Nonlinear optical studies of the transient coherence in the Quantum Hall system

We review recent investigations of the femtosecond nonlinear optical response of the two-dimensional electron gas (2DEG) in a strong magnetic field. We probe the Quantum Hall (QH) regime for filling factors ν∼1. Our focus is on the transient coherence induced via optical excitation and on its time evolution during early femtosecond timescales. We simultaneously study the interband and intraband coherence in this system by using a nonlinear spectroscopic technique, transient three-pulse four wave mixing optical spectroscopy, and a many-body theory. We observe striking differences in the temporal and spectral profile of the nonlinear optical signal between a modulation doped quantum well system (with the 2DEG) and a similar undoped quantum well (without a 2DEG). We attribute these qualitative differences to Coulomb correlations between the photoexcited electron-hole pairs and the 2DEG. We show, in particular, that intraband many-particle coherences assisted by the inter-Landau-level magnetoplasmon excitations of the 2DEG dominate the femtosecond nonlinear optical response. The most striking effect of these exciton-magnetoplasmon coherences is a large off-resonant four-wave-mixing signal in the case of very low photoexcited carrier densities, not observed in the undoped system, with strong temporal oscillations and unusually symmetric temporal profile.     

Magnetotransport, optical, and electronic subband properties in AlxGa1−xN/AlN/GaN heterostructures

The Shubnikov-de Haas (S-dH) results at 1.5 K for Al_xGa_1−xN/AlN/GaN heterostructures and the fast Fourier transformation data for the S-dH data indicated the occupation by a two-dimensional electron gas (2DEG) of one subband in the GaN active layer. Photoluminescence (PL) spectra showed a broad PL emission about 30 meV below the GaN exciton emission peak at 3.474 eV that could be attributed to recombination between the 2DEG occupying in the AlN/GaN heterointerface and photoexcited holes. A possible subband structure was calculated by a self-consistent method taking into account the spontaneous and piezoelectric polarizations, and one subband was occupied by 2DEG below the Fermi level, which was in reasonable agreement with the S-dH results. These results can help improve understanding of magnetotransport, optical, and electronic subband properties in Al_xGa_1−xAs/AlN/GaN heterostructures.     

Ultra fast third-order non-linear response of amino-triazole donor-acceptor derivatives by optical Kerr effect

We report the study of the temporal dependence of the non-linear optical response of novel organic materials in solution. The experimental results of the optical Kerr gate using 70 fs pulses show a quasi-instantaneous response for three derivatives of an amino-triazole donor-acceptor system. The non-linearity of the compounds is identified as arising from the electronic contribution to the third-order non-linear susceptibility. The non-linear parameters of each sample were obtained using the optical Kerr response of CS₂ as reference.     

Fast-electron optical spectrum of a two-dimensional electron gas in the presence of the Rashba effect

We examine how the Rashba spin-orbit interaction (SOI) affects the fast-electron optical spectrum of a two-dimensional electron gas (2DEG). It is found that for a spin-split 2DEG, the spectrum of optical absorption is mainly induced by plasmon excitation via inter-SO electronic transition. From the width and position of the spectrum, the Rashba spin-splitting can be identified optically and, therefore, important spintronic properties can be measured though optical experiments.     

Size dependence of non-linear optical properties of SiO2 thin films containing InP nanocrystals

SiO₂ composite thin films containing InP nanocrystals were fabricated by radio-frequency magnetron co-sputtering technique. The microstructure of the composite thin films was characterized by X-ray diffraction and Raman spectrum. The optical absorption band edges exhibit marked blueshift with respect to bulk InP due to strong quantum confinement effect. Non-linear optical absorption and non-linear optical refraction were studied by a Z-scan technique using a single Gaussian beam of a He-Ne laser (632.8 nm). We observed the saturation absorption and two-photon absorption in the composite films. An enhanced third-order non-linear optical absorption coefficient and non-linear optical refractive index were achieved in the composite films. The nonlinear optical properties of the films display the dependence on InP nanocrystals size. Received: 27 June 2000 / Accepted: 27 June 2000 / Published online: 13 September 2000     

组装L-B膜光学二次谐波的实验研究

一种分子形成的多层L-B膜由于相邻层的分子取向相反而使非线性极化抵消,总的X~(2)=0.本文用光学二次谐波方法确定了带有不同极性基团的L-B单分子层的有效非线性系数的大小和符号,对有效非线性系数符号相反的两种单分子层交替组装,使相邻单分子层的非线性极化相互叠加,得到了具有较大二阶非线性系数的组装L-B膜.     

A semi-classical approach to two-frequency solitons in a three-level cascade atomic system

A semi-classical theory of two intense optical fields interacting with a third-order non-linear medium composed of a three-level cascade atomic system is presented. It is predicted that non-linear atom-field interactions allow the formation of two-frequency bright, dark and grey spatial solitons. We demonstrate through numerical simulations and analytic stability analysis that the bright and grey solitons are stable.     

Spin-dependent tunneling in nanostructures consisting of magnetic barriers

We study the spin-dependent transport properties of the nanostructures consisting of realistic magnetic barriers produced by the deposition of ferromagnetic stripes on heterostructures. It is shown that, only in the nanostructures with symmetric magnetic field with respect to the magnetic-modulation direction, electrons exhibit a considerable spin-polarization. It is also shown that the degree of the electron spin polarization is greatly dependent on the ferromagnetic stripe and its position relative to the 2DEG. A much larger electron-spin polarization can be obtained by properly fabricating the ferromagnetic stripe and by adjusting its distance above the 2DEG. Received 27 December 2001 and Received in final form 13 March 2002 Published online 25 June 2002     

Role of nitrogen in the mobility drop of electrons in modulation-doped GaAsN/AlGaAs heterostructures

We report transport properties of a 2 dimension electron gas (2DEG) in molecular beam epitaxy-grown GaAs_1−xN_x/AlGaAs modulation-doped heterostructures. Quantum oscillations in far infrared cyclotron resonance prove the efficient electron transfer and formation of the 2DEG. The 2DEG mobility strongly depends on the N concentration in the channel layer. It shows a drastic decrease as compared to N-free samples, even for the smallest amount of N (0.02%). For this N composition, the electron effective mass was found to be 0.073m₀. Reduced growth temperature (450 °C) was found to improve the mobility of N-containing channels. Examination of transport properties from 4 to 300 K and cyclotron resonance experiments give evidence of the presence of ionised impurity-like scattering centres in GaAsN.     

Time domain capacitance spectroscopy of tunneling electrons in the two-dimensional electron gas

We have developed a technique capable of measuring the tunneling current into both localized and conducting states in a 2D electron system (2DES). The method yields I-V characteristics for tunneling with no distortions arising from low 2D in-plane conductivity. We have used the technique to determine the pseudogap energy spectrum for electron tunneling into and out of a 2D system and, further, we have demonstrated that such tunneling measurements reveal spin relaxation times within the 2DEG. Pseudogap: In a 2DEG in perpendicular magnetic field, a pseudogap develops in the tunneling density of states at the Fermi energy. We resolve a linear energy dependence of this pseudogap at low excitations. The slopes of this linear gap are strongly field dependent. No existing theory predicts the observed behavior. Spin relaxation: We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2DES. For most 2D Landau level filling factors, we find that electrons tunnel with a single, well-defined tunneling rate. However, for spin-polarized quantum Hall states (ν=1, 3 and 1/3) tunneling occurs at two distinct rates that differ by up to two orders of magnitude. The dependence of the two rates on temperature and tunnel barrier thickness suggests that slow in-plane spin relaxation creates a bottleneck for tunneling of electrons.     

Threshold reduction of stimulated Brillouin scattering (SBS) using fiber loop schemes

SBS mirrors as self-pumped and easy to handle non-linear optical devices are frequently used in high-power laser systems for improving the beam quality based on optical phase conjugation. Because of the non-linear behaviour, a certain pulse energy or power of incident light is needed to generate enough reflectivity for practical purposes. Therefore, reducing this “threshold” is still a main topic in the development of new schemes for optical phase conjugation. In addition to the taper concept reported earlier, this paper deals with loop schemes for reducing the power requirements. A reduction of the so-called “threshold” by a factor of between two and four was obtained with the schemes investigated using liquids and fibers. Received: 4 September 2001 / Revised version: 22 October 2001 / Published online: 23 November 2001     

Second-order optical non-linearity of proton exchanged lithium tantalate waveguides

A detailed correlation between the fabrication conditions, crystallographic phase state of H_xLi_1-xTaO₃ waveguides and second-order optical non-linearity has been investigated by using reflected SHG measurements from the polished waveguide end face. The non-linearity, strongly reduced after the initial proton exchange, is found to be restored and even increased after annealing. However, this apparent increase in the non-linearity is accompanied by a strong degradation of the quality of the SHG reflected beam in the region of the initial as-exchanged waveguide due to beam scattering. The high temperature proton exchange technique has been shown to produce high-quality α-phase waveguides with essentially undegraded non-linear optical properties. There is no phase transition when the α-phase waveguides are fabricated by direct exchange. This phase presents the same crystalline structure as that of LiTaO₃ and maintains the excellent non-linear properties of the bulk material. The results obtained are important for the design, fabrication and optimization of guided-wave non-linear optical devices in LiTaO₃. Received: 21 May 2001 / Published online: 23 October 2001     

All-optical power limiting in waveguides with periodically distributed Kerr-like non-linearity

A slab waveguide with an embedded non-linear grating is considered as an all-optical power-limiting device. The limiting action is based on the power losses at boundaries between grating sections, where a mode-mismatch results from the self-focusing of the fundamental mode in each non-linear section. Time-harmonic and optical pulse propagation are both modelled numerically by finite-difference techniques to demonstrate the behaviour of the device. Received: 17 May 2001 / Revised version: 7 August 2001 / Published online: 23 October 2001     

Theory of optical bistability in a non-linear quasi-waveguide

Optical bistable behavior in a quasi-waveguide containing non-linear film has been experimentally investigated in several publications in the past years; however, the physical mechanism for optical bistability has not been theoretically explained. In the present letter, we propose a theoretical model and successfully explain the observed optical bistability of both the reflected light and the scattered light (m-lines) in a non-linear quasi-waveguide. The optical bistability in the non-linear quasi-waveguide is due to the scattering-type wavevector mismatch mechanism. Received: 10 July 2002 / Revised version: 10 September 2002 / Published online: 20 December 2002 RID="*" ID="*"Corresponding author. Fax: +86-25/359-5535, E-mail: htwang@nju.edu.cn     

InAlN/GaN异质结二维电子气波函数的变分法研究

使用变分法推导了InAlN/GaN异质结二维电子气波函数和基态能级的解析表达式,并讨论了InAlN/GaN异质结结构参数对二维电子气电学特性的影响.在假设二维电子气来源于表面态的前提下,使用了一个包含两个变分参数的尝试波函数推导电子总能量期望值,并通过寻找能量期望极小值确定变分参数.计算结果显示,二维电子气面密度随InAlN厚度的增大而增大,且理论结果与实验结果一致.二维电子气面密度增大抬高了基态能级与费米能级,并保持二者之差增大以容纳更多电子.InAlN/GaN界面处的极化强度失配随着In组分增大而减弱,二维电子气面密度随之减小,并导致基态能级与费米能级减小.所建立的模型能够解释InAlN/GaN异质结二维电子气的部分电学行为,并为电子输运与光学跃迁的研究提供了解析表达式.     

A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs

The carrier tunneling dynamics of self-assembled InAs quantum dots (QD) is studied using a time-resolved conductance measurement of a nearby two-dimensional electron gas (2DEG). The investigated heterostructures consist of a layer of QDs with different coupling strengths to a 2DEG, adjusted by different thicknesses of the spacer layers. We demonstrate a strong influence of charged QDs on the conductance of the 2DEG, even for very weak coupling between the QD layer and the 2D system, where standard capacitance (C)–voltage (V) spectroscopy is unsuitable to investigate the electronic structure of these QDs.     

Synchronization,zero-resistance states and rotating Wigner crystal

We show, in a framework of a classical nonequilibrium model, that rotational angles of electrons moving in two dimensions (2D) in a perpendicular magnetic field can be synchronized by an external microwave field whose frequency is close to the Larmor frequency. The synchronization eliminates collisions between electrons and thus creates a regime with zero diffusion corresponding to the zero-resistance states observed in experiments with high mobility 2D electron gas (2DEG). For long range Coulomb interactions electrons form a rotating hexagonal Wigner crystal. Possible relevance of this effect of synchronization-induced self-assembly for planetary rings is discussed.     

Edge current switch of two-dimensional electron gas using carrier density control

We have investigated the effects of electron density discontinuity on the transports of edge currents of two-dimensional electron gas (2DEG). The electric field applied to a gate, which covers the 2DEG partially, gives rise to change in the carrier density and results in a density gradient, which deforms the edge currents. The transverse and longitudinal resistances were measured as functions of gate voltage V_G in the quantum Hall regime. The deviations of the longitudinal resistances from the normal quantum Hall resistances are attributed to the reflections of the edge currents under the influence of the abrupt density discontinuity. A switching behavior of the transverse resistance by controlling the gate voltage was observed when V_G=−2.2 and −2.0 V for magnetic field H=5 and 7.2 T, respectively.     

Two dimensional electron gas in a hybrid GaN/InGaN/ZnO heterostructure with ultrathin InGaN channel layer

We investigated the influence of an ultrathin InGaN channel layer on two-dimensional electron gas (2DEG) properties in a newly proposed hybrid GaN/In_xGa_1−xN/ZnO heterostructure using numerical methods. We found that 2DEG carriers were confined at InGaN/ZnO and GaN/InGaN interfaces. Our calculations show that the probability densities of 2DEG carriers at these interfaces are highly influenced by the In mole fraction of the InGaN channel layer. Therefore, 2DEG carrier confinement can be adjustable by using the In mole fraction of the InGaN channel layer. The influence of an ultrathin InGaN channel layer on 2DEG carrier mobility is also discussed. Usage of an ultrathin InGaN channel layer with a low indium mole fraction in these heterostructures can help to reduce the short-channel effects by improvements such as providing 2DEG with higher sheet carrier density which is close to the surface and has better carrier confinement.     

Spin-orbit lateral superlattices: Energy bands and spin polarization in 2DEG

The Bloch spinors, energy spectrum, and spin density in energy bands are studied for a two-dimensional electron gas (2DEG) with Rashba spin-orbit (SO) interaction subject to the one-dimensional (1D) periodic electrostatic potential of a lateral superlattice. The space symmetry of the Bloch spinors with spin parity is studied. It is shown that the Bloch spinors at fixed quasi-momentum describe the standing spin waves with the wavelength equal to the superlattice period. The spin projections in these states have components both parallel and transverse to the 2DEG plane. The anticrossing of the energy dispersion curves due to the interplay between the SO and periodic terms is observed, thus, leading to the spin flip. The relation between the spin parity and the interband optical selection rules is discussed, and the effect of magnetization of the SO superlattice in the presence of an external electric field is predicted. The text was submitted by the authors in English.