次近邻跃迁对石墨烯纳米带输运性质的影响

根据紧束缚模型,利用格林函数的方法,将次近邻跃迁考虑在内,研究了扶手椅型石墨烯纳米带的输运性质.通过数值计算,给出了不同尺寸和不同次近邻跃迁能下系统的能量-电导和电流-电压特征曲线.结果表明,次近邻跃迁对扶手椅型石墨烯纳米带的输运性质有显著的影响.它破坏了电导共振峰关于能量的对称分布,增强了系统的导电性,减小了电子导电偏压阈值,加速了系统输运性能由半导体向导体转变. 次近邻跃迁能和石墨烯纳米带的尺寸越大,这种影响越明显     

外加横向电场作用下石墨烯纳米带电子结构的密度泛函紧束缚计算

采用基于密度泛函理论的紧束缚方法计算研究了外加横向电场对边缘未加氢/加氢钝化的扶手椅型石墨烯纳米带的电子结构及电子布居数的影响.计算结果表明,石墨烯纳米带的能隙变化受其宽带影响.当施加沿其宽度方向的横向外加电场时,纳米带的能带结构及态密度都会产生较大的变化.对于具有半导体性的边缘未加氢纳米带,随着所施加电场强度的增加,会发生半导体-金属的转变.同时,电场也会对能级分布产生显著影响.外加电场导致纳米带内原子上电子布居数分布失去对称性,电场强度越大,其布居数不对称性越明显.边缘加氢钝化可以显著改变纳米带内原子上的布居数分布.     

氢、氟原子边缘修饰β-GeSe纳米带的第一性原理研究

采用第一性原理计算方法研究了二维β相GeSe的电子结构,通过对二维单层β-GeSe剪切得到一维β-GeSe扶手椅型纳米带.研究不同带宽(N=1-5)β-GeSe扶手椅型纳米带的几何结构和电子性质,发现不同带宽纳米带能带带隙不同,带隙总体上随着带宽减小,而纳米带直接带隙半导体性质不受带宽影响.通过使用H、F原子对GeSe扶手椅型纳米带边缘修饰,H原子修饰纳米带导致能带类型从直接带隙向间接带隙的转变.在费米能级附近处F原子各轨道对价带和导带贡献比H原子各轨道贡献多,在边缘修饰中纳米带对F原子更加敏感.未修饰和使用H原子修饰纳米带在可见光范围内没有吸收峰,用F原子修饰纳米带在可见光范围内出现吸收峰.研究表明可以通过边缘修饰调控纳米带光学特性.     

有限二维复式晶格电子结构的尺度效应

以二维复式晶格作为有限系统的集团模型,利用紧束缚近似,在考虑链间耦合及链端效应的情况下,计算了格点数分别为16、32、64、128时π电子在最近邻及次近邻跳跃集团的能谱和态密度.讨论了不同格点数和结构参数对态密度及带宽的影响.     

石墨烯纳米带电子结构的紧束缚法研究

在推导出的一般复式格子的π电子紧束缚能量色散关系的基础上,通过假定石墨烯纳米带的电子横向限制势为无穷大硬壁势,导出石墨烯纳米带的能量色散关系及石墨烯纳米带或为金属或为半导体的条件.结果表明：石墨烯纳米带的电子结构与其几何构型（对称性及宽度）密切相关,所以通过控制几何构型,可将其调制成金属或不同带隙的半导体.这意味着石墨烯纳米带对于发展新型纳米器件具有重要意义. 关键词： 石墨烯纳米带 复式格子 紧束缚模型 电子结构     

旋转双层石墨烯的电子结构

本文将第一性原理和紧束缚方法结合起来, 研究了层间不同旋转角度对双层石墨烯的电子能带结构和态密度的影响. 分析发现, 旋转双层石墨烯具有线性的电子能量色散关系, 但其费米速度随着旋转角度的减小而降低. 进一步研究其电子能带结构发现, 不同旋转角度的双层石墨烯在M点可能会出现大小不同的的带隙, 而这些能隙会增强双层石墨烯的拉曼模强度, 并由拉曼光谱实验所证实. 通过对比双层石墨烯的晶体结构和电子态密度, 发现M点处带隙来自于晶体结构中的“类AB堆垛区”. 关键词： 旋转双层石墨烯 第一性原理 紧束缚 电子结构     

用二维复式晶格有限集团模型计算聚乙炔的电子结构

以二维复式晶格作为有限系统的集团模型,在紧束缚近似下,计算了π电子在最近邻及次近邻跳跃集团的态密度.讨论了不同结构参数对态密度及带宽的影响.     

锯齿型石墨烯纳米带的能带研究

运用π电子紧束缚模型,具体研究了锯齿型石墨烯纳米带(ZGNRs)的边界结构对能带,特别是费米面附近的导带和价带电子的影响.计算了七种不同边界结构的ZGNRs的能带色散关系及费米面附近价带电子在原胞中各原子上的分布情况.计算结果表明:两边界都无悬挂原子的NN-ZGNRs,只有一边界有悬挂原子的DN-ZGNRs,两边界都有五边形环的SPP-ZGNRs和ASPP-ZGNRs为金属性.两边界都有悬挂原子的DD-ZGNRs,一边界为五边形环另一边界无悬挂原子的PN-ZGNRs和一边界为五边形环另一边界有悬挂原子的P 关键词： 锯齿型石墨烯纳米带 紧束缚模型 电子密度分布 缺陷结构     

单壁碳纳米管能带及其电子特性研究

从能带理论出发,采用电子紧束缚能量色散关系,推导锯齿,扶手椅和手性单壁碳纳米管(SWCNT)的电子能带结构表达式,指出单壁碳纳米管或为金属或为半导体的判据。结果表示:单壁碳纳米管的电子结构与其几何结构密切相关,如扶手椅型单壁碳纳米管是金属性的,而对其它类型的单壁碳纳米管是与碳纳米管的手性指数有关,只有手性指数n和m的差别等于3的倍数时,单壁碳纳米管是金属性的,否则会显出有带隙的半导体特性。这意味着单壁碳纳米管是由特殊的电子传输和光学性质,在纳米电子学领域具有巨大的潜在应用价值。     

单空位缺陷诱导的扶手椅型石墨烯纳米带电学性能的转变

本文基于密度泛函理论的第一性原理计算了单空位缺陷对 扶手椅型石墨烯纳米带电学特性的影响. 计算结果表明: 当单空位位于纳米带边缘位置时, 系统结构最稳定. 不同位置上单空位缺陷的引入都会使得原本为半导体的本征 扶手椅型石墨烯纳米带变成金属性; 随着单空位浓度的减小, 其对纳米带能带结构的影响逐渐减弱; 随着纳米带宽度的增大, 表征其金属性的特征值表现出震荡性的减弱. 单空位缺陷诱导的扶手椅型纳米带的半导体特性到金属特性的转变为石墨烯在 电子器件中的应用提供了理论指导. 关键词： 扶手椅型石墨烯纳米带 单空位缺陷 电学性能     

Electron spectrum of double-sheet graphene with broken equivalence of sublattices within layers

The electron spectrum of double-sheet graphene composed of sheets with broken equivalence of sublattices, i.e., of gapped (with the gap width 2Δ) graphene sheets, has been calculated. There is a band gap with the width 2Δ in the spectrum of such a system. The influence of the transverse electric field on the electron spectrum of this system has been investigated. It has been shown that the gap width in the presence of the electric field is proportional to the difference |U ? Δ|; i.e., the gap vanishes at U = Δ. This effect can be suggested as an effective method of eliminating an unwanted gap in the spectrum.     

Mutual influence of uniaxial tensile strain and point defect pattern on electronic states in graphene

The study deals with electronic properties of uniaxially stressed mono- and multi-layer graphene sheets with various kinds of imperfection: point defects modelled as resonant (neutral) adsorbed atoms or molecules, vacancies, charged impurities, and local distortions. The presence of randomly distributed defects in a strained graphene counteract the band-gap opening and even can suppress the gap occurs when they are absent. However, impurity ordering contributes to the band gap appearance and thereby re-opens the gap being suppressed by random dopants in graphene stretched along zigzag-edge direction. The band gap is found to be non-monotonic with strain in case of mutual action of defect ordering and zigzag deformation. Herewith, the minimal tensile strain required for the band-gap opening (≈12.5%) is smaller than that for defect-free graphene (≈23%), and band gap energy reaches the value predicted for maximal nondestructive strains in the pristine graphene. Effective manipulating the band gap in graphene requires balanced content of ordered dopants: their concentration should be sufficient for a significant sublattice asymmetry effect, but not so much that they may suppress the band gap or transform it into the “quasi- (or pseudo-) gap”.     

Carrier generation and recombination rate in armchair graphene nanoribbons

Armchair graphene nanoribbons (A-GNRs), with a tunable energy gap, are an alternative structure for use in optoelectronic devices. The performance of these optoelectronic devices critically depends on the carrier generation and recombination rates, which have been calculated in this paper. Because of the 1D band structure of A-GNRs, carrier scattering, generation and recombination rates in these structures would be completely different from those in 2D graphene sheets. In this paper, using the tight binding model, and by considering the edge deformation and Fermi golden rule, we find the band structure, and the carrier generation and recombination rates for pure A-GNR due to optical and acoustic phonons, as well as Line Edge Roughness (LER) scatterings. The obtained results show that the total generation and recombination rates increase with increasing A-GNR width and eventually saturate for wide ribbons. These rates increase as the carrier concentration is increased (which has been considered homogenous along ribbon width) and temperature. Also, despite the large LER scattering in narrow ribbons, the generation and recombination rates are less for A-GNRs than for graphene sheets. Using this theoretical model, one can find the suitable A-GNR structure for the design of optoelectronic devices.     

拉伸作用对单层石墨片电子能隙的影响

基于紧束缚方法,在考虑最近邻相互作用的情况下,研究了拉伸锯齿型边和扶手型边单层石墨的能带结构,得到了两种类型单层石墨片的π电子能带及带隙与拉力的解析关系式.通过数值计算能够发现：拉力不但使单层石墨产生带隙,而且带隙随着拉力的增大而变宽,并且锯齿型比扶手型的带隙更易变宽. 关键词： 单层石墨片 拉伸形变 电子能隙     

Edge-modified zigzag-shaped graphene nanoribbons: Structure and electronic properties

Control of the band gap of graphene nanoribbons is an important problem for the fabrication of effective radiation detectors and transducers operating in different frequency ranges. The periodic edge-modified zigzag-shaped graphene nanoribbon (GNR) provides two additional parameters for controlling the band gap of these structures, i.e., two GNR arms. The dependence of the band gap E _g on these parameters is investigated using the π-electron tight-binding method. For the considered nanoribbons, oscillations of the band gap E _g as a function of the nanoribbon width are observed not only in the case of armchair-edge graphene nanoribbons (as for conventional graphene nanoribbons) but also for zigzag GNR edges. It is shown that the change in the band gap E _g due to the variation in the length of one GNR arm is several times smaller than that due to the variation in the nanoribbon width, which provides the possibility for a smooth tuning of the band gap in the energy spectrum of the considered graphene nanoribbons.     

Energy band-gap engineering of graphene nanoribbons

We investigate electronic transport in lithographically patterned graphene ribbon structures where the lateral confinement of charge carriers creates an energy gap near the charge neutrality point. Individual graphene layers are contacted with metal electrodes and patterned into ribbons of varying widths and different crystallographic orientations. The temperature dependent conductance measurements show larger energy gaps opening for narrower ribbons. The sizes of these energy gaps are investigated by measuring the conductance in the nonlinear response regime at low temperatures. We find that the energy gap scales inversely with the ribbon width, thus demonstrating the ability to engineer the band gap of graphene nanostructures by lithographic processes.     

梳状波导结构中石墨烯表面等离子体的传播性质

理论上研究了介质/石墨烯/介质梳状波导结构中表面等离子体的传播性质. 波导中表面等离子体模的有效折射率随着石墨烯费米能级的提高而减小, 随着介质折射率的增加而增加. 分析和仿真结果表明, 基于这种梳状波导可以在中红外波段实现新型的纳米等离子体滤波器, 器件的尺度在几百纳米的范围. 通过改变梳状分支的长度, 石墨烯的费米能级, 介质的折射率和波导中石墨烯的层数, 很容易来调节带隙的位置. 另外, 滤波带隙的宽度随着梳状分支数的增加而增加. 这种滤波性质将在可调的高集成光子滤波器件中具有潜在的应用.     

Electronic structure tuning and band gap opening of graphene by hole/electron codoping

A pathway to open the band gap of graphene by p-n codoping is presented according to the first principles study. Two models are used: Lithium adsorbed on Boron-doped graphene (BG) and Boron-Nitrogen (B/N) codoping into graphene. The stability of Lithium adsorbed on BG is firstly analyzed, showing that the hollow site is the most stable configuration, and there is no energy barrier from some metastable configurations to a stable one. After the p-n codoping, the electronic structures of graphene are modulated to open a band gap with width from 0.0 eV to 0.49 eV, depending on the codoping configurations. The intrinsic physical mechanism responsible for the gap opening is the combination of the Boron atom acting as hole doping and Nitrogen (Lithium) as electron doping.     

First-principle study of energy band structure of armchair graphene nanoribbons

First-principle calculation is carried out to study the energy band structure of armchair graphene nanoribbons (AGNRs). Hydrogen passivation is found to be crucial to convert the indirect band gaps into direct ones as a result of enhanced interactions between electrons and nuclei at the edge boundaries, as evidenced from the shortened bond length as well as the increased differential charge density. Ribbon width usually leads to the oscillatory variation of band gaps due to quantum confinement no matter hydrogen passivated or not. Mechanical strain may change the crystal symmetry, reduce the overlapping integral of C–C atoms, and hence modify the band gap further, which depends on the specific ribbon width sensitively. In practical applications, those effects will be hybridized to determine the energy band structure and subsequently the electronic properties of graphene. The results can provide insights into the design of carbon-based devices.     

Manipulation of resonant tunneling by substrate-induced inhomogeneous energy band gaps in graphene with square superlattice potentials

We investigate the resonant transmission of Dirac electrons through inhomogeneous band gap graphene with square superlattice potentials by transfer matrix method. The effects of the incident angle of the electrons, Fermi energy and substrate-induced Dirac gaps on the transmission are considered. It is found that the Dirac gap of graphene adds another degree of freedom with respect to the incident angle, the Fermi energy and the parameters of periodic superlattice potentials (i.e., the number, width and height of the barriers) for the transmission. In particular, the inhomogeneous Dirac gap induced by staggered substrates can be used to manipulate the transmission. The properties of the conductance and Fano factor at the resonant peaks are found to be affected by the gaps significantly. The results may be helpful for the practical application of graphene-based electronic devices.