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1.
X. P. Bai S. L. Ban 《The European Physical Journal B - Condensed Matter and Complex Systems》2007,58(1):31-36
A variational method and a memory function approach are
adopted to investigate the electron mobility parallel to the interface for a
model AlxGa1-xAs/GaAs heterojunction and its pressure effect by
considering optical phonon modes (including both of the bulk longitudinal
optical (LO) in the channel side and interface optical (IO) phonons). The
influence of a realistic interface heterojunction potential with a finite
barrier and conduction band bending are taken into account. The properties
of electron mobility versus Al concentration, electronic density and
pressure are given and discussed, respectively. The results show that the
electron mobility increases with Al concentration and electronic density,
whereas decreases with pressure from 0 to 40 kbar obviously. The Al
concentration dependent and the electron density dependent contributions to
the electron mobility from the scattering of IO phonons under pressure
becomes more obvious. The variation of electron mobility with the Al
concentration and electron density are dominated by the properties of IO and
LO phonons, respectively. The effect of IO phonon modes can not be neglected
especially for higher pressure and electronic density. 相似文献
2.
Zeng-Ru Zhao 《Physica B: Condensed Matter》2009,404(16):2359-2363
The variational method and the effective mass approximation are applied to calculate the binding energies of the hydrogenic impurity states in a cylindrical quantum wire with finite deep potential well. The phonon effects on the impurity states are considered by taking both the couplings of the electron-phonon and the impurity ion-phonon into account. The numerical results for the GaAs cylindrical quantum wire are given and discussed. It is found that the ion-phonon interaction reduces the impurity binding energy and supplies key contribution to the energy shift, but the electron-phonon coupling enhances the binding energy less. Longitudinal optical (LO) phonons play more important role than interface optical (IO) phonons in the impurity potential screening. The polaron effect caused by LO phonons is more important when the wire is thinner, otherwise the LO phonons are dominant for the thicker wires. 相似文献
3.
Interface polarons in a realistic heterojunction potential 总被引:9,自引:0,他引:9
S.L. Ban J.E. Hasbun 《The European Physical Journal B - Condensed Matter and Complex Systems》1999,8(3):453-461
The ground states of interface polarons in a realistic heterojunction potential are investigated by considering the bulk and
the interface optical phonon influence. A self-consistent heterojunction potential is used and an LLP-like method is adopted
to obtain the polaron effect. The numerical computation has been done for the Zn1-xCdxSe/ZnSe system to obtain the polaron ground state energy, self energy and effective mass parallel to the interface. A simplified
coherent potential approximation is developed to obtain the parameters of the ternary mixed crystal and the energy band offset
of the heterojunction. It is found that at small Cd concentration the bulk longitudinal optical phonons give the main contribution
for lower areal electron densities, whereas the interface phonon contribution is dominant for higher areal electron densities.
The interface polaron effect is weaker than the effect obtained by the three dimensional bulk phonon and by the two dimensional
interface phonon models.
Received 17 September 1998 相似文献
4.
X. L. Yu S. L. Ban 《The European Physical Journal B - Condensed Matter and Complex Systems》2006,52(4):483-491
The Larsen perturbation method is adopted to study the
influence of magnetic fields on polarons in realistic heterojunctions in a
quasi-two-dimension approximation. The interaction between an electron and
both the bulk longitudinal optical phonons and the two branches of interface
optical phonons is taken into account to show the influence of magnetic
fields at different ranges on the polaron cyclotron mass due to the coupling
of the electron with each branch of phonon modes. The result indicates that
not only do the bulk phonons influence the polaron cyclotron mass, but the
interface phonons do as well. The pressure effect on the cyclotron mass is
also discussed. 相似文献
5.
The potential induced by the electron-optical-phonon interaction in a quantum well (QW) is investigated by means of the perturbation
theory. We consider the interactions of an electron with both bulklike confined longitudinal optical (LO) phonons and four
branches of interface optical (IO) phonons. The spatial distributionV
i(z) of the induced potential for QW structures with different heterolayer compositions and different well widths is calculated
in detail. The numerical results show that the heterolayer composition of the QW plays an important role in determining the
shape ofV
i(z) and that the existence of IO-phonons is important to the electronic states in QWs. 相似文献
6.
7.
The potential induced by the electron-optical-phonon interaction in a quantum well (QW) is investigated by means of the perturbation theory. We consider the interactions of an electron with both bulklike confined longitudinal optical (LO) phonons and four branches of interface optical (IO) phonons. The spatial distributionV i(z) of the induced potential for QW structures with different heterolayer compositions and different well widths is calculated in detail. The numerical results show that the heterolayer composition of the QW plays an important role in determining the shape ofV i(z) and that the existence of IO-phonons is important to the electronic states in QWs. 相似文献
8.
The interaction between exciton and confined longitudinal optical (LO) phonons, interface optical (IO) phonons in an asymmetric Ga 1 x Al x As/GaAs/Ga 0.7 Al 0.3 As square quantum well is investigated. By applying the LLP-like transformation and variational approach, the numerical results are obtained as functions of the well width and asymmetric-degree of well. The exciton-optical phonons interaction-energy has a minimum value with the increase of the well width. It is demonstrated that the LO-phonon energ... 相似文献
9.
The present work deals with an electron interacting strongly with both bulk longitudinal optical (LO) phonons and interface (IF) optical phonons in which we adopt and generalize the Tokuda's variational method for studying the interface polaron properties in polar crystals at zero temperature, In our approach, we can reduce the Hamiltollian equation of the system to a pair of integro-differential equations in two variational parameters of the electron wavefunction from which we can calculate various physical properties of an interface polaron including the ground state energy, average numbers of interacting phonons, the average distance from the interface and the anisotropic effective masses of the interface polaron. Numerical results are obtained explicitly for LiF crystal interfaced with NaF crystal as well as other similar systems with varying physical constants, which show the typical trends of variations for the effects of strong electron-phonon interactions on different physical properties of an interface polaron. 相似文献
10.
We report the electron resonant Raman scattering (ERRS) process related to the longitudinal optical (LO), interface optical (IO) and quasi-confined (QC) phonons in a cylindrical GaN-AlN quantum well wire (QWW). We present the differential cross-section (DCS) and study the selection rules. Results reveal that the emitted photon frequency decreases with increasing the radius because of the size-selective Raman scattering effect and the built-in electric field. The contribution to the DCS mainly stems from the GaN-type LO (LO1), QC and IO phonons when the wire is thin, but the LO1 and QC phonons are dominant for the thick wire. 相似文献
11.
Wenfang Xie 《Physica B: Condensed Matter》2011,406(14):2858-2861
We have studied the optical absorption of an exciton and its refractive index in a disc-like quantum dot, taking into account of the confined longitudinal optical (LO) phonons. Calculations are performed in the framework of the effective-mass approximation using the compact density-matrix approach. With typical semiconducting GaAs materials, the linear, third-order nonlinear, total optical absorption coefficients and refractive index changes with and without considering the exciton-phonon interaction have been examined. By comparing the polaron effect of the two-electron quantum dot, it is found that the corrections due to the LO phonons on the optical absorption and refractive index are very important and cannot be ignored. 相似文献
12.
采用Huybrechts线性组合算符和Lee-Low-Pines变换法研究了温度和极化子效应对量子阱中激子与界面光学声子强耦合又与体纵光学声子弱耦合体系基态的影响,推导出激子基态的诱生势和基态能量的移动的表达式. 以AgCl/AgBr量子阱为例进行了数值计算,结果表明,由激子-界面光学声子强耦合所产生的激子基态的诱生势和基态能量的移动随温度的升高而增大,而由激子-体纵光学声子弱耦合所产生的激子基态的诱生势和基态能量的移动随温度的升高而减小.
关键词:
量子阱
强耦合激子
极化子效应
温度依赖性 相似文献
13.
Under dielectric continuum approximation, interface optical (IO) and surface optical (SO) phonon modes as well as the corresponding Fro^ehlich electron-phonon interaction Hamiltonian in a free-standing cylindrical quantum-well wire (QWW) are derived and studied. Numerical calculations on GaAs/AlzGa1-x As cylindrical QWW are performed. Results reveal that there are two branches of IO phonon modes and one branch of SO phonon mode, and the dispersion frequencies of IO or SO phonon modes sensitively depend on the Al mole fraction x in AlzGa1-x As material and the wavevector in z direction, kz. With the increasing of kz and quantum number m, the frequency of each IO mode approaches one of the two frequency values of the single GaAs/AlxGa1-x As heterostructure, and the electrostatic potential distribution of the phonon mode tends to be more and more localized at a certain interface or surface, meanwhile, the coupling between the electron-IO and -SO phonons becomes weaker. 相似文献
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15.
16.
The effects of electron-phonon interaction on energy levels of a polaron in a wurtzite nitride finite parabolic quantum well (PQW) are studied by using a modified Lee-Low-Pines variational method. The ground state, first excited state, and transition energy of the polaron in the GaN/Al0.3Ga0.7N wurtzite PQW are calculated by taking account of the influence of confined LO(TO)-like phonon modes and the half-spaee LO(TO)-like phonon modes and considering the anisotropy of all kinds of phonon modes. The numerical results are given and discussed. The results show that the electron-phonon interaction strongly affects the energy levels of the polaron, and the contributions from phonons to the energy of a polaron in a wurtzite nitride PQW are greater than that in an A1GaAs PQW. This indicates that ehe electron-phonon interaction in a wurtzite nitride PQW is not negligible. 相似文献
17.
近年来国内外对多原子极性晶体中磁极化子性质的研究十分活跃,Zorkani等采用变分法计算了束缚磁极化子的基态能量,Kandemir等采用束缚朗道态讨论了二维大磁极化子的基态和第一激发态能量,国内一些学者采用微扰法和新颖算符法讨论了多原子极性晶体中表面和体磁极化子的性质。采用线性组合算符和幺正变换,研究磁场中多原子半无限极性晶体中电子和光学声子弱耦合相互作用所产生的极化子的第一激发态能量及平均声子数。结果表明:当电子无限接近晶体表面时,磁极化子的基态能量仅为Landau能量;第一激发态能量为Landau基态能量的2倍;平均声子数等于各支与电子耦合的体光学声子数和表面光学声子数之和。而当电子处于晶体深处时,磁极化子的基态能量却为Landau基态能量与各支体光学声子以及表面光学声子分别耦合的能量之和;第一激发态能量仍为Landau基态能量的2倍;平均声子数等于各支与电子耦合的体光学声子数和与所处深度有关的各支体光学声子数之和,而与各支表面光学声子无关。 相似文献
18.
This paper presents a study of the cyclotron resonance of the interface polarons in a semiinfinite polar crystal. In the resonant magnetic field region the Landau-level corrections due to the resonant coupling of the electron with the bulk longitudinal-optical (LO) phonon and the surface optical (SO) phonon are calculated. At resonance the n-th Landau level (n > 0) splits into a triplet. The cyclotron-resonance mass of the electron is evaluated for an arbitrary magnetic-field strength. For the interface system the magneto-optical anomalies display three branches of the cyclotron-resonance mass spectra. The numerical results show that in the interface system the polaron effect is weakened with respect to the ideal twodimensional system. It is found that in the very weak magnetic fields the polaron effect is contributed mainly by the SO phonons, whereas in the large magnetic fields the LO-phonon contribution to the polaron.effect becomes predominant. 相似文献
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20.
The polaron self-energy and the correction to the electron effective mass in a cylindrical quantum well wire (QWW) are studied by the perturbation approach. The interactions of electrons with different phonon modes in the QWW system, including the confined longitudinal optical phonon modes, in the wire (LO1), in the barrier materials (LO2) and in the interface optical (IO) phonon modes, are considered. The result shows that the LO1 phonon’s contribution to the polaron self-energy increases gradually as the radius of the wire increases, and finally reaches that of the three-dimensional limit, while the LO2 phonon contributes only when the radius of the wire is very small. Also, the contribution of the IO phonon modes first increases quickly as the wire radius increases and soon reaches a maximum, then reduces to zero monotonically. 相似文献