferromagnetic interaction between metal centers. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique

We have studied the optical, structural and surface morphology of doped and undoped GaN thin films. The p- and n-type thin films have been successfully prepared by low-pressure MOCVD technique by doping with Mg and Si, respectively. The different carrier concentrations were obtained in the GaN thin films by varying dopant concentrations. Photoluminescence (PL) studies were carried to find the defect levels in the doped and undoped GaN thin films at low temperature. In the undoped GaN thin films, a low intensity and broad yellow band peak was observed. The donor–acceptor pair (DAP) emission and its phonon replicas were observed in both the Si or Mg lightly doped GaN thin films. The dominance of the blue and the yellow emissions increased in the PL spectra, as the carrier concentration was increased. The XRD and SEM analyses were employed to study the structural and surface morphology of the films, respectively. Both the doped and the undoped films exhibited hexagonal structure and polycrystalline nature. Mg-doped GaN thin films showed columnar structure whereas Si-doped films exhibited spherical shape grains.     

Solubility of Ag2O into the Na2O–B2O3–Al2O3 system

The solubility of Ag₂O was measured for the Na₂O–B₂O₃ and Na₂O–B₂O₃–Al₂O₃ system with the rotating crucible method and static method, respectively, under air atmosphere at temperatures ranging from 1273 to 1423 K. The contamination of melts from crucibles could be avoided by the rotating crucible method, with which it became possible to measure the solubility of Ag₂O for the Na₂O–B₂O₃ system above the melting point of Ag for the first time. It was found that the addition of Na₂O decreases the solubility of Ag₂O while the addition of Al₂O₃ had little effect on the solubility. The effect of Na₂O and Al₂O₃ on the solubility of Ag₂O is expressed by interaction coefficients and is analyzed in terms of the basicity of melts. The solubility of Ag₂O in Na₂O–B₂O₃–Al₂O₃ melts increased with increased temperature. This phenomena was explained by a small enthalpy change in oxidation of silver.     

Considerations on the structure and physical properties of B2O3-SiO2 and GeO2-SiO2 glasses

Data of density, refractive index and thermal expansion coefficient for B₂O₃-SiO₂ and GeO_2-SiO₂ glasses have been analyzed. The volumes of the structural units are the same found for the vitreous B₂O₃, GeO₂ and SiO₂. The volume of any structural unit is constant over the entire composition region of the glass system. The same has been found for the differential refraction and unit refraction of the structural units in these glasses. Different features are observed for the differential expansion of the structural units. There is a considerable change with composition in the differential expansion of BO₃, GeO₄ and SiO₄ units. The effect is attributed to a change in the asymmetry of vibrations with the number of Si-O-B or Si-O-Ge linkages in the matrix. The thermal expansion coefficient is mainly determined by the contribution of B₂O₃ or GeO₂ in the concerned glasses.     

Molecular structure and crystal packing of uncomplexed 1,6-bis(N-cyano-p-methoxy-anilino)-2,4-hexadiyne, C22H18N4O2

The X-ray crystal structure of 1,6-bis(N-cyano-p-methoxy-anilino)-2,4-hexadiyne, C₂₂H₁₈N₄O₂, is determined. The crystal packing is dominated by phenyl stacking interactions. Weak C–H···N hydrogen bonds help align the molecules. C–H··· hydrogen bonding is not apparent.     

Structural and electrical properties of vapour phase grown Cd1 − xFexTe single crystals

Cd_1 − xFe_xTe single crystals were prepared by vapour phase growth method in the composition range of 0 ≤ x ≤ 0.03. Chemical analysis, surface morphology, structural investigations and electrical properties were carried out by EDAX, SEM, XRD, TEM and transport technique, respectively. Microscopic variations between the target and actual compositions were noticed. Morphology studies revealed that dislocation aided growth is active in the present crystals. TEM and XRD studies confirmed that the samples of all compositions crystallized in zinc blende structure, and the lattice parameters varied almost linearly decreases with Fe content. At room temperature, the resistivity of the Cd_1 − xFe_xTe crystals of all compositions (x = 0.01, 0.015, 0.02, 0.025 and 0.03) lies in the range of 3.5-6.5 M Ω, the activation energies lie in the range of 63-133 meV, and the samples were show the ‘p’ type conductivity.     

空位浓度对纤锌矿CdS电子结构和光学性质影响的第一性原理研究

本文基于密度泛函理论的平面波超软赝势方法,采用第一性原理研究了含Cd空位缺陷CdS和含S空位缺陷纤锌矿CdS的几何结构、能带结构、电子态密度及光学性质。通过计算分析可知,含Cd空位缺陷的CdS体系均为p型半导体,含S空位缺陷的CdS体系跃迁方式均由直接跃迁变为间接跃迁。Cd、S空位缺陷的CdS体系的态密度总能量降低。空位CdS体系相较于本征CdS体系的静介电常数均有提高,并随着空位浓度的增大而增大,Cd空位缺陷体系更为明显,极化能力得到显著提升。空位Cd的CdS体系相较于本征CdS体系在红外波段存在明显的吸收,空位S的CdS体系相较于本征CdS体系在可见光波段存在明显的吸收。