溶液燃烧法合成La和Ce共同改性的γ-Al2O3

采用溶液燃烧法,以硝酸铝,硝酸镧,硝酸铈为氧化剂,氨基乙酸为还原剂,制备La和Ce共同改性的γ-Al2O3。利用XRD、TG-DTA、TEM、XPS等分析手段对产物以及前驱体进行表征,系统考察煅烧时间、煅烧温度、反应物的摩尔配比等工艺参数对最终产物的组成和粒径的影响,并确定了最佳工艺条件。溶液燃烧法制备La/Ce/γ-Al2O3最佳反应条件为:硝酸镧和硝酸铈的物质的量比为2∶1,煅烧时间为4 h,煅烧温度为950℃。     

低温燃烧合成法制备纳米氧化镧

以六水硝酸镧、一水柠檬酸为原料,利用低温燃烧合成法制备了纳米La2O3粉体.利用XRD、TG-DTA和TEM等测试方法对干凝胶热分解过程及最终形成的纳米La2O3粉体进行了表征,并研究了前驱体溶液的pH值、物质的量配比、煅烧温度、煅烧时间对粉体粒径和形貌的影响.实验结果表明,在溶液的pH=2,La(NO3)3·6H2O:C6H8O7·H2O=6:7,煅烧温度在700~900 ℃,煅烧时间为1.5 h时,可获得粒径均匀的纳米La2O3粉体,且所得产物的粒径范围为50~100 nm.     

镧钡改性的γ-Al2O3的制备及其热稳定性研究

以硝酸铝为氧化剂,甘氨酸作为还原剂,添加硝酸钡-硝酸镧作为改性剂,通过溶液燃烧合成法制备了改性的γ-Al2O3纳米粉体.通过对产物进行X射线衍射分析(XRD)、热重-差热分析(TG-DTA)、扫描电镜分析(SEM)和比表面积分析,研究了改性剂的添加量、煅烧温度、煅烧时间等工艺参数对最终产物的物相、形貌、粒径等的影响.结果表明,制备硝酸钡-硝酸镧改性的γ-Al2O3的最佳工艺条件为:以甘氨酸为燃烧剂,硝酸镧、硝酸钡、硝酸铝的摩尔比为0.01:0.03:1,煅烧温度为1050℃,煅烧时间为4h.通过掺杂稀土元素La和碱土金属元素Ba,可同时阻止Al3+的表相和体相扩散.     

Bi3.25La0.75Ti3O12纳米片的水热合成及表征

以硝酸铋、硫酸钛和硝酸镧为原料,氢氧化钠为矿化剂,采用水热法制备了镧掺杂的钛酸铋片状纳米材料,研究了水热温度和水热时间对其结构的影响.采用XRD和SEM对产品的物相和结构进行了表征.结果表明:以硫酸钛作为无机钛源,在较低的水热温度(200 ℃)、水热时间为6 h时可以制备出花状的Bi3.25La0.75Ti3O12纳米片.     

微波诱导燃烧法合成微纳米LaBO3粉体

以硝酸镧(La(NO3)3·nH2O)、硼酸(H3BO3)、甘氨酸(NH2CH2COOH)和氧化铕(Eu2O3)为原料,碳酸钠(Na2CO3)为助熔剂,通过微波诱导燃烧法制备微纳米LaBO3粉体和掺杂Eu3+粉体,并对其产物粒度分布进行检测,寻找合适的合成条件来制备微纳米级硼酸镧粉体.讨论了燃烧剂的用量,功率,温度,时间等对产物的影响.采用XRD,SEM,PL等检测手段对产物进行表征,确定合成微纳米LaBO3粉体和掺杂Eu3+粉体的最优条件为:微波功率350 W,反应10 min,马弗炉锻烧500℃,保温3h.合成的产物结晶程度高,分布均匀,分散性好.     

溶胶-凝胶法制备La2CuO4纳米晶生长动力学研究

以硝酸镧和硝酸铜为起始原料,柠檬酸为络合剂,乙二醇为交联剂,采用溶胶-凝胶法制备了La2CuO4纳米晶.通过XRD和FESEM对La2CuO4粉体进行了测试和表征,研究了不同柠檬酸配比对La2CuO4相组成、显微结构以及晶体生长活化能的影响.结果表明:当柠檬酸与金属阳离子总和(La3++Cu2+)的物质的量比为1∶1,600℃煅烧保温2h后,可获得单一正交晶型的La2CuO4,颗粒形貌为球状结构,平均尺寸为65 nm;在制备过程中提高柠檬酸的加入量,能够降低La2CuO4晶体的生长活化能,当物质的量比由0.5∶1增加至1∶1时,生长活化能由67.3 kJ/mol降低到50.5 kJ/mol.     

均相沉淀法制备γ-La2S3粉体及球形形貌控制研究

以La2O3和尿素为原料,丙三醇为分散剂,采用均相沉淀方法制备镧盐前驱体,并通过H2S硫化得到γ-La2S3粉体。采用X射线衍射仪和扫描电子显微镜对镧盐前驱体和γ-La2S3粉末的结构和形貌进行表征。结果表明,当加热温度为95℃,尿素和La2O3的物质的量比为15∶1,V(丙三醇)/V(水)=1∶1,反应时间为3 h时,可制备出高纯、分散性好、球形γ-La2S3纳米粉体。     

溶胶-凝胶法制备氧化铝陶瓷球的研究

采用溶胶-凝胶法结合乳液微封装技术,以异丙醇铝为原料,稀硝酸为胶溶剂制备了粒径为毫米级的α-Al2O3球,并通过TG-DSC、IR、SEM、X射线衍射等分析手段对样品进行了表征.研究了形成稳定透明溶胶反应体系的条件、固化温度对α-Al2O3球粒径的控制以及煅烧温度对氧化铝球的晶型的影响,并揭示了其成球机理.结果表明:澄清透明的稳定氧化铝溶胶形成条件是:异丙醇铝:水:硝酸的物质的量比为1:100:0.25,水解温度为85℃;氧化铝球的粒径随固化温度的升高而增大;在1200℃保温5h可以得到结晶度好的α-Al2O3球.所制备的α-Al2O3球表面光滑,粒径在0.5 ～1.5 mm之间,球形度大于98.3;.     

天然辉沸石为原料制备P型沸石的水热反应条件研究

以天然辉沸石为原料,经过酸化、碱溶处理,采用水热合成工艺,在保持n( SiO2)/n( Al2O3)＝3.5、n( Na2O)/n(SiO2)＝1.2、n(H2O)/n(Na2O)＝35不变的情况下合成制备P型分子筛.考察水热反应的晶化温度和晶化时间对合成P型分子筛晶型生长的影响,结果表明:水热温度由80 ℃上升至100 ℃,P型分子筛由没有成型到晶型出现,结晶度随着温度的升高逐渐增加,晶面对应越明显.合成P型分子筛的最佳温度为90℃,P型分子筛为集合球状,粒径大约为1 μm;随着水热时间的增长,P型分子筛慢慢成型,分子筛颗粒逐渐变大,6.5 h为最佳合成时间.并且可以看出控制反应时间得到的P型分子筛形状较为规则.     

NiTiO3纳米晶的溶胶-凝胶制备工艺研究

以无机镍盐和钛酸四丁酯为起始原料,采用溶胶-凝胶法制备了NiTiO3纳米晶.采用X射线衍射(XRD)、综合热分析仪(DSC/TG)以及透射电镜(TEM)对制备的纳米晶进行了测试和表征.研究了不同镍源、后处理温度对钛酸镍纳米晶相组成以及显微结构的影响.结果表明:以硝酸镍为起始原料更易获得单一物相的NiTiO3纳米晶;以硝酸镍为原料,乙醇为溶剂,n(柠檬酸):n(Ni2++Ti4+)=1:1,后处理温度为700 ℃为制备NiTiO3纳米晶的最佳工艺条件.由谢乐公式推算得出NiTiO3晶粒生长符合Brook关系式,计算得到晶粒生长活化能为Ea=43.07 kJ/mol.     

CsI-LiCl共晶材料的坩埚下降法生长与闪烁性能研究

本文采用坩埚下降法,在真空密封的石英坩埚中成功生长出CsI-LiCl与CsI-LiCl:Na共晶闪烁体。通过扫描电子显微镜(SEM)观察晶体微结构表明该共晶中LiCl相与CsI相存在周期性的层状排列,CsI相的厚度在5 μm左右。共晶样品的X射线激发发射谱显示在CsI-LiCl和CsI-LiCl:Na共晶样品存在缺陷发光,在CsI-LiCl样品中还观察到了纯CsI的自陷激子(STE)发光。CsI-LiCl样品在α粒子激发下的多道能谱中观察到明显的全能峰,这一结果证明CsI-LiCl共晶可用于热中子探测的潜力。     

静电纺丝法制备CeO2微纳米纤维及其除氟性能

以聚丙烯腈(PAN)为载体,六水合硝酸铈[Ce(NO₃)₃·6H₂O]为原料,采用静电纺丝法制备了Ce(NO₃)₃/PAN纤维,在空气中热处理得到CeO₂微纳米纤维,通过XRD、BET和SEM对CeO₂微纳米纤维进行表征。采用静态吸附实验探讨了CeO₂微纳米纤维去除水溶液中氟离子的性能,考察了溶液pH值、初始氟离子浓度及共存阴离子等对吸附性能的影响。结果表明,pH=3时,CeO₂微纳米纤维对F^-的吸附性能最佳,CeO₂吸附量随着F^-浓度的增大呈上升趋势。CeO₂微纳米纤维对F^-的吸附等温线遵循Langmuir模型,二级动力学模型能很好地描述CeO₂微纳米纤维对F^-的吸附过程。CeO₂微纳米纤维的除氟性能优良,可为其实际应用提供理论参考。     

X-ray analysis of sideroxol from <Emphasis Type="Italic">Sideritis leptoclada</Emphasis>

Sideroxol (1), a kaurane diterpene which has the ent-7α,18-dihydroxy-15β,16β-epoxykaurane structure (MW = 320.47, C₂₀H₃₂O₃) was obtained from the acetone extract of Sideritis leptoclada plant as well as from some other Sideritis species. It crystallizes in the orthorhombic space group P2₁, 2₁, 2₁ with a = 10.967(3), b = 24.555(5), c = 6.372(4) Å, Dc = 1.240 g cm⁻³, Z = 4, and refines to R = 0.065 for 721 independent reflections. The skeleton consists of three fused six-membered rings and a five-membered ring with fused epoxide. The six membered rings exhibited slightly distorted chair conformation. In addition to sideroxol, two kaurane and five kaurene diterpenes were isolated from the hexane and acetone extracts of the studied plant.     

New zeotype borophosphates with chiral tetrahedral topology: (H)0.5M1.25(H2O)1.5[BP2O8]·H2O (M = Co(II) and Mn(II))

Two new isostructural open‐framework zeotype transition metal borophosphate compounds, (H)_0.5M_1.25(H₂O)_1.5[BP₂O₈]·H₂O (M = Co(II) and Mn(II)) were synthesized by mild hydrothermal method. The structure of compounds were characterized by single‐crystal X‐ray diffraction which have ordered, alternating, vertex‐sharing BO₄, PO₄, and (MO₄)OM(H₂O)₂ groups with hexagonal, P 6₁ 2 2 (No 178) space group and unit cell parameters for Co a = 9.4960(6) Å, c = 15.6230(13) Å, for Mn a = 9.6547(12) Å, c = 15.791(3) Å, Z = 1 for both of them. TGA/DTA analysis, IR spectroscopy were used for characterization. Magnetic susceptibility measurements for both of the compound indicate strong antiferromagnetic interaction between metal centers. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique

We have studied the optical, structural and surface morphology of doped and undoped GaN thin films. The p- and n-type thin films have been successfully prepared by low-pressure MOCVD technique by doping with Mg and Si, respectively. The different carrier concentrations were obtained in the GaN thin films by varying dopant concentrations. Photoluminescence (PL) studies were carried to find the defect levels in the doped and undoped GaN thin films at low temperature. In the undoped GaN thin films, a low intensity and broad yellow band peak was observed. The donor–acceptor pair (DAP) emission and its phonon replicas were observed in both the Si or Mg lightly doped GaN thin films. The dominance of the blue and the yellow emissions increased in the PL spectra, as the carrier concentration was increased. The XRD and SEM analyses were employed to study the structural and surface morphology of the films, respectively. Both the doped and the undoped films exhibited hexagonal structure and polycrystalline nature. Mg-doped GaN thin films showed columnar structure whereas Si-doped films exhibited spherical shape grains.     

Solubility of Ag2O into the Na2O–B2O3–Al2O3 system

The solubility of Ag₂O was measured for the Na₂O–B₂O₃ and Na₂O–B₂O₃–Al₂O₃ system with the rotating crucible method and static method, respectively, under air atmosphere at temperatures ranging from 1273 to 1423 K. The contamination of melts from crucibles could be avoided by the rotating crucible method, with which it became possible to measure the solubility of Ag₂O for the Na₂O–B₂O₃ system above the melting point of Ag for the first time. It was found that the addition of Na₂O decreases the solubility of Ag₂O while the addition of Al₂O₃ had little effect on the solubility. The effect of Na₂O and Al₂O₃ on the solubility of Ag₂O is expressed by interaction coefficients and is analyzed in terms of the basicity of melts. The solubility of Ag₂O in Na₂O–B₂O₃–Al₂O₃ melts increased with increased temperature. This phenomena was explained by a small enthalpy change in oxidation of silver.     

Considerations on the structure and physical properties of B2O3-SiO2 and GeO2-SiO2 glasses

Data of density, refractive index and thermal expansion coefficient for B₂O₃-SiO₂ and GeO_2-SiO₂ glasses have been analyzed. The volumes of the structural units are the same found for the vitreous B₂O₃, GeO₂ and SiO₂. The volume of any structural unit is constant over the entire composition region of the glass system. The same has been found for the differential refraction and unit refraction of the structural units in these glasses. Different features are observed for the differential expansion of the structural units. There is a considerable change with composition in the differential expansion of BO₃, GeO₄ and SiO₄ units. The effect is attributed to a change in the asymmetry of vibrations with the number of Si-O-B or Si-O-Ge linkages in the matrix. The thermal expansion coefficient is mainly determined by the contribution of B₂O₃ or GeO₂ in the concerned glasses.     

Molecular structure and crystal packing of uncomplexed 1,6-bis(N-cyano-p-methoxy-anilino)-2,4-hexadiyne, C22H18N4O2

The X-ray crystal structure of 1,6-bis(N-cyano-p-methoxy-anilino)-2,4-hexadiyne, C₂₂H₁₈N₄O₂, is determined. The crystal packing is dominated by phenyl stacking interactions. Weak C–H···N hydrogen bonds help align the molecules. C–H··· hydrogen bonding is not apparent.     

Structural and electrical properties of vapour phase grown Cd1 − xFexTe single crystals

Cd_1 − xFe_xTe single crystals were prepared by vapour phase growth method in the composition range of 0 ≤ x ≤ 0.03. Chemical analysis, surface morphology, structural investigations and electrical properties were carried out by EDAX, SEM, XRD, TEM and transport technique, respectively. Microscopic variations between the target and actual compositions were noticed. Morphology studies revealed that dislocation aided growth is active in the present crystals. TEM and XRD studies confirmed that the samples of all compositions crystallized in zinc blende structure, and the lattice parameters varied almost linearly decreases with Fe content. At room temperature, the resistivity of the Cd_1 − xFe_xTe crystals of all compositions (x = 0.01, 0.015, 0.02, 0.025 and 0.03) lies in the range of 3.5-6.5 M Ω, the activation energies lie in the range of 63-133 meV, and the samples were show the ‘p’ type conductivity.     

空位浓度对纤锌矿CdS电子结构和光学性质影响的第一性原理研究

本文基于密度泛函理论的平面波超软赝势方法,采用第一性原理研究了含Cd空位缺陷CdS和含S空位缺陷纤锌矿CdS的几何结构、能带结构、电子态密度及光学性质。通过计算分析可知,含Cd空位缺陷的CdS体系均为p型半导体,含S空位缺陷的CdS体系跃迁方式均由直接跃迁变为间接跃迁。Cd、S空位缺陷的CdS体系的态密度总能量降低。空位CdS体系相较于本征CdS体系的静介电常数均有提高,并随着空位浓度的增大而增大,Cd空位缺陷体系更为明显,极化能力得到显著提升。空位Cd的CdS体系相较于本征CdS体系在红外波段存在明显的吸收,空位S的CdS体系相较于本征CdS体系在可见光波段存在明显的吸收。