PbMoO4晶体生长基元和生长习性的高温拉曼光谱研究

应用高温拉曼光谱研究了PbMoO₄熔体中的生长基元.通过对不同温度下PbMoO₄晶体拉曼光谱和熔点温度附近熔体高温拉曼光谱的研究,发现PbMoO₄熔体中存在Pb²⁺阳离子和［MoO₄］^2－阴离子生长基元.进一步讨论了PbMoO₄晶体生长基元和各个低指数晶面间的相互作用,解释了晶体的生长习性和枝晶生长的原因,并指出:PbMoO₄晶体生 关键词： 钼酸铅晶体 枝晶 籽晶取向 拉曼光谱     

BSO晶体及生长固/液边界层的拉曼光谱分析

测量了 BSO晶体在常温和高温下宏观拉曼光谱 ,据此分析晶体结构在高温下的变化规律 ,详细实时地测量了晶体在熔化和生长过程中 ,固 /液边界层以及边界层两侧的晶体和熔体的显微拉曼光谱 ,分析得出该晶体生长边界层内的结构特征 ,以及生长基元结构从熔体结构经边界层过渡到晶体结构的变化过程     

Bi4Ge3O12晶体及其熔体结构的高温拉曼光谱研究

研究了BGO晶体在不同温度下(在300—1323 K的温度范围)的拉曼光谱及其熔体的高温拉曼光谱，分析了BGO晶体结构随温度变化的规律及BGO熔体的结构特征.随着温度的升高，BGO晶体的拉曼光谱谱峰都不同程度地向低波数方向移动，也存在不同程度的展宽，同时强度减弱.另外，在BGO熔体中存在［GeO₄］和［BiO₆］的结构基团；但两种结构之间的联键消失，即在熔体中二者是相互独立的生长基元. 关键词： 高温拉曼光谱 熔体 BGO晶体     

Bi4Ge3O12晶体及其熔体结构的高温拉曼光谱研究

研究了BGO晶体在不同温度下(在300-1323 K的温度范围)的拉曼光谱及其熔体的高温拉曼光谱,分析了BGO晶体结构随温度变化的规律及BGO熔体的结构特征.随着温度的升高,BGO晶体的拉曼光谱谱峰都不同程度地向低波数方向移动,也存在不同程度的展宽,同时强度减弱.另外,在BGO熔体中存在[GeO4]和[BiO6]的结构基团;但两种结构之间的联键消失,即在熔体中二者是相互独立的生长基元.     

KTN晶体及其熔体结构的高温拉曼光谱研究

测量并研究了不同温度(室温—1573 K)范围内KTN晶体的拉曼光谱及其熔体的高温拉曼光谱,分析了KTN晶体结构随温度变化的规律及其熔体的结构特征.随着温度的升高,KTN晶体的拉曼光谱谱峰都不同程度地向低波数方向移动,同时存在不同程度的展宽,并伴随强度的减弱.观察并解释了温度353 K附近KTN晶体样品的四方—立方转相现象.研究了KTN晶体拉曼光谱中538cm^-1,585cm^-1,835cm^-1和877cm^-1谱峰及其 关键词： 高温拉曼光谱 熔体 KTN晶体     

BSO晶体生长固/液边界层结构的实时观测研究

实时测量BSO晶体水平区熔法生长过程中,研究固/液边界层以及边界层两侧的晶体和熔体的显微拉曼光谱,晶体生长固/液边界层以及边界层两侧的熔体和晶体的结构特征, 生长基元结构从熔体结构经边界层过渡到晶体结构的变化过程。结果显示, BSO熔体中存在Bi₃O₄和[SiO₄]的键合结构; Bi₃O₄分子基团在固/液边界层聚合形成[BiO₇]八面体单体、多聚体,与[SiO₄]结构基团联结,在通过固／液边界层时进入格位。     

KTa1-xNbxO3晶体生长固/液边界层结构的微区研究

测量了KTa_1－xNb_xO₃(KTN)晶体在常温和高温下的Raman光谱;实时测量了晶体生长过程中,固/液边界层内以及边界层两侧的晶体和熔体的高温显微Raman光谱.通过光谱分析获得了KTN晶体生长固/液边界层内的结构特征,以及晶体生长基元从熔体结构经边界层过渡到晶体结构的变化规律.研究表明,KTN熔体中的 结构基团进入到生长边界层后逐步转化为 八面体结构基团,已具有KTN单胞的一些特征.进而讨论了以 八     

KABO晶体生长形态演化机理的分析

用高温晶体生长实时观察装置，发现了KABO晶体生长形态随着生长体系过饱和度的增大从六方形态逐渐向三角形态过渡，然后又从三角形态逐渐向六方枝蔓晶形态过渡的过程.通过KABO生长溶液高温拉曼谱的测试结果，证明了溶液中存在［BO₃］^3-三角形、［AlO₄］^5-四面体生长基元.运用负离子配位多面体生长基元理论模型，分析了KABO晶体上述生长形态演化的机理.发现KABO的生长形态是由其内部结构和生长基元共同决定的，在不同过饱和度溶液中，KABO生长基元的种类和维度将会发生变化，由此相应引起了KABO的生长形态从六方形态到三角形态，又从三角形态向六方枝蔓晶形态的演变过程. 关键词： KABO晶体 负离子配位多面体 生长形态 枝蔓晶     

Li_2B_4O_7晶体、玻璃及其熔态结构的高温Raman光谱研究

采用半导体脉冲激光光源和时间分辨探测技术 ,测定了二硼酸锂 (Li2 B4O7)晶体、玻璃及其熔融态的常温及高温拉曼光谱 (在 2 98～ 1 773K的温度范围 ) ,观察了其在高温下的相转变、升温过程及其熔体的特征光谱变化。通过谱图解析 ,研究分析了熔体微结构单元的分布和转化及其与固态晶体和玻璃态的区别     

Li2B4O7晶体及其熔体结构的拉曼光谱研究

采用高温原位拉曼光谱技术,研究了Li₂B₄O₇从常温至1 373 K温度范围内的拉曼光谱。在升温过程中,晶体的拉曼光谱出现展宽和红移现象,且强度降低。晶体熔化时,由2个[BO₄]和2个[BO₃]组成的[B₄O₉]环状结构转变成(B₃O₆)3- 六元环和[BO₃]结构,[BO₄]结构减少直至消失。基于密度泛函理论,计算了Li₂B₄O₇晶体的拉曼光谱,对其振动模式进行了分析归属。利用量子化学从头计算法计算了由[B₃O₆-BO₃]为基础相互连接形成的x(Li₂B₄O₇)(x=2, 3, …, 9)的环状团簇模型的拉曼光谱,对Li₂B₄O₇熔体的结构进行了模拟分析。计算结果表明Li₂B₄O₇熔体的阴离子基元为三个(B₃O₆-BO₃)组成的大三元环超级结构。     

Kinetics of monolayer growth

The kinetics of a monolayer growth is studied using the two-dimensional lattice gas model by means of the path-probability method (PPM) for nonequilibrium phenomena. Kinetic equations for the combined processes of relaxation (adsorption and desorption) and diffusion are derived analytically and solved for the first time in the square approximation of the PPM. Comparison of the square approximation with the point and pair approximations along with Monte Carlo simulation shows the effect of using a larger basic cluster than in the previous studies. When the square approximation is used, the growth rate results are much improved in both cases with and without diffusion and agree well with the Monte Carlo simulations results, except for very small values of the driving forceL=/k _b T where is the chemical potential difference between the vapor and the solid phase. In the range where the agreement is good, there exists a region where the growth rateR is proportional to exp(–c/L with a constantc. This is the feature which is characteristic of two-dimensional nucleation-limited growth.     

Sb-mediated growth of high-density InAs quantum dots and GaAsSb embedding growth by MBE

Self-assembled InAs quantum dots (QDs) with high-density were grown on GaAs(0 0 1) substrates by antimony (Sb)-mediated molecular beam epitaxy technique using GaAsSb/GaAs buffer layer and InAsSb wetting layer (WL). In this Sb-mediated growth, many two-dimensional (2D) small islands were formed on those WL surfaces. These 2D islands provide high step density and suppress surface migration. As the results, high-density InAs QDs were achieved, and photoluminescence (PL) intensity increased. Furthermore, by introducing GaAsSb capping layer (CL), higher PL intensity at room temperature was obtained as compared with that InGaAs CL.     

Quasi-steady-state modeling of dendritic growth

A new method of the moving-boundary problem analysis is developed. After proposed coordinate transformation, the quasi-steady-state differential equation was reduced to equivalent Laplace equation. Transformed boundary conditions of a rescaled field distribution reflect the presence of rate-dependent sources on interface. Taking into account the local rate-dependence of the Neumann's boundary conditions, non-equilibrium pattern formation was considered. The problem of dendrite fractal growth was reduced to one of interaction of conformal to tips charged particles. Conditions of the quasi-steady growth and the recurrence formula for k-order dendrite spacing were derived. Theoretically obtained scaling laws for interface shape, dendrite spacing, critical sidebranch distance are confirmed by available experimental data.     

Shear-flow suppression of hotspot growth

We consider the role of fluid shear in maintaining anomalous “hotspot” solutions reported for a chaotically stirred bistable chemical reaction model [S.M. Cox, Persistent localized states for a chaotically mixed bistable reaction, Phys. Rev. E 74 (2006) 056206]. In the well-mixed regime, the chemical concentration is governed by a single autonomous ordinary differential equation with two stable equilibria. Whether the reaction goes to extinction or to an excited state depends on whether the initial concentration lies below or above some unstable threshold. By contrast, when the concentration varies spatially, and the chemical is stirred, the interplay between advection, diffusion and reaction is much more complicated, and the fate of the reaction depends sensitively on the initial conditions. It has previously been shown that, if the stirring is temporally periodic, a localised hotspot may form, and so the system never becomes fully extinct, nor fully excited. In this work, we first demonstrate that hotspots are in some sense generic, in that they are easily found by trial and error, by choosing reaction parameter values between those giving rise to global extinct and excited states. We also show that hotspots may be associated with hyperbolic, elliptic or even parabolic orbits associated with the underlying stirring. We observe that fluid shear is an important mechanism in localising a hotspot, and derive a reduced ordinary differential equation model which can predict the fate of a chemical stripe in a shear flow accurately.