Laser-diode pumped self-Q-switched microchip lasers

Optical properties of Cr,Yb:YAG, Cr,Nd:YAG crystals, and composite Yb:YAG/Cr:YAG ceramics self-Q-switched solid-state laser materials are presented. The merits of these self-Q-switched laser materials are given and the potentials of such lasers can be chosen by the applications. Cr,Yb:YAG and composite Yb:YAG/Cr:YAG ceramics self-Q-switched laser are conducted. Although several tens of kW peak power can be obtained with a monolithic microchip Cr,Yb:YAG laser, the experimental results show that the performance of this laser is limited by the absorption of Cr⁴⁺ ions at a pump wavelength of 940 nm and strong fluorescence quenching at high Cr concentration. Composite Yb:YAG/Cr:YAG ceramics are more suitable to realize high pulse energy and peak power (up to MW level) with optimized lasing and Q-switching parts. In addition, the instabilities induced by the multi-longitudinal mode competition in Cr,Nd:YAG and Cr,Yb:YAG microchip lasers are addressed. The different gain bandwidths of Yb:YAG and Nd:YAG play an important role in the instability of the output laser pulse trains. Stable laser pulses from the Cr,Yb:YAG microchip laser were obtained due to the antiphase dynamics. For the Cr,Nd:YAG microchip laser, the instability caused by the multi-longitudinal mode competition is an intrinsic property. Different transverse patterns were observed in Cr,Nd:YAG microchip lasers when a pump beam with larger diameter was used. Saturated inversion population distribution inside the gain medium plays an important role in the transverse pattern formation. Different transverse patterns were reconstructed by combining different sets of the Hermite-Gaussian modes.     

Numerical solution and experiment of a self-Q-switched 946 nm Cr,Nd:YAG laser

A LD-pumped self-Q-switched 946 nm laser by using a co-doped Cr,Nd:YAG crystal as a gain medium as well as a saturable absorber is studied. The 946 nm self-Q-switched rate equations of co-doped crystal are solved numerically by Runge–Kutta method directly. The important parameters of lasers, such as average output power, threshold pump power, pulse width, pulses repetition rate, and optimal transmission of output coupler are obtained numerically. Experimentally, the maximum average output power up to 2.61 W, corresponding to a slope efficiency of 23.43%, was obtained in a simple and compact linear cavity. The optical-to-optical efficiency is 17.3% and the peak power is 7.57 kW with repetition rate of 23.78 kHz and pulse width of 14.5 ns. In the experiments, a high-quality fundamental transverse mode can be preserved in a large range of incident pump power. The numerical results of the 946 nm self-Q-switched Cr,Nd:YAG laser are in good agreement with the experimental results.     

Optimization of Yb:YAG/Cr<Superscript>4+</Superscript>:YAG composite ceramics passively Q-switched microchip lasers

The laser characteristics of laser-diode end-pumped Yb:YAG/Cr⁴⁺:YAG composite ceramics microchip passively Q-switched lasers were studied by solving the coupled rate equations numerically taking into account the reabsorption of Yb:YAG ceramics at laser wavelength. Effects of the reflectivity of the output coupler, the concentrations and thickness of the saturable absorbers, and pump beam area on the laser performance were investigated analytically. The simulation results of the Yb:YAG/Cr⁴⁺:YAG composite ceramics passively Q-switched microchip lasers were in good agreement with the experimental data. Better laser performance (high peak power, short pulse width and good optical-to-optical efficiency) of the composite Yb:YAG/Cr⁴⁺:YAG ceramics passively Q-switched laser can be obtained by using a thin Cr⁴⁺:YAG ceramic with high concentration, suitable reflectivity of the output coupler and proper pump beam diameter under high pump power intensity according to our simulations.     

Direct numerical simulation of quasi-three-level passive Q-switched laser

The Runge-Kutta method is used to solve numerically the rate equations of quasi-three-level passive Q-switched laser directly without any approximate treatment of these differential equations. The 946 nm self-Q-switched Cr,Nd:YAG laser is chosen for example to describe the details. The time-dependence of intra-cavity photon density is obtained and its detailed real-time changing process is reproduced in numerical solution. The curves of laser output parameters such as average output power, pulse width, repetition rate, pulse energy and peak power changing with different cavity conditions such as pump power, output coupler reflectivity, Cr,Nd:YAG crystal length, Nd³⁺ ion and Cr⁴⁺ ion concentrations are simulated according to direct numerical solution rather than analytical expressions. This direct numerical simulation method can be widely used to describe and optimize the quasi-three-level passive Q-switched laser theoretically.     

Cr,Nd:YAG self-Q-switched laser with high efficiency output

The high efficient laser performance of self-Q-switched laser in the co-doped Cr⁴⁺,Nd³⁺:YAG microchip with 1.8 mm thickness was demonstrated. The slope efficiency is varied with the reflectivity of output coupler at 1064 nm, and the highest slope efficiency of 26% was obtained for 95% reflectivity of output coupler at 1064 nm. The pulse width, the single pulse energy and the pulse repetition rate for different reflectivity of the output couplers were measured, and the experimental results agree with the numerical calculations of the passively Q-switched rate equations. This can lead to develop the diode laser pumped monolithic self-Q-switched solid-state microchip lasers, especially for the intracavity frequency-doubled solid-state microchip lasers.     

Laser performance of monolithic Cr,Nd:YAG self-Q-switched laser

The self-Q-switched laser performance of monolithic Cr⁴⁺,Nd³⁺:YAG concave-planar resonator with 5-mm length was studied experimentally and theoretically. The slope efficiency is as high as 24% and pump threshold is as low as 64 mW. The pulse width, the single pulse energy and the pulse repetition rate of monolithic Cr,Nd:YAG self-Q-switched laser were measured as a function of absorbed pump power. With the increase of pump power, the pulse width decreases and the pulse energy and the pulse repetition rate increase. The average output power of 91 mW with pulse width of 7 ns at repletion rate of 35.5 kHz was obtained at the maximum absorbed pump power of 440 mW, the peak power is as high as 370 W. The theoretical prediction of pulse energy, pulse width and pulse repetition rate as a function of absorbed pump power based on rate equations is in a good agreement with our experimental data. This can lead to develop the diode laser-pumped monolithic self-Q-switched solid-state microchip lasers.     

Electron impact single and double ionization of argon

Stable two-mode, and three-mode oscillations due to the spatial hole burning effect were observed experimentally with the increase of the pump power ratio in a laser-diode pumped sub-nanosecond microchip Cr,Yb:YAG self-Q-switched multimode laser. The stability of the output pulse trains was attributed to the mode coupling through antiphase dynamics between different modes. Modified multimode rate equations including the spatial hole-burning effect in the active medium and the non-linear absorption of the saturable absorber were proposed. Numerical simulations of the antiphase dynamics of such a laser were in good agreement with the experimental data, and the antiphase dynamics were explained by the evolution of the inversion population and the bleaching and recovery of the inversion population of the saturable absorber.     

Laser-diode-pumped Cr(4)+, Nd(3)+:YAG with self-Q-switched laser output of 1.4 W

By use of a laser diode as a pump source, a self-Q-switched laser from a Cr, Nd:YAG crystal is demonstrated. The output Q-switched traces are very stable, the threshold pump power is 3.5 W, the pulse duration is 50 ns, and the slope efficiency is as high as 20%. In addition, the pulse width remains constant while the pulse repetition rate varies with pump power.     

Laser-diode-pumped Passively Q-switched Nd:Sr5(PO4)3F Green Laser

By using a laser-diode as pump source, a Cr4+ :YAG crystal as saturable absorber for passive Q-switch and a KTP as intracavity frequency doubling crystal, we have realized the green Q-switched laser output at 0.5295 μm from a Nd: S-FAP crystal. Output green laser characteristics, such as average power, single pulse energy, pulse width, repetition rate for different small-signal transmission of Cr4+ :YAG and different pump power, were measured. Meanwhile, the coupling rate equations of intracavity frequency doubling with Cr4+ :YAG as passive Q-switch were given and the numerical solution of equations agreed with the experimental results.     

Laser-diode-pumped Passively Q-switched Nd:Sr5(PO4)3F Green Laser

By using a laser-diode as pump source, a Cr4+ :YAG crystal as saturable absorber for passive Q-switch and a KTP as intracavity frequency doubling crystal, we have realized the green Q-switched laser output at 0.5295 μm from a Nd: S-FAP crystal. Output green laser characteristics, such as average power, single pulse energy, pulse width, repetition rate for different small-signal transmission of Cr4+ :YAG and different pump power, were measured. Meanwhile, the coupling rate equations of intracavity frequency doubling with Cr4+ :YAG as passive Q-switch were given and the numerical solution of equations agreed with the experimental results.     

Numerical simulation of a CW-pumped Cr:YAG passively Q-switched Yb:YAG pulsed laser

A general model of a CW-pumped passively Q-switched laser is presented which considers the pump power and excitation state of the absorber. The recovery time of the absorber is affected by the Q-switched laser pulse length and repetition rate, which results in changes of the output power, peak power and pulse duration of a CW-pumped passively Q-switched solid-state laser. At low pump power, the final inversion population density alters slowly by a small amount and the effect of the absorber's finite recovery time on laser output energy can be ignored. At high pump power, the final inversion population density increases quickly with pump power increase and the output energy decreases greatly. Simulation results of a CW-pumped, Cr:YAG Q-switched, Yb:YAG laser are reported. The numerical simulation results agree with the theoretical analytical analysis.     

氟磷酸锶晶体Cr4+:YAG被动调Q激光特性研究

采用氙灯泵浦,实现了掺钕氟磷酸锶晶体以Ｃｒ＾４＋：ＹＡＧ作为被动调Ｑ元件的１．０５９μｍ激光运转,测量了Ｃｒ＾４＋：ＹＡＧ 同小爱过率及不同泵浦能量上激光单脉冲的输出能量、脉冲宽度、重复率,给出了Ｎｄ：Ｓ－ＦＡＰ晶体Ｃｒ＾４＋：ＹＡＧ调Ｑ工作原理的方程组,数值求解该方程组得的理论结果与实验值相符。     

Efficient passively Q-switched laser operation of Yb in the disordered NaGd(WO4)2 crystal host

Efficient passively Q-switched laser operation of the disordered Yb:NaGd(WO(4))(2) crystal is demonstrated for the first time to our knowledge with a Cr(4+):YAG saturable absorber by diode end pumping. 2.05 W of average output power at a pulse repetition frequency of 13.3 kHz was obtained at an absorbed pump power of 7.7 W, with a slope efficiency of 40%. The energy and duration of the generated laser pulse were 154 microJ and 33 ns, respectively, corresponding to a peak power of 4.67 kW. In continuous-wave operation, the Yb:NaGd(WO(4))(2) laser yielded an output power of 5.5 W with an optical-optical efficiency of 51%.     

二极管泵浦双掺杂YAG微片自调Q激光器

 利用激光二极管泵浦双掺杂YAG微片晶体，在连续泵浦时获得了重复频率为2.78kHz，脉冲宽度为6ns的自调Q激光输出。并通过预泵浦加脉冲调制电流的方法，实现可控重复率的自调Q脉冲输出。与外腔式自调Q微片激光器相比，这种一体化微片激光器具有更高的转换效率、更窄的输出脉冲宽度和更高的重复频率，同时结构更为简单紧凑，易于调整。     

Nd:Sr5(VO5)3F Q-Switched Lasers with Cr4+:YAG

The Cr4+-doped saturable absorber Cr4+:YAG is used as the passive Q-switch for a conventional pulsed Nd:Sr5(VO5)3F(Nd:S-VAP) oscillator, and the short high-peak-power pulses of laser have been obtained. The laser output characteristics are investigated under the conditions of different small-signal transmittance of Cr4+:YAG and different reflectivity of the output coupler. The rate equtions of Q-switched coupling wave are given, and the numerical solutions of equations are in agreement with the experimental results.     

Self-Q-switched and mode-locked 946 nm Cr,Nd:YAG laser

A simultaneous self-Q-switched and mode-locked diode-pumped 946 nm laser by using a Cr,Nd:YAG crystal as gain medium as well as saturable absorber is demonstrated for the first time as we know. The maximum average output power of 751 mW with a slope efficiency of 18.38% is obtained at an intra-cavity average peak power intensity of 4.83 × 10⁶ W/cm². Under this circumstance, the repetition rate of Q-switched envelopes is 9.63 kHz and the pulse width is about 460 ns. Almost 100% mode-locked modulation depth is obtained at all time in the experiment process whether the incident pump power is low or high. The repetition rate of mode-locked pulses within a Q-switched envelope is 135.13 MHz and the mode-locked pulse width is within 600 ps. The laser produces high-quality pulses in TEM₀₀-mode in the simultaneous self-Q-switched and mode-locked experiment.     

Diode-pumped self-Q-switched Cr,Nd:YAG laser with 7-W average output power

We report a diode-pumped self-Q-switched 1064-nm Cr,Nd：YAG of 16-18 ns. The maximum average output power up to 7 W, 3370, is obtained in a simple and compact linear cavity by using transmittance of 1570. The laser operates at TEM00 mode with a laser with pulse duration in the range corresponding to a slope efficiency of a plane-concave output coupler with a pump power of 14.2 W.     

A passively Q-switched diode pumped Yb:YAG microchip laser

A passively Q-switched diode pumped Yb:YAG microchip laser with Cr4+:YAG saturable absorber mirror is reported. The TEMoo laser pulses are obtained with 1,7-uJ pulse energy, 15-ns pulse width, 0.11-kW peak power, and a repetition rate of 2.2 kHz at 1049 nm. The doped concentration and dimension of Yb:YAG microchip crystal are 10 at.-% and 5×0.6 mm2, respectively.     

自调Q、自锁模铒/镱共掺光纤激光器

研究了结构新颖的环形腔铒/镱（Er/Yb）共掺双包层光纤激光器.为了获得高功率激光输出，使用6个激光二极管（LD）同时抽运Er/Yb共掺光纤，采用光纤光栅（FBG）Sagnac环作为波长选择器，得到了中心波长为1548.11 nm、谱线宽度为0.06 nm的窄线宽激光输出；并利用增益光纤作为可饱和吸收体，实现了自调Q、自锁模脉冲输出.当抽运功率为719 mW时，激光器输出自调Q脉冲，脉冲周期为20μs，脉冲宽度为2.8μs，脉冲的平均功率为38.4mW，峰值功率为274.3mW；当抽运功率为3.6 W时，激光器输出自锁模脉冲，脉冲宽度为4ns，平均功率为319 mW，脉冲峰值功率大于10 W，重复频率为7.937 MHz.     

Nd,Cr:YAG自调Q自锁模激光器的研究

实验采用光纤耦合激光二极管泵浦,得到了二极管泵浦Nd,CrYAG自调Q自锁模1.064 μm激光输出,其锁模调制深度达到了近100%,其输出功率最高可达1.9 W,平均输出功率稳定性优于1%.实验表明平均输出功率、重复频率和脉冲宽度随泵浦功率增加而上升.