表面杂质诱导薄膜元件的热应力损伤EI北大核心CSCD

基于薄膜元件的热力学理论,建立了强激光连续辐照下薄膜元件的热分析模型,模拟了薄膜元件表面杂质吸热后向周围薄膜进行热传递的过程,并讨论了表面洁净度等级和杂质尺寸对薄膜元件热应力损伤的影响。研究结果表明:强激光连续辐照下,表面杂质会吸收激光能量产生较大的温升,激光辐照时间越长,功率密度越大,杂质的温升也越大;吸热后,达到熔点的杂质和未达到熔点的杂质分别通过热传导和热辐射的方式向周围薄膜传递热量,通过热传导作用在薄膜元件表面引起的温升明显高于热辐射作用引起的;杂质向周围薄膜传递热量后会在薄膜元件上产生非均匀的温度梯度,进而产生热应力,热应力随着温度梯度的增加而增大,且处于一定尺寸范围内的杂质,更容易诱导薄膜元件热应力损伤;此外,薄膜元件的表面洁净度等级越高,杂质粒子的数目越多,越易于造成薄膜元件的热应力损伤。     

接触热阻对水冷辉光放电电极温度分布影响的数值模拟

为了研究接触热阻对陶瓷绝缘水冷辉光放电电极温度及其分布的影响，利用计算流体动力学软件ANSYSCFX，模拟了电极表面温度、温差随氮化铝陶瓷与两侧铜导体之间接触热阻的变化。模拟结果表明：随着接触热阻的增大，氮化铝陶瓷与铜接触界面的温度跳变幅度增大，辉光放电电极整体温度上升，并且辉光放电电极表面的最高温度和最大温差均随之呈现指数上升的变化趋势。     

表面杂质诱导薄膜元件的热应力损伤

基于薄膜元件的热力学理论,建立了强激光连续辐照下薄膜元件的热分析模型,模拟了薄膜元件表面杂质吸热后向周围薄膜进行热传递的过程,并讨论了表面洁净度等级和杂质尺寸对薄膜元件热应力损伤的影响。研究结果表明:强激光连续辐照下,表面杂质会吸收激光能量产生较大的温升,激光辐照时间越长,功率密度越大,杂质的温升也越大;吸热后,达到熔点的杂质和未达到熔点的杂质分别通过热传导和热辐射的方式向周围薄膜传递热量,通过热传导作用在薄膜元件表面引起的温升明显高于热辐射作用引起的;杂质向周围薄膜传递热量后会在薄膜元件上产生非均匀的温度梯度,进而产生热应力,热应力随着温度梯度的增加而增大,且处于一定尺寸范围内的杂质,更容易诱导薄膜元件热应力损伤;此外,薄膜元件的表面洁净度等级越高,杂质粒子的数目越多,越易于造成薄膜元件的热应力损伤。     

肾器官冷灌注过程中的热结构耦合模拟

生物组织在快速降温时,其内部温度梯度与热应力相关性的探索研究使人饶有兴趣。本文基于Ansys wvorkbench平台,对猪肾脏在冷灌注过程中,温度场与热应力场的耦合作用进行了探索性研究。重点探讨了肾脏快速降温时,因温度梯度所导致的生物热应力是否对细胞组织产生影响。研究结果表明:热变形沿血管形状呈现出梯度变化,靠近血管的热变形小于肾脏外缘;变形最大点在靠近肾脏表面两端的位置;温降速率是影响肾脏组织热应力和热形变的主要因素。研究方法以及结论对移植器官的冰温延时安全保存具有重要指导意义。     

基于光子发射的电火花加工电极能量分布研究

为了研究电火仡加工过程的机理,基于光子发射计算了阴极、阳极的能量分布.首先得到了放电通道中的正离子及电子的物质波长,发现正离子主要以振动的形式运动在放电通道中向外辐射光子,而电子主要以衍射的形式运动在阳极表面向外辐射光子.通过假设光子以等概率的形式辐射,计算了阴极、阳极表面获得的热流密度、热流量以及平均热流密度的方程,重新解释了小脉宽电流加上的明显极性效应,以及大脉宽条件下的不明显极性效应.最后,阐述了这一原理对电火花微细加工精加上以及粗加工的影响,说明小脉宽电流应该用正极性加工且可设法压缩放电通道提高精度,大脉宽应该用负极件加工且不必压缩放电通道提高效率及表面质量.     

传导冷却单巴高功率半导体激光器热应力和smile研究

利用有限元模型分别研究了回流过程和工作过程中传导冷却高功率半导体激光器的正应力、切应力和形变,并借助理论公式分析了热应力和smile的产生原因和分布规律.分析表明,在回流过程中热膨胀系数不匹配造成的切应力是正应力和变形的根源,而在工作过程中,热膨胀系数不匹配和温度梯度共同影响着热应力和变形.在此基础上,将回流导致的剩余应力和变形作为初始条件施加在有限元模型上,对工作状态器件的热应力和smile进行模拟,以获得更精确的模拟结果.最后,通过有限元模型和实验手段研究了不同热沉温度对smile的影响.结果表明,工作过程会导致器件的smile增大,热沉温度的升高也会造成smile进一步增大.     

基于LabView的监测系统在微细电火花加工中的应用

电火花加工过程中，间隙内进行能量转换，间隙状态的优劣直接影响脉冲电能的转换效果，在微细电火花加工过程中这种影响更加明显。同时，这也是评判放电加工是否顺利进行的主要标准。在科研生产过程中，需要对放电状态，特别是微细电火花放电加工过程中的波形进行研究，因此，组建了一套用于采集放电波形、检测放电状态的放电监测系统。     

脉冲条件下绝缘介质气体沿面闪络发光特征

对大气环境中脉冲电压加载下绝缘介质沿面闪络放电开展了初步放电图像诊断研究。采用超高速可见光分幅相机诊断指状电极结构下有机玻璃材料在大气环境中不同时刻闪络通道发光图像特征。实验结果表明:闪络通道形成和扩张阶段中，阴极区域和阳极区域均产生放电发光，放电通道沿固体电介质表面快速贯穿，贯穿时间约15 ns，贯穿后发光通道逐渐扩张至一定区域，发光强度大，维持时间长，整体发光时间可持续到μs量级，放电通道内能量分布有所差异。     

陶瓷表面放电光泵浦源放电特性研究

为了提高表面放电光泵浦源的寿命,以Al_2O_3陶瓷作为放电基板,研制了分段表面放电光泵浦源。基于放电电压和电流波形,详细研究了泵浦源的放电周期,放电通道电阻,能量沉积效率和等离子体功率密度。发现泵浦源的放电周期、放电通道电阻和能量沉积效率均随放电间隙长度和混合气体气压的增大而变大,随充电电压的增加而减小;而等离子体功率密度主要取决于充电电压和放电间隙长度,基本不随混合气体气压的改变而变化。在充电电压为26. 8 kV,气压为100 kPa,放电间隙长8 cm的条件下,泵浦源的能量沉积效率约为82%,等离子体功率密度达到了9. 36 MW/cm。实验研究表明:Al_2O_3陶瓷表面放电光泵浦源具有良好的放电特性,较同等条件下聚四氟乙烯表面放电光泵浦源的等离子体功率密度更高,可产生更强的真空紫外辐射,辐射亮度温度大于23 kK。Al_2O_3陶瓷表面放电光泵浦源适用于光泵浦XeF_2气体形成大功率XeF(C-A)蓝绿激光。     

ITER偏滤器朗缪尔探针的设计与研制进展

对ITER 偏滤器朗缪尔探针进行了物理需求分析和结构设计,确定了探针离偏滤器靶板瓦表面的高度范围。通过结构设计和模拟仿真,得到了探针在稳态热负载条件下的温度场分布和应力状况,探针的最高温度低于相应的偏滤器靶板瓦最高温度,探针各个部件的应力低于材料的屈服强度。同时对探针进行了加工工艺和连接工艺的探索研发,初步确定探针体和钨屏蔽结构选用锻造钨材料,而且使用锻造钨试制了探针体和钨屏蔽结构。探针体与钨屏蔽结构之间使用氧化铝陶瓷绝缘,并使用特殊的工艺连接探针体、陶瓷和钨屏蔽结构。     

激光打孔对氮化铝绝缘性能的影响

氮化铝陶瓷具有优良的绝缘和导热性能,是传导冷却超导电力装置绝缘与导热连接件的首选,激光切割是对其进行加工的最有效方法,但激光切割可能对其绝缘性能产生影响,进而影响超导电力装置的安全运行。基于此,通过对激光打孔前后氮化铝基片孔周区域绝缘电阻的测量、金相结构和扫描电镜成分的比较,分析了激光打孔对氮化铝绝缘性能的影响,并总结了选用氮化铝基片作为超导电力装置电流引线的绝缘与导热垫片应注意的问题。     

多注毫米波行波管收集极的热设计

 为解决多注毫米波行波管收集极的散热问题,保障行波管工作可靠性与稳定性,利用 ANSYS 有限元软件模拟分析了收集极的传热特性,针对性地调整和优化了收集极相关参数与结构。研究结果表明：接触热阻是造成收集极具有较高温升的一个重要因素,由接触热阻所造成的温升约占收集极内外温度差的1/3;并不是第二电极与磁环接触宽度越宽所对应的收集极散热能力就越强,而是在一定工作条件下其散热能力存在极限值;对于绝缘陶瓷材料,应根据绝缘陶瓷的温度特性以及行波管的功率大小来进行选择;翼片式散热器是一种符合设计要求的理想散热结构。     

纳米尺度点接触的实验研究

由交叉微米线构成了T形结构,并测量了Pt-Pt和Pt-Au节点的接触热阻和接触电阻。分析表明,增大接触点长度与宽度的比值,线接触模型和椭圆接触模型计算得到的接触热阻的差别逐渐减小,当比值超过20时,椭圆接触模型不再适用。测量得到的接触热阻随温度变化不明显,而接触电阻随温度升高而增大。由于存在表面绝缘层,接触热阻将远大于Wiedemann-Franz定律的预测值。考虑Kundsen数的影响以后,由接触电阻计算得到的金属接触点尺寸近似与温度无关。     

Electrical and thermal transport properties of CdO ceramics

High temperature electrical and thermal transport properties, that is, electrical conductivity, Seebeck coefficient and thermal conductivity, of CdO ceramics have been investigated. Because of the good electrical properties and low thermal conductivity, the dimensionless figure-of-merit ZT of the CdO ceramics reaches 0.34 at 1023 K. This value is comparable to the best reported ZT for the n-type oxide ceramic thermoelectric materials and remains as potential to be further improved by porosity controlling or nanostructuring.     

Heterogeneous ceramics formed by grain boundary engineering

Two examples were selected to emphasize the potential of grain boundary engineering in the performance design of heterogeneous ceramics. Gadolinium-doped ceria-based powders were co-fired with additions of silica, and silica and lanthanum oxide, to test the silica scavenging role of lanthanum. The formation of one ionic conducting secondary phase, instead of an insulating phase, was attempted. The structural, microstructural, and electrical characterization of these samples confirmed the formation of one apatite-type lanthanum silicate-based phase and a significant enhancement of the grain boundary conductivity of these materials. One second approach addressed the formation of one mixed conductor, with electronically conductive grain boundaries, surrounding the grains of one lanthanum gallate-based electrolyte (core-shell type microstructure). Fe-doped grain boundaries were formed by selective Fe-diffusion (thermally assisted) from lanthanum ferrite screen printed layers. Combined microstructural and electrical characterization showed that the adopted solution was also effective.     

Specific features of electrical conductivity of V<Subscript>3</Subscript>O<Subscript>5</Subscript> single crystals

The electrical conductivity of V₃O₅ single crystals has been investigated over a wide temperature range, including the region of existence of the metallic phase and the region of the transition from the metallic phase to the insulating phase. It has been shown that the low electrical conductivity of metallic V₃O₅ is caused, on the one hand, by a lower concentration of electrons and, on the other hand, by a strong electronelectron correlation whose role with decreasing temperature increases as the phase transition temperature is approached. The temperature dependence of the electrical conductivity of the insulating phase of V₃O₅ has been explained in the framework of the theory of hopping conduction, which takes into account the effect of thermal vibrations of atoms on the resonance integral.     

Unipolar characteristics of ZnO ceramics

The paper presents research on unipolar characteristics of ZnO ceramics. Dielectric response analysis is generally known method to characterize electrical properties of materials. It becomes important method for non-destructive testing. Recently, the possibilities and limitations of this method to reflect the deterioration processes due to thermal and electrical stress were investigated. The method is based on measuring the conduction and dielectric or polarization response. Present investigations are bringing extension to this research by high-energy pulse loading of samples that are used e.g. in production of gapless overvoltage protections. Moreover, the variations of characteristics due to pulse energy stress of samples are investigated.     

Preparation and characterization of manganese and cobalt based semiconducting ceramics

The spinel phases Mn_3-x Co _x O₄ are prepared directly and at low temperature (600-700°C) by means of thermal decomposition of mixed oxalate salt precursors in air or controlled atmosphere. The powders so obtained when sintered at 1200°C behave as semiconducting or insulating ceramics, depending on their cobalt content. The electrical properties of these ceramics have been found to be related to the distribution and valencies of the cations in the spinel structure. The study of their crystalline structure and stability, complemented by electrical measurements have permitted us to distinguish two types of compounds. The first type includes those given by Mn_3-x Co _x O₄ with 0 < x < 1. These are stable at high temperature, have a tetragonal structure and are insulators. The cation distributions for them can be deduced from that of hausmannite as given by Mn²⁺ [Mn³⁺ ₂]O₄, by substituting Mn²⁺ ions with Co²⁺ ions. The second type of compounds correspond to the cubic phases and occur for 1 < x < 3. These are unstable at high temperature and show a lower resistivity (e.g. 360 ° cm) which is of particular interest for their application in the design of negative temperature coefficient (N.T.C.) thermistor components.     

Study on the Failure Factors of Composite Insulation in High-Voltage Storage Capacitors

High-voltage storage capacitors, which have composite insulations of polypropylene film and paper impregnated with oil, are working under charge–discharge mode. The insulations are not only exposed to electrical stress but also to thermal stress. Failure factors of composite insulation in capacitors are analyzed from three aspects: partial discharge (PD), space charge, and thermal factors. In order to investigate the possible influences on the dielectric properties of materials in capacitors, aging tests were conducted on the capacitors. Some parameters were detected in aged capacitors compared with nonaged ones. Experimental results reveal that PD is the key factor leading to the breakdown of the capacitor, space charge is the direct factor that induces the breakdown, and thermal factor just accelerates the degradation process.      

On a Possibility of the Overgrowth of Diamonds in the Hydrocarbon Atmosphere

The possibility to increase sizes of diamond crystals at least 25 μm by means of their annealing at a temperature of 1450 K in a hydrocarbon atmosphere has been studied. The initial diamond crystals are incorporated in the polyvinyl acetate layer on the surface of a silicon monocrystal and subjected to the annealing in methane atmosphere with low pressure in the presence of an external electric field with intensity up to 0.04 V/μm. Under these conditions the charged ions of methane dissociation products are accelerated and acquire the kinetic energy that is comparable with energy sufficient to form sp³-hybride bonds, which can lead to an increase in the sizes of initial seed crystallites. The obtained substrates of a composite with a typical thickness not higher than 1.2 mm, which contain a joined diamond crystal in the carbon matrix, can be used as thermal conductive and electrical insulating spacers in devices for cooling items of electronic engineering.