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1.
采用阳极氧化法结合浸渍法在钛金属片基底上制备了TiO2负载RuO2纳米管阵列,利用场发射扫描电子显微镜(FE-SEM)、X射线衍射仪(XRD)、能谱仪(EDS)和紫外可见分光光度计对纳米管的形貌、结构和光学性能进行了表征,并研究了RuO2/TiO2纳米管阵列在紫外光和可见光下对亚甲基蓝溶液的光电催化性能.结采表明:RuO2/TiO2纳米管仍保持了纯TiO2纳米管的结构特征,部分Ru进入TiO2晶格代替了Ti的位置形成了固溶体,部分Ru以RuO2纳米粒子形式存在;RuO2/TiO2纳米管的光吸收波长发生了红移,且在整个可见光区均比纯TiO2纳米管光吸收能力强,RuO2/TiO2纳米管光电催化降解亚甲基蓝的4h降解率由纯TiO2纳米管的27;提高到79;;采用该法制备的TiO2纳米管阵列膜回收简单,反复使用20次后光电催化降解能力基本保持不变.  相似文献   

2.
首先采用阳极氧化工艺制备了TiO2纳米管阵列,然后利用水热工艺对其进行C包覆改性,探讨了热处理温度、F-浓度、阳极氧化电压、阳极氧化时间等参数对TiO2纳米管阵列形貌及性能的影响,并初步研究了其生长机理.通过实验得到TiO2纳米管阵列的最佳制备条件:F-浓度0.5wt;;阳极氧化电压30 V;阳极氧化时间1h;热处理温度450℃.C包覆改性后的TiO2纳米管阵列对可见光的吸收明显增强,尿素浓度为20wt;时制得的TiO2纳米管阵列对亚甲基蓝的光降解率高达92.7;,相较于未进行C包覆改性的TiO2纳米管阵列提高了7.9;,说明C包覆改性可以显著提高TiO2纳米管阵列的光催化性能.  相似文献   

3.
采用阳极氧化法在纯钛箔上制备出TiO2纳米管阵列,再通过化学水浴沉积法在TiO2纳米管阵列上负载CdS纳米颗粒.利用XRD、FESEM和UV-Vis分光光度计对样品的晶体结构、微观形貌和光学性质进行表征,并研究了不同含量CdS负载的复合薄膜对光催化降解气相苯性能的影响.结果表明,CdS纳米颗粒均匀沉积到TiO2纳米管阵列上,所制备的复合薄膜光吸收带边均扩展到了可见光区.CdS的修饰大幅度提高了TiO2纳米管阵列对气相苯的光催化降解活性,其中负载CdS质量分数为3;的TiO2纳米管阵列光催化活性最佳,80 min内对气相苯的去除率为80;,终产物CO2的浓度为640 mg/m3.  相似文献   

4.
以氟化铵(NH4F)、乙二醇溶液为电解液,在不同的电解液温度(0~50℃)条件下,采用电化学阳极氧化法制备二氧化钛(TiO2)纳米管阵列.采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、紫外-可见分光光度计(UV-Vis)对TiO2纳米管阵列的形貌、结构和光学性能进行表征.结果表明,电解液温度高于20℃均能制备出纳米管阵列.光照下电解液温度40℃时制备的TiO2纳米管阵列具有最高光电流密度(Iph)0.2408 mA/cm2.以活性艳红X-3B为目标降解物,在室温、紫外光照射条件下考察了电解液温度对光催化活性的影响,结果显示电解液温度40℃时制备的TiO2纳米管阵列具有最高的光催化活性.  相似文献   

5.
TiO_2纳米管阵列的制备及其光催化性能研究   总被引:3,自引:2,他引:1  
采用阳极氧化法在钛箔上制备了TiO_2纳米管阵列,利用场发射扫描电子显微镜(FSEM)、X射线衍射仪(XRD)和紫外-可见分光光度计对TiO_2纳米管的形貌、结构和光学性能进行表征,详细考察了阳极氧化工艺参数对纳米管阵列形貌的影响,探讨了氧化钛纳米管阵列的形成机理,并对其光催化活性进行了测试,研究结果表明:在0.5 wt; HF和1 mol/L H3PO_4电解液中,控制氧化电压为20 V,反应60 min后,在钛箔表面可获得垂直导向的TiO_2纳米管阵列,管内径为60~80 nm,管壁厚约10 nm;600 ℃热处理后的TiO_2纳米管阵列薄膜对349.7 nm近紫外光和443.9 nm可见光有较强的吸收能力;煅烧温度对纳米管的晶型结构和光催化活性有显著影响.  相似文献   

6.
以NH4F的乙二醇溶液为电解液,采用阳极氧化法在钛网表面制备了有序TiO2纳米管阵列.通过XRD、SEM等对TiO2纳米管阵列的结构、形貌进行表征,利用紫外-可见分光光度计对所制备样品的紫外可见吸收特性进行了表征.结果表明:在一定时间范围内,随着氧化时间的增加,纳米管管长和管径都会增大,但超过一定时间后,纳米管破损明显加剧且有脱落现象.另外,所制备样品的光学禁带(Eopt)比块状样品的大,但随着氧化时间的延长,纳米管的光学禁带并没有发生显著变化.不同时间下制备的纳米管对可见光的吸收率不一样.  相似文献   

7.
以电化学阳极氧化法制备的Ti O2纳米管阵列为基底,分别通过电化学沉积法、化学还原法和浸渍法制备出Ag修饰的Ti O2纳米管阵列,采用XRD、FESEM和UV-Vis等测试手段对样品的组成、结构及形貌等进行表征。以气相苯为降解物,对样品进行光催化活性测试。结果表明:与其他两种方法相比,化学还原法使得Ag纳米颗粒均匀分布在Ti O2纳米管阵列的表面,并表现出更好的光催化降解气相苯的能力。  相似文献   

8.
采用银镜反应对阳极氧化法制备的三维有序TiO2纳米管阵列进行Ag掺杂,利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)以及X射线能量色散光谱仪(EDX)研究了复合Ag/TiO2纳米管阵列的微观结构及形貌;并进一步利用恒流充/放电、循环伏安(CV)及交流阻抗(AC)等方法测试其电化学性能.结果表明:复合Ag/TiO2纳米管的首次放电比容量为168 mAh/g,高于纯TiO2纳米管的118 mAh/g,且具有更好的稳定性能及倍率性能;性能改善的原因不仅得益于导电率的提高,而且得益于Ag作为负极材料时具有储锂活性.  相似文献   

9.
采用化学水浴沉积法,在预制晶种层的基底上得到垂直底面生长的有序ZnO纳米棒阵列,再用反应磁控溅射方法,沉积制备ZnO-TiO2复合结构的纳米棒阵列.利用X射线衍射(XRD)和扫描电子显微镜(SEM)对制备得到的样品进行结构和形貌表征,研究了晶种层、水浴生长液浓度和磁控溅射氧氩比对复合纳米阵列的影响.制备得到了具有TiO2分枝的复合纳米棒阵列,并初步探讨了TiO2分枝的形成机理,为制备基于复合纳米棒阵列的器件提供了条件.  相似文献   

10.
采用电化学阳极氧化法,以含有0.25wt; NH4 F和2 mL H2 O的乙二醇溶液作为电解液制备了TiO2纳米管阵列,然后通过不同温度退火比较其形貌、结构、元素组成和亲水性能。实验表明,600℃以下温度退火基本不会引起TiO2纳米管阵列的形貌改变,但是600℃退火会使得部分TiO2纳米管坍塌。随着退火温度的升高,TiO2由无定型结构向晶体结构转变,同时接触角减小,亲水性变好。另一方面,F元素也会影响TiO2纳米管阵列的亲水性能,F元素含量越少,亲水性越好。  相似文献   

11.
Rakin  V. I. 《Crystallography Reports》2020,65(6):1033-1041
Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...  相似文献   

12.
A review of measurement of thermophysical properties of silicon melt   总被引:2,自引:0,他引:2  
Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi3 existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.  相似文献   

13.
Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.  相似文献   

14.
The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.  相似文献   

15.
Crystallography Reports - Macroscopic jumps of plastic deformation (few percent in amplitude) on creep curves of aluminum–magnesium alloy, caused by a local effect of concentrated solution of...  相似文献   

16.
I. Avramov 《Journal of Non》2011,357(22-23):3841-3846
The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts xi of all oxides dissolved in SiO2, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature Tr , at which viscosity is ηr = 1013 [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, li is a product of molar part xi and a specific dimensionless coefficient 0  ki  1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature Tr,SiO2 of pure SiO2.  相似文献   

17.
Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.  相似文献   

18.
19.
SAXS in situ experiments on the evolution of TMOS solutions during hydrolysis and polycondensation lead to power laws with scaling exponents ≈ 2. It is suggested that this could be the result of the polydispersity of the samples and that only an apparent fractal dimension can be obtained in this way. Kinetic studies tend to indicate that agglomeration in the sol is the result of a diffusion-controlled process.  相似文献   

20.
We investigate the possibility of controlling the curvature parameters of parabolic mirrors that are modular elements of two types consisting of a base and thin inserts placed at the opposite side of the work surface. In the first type of modular elements, bending is controlled by the difference in the coefficients of the thermal expansion of the base and inserts. In the second type of elements, the profile is changed by the piezoelectric straining of the inserts under an electric field. A correlation is established between the parameters of modular elements and their surface curvature profile.  相似文献   

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