Defect induced surface chemistry: A comparison of the adsorption and thermal decomposition of C2H4 on Rh{111} and Rh{331}

The adsorption and thermal decomposition of C₂H₂ on Rh{111} is compared to the atomically stepped Rh{331} surface over a temperature range of 300 to 800 K. Using X-ray photoelectron spectroscopy (XPS) we find that the C 1s spectra as a function of C₂H₄ exposure exhibit a shift in binding energy (E_b) from 283.5 eV at 1 L C₂H₄ exposure on both surfaces to 283.8 eV on Rh{33 and to 284.1 eV on Rh{111} at saturation coverage (4 L). Careful analysis of the C 1s E_b value and full width at half maximum as a function of surface temperature after a 10 L exposure of C₂H₄ at 300 K reveals that a species consistent with a C₂H adsorbate composition is formed between 400 and 450 K on Rh{111}. This species is also observed on Rh{331} although at the lower temperature of 375 K. Computer peak deconvolution of the C 1s spectra between 500 and 700 K suggests that a CH_ads or C_ads surface fragment is formed and increases in concentration at the expense of the C₂H species as the surface temperature increases. Above 750 K a graphite overlayer is formed on both surfaces. This overlayer, however, exhibits a low degree of carbon π-character bonding on Rh{331}. The adsorption and decomposition mechanisms suggest that the 300 K C₂H₄ adsorbate on Rh{331} is ethylidyne and that the stepped surface is more thermally reactive than the flat Rh{111} surface.     

Effects of oxygen flow rate on the properties of HfO2 layers grown by metalorganic molecular beam epitaxy

The investigations on the properties of HfO₂ dielectric layers grown by metalorganic molecular beam epitaxy were performed. Hafnium-tetra-tert-butoxide, Hf(C₄H₉O)₄ was used as a Hf precursor and pure oxygen was introduced to form an oxide layer. The grown film was characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), and capacitance–voltage (C–V) and current–voltage (I–V) analyses. As an experimental variable, the O₂ flow rate was changed from 2 to 8 sccm while the other experimental conditions were fixed. The XPS spectra of Hf 4f and O 1s shifted to the higher binding energy due to the charge transfer effect and the density of trapped charges in the interfacial layer was increased as the oxygen flow rate increased. The observed microstructure indicated the HfO₂ layer was polycrystalline, and the monoclinic phases are the dominant crystal structure. From the C–V analyses, k = 14–16 and EOT = 44–52 were obtained, and the current densities of (3.2–3.3) × 10⁻³ A/cm² were measured at −1.5 V gate voltage from the I–V analyses.     

Deposition of MgO films by pulsed mid-frequency magnetron sputtering

MgO films were deposited by pulsed mid-frequency magnetron sputtering from metallic targets in the mixture of Ar and O₂ gas. The surface morphology, crystalline structure, and optical properties were characterized by using atomic force microscopy (AFM), X-ray diffraction (XRD), and spectroscopic ellipsometry, respectively. The secondary electron emission coefficients of MgO films were measured by using a self-made apparatus in He gas. A pronounced hysteresis phenomenon of target voltage, current, and deposition rate with increasing and decreasing O₂ flow rate was observed. The structure of films deposited at a metallic mode changes from Mg phase to the mixed Mg and MgO phase, and the films have a very rough surface. All the films deposited at oxide mode have high transparency and smooth surface, and show (2 2 0) preferred orientation growth. The refractive index and extinction coefficient at a wavelength of 670 nm for MgO films deposited at oxide mode with a O₂ flow rate of 3 sccm are 1.698 and 1.16×10⁻⁴, respectively. The secondary emission coefficient at a E/p of 57.8 V/(cm Torr) for MgO films deposited at a O₂ flow rate of 3 sccm is 0.16, which is higher than that of MgO films deposited by e-beam evaporation.     

Electrical characterization of low temperature deposited TiO2 films on strained-SiGe layers

Thin films of titanium dioxide have been deposited on strained Si_0.82Ge_0.18 epitaxial layers using titanium tetrakis-isopropoxide [TTIP, Ti(O-i-C₃H₇)₄] and oxygen by microwave plasma enhanced chemical vapor deposition (PECVD). The films have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). Dielectric constant, equivalent oxide thickness (EOT), interface state density (D_it), fixed oxide charge density (Q_f/q) and flat-band voltage (V_FB) of as-deposited films were found to be 13.2, 40.6 Å, 6×10¹¹ eV⁻¹ cm⁻², 3.1×10¹¹ cm⁻² and −1.4 V, respectively. The capacitance–voltage (C–V), current–voltage (I–V) characteristics and charge trapping behavior of the films under constant current stressing exhibit an excellent interface quality and high dielectric reliability making the films suitable for microelectronic applications.     

Large-scale synthesis of polyynes with commercial laser marking technology

The space-confined synthesis method has been an efficient way for the preparation of linear carbon chains. However, the large-scale preparation of linear carbon chains still faces many challenges due to the lack of methods for the large-scale synthesis of precursors, such as short carbon chains (polyynes), and regulation technology for the transport of reactants in one-dimensional space. Here, we report a facile method for the rapid preparation of polyynes in large quantities using a commercial laser marking machine. Spectroscopic characterizations show that a large number of polyynes, such as C₈H₂, C₁₀H₂, C₁₂H₂, and C₁₄H₂, can be produced by ablating the graphite plate immersed in the organic liquid using a laser marking machine. The results of in situ Raman spectroscopy investigation of C_2nH₂-filled single-walled carbon nanotubes further confirm that a variety of polyyne molecules are synthesized. Meanwhile, in situ Raman spectroscopy also shows that the local heating treatment can accelerate the filling process of C_2nH₂ into one-dimensional channels. This work provides new insights into the study of linear carbon chains and space-confined synthesis methods.     

Substrate-induced freezing of alkane monolayers adsorbed on Au(1 1 1) dependant on the alkane/gold misfit

The molecular structure of the interfaces between pure C_nH_2n+2 (n=10, 12, 14, 16) and Au(1 1 1) surface has been studied by scanning tunneling microscopy. At 291 K, self-organized monolayers with a lamella structure are formed with these alkanes. The ordered monolayers are melting at temperature higher by 46, 28, 15, 5 K than the melting point of bulk C_nH_2n+2 crystals with n=10, 12, 14, 16, respectively. Two kinds of melting process were observed: (i) a direct solid/liquid phase transition within the monolayer for C₁₀H₂₂, C₁₂H₂₆ and C₁₄H₃₀ molecules, (ii) an intermediate phase for C₁₆H₃₄ molecules. This mesophase corresponds to a two-dimensional liquid crystal formed by molecules moving along their axis and along Au1 1 0. These results agree well with calculations using a geometric model taking in account the misfit between the CH₂–CH₂–CH₂ period along alkyl chain and the gold lattice along 1 1 0 direction.     

取代环戊二烯钛络合物光解活泼自由基的研究

本文用自旋捕捉技术与ESR相结合的方法,研究取代环戊二烯钛络合物(RC₅H₄)₂TiCl₂(R=H,CH₃,C₂H₅,C₃H₇,C₅H₁₁,C₆H₁₁)光解的活泼自由基。结果表明,光解初级过程是Ti-(RC₅H₄)π键均裂,以生成(RC₅H₄)^·和(RC₅H₄) TiCl₂。(RC₅H₄)^·可为ND捕捉,并生成两种自由基加合物,其浓度比约为1:1。     

Computer simulation of a carbon-deposition plasma in CH4

A transport and reaction model of a low-pressure, high-frequency (13.56 MHz) CH₄ plasma used for diamondlike carbon (a-C:H) deposition was developed. The model includes reactions among four molecular species (CH₄, C₂ H₆, C₂H₄, and H₂), five radicals and atom (CH₃, CH₂, CH, C₂H₅, and H), and four ions (CH₄⁺ , CH₃⁺, CH₅⁺, and C ₂H₅⁺). It also accounts for the influence of the sticking coefficient of species at the walls. Calculated values of the dissociation degree for several flow rates are in good agreement with experimental measurements made by quadrupole mass spectroscopy. A simple surface-model based on the hydrogen coverage of surface and ion flux and energy at the substrate surface was established. This model permitted the calculation of the deposition rate on the powered electrode as a function of the power applied to this electrode. Good agreement between experimental and calculated growth rates was obtained when CH₃, C₂H₅, and CH₂ were assumed to participate in film formation, and when hydrogen removal by ion bombardment with variable energy as a function of the power was included in the model     

Crystal structure and phase transitions of [(C2H5)4N]6Bi8Cl30

A new [(C₂H₅)₄N]₆Bi₈Cl₃₀ crystal of the family of alkylammonium halogenobismuthates was grown. X-ray diffraction studies showed that the crystals are monoclinic, space group C2/m with a = 20.117(5), b = 12.682(3), c = 20.396(5) Å, β = 93.03(3), Z =2. The lattice consists of (C₂H₅)₄N⁺ cations and a new type of Bi₈Cl⁶⁻₃₀ anion. Dielectric studies revealed two closely-lying structural phase transitions around 241 K (on cooling). They were interpreted as due to a freezing of the rotational motions of tetraethylammonium cations.     

取代环戊二烯锆、铪络合物光解活泼自由基的ESR研究

本文用自旋捕捉术技与ESR相结合的方法,研究取代环成二烯锆、铪络物(RC₅H₄)₂ZrCl₂(R=H,CH₃,C₃H₇,C₄H₉,C₅H₁₁,C₆H₁₁)及(RC₅H₄)₂HfCl₂(R=CH₃,C₂H₅,C₃H₇)光解的活泼自由基。结果表明,取代环成二烯锆、铪络合物与取代环戊二烯钛结合物光解机理相同,即光解初级过程是M-(RC₅H₄)(M=Ti,Zr,Hf)π键的均裂。其差别在于RCpMCl₂(M=Zr,Hf)可为PBN及ND捕获,并后者的加合物表现出氯核的分裂。     

Auger electron spectroscopy and electron energy loss spectroscopy studies on carbonization of Si(100) and (111) surfaces with ethylene

The reactions of Si(100) and Si(111) surfaces at 700 °C (973 K) with ethylene (C₂H₄) at a pressure of 1.3×10⁻⁴ Pa for various periods of time were studied by using Auger electron spectroscopy (AES) and electron energy loss spectroscopy (ELS). For a C₂H₄ exposure level, the amount of C on the (111) surface was larger than that on the (100) surface. The formation of β-SiC grain was deduced by comparing the C_KLL spectra from the sample subjected to various C₂H₄ exposure levels, and from β-SiC crystal.     

Molecular associations in binary mixtures of pyridine and chlorobenzene in benzene solution using microwave absorption data

The dielectric relaxation time (τ) of binary mixtures of different molar concentrations of pyridine (C₅H₅N) and chlorobenzene (C₆H₅Cl) in benzene solution at different temperatures (25, 30, 35 and 40 °C) has been calculated by using standard microwave techniques and Gopala Krishna's single frequency (9.875 GHz) concentration variation method. The energy parameters (ΔH_ε, ΔF_ε, and ΔS_ε) for the dielectric relaxation process of the binary mixture containing 0.5 mol fraction of pyridine have been calculated at the respective temperatures. Comparisons have been made with the corresponding energy parameters for the viscous flow (ΔH_η, ΔF_η, and ΔS_η). From the observations it is found that the dielectric relaxation process can be treated as the rate process. Based upon above studies, solute–solvent type of molecular associations arising from the interaction of chlorobenzene and benzene and pyridine and benzene molecules has been proposed. No solute–solute type of molecular association has been observed.     

Investigation of the role of oxygen in NO reduction by C2H4 on the surface of stepped Pt(3 3 2)

The influence of pre-dosed oxygen on NO–C₂H₄ interactions on the surface of stepped Pt(3 3 2) has been investigated using Fourier transform infrared reflection–absorption spectroscopy (FTIR-RAS) and thermal desorption spectroscopy (TDS). The presence of oxygen significantly suppresses the adsorption of NO on the steps of Pt(3 3 2), leading to a very specific adsorption state for NO molecules when oxygen–NO co-adlayers are annealed to 350 K (assigned as atop NO on step edges). An oxygen-exchange reaction also takes place between these two kinds of adsorbed molecules, but there appears to be no other chemical reaction, which can result in the formation of higher-valence NOx.

C₂H₄ molecules which are post-dosed at 250 K to adlayers consisting of ¹⁸O and NO do not have strong interactions with either the NO or the ¹⁸O atoms. In particular, interactions which may result in the formation of new surface species that are intermediates for N₂ production appear to be absent. However, C₂H₄ is oxidized to C¹⁸O₂ by ¹⁸O atoms at higher annealing temperature. This reaction scavenges surface ¹⁸O atoms quickly, and the adsorption of NO molecules on step sites is therefore quickly restored. As a consequence, NO dissociation on steps proceeds very effectively, giving rise to N₂ desorption which closely resembles that following only NO exposure on a clean Pt(3 3 2), both in peak intensity and desorption temperature. It is concluded that the presence of ¹⁸O₂ in the selective catalytic reduction (SCR) of NO with C₂H₄ on the surface of Pt(3 3 2) does not play a role of activating reactants.     

高气压直流辉光CH4/H2等离子体的气相过程诊断

对高气压(约100 Torr) 直流辉光碳氢等离子体的气相过程进行了光谱和质谱原位诊断. 在高气压下, 等离子体不同区域光发射特性存在明显差异. 正柱区存在着以C₂和CH为主的多个带状谱和分立谱线, 阳极区粒子发射谱线明显减少, 而在阴极区则出现大量复杂的光谱成分, 表明高气压情形下等离子体与阴极间强烈的相互作用将导致复杂的原子分子过程. 从低气压到高气压演变过程中, 电子激发温度降低而气体分子转动温度升高. 在高气压下, 高甲烷浓度导致C₂, C₂H₂及C₂H₄增多而C₂H₆减少. 表明在高气压条件下, 气体温度对气相过程的影响作用显著增强. 关键词： 高气压直流等离子体 光发射谱 质谱     

Mechanism and energetics of dimerization of SiH2 radicals on H-terminated Si(0 0 1)-(2×1) surfaces

The mechanism and energetics are presented of the dimerization of two adsorbed surface SiH₂ groups on the H-terminated Si(0 0 1)-(2 × 1) surface to form Si₂H₄ species during the initial stages of growth in plasma deposition of hydrogenated amorphous silicon (a-Si:H) films. The reactions are observed during classical molecular-dynamics (MD) simulations of a-Si:H film deposition from SiH₂ radical precursors impinging on an initially H-terminated Si(0 0 1)-(2 × 1) surface and substrate temperature, T, over the range 500T700 K. The Si₂H₄ species resulting from the surface SiH₂ dimerization reactions undergo surface conformational changes resulting in either a non-rotated (NRD) or a rotated dimer (RD) configuration. The RD configuration is found to be the energetically favorable one. The MD simulation results for the structure of the NRD and RD surface Si₂H₄ configurations corroborate with ab initio calculations of optimized adsorption configurations of SiH₂ radicals on crystalline Si surfaces, as well as results of STM imaging of the thermal decomposition of disilane on Si(0 0 1).     

Electrical conductivity, optical and metal–semiconductor contact properties of organic semiconductor based on MEH-PPV/fullerene blend

The electrical conductivity, optical and metal–semiconductor contact properties of the MEH-PPV:C₇₀ organic semiconductor have been investigated. The electrical conductivity results show that the MEH-PPV:C₇₀ film is an organic semiconductor. The optical band gap of the film was found to be 2.06 eV and the fundamental absorption edge in the film is formed by the direct allowed transitions. The refractive index dispersion curve of the film obeys the single oscillator model and E_d and E_o dispersion parameters were found to be 10.61 and 3.89 eV, respectively. The electrical characterization of the ITO/MEH-PPV:C₇₀ diode have been investigated by current–voltage characteristics. ITO/MEH-PPV:C₇₀ diode indicates a non-ideal current–voltage behavior with ideality factor n (2.50) and barrier height φ_B (0.90 eV) values.     

Decomposition mechanism of triethylindium (TEI) on a GaP(0 0 1)-(2×1) surface studied by LEED, AES, TPD and HREELS

Adsorption and decomposition of triethylindium (TEI: (C₂H₅)₃In) on a GaP(0 0 1)-(2×1) surface have been studied by low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), temperature-programmed desorption (TPD) and high-resolution electron energy loss spectroscopy (HREELS). It is found from the TPD result that ethyl radical and ethylene are evolved at about 300–400 and 450–550 K, respectively, as decomposition products of TEI on the surface. This result is quite different from that on the GaP(0 0 1)-(2×4) surface. The activation energy of desorption of ethyl radical is estimated to be about 93 kJ/mol. It is suggested that TEI is adsorbed molecularly on the surface at 100 K and that some of TEI molecules are dissociated into C₂H₅ to form P–C₂H₅ bonds at 300 K. The vibration modes related to ethyl group are decreased in intensity at about 300–400 and 450–550 K, which is consistent with the TPD result. The TEI molecules (including mono- and di-ethylindium) are not evolved from the surface. Based on the TPD and HREELS results, the decomposition mechanism of TEI on the GaP(0 0 1)-(2×1) surface is discussed and compared with that on the (2×4) surface.     

Deposition and characterization of carbon nitride films from hexamethylenetetramine/N2 by microwave plasma-enhanced chemical vapor deposition

Carbon nitride thin films were deposited on Si(1 0 0) substrate by microwave plasma-enhanced chemical vapor deposition (PECVD). Hexamethylenetetramine (HMTA) was used as carbon and nitrogen source while N₂ gas was used as both nitrogen source and carrier gas. The sp³-bonded C---N structure in HMTA was considered significantly in the precursor selection. X-ray diffraction analysis indicated that the film was a mixture of crystalline - and β-C₃N₄ as well as graphitic-C₃N₄ and β-Si₃N₄ which were not easily distinguished. Raman spectroscopy also suggested the existence of - and β-C₃N₄ in the films. X-ray photoelectron spectroscopy study indicated the presence of sp²- and sp³-bonded C---N structures in the films while sp³C---N bonding structure predominated to the sp² C---N bonding structure in the bulk composition of the films. N was also found to be bound to Si atoms in the films. The product was, therefore, described as CN_x:Si, where x depends on the film depth, with some evidences of crystalline C₃N₄ formation.     

光声光谱多组分气体分析仪的交叉干扰特性研究

设计了一套基于红外热辐射光源的光声光谱多组分气体分析仪。通过分析多组分气体间交叉干扰的主要因素以及特征气体的红外吸收谱线,确定了中红外带通滤光片的参数。利用标准气体对设计的光声光谱仪进行标定,研究了待测气体之间交叉干扰的定量关系,并利用湿度发生器对装置受到水气干扰情况进行分析。实验结果表明,C₂H₂对CH₄、CH₄对C₂H_6的干扰水平分别达到10.49μV/(μL/L)、18.66μV/(μL/L),其他烃类气体间的干扰可以忽略。CO₂对CO、CH₄、C₂H₂和C₂H₄干扰响应度分别为1.615μV/(μL/L)、0.055μV/(μL/L)、0.130μV/(μL/L)以及0.016μV/(μL/L)。此外,水气对C₂H₂、CH₄、C₂H_6、C₂H₄、CO和CO₂都会产生一定的干扰,干扰的响应度分别为0.591μV/(μL/L)、0.421μV/(μL/L)、0.071μV/(μL/L)、0.007μV/(μL/L)、0.051μV/(μL/L)和0.055μV/(μL/L)。实验结果表明C₂H₂对CH₄、CH₄对C₂H_6、CO₂对CO以及高浓度水气对其他气体的检测会产生较高水平的干扰,在测量过程中应当考虑扣除。     

Tunneling magnetoresistance of C2H2 molecules sandwiched between Co clusters

The tunneling magnetoresistance (TMR) of samples containing well-defined Co clusters (≈4.5 nm mean diameter) embedded in C₂H₂ matrices essentially is independent of Co-cluster volume fraction v_Co and reveals a value of about 26% at T=2 K. This result is in contrast to that obtained for Co clusters embedded in C₂H₄ matrices (Phys. Rev. B 67 (2003) 094433). In the latter system the TMR strongly decreased with increasing v_Co indicating different possible orientation of the C₂H₄ molecule sandwiched between the Co clusters. We, therefore, conclude that the C₂H₂ molecules are sandwiched in a rather well-defined orientation between the Co clusters. They probably form double layers of C₂H₂ molecules with the C–C bond axis parallel to the Co cluster surface.