LaAg x In1−x

The structures of LaAg _x In_1–x alloys withx=0.75, 0.89 are determined by neutron diffraction on powder samples. The space group isI4/mmm (D _4h ^/17 ). The lattice constants splitting, the order parameter and the mean square vibrational amplitudes of the atoms are given in the temperature range from 20 KT300 K.     

Negatron effects in CdSe1 − x Te x and ZnS1−x Se x films

Various negatron effects in films of alloys of II–VI compounds deposited from solutions as a function of the deposition mode and heat treatment are studied. It is found that the negative photocapacitance effect, which was first discovered in ZnS_1?x Se _x films, and the slowly relaxing negative photoelectric effects, which are caused by the transition of electrons located in a nanoscale surface layer from the shallow energy levels of trapping centers to deeper levels with a lower polarizability and by the presence of nanoscale clusters in these materials, which play the role of a “reservoir” for minority charge carriers, occur according to a single mechanism. A model to explain the basic laws of negative photoconductivity in CdSe_{1 ? x} Te _x films deposited from a solution is proposed. Negative residual conductivity is explained in terms of double-barrier relief model, while negative differential photoconductivity is attributed to the presence of nanoscale electric domains.     

利用x|x|控制混沌系统

提出了一种新的混沌控制方法，即对混沌动力系统增加一个具有分段二次函数x|x|形式的非线性反馈控制器，利用它控制了一大类系统从混沌运动转化为各种规则的运动.该控制器是一种活动控制器，它不影响原系统的参数，其结构相当简单而且在物理、电路上都容易实现.数值仿真表明了该控制方法的有效性与可行性. 关键词： 混沌 非线性反馈控制器 分段二次函数     

Formation of Ti1–x Si x and Ti1–x Si x N films by magnetron co-sputtering

The paper reports on surface morphology, structure and microhardness of TiSi–N films formed by cosputtering from two target-facing unbalanced magnetrons, equipped with pure Ti and Si targets, on an unheated substrate rotating in front of both targets. The ratio Si/Ti in the TiSi–N film was achieved by modifying the magnitude of currents in the individual magnetrons and by the addition of nitrogen to the film. The rotation of the substrate has a strong effect on the film deposition rate and its morphology. The deposition rate is 3 times lower than that of the film deposited on a stationary substrate. The surface roughness of a polycrystalline Ti film deposited on the rotating substrate is considerably higher than that on a stationary substrate. On the contrary, the surface of an amorphous Si film is smooth and there is no difference between the roughness of Si films sputtered on stationary and on rotating substrates. The hardness of the film increases with increasing Si content and with the addition of nitrogen to the TiSi film. The Ti(26 at.%)Si(8.5 at.%)N(65 at.%)-film sputtered on an unheated rotating steel substrate, held at a floating potential, exhibited the best result with a hardness of 29 GPa.     

Magnetism influenced by structural disorder in melt-spun DyMn6 − x Ge6 − x Fe x Al x (x = 2.5, 3)

Different chemical and/or geometrical orders were found in melt-spun DyMn_6???x Ge_6???x Fe _x Al _x with x = 2.5 and 3 having fully amorphous and mixed (crystalline and amorphous) structure, respectively. Thermal variations in magnetization M from liquid helium up to room temperature for both samples are similar. Magnetization value at zero field cooled curve reaches about 0.1 μ_B per formula unit at 2 K and then increases. Two maxima are visible, the first at 50 K (a sharp effect) and the second very broad ranging from 150 to 200 K. ⁵⁷Fe Mössbauer spectrometry investigation revealed a remaining magnetic component in addition to a prevailing quadrupolar feature. Application of a weak external magnetic field causes an increase in the mean hyperfine magnetic field B _hyp and the volume fraction of magnetic component. This observation was confirmed by results of M(T), M(H) and AC magnetic susceptibility measurements. In short-range ordered crystallographic zones characteristic of melt-spun DyMn_6???x Ge_6???x Fe _x Al _x (x = 2.5, 3) alloys, the related magnetic ordering, called the mictomagnetism or the cluster spin glass appears.     

The crystallization of Fe1−x P x , 0.09≦x≦0.26

The crystallization behaviour of about 60 samples of electrodeposited Fe_1–x P _x , 0.09<x<0.26, was investigated with DSC and X-ray diffraction. Several subsequenting transformations during heating at 10 K/min were identified. The corresponding transformation temperatures, reaction heats and reaction rates were measured. If the as-deposited samples contain metal-rich crystallites (microcrystalline and partly amorphous material) crystallization starts with primary precipitation of -iron followed by polymorphous crystallization of Fe₃P. In amorphous samples these two processes become less important compared with the eutectoid reaction the higher the phosphorus content. In a small concentration range around 19 at% P this transformation is the only one. Above this range the primary crystallization of Fe₃P becomes more and more dominant.     

x射线探测器

Crystal 公司已研制出家用 x 及 x 射线探测器,其能量范围从4keV 到1MeV。CXM 系列探测器是基于 CsJ:T 闪烁晶体与 Si-Pin 光电二极管的结合产物,以电流模式工作。前置放大器是集成的,1meV～12V 的输出信号等效于 dosis 功率,该系列可作为单独的探测器和具有10mm 系统构形的线性探测器阵列使用。     

High-temperature ferromagnetism in Si1 ? x Mn x (x ≈ 0.5) nonstoichiometric alloys

It has been found that the Curie temperature (T _C ?? 300 K) in nonstoichiometric Si_{1 ? x} Mn _x alloys slightly enriched in Mn (x ?? 0.52?C0.55) in comparison to the stoichiometric manganese monosilicide MnSi becomes about an order of magnitude higher than that in MnSi (T _C ?? 30 K). Deviations from stoichiometry lead to a drastic decrease in the density of charge carries (holes), whereas their mobility at about 100 K becomes an order of magnitude higher than the value characteristic of MnSi. The high-temperature ferromagnetism is ascribed to the formation of defects with the localized magnetic moments and by their indirect exchange interaction mediated by the paramagnetic fluctuations of the hole spin density. The existence of defects with the localized magnetic moments in Si_{1 ? x} Mn _x alloys with x ?? 0.52?C0.55 is supported by the results of numerical calculations performed within the framework of the local-density-functional approximation. The increase in the hole mobility in the nonstoichiometric material is attributed to the decay of the Kondo (or spin-polaron) resonances presumably existing in MnSi.     

ВЛИЯНИЕ СОДЕРЖАНИЯ К ИСЛОРОДА НА ЭЛЕКТРИЧЕСКИЕ И ТЕ РМОЭЛЕКТРИЧЕСКИЕ СВОЙСТВА ТРОЙНОЙ СИС ТЕМЫ Вi2Те3−x Sе x

, Bi₂Te_3–x Se _x . , , . , , . .

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Influence of oxygen content on electric and thermoelectric properties of ternary system Bi₂Te_3–x Se _x

A study is made of the influence of oxygen, contained in the semi-conducting system Bi₂Te_3–x Sé _x , on the electric and thermoelectric properties. It is shown that the addition of oxygen to the prepared samples Bi₂Te_2.4Se_0.6 causes a decrease in electric conductivity while the thermoelectric force remains unchanged. This influence is connected with a decrease in the mobility of the electrons but their concentration is not influenced by the presence of oxygen. Conclusions are reached as to the influence of oxygen on the efficiency of the conversion of thermal energy into electric energy and vice versa.

     

Specific heat of Eu x Sr1−x Te

In this paper, we report on measurements of the specific heatC of single-crystalline Eu _x Sr_1–x Te at temperatures between 60 mK and 15 K and in magnetic fields up to 6 T. Pure antiferromagnetic EuTe shows unusual critical behavior in the vicinity of the Néel temperatureT _N=9.8 K with a positive critical exponent instead of the 3d-Heisenberg exponent =–0.12. Possible reasons for this discrepancy between theory and experiment include magnetic anisotropy effects due to magnetic dipole-dipole interactions, which may give rise to a cross-over of the critical behavior very close toT _N. This anisotropy is also seen in the specific heat below 1 K where an exponential decay ofC is observed, and in the dependence of the magnetic susceptibility on the direction of the applied field. With increasing dilution of EuTe with nonmagnetic Sr, the critical behavior changes: becomes negative and decreases continuously towards –1 atxx _c. This concentration dependence of was previously observed in the diluted ferromagnetic system Eu _x Sr_1–x S. Our data thus support that the apparent change in the critical behavior depends on the degree of disorder. Samples with concentrationx lower than the critical concentrationx _c reveal spin-glass behavior in the specific heat. In addition, the dependence ofT _N on magnetic fields is discussed. The data yield a normalized magnetic phase boundaryB _c(T)/B_c(T=0) vs.T _N(B)/T_N(B=0) which is independent of concentration.     

Structure and dielectric properties of Bi6 − x Sr x Ti2 − x Nb2 + x O18 (x = 0–2) solid solutions

The structural and electrophysical characteristics of a series of solid solutions of layered perovs-kite-like oxides Bi_{6 ? x} Sr _x Ti_{2 ? x} Nb_{2 + x} O₁₈ (x = 0, 0.25, 0.5, 1.0, 1.5, 2.0) have been studied. The temperature dependences of the relative permittivity ?/?₀(T) and dielectric loss tangent tanδ have been measured. The dependences of the maximum of the permittivity ?/?₀, Curie temperature T _C, lattice parameters, and the unit cell volume on x have been obtained. The structural parameter a, which corresponds to the polar direction, and the value of the orthorhombic distortion of the unit cell have been found to demonstrate noticeable negative deviations from the Vegard’s law. It has been established that the variations of the orthorhombic distortion correlate with the variations of the permittivity maximum; however, they do not markedly influence the Curie temperature that varies linearly over entire range of changes in x.     

Cluster glass-like behavior of the diluted antiferromagnet Fe x Mg1−x TiO3 (x=0.2,x=0.3)

A diluted antiferromagnet Fe _x Mg_1–x TiO₃ has been shown to behave as a spin glass (x=0.2) and a reentrant spin glass (x=0.3) near the Fe percolation concentrationx 0.25. In order to obtain microscopic information on these samples, we performed Mössbauer measurements. At considerably higher temperatures than the transition temperatures, magnetically broadened spectra appear superimposed upon the paramagnetic doublets. A remarkable feature is that the intensity of the magnetic spectra increases accompanying the decrease of their linewidth. This behavior can be ascribed to the gradual slow-down of fluctuations of the antiferromagnetic clusters formed at high temperatures. To investigate the temperature variations of the relaxation time of the clusters, we analyzed the Mössbauer spectra using the method formulated by Blume. It has been shown that becomes long with decreasing temperature and the rate of the slow-down of is hastened aroundT _SG andT _N.     

Spin-wave resonance in [Co x Ni1 − x ]N and [Co x P1 − x ]N gradient films

Gradient films of ferromagnetic 3d metals with prescribed magnetic potential profile along the film thickness are obtained. It is found that the spin-wave resonance spectrum in these films is characterized by anomalous dependences of resonance fields of spin-wave modes H _r on the mode number: H _r(n) ～ n, H _r(n) ～ n ^2/3.     

Magnetotransport effects in paramagnetic Gd x Mn1 − x S

The electrical resistance of Gd _x Mn_{1 ? x} S solid solutions with x = 0.1, 0.15, and 0.2 has been measured at magnetic field H = 0.8 T and at zero magnetic field within the 100 K < T < 550 K temperature range. The magnetoresistance peak is observed above room temperature. On heating, the composition with x = 0.2 exhibits the change of magnetoresistance sign from positive to negative and the magnetoresistance peak near the transition to the magnetically ordered state. The experimental data are interpreted in the framework of the model involving the orbital ordering of electrons and the arising electrical polarization leading to the changes in the spectral density of states for electrons in the vicinity of the chemical potential in the applied magnetic field.     

Magnetic properties of amorphous Mn x B100−x alloys

Magnetic properties of amorphous Mn _x B_100–x alloys ranging fromx = 30 to 70 under high magnetic fields and low ac magnetic fields in the temperature range from 4.2 K to room temperature have been investigated. Samples which have Mn concentrations of aboutx = 40–60 show spin-glass-like properties in the low-temperature region. This spin-glass characteristics result from a frustration in the spin system which is caused by the competition of ferromagnetic and antiferromagnetic interactions between randomly distributed Mn atoms. Both magnetization at 4.2 K and paramagnetic momentP _eff as a function of Mn concentration show a peak aroundx 44 which drops rapidly towards both sides of the Mn content.     

Pb1−x Fe x films prepared by vapor condensation

ZF, LF and TF SR experiments with antiferromagnetic (AF) ceramical samples La_2–x Sr _x CuO_4–y have been performed in the temperature range 10–300 K. Zero field muon spin polarization functions obtained below the Neel temperature clearly show a nonzero initial precession phase-–0.35 rad. We propose an explanation based on existence of the dynamical magnetic fields on the muon.We thank Drs. A.G. Chistov and A.M. Brjazkalo from RSC Kurchatov Institute for the preparation the #2 La₂CuO_4–y sample.     

Lattice dynamics of ZnSe x S1 − x semiconductor crystals

Recently ultrabroadband infrared solid state lasers based on a new vibronic material Cr²⁺:ZnSe _x S_1–x were demonstrated [1–3]. Cr²⁺ ion substitutes the metal ion (tetrahedral sites), the crystal field of the solid solution is responsible for large inhomogeneous broadening of Cr²⁺ electron states. The crystal field can be reconstructed by investigation of lattice dynamics — optical phonon parameters and dielectric function in IR. We paid special attention to investigation of vibrational and infrared spectroscopic properties of ZnSe _x S_{1 ? x} crystals. A very interesting and somewhat unexpected result of these studies was the existence in the crystals of effective S-Se dipoles, which generate an additional deep dynamically charged level in the forbidden gap of the semiconductors. The results of the first-principles calculations of both the phonon structure and the electron localization in ZnSe _x S_1–x crystals as well as acceptor levels in Cr²⁺: ZnSe crystal are discussed.     

Critical behavior of single crystal CuCr2Se4−x Br x (x=0.25)

The doping of bromine has prominent effect on the transport properties of CuCr₂Se₄, where the conductivity of CuCr₂Se_4?x Br _x changes from metallic behavior with x=0 to semiconductor with x=1. In this work, the critical behavior of single crystal CuCr₂Se_4?x Br _x with x=0.25, which lies at the boundary between the metallic and insulating state, is investigated through the magnetization under high magnetic field. The critical exponents β=0.39±0.03 and γ=1.25±0.05 are obtained by the Kouvel–Fisher method, and δ=4.79±0.01 is generated by the critical iso-thermal analysis. The obtained exponent β is close to the prediction of the three-dimensional (3D) Heisenberg model, while γ approaches that of the 3D-Ising model. Although the bromine doping has prominent effect on the transport behavior, the critical exponents are hardly changed. The obtained results indicate that the ferromagnetism is established through one-dimensional Cr–Se–Cr bonds. However, the nearest-neighbor magnetic interaction belonging to the 3D-Heisenberg model also contributes to the ferromagnetic exchange.