Effects of Electric Field on Electronic States in a GaAs/GaAlAs Quantum Dot with Different Confinements

Binding energies of shallow hydrogenic impurity in a GaAs/GaAlAs quantum dot with spherical confinement, parabolic confinement and rectangular confinement are calculated as a function of dot radius in the influence of electric field. The binding energy is calculated following a variational procedure within the effective mass approximation along with the spatial depended dielectric function. A finite confining potential well with depth is determined by the discontinuity of the band gap in the quantum dot and the cladding. It is found that the contribution of spatially dependent screening effects are small for a donor impurity and it is concluded that the rectangulax confinement is better than the parabolic and spherical confinements. These results are compared with the existing literature.     

Correlations of conductance peaks and transmission phases in deformed quantum dots

We investigate the Coulomb blockade resonances and the phase of the transmission amplitude of a deformed ballistic quantum dot weakly coupled to leads. We show that preferred single-particle levels exist which stay close to the Fermi energy for a wide range of values of the gate voltage. These states give rise to sequences of Coulomb blockade resonances with correlated peak heights and transmission phases. The correlation of the peak heights becomes stronger with increasing temperature. The phase of the transmission amplitude shows lapses by between the resonances. Implications for recent experiments on ballistic quantum dots are discussed. Received 17 July 1998     

The multilayered spherical quantum dot under a magnetic field

The binding energy of an impurity located at the center of multilayered spherical quantum dot (MSQD) is reported as a function of the dot and barrier thickness for different alloy compositions under the influence of a magnetic field. Within the effective mass approximation, the binding energy has been calculated using the fourth order Runge-Kutta method without magnetic field. A variational approach has been employed if a magnetic field is present. The binding energy in MSQD with equal dot and barrier thickness is calculated. It is shown that the binding energy in MSQD differs from that of a single quantum dot. Also, the geometry is dominant on the binding energy for thin MSQDs, but the magnetic field becomes more effective for thick MSQDs.     

Onion like growth and inverted many-particle energies in quantum dots

Use of surfactants like antimony in MOCVD growth enables novel growth regimes for quantum dots (QDs). The quantum dot ensemble luminescence no longer appears as a single inhomogeneously broadened peak but shows a multi-modal structure. Quantum dot subensembles are forming which differ in height by exactly one monolayer. For the first time the systematic dependence of excitonic properties on quantum dot size and shape can be investigated in detail. Both biexcitonic binding energy and excitonic fine-structure splitting vary from large positive through zero to negative values. Correlation and piezoelectric effects explain the observations.     

Exciton bound to an ionized donor impurity in GaAs/Ga1−xAlxAs ellipsoidal finite-potential quantum dots under hydrostatic pressure

In the framework of perturbation theory, a variational method is used to study the ground state of a donor bound exciton in a weakly prolate GaAs/Ga_1−xAl_xAs ellipsoidal finite-potential quantum dot under hydrostatic pressure. The analytic expressions for the Hamiltonian of the system have been obtained and the binding energy of the bound exciton is calculated. The results show that the binding energy decreases as the symmetry of the dot shape reduces. The pressure and Al concentration have a considerable influence on the bound exciton. The binding energy increases monotonically as the pressure or Al concentration increases, and the influence of pressure or Al concentration is more pronounced for small quantum dot size.     

Hydrogenic impurity states in zinc-blende GaN/AlN coupled quantum dots

Based on the effective-mass approximation, we have calculated the donor binding energy of a hydrogenic impurity in zinc-blende (ZB) GaN/AlN coupled quantum dots (QDs) using a variational method. Numerical results show that the donor binding energy is highly dependent on the impurity position and coupled QDs structural parameters. The donor binding energy is largest when the impurity is located at the center of quantum dot. When the impurity is located at the interdot barrier edge, the donor binding energy has a minimum value with increasing the interdot barrier width.     

Hydrogenic impurity in double quantum dots

The ground state binding energy and the average interparticle distances for a hydrogenic impurity in double quantum dots with Gaussian confinement potential are studied by the variational method. The probability density of the electron is calculated, too. The dependence of the binding energy on the impurity position is investigated for GaAs quantum dots. The result shows that the binding energy has a minimum as a function of the distance between the two quantum dots when the impurity is located at the center of one quantum dot or at the center of the edge of one quantum dot. When the impurity is located at the center of the two dots, the binding energy decreases monotonically.     

Bound polaron in a wurtzite GaN/AlxGa1 − xN ellipsoidal finite-potential quantum dot

A variational method is used to study the ground state of a bound polaron in a weakly oblate wurtzite GaN/Al_xGa_1 − xN ellipsoidal quantum dot. The binding energy of the bound polaron is calculated by taking the electron couples with both branches of LO-like and TO-like phonons due to the anisotropic effect into account. The interaction between impurity and phonons has also been considered to obtain the binding energy of a bound polaron. The results show that the binding energy of bound polaron reaches a peak value as the quantum dot radius increases and then diminishes for the finite potential well. We found that the binding energy of bound polaron is reduced by the phonons effect on the impurity states, the contribution of LO-like phonon to the binding energy is dominant, the anisotropic angle and ellipticity influence on the binding energy are small.     

Kinetics of dark excitons and excitonic trions in InGaAs single quantum well

Magnetooptical studies performed on a wide InGaAs/GaAs single quantum well indicate that optically non-active (dark) excitons with total angular momentum play the role of a reservoir for the creation of free multiparticle excitonic complexes. After analyzing the magnetic field evolution of the circularly polarized components of the low energy structure appearing in the main excitonic luminescence line we assign this feature to the excitonic trion formation. The binding energy of the excitonic trions was estimated to be of the order of 1 meV. Received: 29 October 1997 / Received in final form: 20 February 1998 / Accepted: 21 February 1998     

Hydrogenic impurity states in zinc-blende InGaN quantum dot

Within the framework of effective-mass approximation, the binding energy of a hydrogenic donor impurity in a zinc-blende (ZB) InGaN/GaN cylindrical quantum dot (QD) is investigated using a variational procedure. Numerical results show that the donor binding energy is highly dependent on impurity position and QD size. The donor binding energy E_b is largest when the impurity is located at the center of the QD. The donor binding energy is decreased when the dot height (radius) is increased.