p型GaN/Al0.35Ga0.65N/GaN应变量子阱中二维空穴气的研究

对Ga面p型GaN/Al_0.35Ga_0.65N/GaN应变异质结构中形成的二维空穴气(2DHG)进行了研究.首先基于半导体-绝缘体-半导体异质结构模型确定了应变异质中的临界厚度，然后自洽求解薛定谔方程和泊松方程，计算了当中间势垒层AlGaN处于完全应变状态和半应变状态两种条件下，顶层GaN及中间层AlGaN厚度的变化对2DHG分布的影响.计算结果表明，势垒层AlGaN和顶层GaN的应变状态和厚度对极化引起的2DHG面密度及分布有重要影响.在此基础上制备了p型GaN/Al_0.35Ga_0.65N/GaN应变量子阱结构肖特基器件，并通过器件的C-V测试证实了异质结处2DHG的存在.器件响应光谱的测试结果表明，由于p型GaN/Al_0.35Ga_0.65N/GaN量子阱中强烈的极化作用和Stark效应使得器件零偏压和反向偏压时的响应光谱都向短波方向移动了10 nm，在零偏压下器件在280 nm处的峰值响应为0.022 A/W，在反向偏压为1 V时，峰值响应达到0.19 A/W，已经接近理论值. 关键词： AlGaN 二维空穴气 极化效应     

First-principles study on improvement of two-dimensional hole gas concentration and confinement in AlN/GaN superlattices

Using first-principles calculations based on density functional theory,we have systematically studied the influence of in-plane lattice constant and thickness of slabs on the concentration and distribution of two-dimensional hole gas(2 DHG)in AlN/GaN superlattices.We show that the increase of in-plane lattice constant would increase the concentration of 2 DHG at interfaces and decrease the valence band offset,which may lead to a leak of current.Increasing the thickness of AlN and/or decreasing the thickness of GaN would remarkably strengthen the internal field in GaN layer,resulting in better confinement of 2 DHG at AlN/GaN interfaces.Therefore,a moderate larger in-plane lattice constant and thicker AlN layer could improve the concentration and confinement of 2 DHG at AlN/GaN interfaces.Our study could serve as a guide to control the properties of 2 DHG at Ⅲ-nitride interfaces and help to optimize the performance of p-type nitride-based devices.     

Weak-localization-like temperature-dependent conductivity of a dilute two-dimensional hole gas in a parallel magnetic field

We have studied the magnetotransport properties of a high mobility two-dimensional hole gas (2DHG) in a 10 nm GaAs quantum well with densities in the range of (0.7-1.6) x 10(10) cm(-2) on the metallic side of the zero-field "metal-insulator transition." In a parallel field well above B(c) that suppresses the metallic conductivity, the 2DHG exhibits a conductivity Delta(g)(T) approximately (1/pi) (e(2)/h)lnT reminiscent of weak localization for Fermi liquids. The experiments are consistent with the coexistence of two phases in our system: a metallic phase and a weakly insulating Fermi liquid phase.     

Experimental observation of the spin-Hall effect in a spin–orbit coupled two-dimensional hole gas

Electrically induced ordering and manipulation of electron spins in semiconductors has a number of practical advantages over the established techniques using circularly polarized light sources, external magnetic fields and spin injection from a ferromagnet. The spin-Hall effect utilizes spin–orbit coupling to induce edge spin accumulation in response to a longitudinal electric field which can be applied locally and lead to low energy consumption devices. We study spin accumulation near the edge of a weakly disordered two-dimensional hole gas (2DHG) in a GaAs/AlGaAs heterostructure where the magnitude of the transverse spin current approaches the intrinsic, disorder independent value, in contrast to the impurity dominated regime observed in 3D electron doped systems. In our experiment, the induced spin polarization is detected by the electroluminescence resulting from two p–n junctions bordering the 2DHG channel. When an electric field is applied across the 2DHG channel, a non-zero out-of-plane component of the spin is optically detected. The sign of the spin depends on the direction of the field and is opposite for the two edges, consistent with theory predictions. We also report and analyze an in-plane spin-polarization effect induced in the device by asymmetric electron–hole recombination.     

单晶金刚石氢终端场效应晶体管特性

基于微波等离子体化学气相淀积生长的单晶金刚石制作了栅长为2μm的耗尽型氢终端金刚石场效应晶体管,并对器件特性进行了分析.器件的饱和漏电流在栅压为-6 V时达到了96 mA/mm,但是在-6 V时栅泄漏电流过大.在-3.5 V的安全工作栅压下,饱和漏电流达到了77 mA/mm.在器件的饱和区,宽5.9 V的栅电压范围内,跨导随着栅电压的增加而近线性增大到30 mS/mm.通过对器件导通电阻和电容-电压特性的分析,氢终端单晶金刚石的二维空穴气浓度达到了1.99×10~(13)cm~(-2),并且迁移率和载流子浓度均随着栅压向正偏方向的移动而逐渐增大.分析认为,沟道中高密度的载流子、大的栅电容以及迁移率的逐渐增加是引起跨导在很大的栅压范围内近线性增加的原因.     

Edge detection with large depth of focus using differential Haar–Gaussian wavelet transform

We propose a new differential Haar–Gaussian (DHG) wavelet transform together with the bandwidth matching algorithm to perform edge detection, which can be processed with fast computation in both spatial and frequency domains. The telecentric optics is used to produce high-precision edge detection with large depth of focus.     

SiGe电荷注入晶体管的直流特性模型

为了能直观地体现SiGe/Si电荷注入晶体管的收集极电流与漏源电压的关系，利用输入端SiGe/Si量子阱中二维空穴气的隧道模型，建立起此类器件的输入输出数学模型，并利用MATLAB软件对所建模型进行了模拟，结果显示在漏源电压约为1.5 V时，漏电流出现较强的负微分电阻效应，与文献报道结果符合. 关键词： SiGe/Si异质结 电荷注入晶体管 二维空穴气 隧道效应     

Transport properties of diazonium functionalized graphene: chiral two-dimensional hole gases

The electric transport properties of diazonium functionalized graphene (DFG) were investigated. The temperature dependence of the resistivity (ρ-T) and the Shubnikov-de Haas oscillation of the DFG revealed two-dimensional hole gas (2DHG) behaviors. The DFGs exhibited unusual weak localization behaviors in which both inelastic and chirality-breaking elastic scattering processes should be taken into account, meaning that graphene chirality was maintained. Because of the giant decrease in the diffusion coefficient, the scattering rates remained relatively low in the presence of suppression of the scattering lengths. The decreases of both the mean free path and the Fermi velocity were responsible for the suppression of the diffusion coefficient and hence the charge mobility.     

Carbon-doped high-mobility hole gases on (0 0 1) and (1 1 0) GaAs

Since Stormer and Tsang have introduced the first two-dimensional hole gas (2DHG) in the GaAs/AlGaAs heterosystem, the choice of suitable dopants was limited to beryllium and silicon over the last 20 years. Both acceptor atoms have significant disadvantages, i.e. either high-diffusion rates or a limitation to specific growth directions. Utilizing a carbon filament-doping source, we prepared high-quality 2DHGs in the (0 0 1) and the nonpolar (1 1 0) crystal plane with carrier mobilies beyond 10⁶ cm²/Vs in quantum well and single interface structures. Low-temperature magnetoresistance measurements recover a large number of fractional QHE states and show a pronounced beating pattern from which the Rashba induced spin-splitting has been determined. In addition, 2DHGs have been grown on cleaved edges of (1 1 0) and (0 0 1) wafers with transport features in qualitative agreement to our findings on (1 1 0) substrates.     

Hole mobility enhancement in GaAs/p-Al Ga As QW-HEMT structures with (4 1 1)A super-flat interfaces grown by MBE

Be-doped GaAs/p-Al Ga As QW-HEMT structures with well width of and 50 nm were simultaneously grown on (4 1 1)A and (1 0 0) GaAs substrates by MBE. Be-doping concentration in the p-Al Ga As layer was , and the undoped Al Ga As spacer layer was 6 nm thick. Hole concentration was about for nm. Hole mobility at 10 K in the conventional (1 0 0) samples remained almost constant (about 20 000 cm (V s) for the current in the direction) with decreasing down to 7 nm and it rapidly decreased to 2760 cm (V s) at nm. On the other hand, in the (4 1 1)A samples, hole mobility (10 K) increased from 17 500 cm (V s) nm) to 33 900 cm (V s) nm) and dropped rapidly down to 4090 cm (V s) nm) for a current direction of . This significant enhancement of hole mobility in the (4 1 1)A samples is mainly due to (1) the significantly reduced interface roughness scattering of 2DHG when using the (4 1 1)A super-flat interfaces and (2) the reduced effective mass of holes in the narrow (4 1 1)A QWs ( –20 nm). Shubnikov–de Haas (SdH) measurements on the (4 1 1)A QW sample nm) confirmed the reduced effective mass (0.30 ) of holes.     

Fringe pattern correlator for three-dimensional object recognition

We propose a novel three-dimensional (3-D) object-recognition method based on a Fourier-transform profilometry technique and a two-dimensional (2-D) correlation technique. Height information on 3-D objects is transformed to phase information on 2-D complex amplitude by use of the Fourier-transform profilometry technique. 3-D objects are recognized using correlation by use of the transformed complex amplitude.     

激光二极管相对于铯饱和吸收D2线的无调制扰动三次谐波锁频

将频率调制加在声光调制器上 ,用三次谐波探测法获得了铯原子D2 线的三阶微分饱和光谱。采用这种激光器无调制扰动方案结合三次谐波锁频技术 ,实现了 85 2nm的分布布拉格反射器半导体激光器相对于 6S1/2 F =4- 6P3 /2 F′ =5超精细跃线的频率锁定。由锁定后的频率误差信号估算 ,10s内激光频率起伏小于± 35 0kHz ,相对频率稳定度约 1× 10 -9。这种无调制扰动方案可以消除一般的饱和吸收稳频方法中由于直接对激光器进行频率调制而带来的额外频率噪声 ;三次谐波锁频技术的应用 ,还可有效地降低铯原子饱和吸收谱中剩余多普勒背景的影响     

A sectioning technique for sodium chloride single crystals and its application for ion implantation studies

A sectioning technique for sodium chloride single crystals has been developed. This technique, which is based on the formation of a silver chloride film, is capable of removing layers of constant thickness up to 2μg/cm². Being insensitive to radiation damage of the. NaCl-surface this film technique can be applied in studies of penetration and diffusion in NaCl. An electro-magnetic isotope separator has been used to implant radioactive phosphorous, krypton and xenon atoms in single crystals of sodium chloride, and examples are shown where the film technique has been applied for the study of range distributions and diffusion processes.     

Extraction of tight binding parameters from in-situ ARPES on the continuously doped surface of cuprates

Recently we developed a technique of ozone/vacuum annealing to continuously change the doping level of the surface of Bi_2Sr_2CaCu_2O_(8+x)and measured a nearly whole superconducting dome on one surface by in-situ angle-resolved photoemission spectroscopy [arXiv: 1805.06450]. Here we study the evolution of the electronic structures of Bi_2Sr_2CaCu_2O_(8+)xusing this technique together with tight binding fits. The tight binding parameters are extracted to study their evolution with doping.     

Linear signal combination T2 spectroscopy

A technique is presented for performing T2 spectroscopy in magnetic resonance imaging (MRI). It is based on a weighted linear combination of T2 decay data. The data is combined in a manner that acts like a filter on the T2 spectrum. The choice of weighting coefficients determines the filter specifications (e.g. passband/stopband locations, stopband suppression factors). To perform spectroscopy, a series of filters are designed with narrow passbands centered about consecutive regions of the T2 spectrum. This provides an estimate of every region of the spectrum. Taken together, an initial estimate of the full T2 spectrum is thus obtained. However, the filtering process causes a distortion of the estimate relative to the true spectrum. To reduce this distortion, deconvolution is performed. The characteristics of the technique are first evaluated through simulation. The technique is then applied to experimental MRI data to demonstrate practical feasibility. T2 spectroscopy falls into a class of problems requiring inverse transformation with a set of exponential basis functions (i.e. the Laplace Transform). It is demonstrated how the present technique may be applied to problems involving non-exponential basis functions as well.     

Off-resonance binomial preparatory pulse technique for high sensitivity MRI of H2O17

H2O17 is a freely diffusible tracer and naturally occurring isotope of O16 detectable by MRI and has been shown to be useful for assessing cerebral perfusion in animal studies using direct and indirect MR detection techniques. However, earlier MR techniques are either not sensitive to changes in small concentrations of tissue H2O17 or are not practical for use on clinical scanners. In this work, a novel method for detecting H2O17 with high sensitivity has been proposed that uses a short, intense, binomial preparatory spin lock pulse with resonance offsets for high sensitive rapid, multislice imaging of tissue H2O17. Two sets of phantom experiments were performed on the 1.5 T and repeated on 3.0 T to assess the feasibility of the proposed technique. The phantom was constructed using ovalbumin and doped with 0.4 atom% and 1.0 atom% H2O17. After obtaining initial parameters, the proposed technique was validated in an anesthetized primate model that was injected with 1.8 cc of 40 atom% H2O17. Phantom experiments showed that the proposed technique was able to detect H2O17 with relatively high sensitivity and high B1 amplitude (and small offsets) preparatory pulses produced similar results as low B1 amplitude (and larger offsets). Primate brain study showed a 42.97% difference in mean signal intensity between pre- and post-H2O17 injection. The proposed technique was successfully implemented on a clinical scanner and was able to detect H2O17 with relatively high sensitivity. Primate study has shown that such a technique can be successfully used for human imaging applications to investigate and assess cerebral perfusion.     

Adsorbed state of nitrogen on ruthenium catalysts: TPD and isotopic study

The adsorbed state of nitrogen on Ru catalysts was studied by a TPD technique combined with an isotopic technique. (1) A molecular and an atomic species on Ru powder, (2) a molecular and three atomic species on Raney-Ru, and (3) two molecular and probably three atomic species on Raney-Ru/K were identified, respectively. Relations between the adsorbed states and those reactivities for an isotopic equilibration reaction of N₂ were discussed.     

Ethylene monitoring by differential absorption with a CO2 waveguide laser

In this paper we report on a differential absorption technique using a CO₂ waveguide laser. The method is based on the measurement of the differential absorption between two different frequencies of the same selected CO₂ laser line. The sensitivity of the technique depends strongly on the total pressure and has been estimated to be about a few tens of ppb or better over a 1 km path length in C₂H₄ diluted with air to a total pressure of a few tens of torrs. Its relative simplicity and high sensitivity at low total pressure enable this technique to be applied to gas detection either at high altitude or to local monitoring of a low pressure sample.     

S波段2 kW连续波功率合成技术

 介绍了S波段基于行波管放大器的2 kW连续波功率合成技术。对大功率合成效率以及影响幅相一致性的原因进行了分析。在分析的基础上设计了2 kW连续波功率合成放大器，阐述了幅度均衡的实现方法、相位均衡的实现方法和合成器的击穿保护措施,并开展了实验研究，实验结果表明：采取幅相均衡技术以后，合成效率大于95％。