(TiO2)12量子环及过渡金属化合物掺杂对其电子性质影响的密度泛函理论研究

本文采用第一性原理中基于密度泛函理论(DFT)的广义梯度近似(GGA)方法, 设计了一种新的(TiO₂)₁₂ 量子环结构, 研究了它的几何结构、平均结合能及电子云分布等属性. 在此新型结构的基础上, 分别采用过渡金属化合物MoS₂, MoSe₂, MoTe₂, WS₂, WSe₂和WTe₂进行掺杂, 并分析了掺杂后体系的几何结构及电子属性(如平均结合能、能级结构、HOMO-LUMO轨道电子云密度分布和电子态密度等). 计算结果表明: (TiO₂)₁₂量子环直径为1.059 nm, 呈中心对称分布, 且所有原子组成一个二维平面结构, 使其几何结构比较稳定, 另外该量子环HOMO-LUMO轨道电子云分布均匀, 且能隙为3.17 eV, 与半导体材料TiO₂晶体的能隙的实验值(3.2 eV)非常接近. 掺杂后量子环的能隙均大幅减小, 其中WTe₂的掺杂结果能隙最小, 仅为0.61 eV, MoTe₂的掺杂结果能隙最大, 为1.16 eV, 也比掺杂前减小约2.0 eV. 其他掺杂结果的能隙都在1 eV左右, 变化不大. 这个能隙的TiO₂可以利用大部分的太阳光能, 使TiO₂具有更为广泛的应用.     

High stability of the goldalloy fullerenes:A density functional theory investigation of M₁₂@Au₂₀（M=Na,Al,Ag,Sc,Y,La,Lu,and Au） clusters

Discovering highly stable metal fullerenes such as the celebrated C 60 is interesting in cluster science as they have potential applications as building blocks in new nanostructures.We here investigated the structural and electronic properties of the fullerenes M 12 @Au 20(M=Na,Al,Ag,Sc,Y,La,Lu,and Au),using a first-principles investigation with the density functional theory.It is found that these compound clusters possess a similar cage structure to the icosahedral Au 32 fullerene.La 12 @Au 20 is found to be particularly stable among these clusters.The binding energy of La 12 @Au 20 is 3.43 eV per atom,1.05 eV larger than that in Au 32.The highest occupied molecular orbital-lowest unoccupied molecular orbital(HOMO-LUMO) gap of La 12 @Au 20 is only 0.31 eV,suggesting that it should be relatively chemically reactive.     

Electronic structure of solid C48N12 aza-fullerene

I report electronic structures and the cohesive energy for face-centered-cubic (fcc) solid C₄₈N₁₂ using generalized-gradient density-functional theory. The full vibrational spectrum of the C₄₈N₁₂ cluster is calculated within the harmonic approximation at the B3LYP/6-31G* level of theory. The results show that fcc is energetically preferred and a more stable crystal form than body-centered-cubic (bcc). C₄₈N₁₂ clusters are found to condense by a weak (0.29 eV) van der Waals force. The band gap of fcc C₄₈N₁₂ is calculated to be 1.3 eV at the GGA-PW91 level, whereas the HOMO-LUMO gap is calculated to be 2.74 eV using B3LYP/6-31G*.     

Polymerization of Silicon-Doped Heterofullerenes： an Ab Initio Study

We perform the calculations on geometric and electronic structures of Si-doped heterofullerene C5oSi10 and its derivatives, a C40Si20-C40Si20 dimer and a C40Si20-based nanowire by using density-functional theory, The optimized configuration of the C40Si20-based nanowire exhibits a regular dumbbell-shaped chain nanostructure. The electronic structure calculations indicate that the HOMO-LUMO gaps of the heterofullerene-based materials can be greatly modified by substitutionally doping with Si atoms and show a decreasing trend with increase cluster size. Unlike the band structures of the conventional wide band gap silicon carbide nanomaterials, the C40Si20- based nanowire has a very narrow direct band gap of 0.087eV.     

Luminescence characteristics of the Pr3+ ion in SrAlF5

The paper reports on a study of luminescence and excitation spectra of SrAlF₅:Pr³⁺ (0.5 mol %) polycrystals performed at 10 and 300 K with synchrotron radiation in the range from 5 to 25 eV. The Pr³⁺ ions in SrAlF₅ were shown to emit successively two photons in transitions from the ¹ S ₀ and ³ P ₀ levels. The main energy characteristics of the compound, namely, the position of the 4f → 5d excitation band (5.95–8.0 eV), the energy separation between the ¹ S ₀, 4f and the lowest 5d levels (～0.15 eV), and the SrAlF₅ band gap width (～12 eV), were determined. SrAlF₅:Pr³⁺ was found to possess a number of features not found in other Pr³⁺-activated fluorides.     

Carbon- and silicon-capped silicon carbide nanotubes: An ab initio study

A systematic study of fullerene hemisphere capped finite SiC nanotubes is presented. The tubes are spin optimized using the hybrid functional B3LYP (Becke?s three-parameter exchange and the Lee-Yang-Parr correlation functionals) and an all electron 3-21G^? basis. Capping of a SiC nanotube changes cohesive energy, HOMO-LUMO gap and other electronic and geometric properties of a SiC nanotube. Also, the carbon-capped SiC nanotubes are energetically preferable compared to silicon-capped tubes. For example, the binding energy per atom for hydrogen-terminated “infinite” SiC nanotube (5,5) having five unit cells is 4.993 eV, the corresponding numbers being 5.989 eV and 4.812 eV for C-capped and Si-capped nanotubes, respectively.     

Spectral red shift in the Ag2+ doped CdS quantum dots

Photoluminescence spectrum of pure and Silver (Ag²⁺) doped cadmium sulfide (CdS) quantum dots with different doping concentrations and pure Cd concentrations were carried out. A systematic red shift in the band gap energy, ranging from 2.48 eV to 2 eV was noticed with the increasing Ag²⁺ concentration, however, no shift in the band gap energy was observed for varying pure Cd concentration. The red shift of the band gap energy was consistent in both photoluminescence and absorption spectra and the observed energy shifts are equal to the fundamental and overtone energies of the longitudinal optical phonon of Cd²⁺S.     

主链含萘酰亚胺的聚芳醚型聚合物的合成及其光电性能

萘酰亚胺衍生物是一类发光效率优良的电子传输型电致发光材料。本文采用亲核取代反应将其作为聚合物主链的一部分构成主链含1,8-萘酰亚胺的聚芳醚型发光聚合物(PENI),聚合物的重均分子量为4 300。通过FT-IR和NMR对单体及聚合物的结构进行了鉴定,并研究了其光致发光性能和电化学性能。在分子量较小时,PENI薄膜的PL发射峰位于407,456,530 nm;当聚合物分子量提高后,发射峰红移14 nm左右。采用循环伏安法测得聚合物的HOMO和LUMO分别为-5.64 eV和-2.93 eV,E_g为2.71 eV。     

并五苯分子光谱和激发态的密度泛函理论研究

采用密度泛函理论对并五苯分子做理论研究.在几何结构优化的基础上,对其进行频率分析得到了分子的红外光谱和喇曼光谱,并对谱线中的各峰值做了具体指认,同时也得到了分子的最高占据轨道和最低空轨道能隙为2.17 eV.利用含时密度泛函理论对其激发态计算,得到最低十个跃迁允许的单激发态.对前线分子轨道最高占据轨道和最低空轨道分析得到,C-C原子之间形成离域π键.结果表明：并五苯是一种良好的有机半导体材料,并具有很好的发光性能.     

纳米团簇B92的密度泛函理论研究

利用密度泛函理论(DFT)研究了一种新颖的准球形纳米团簇B92.经过结构优化和频率分析,这一准球形笼状团簇的直径为0.968 nm,其结构满足Eoustani提出的"Aufbau principle".团簇B92的平均结合能、能隙(HOMO-LUMO gap)、垂直电离势(VIP)及垂直电子亲和势(VEA)分别为5.28 eV,1.19 eV,5.47eV及2.45 eV.计算所得到的红外谱(IR)上有一个明显的峰在895 Cm-1处.此谱将有助于从实验上确定本文所提出的团簇B92的结构,团簇B92的电荷分布表明,其有望成为未来纳米电子学中的一种电容器,另外,作为比较,本文也给出了其他一些笼状硼团簇的性质.     

基于密度泛函理论的单层氢化石墨烯特性分析

本文采用密度泛函理论的第一性原理方法,研究了不同尺寸H-graphene的稳定性、HOMO-LU-MO能隙以及电子激发态.研究结果表明,对于C_(16)H_(10)、C_(30)H_(14)、C_(48)H_(18)、C_(70)H_(22)、C_(96)H_(26)、C_(126)H_(30)计算的比结合能,C_(126)H_(30)相比C_(16)H_(10)的比结合能增长23.9%,且比结合能随着H-graphene尺寸扩大而增加,意味着稳定性不断提高.通过对HOMO-LUMO能隙分析发现,在较小尺寸的H-graphene中,由于量子效应起主要作用,因此出现了较大的HOMO-LUMO能隙,且随着H-graphene团簇尺寸的增加,能隙逐渐缩小可以看出,对于无限大的H-graphene团簇中,HOMO-LUMO能隙无限趋近于零(相当于零带隙),其电子性质与纯石墨烯相似.通过分析C_(16)H_(10)、C_(30)H_(14)、C_(48)H_(18)、C_(70)H_(22)激发态以及了吸收光谱,发现随着尺寸的扩大,吸收光谱发生红移,为石墨烯在电子器件领域的应用提供理论基础.     

Morphological and electronic properties of the thin film phase of pentacene investigated by AFM and STM/STS

We investigated the morphological, structural and electronic properties of Pentacene thin films grown by vacuum thermal evaporation on different inert substrates at room temperature. The results of our AFM and STM analysis give an interplanar spacing of 1.54 nm corresponding to the (0 0 1) distance of the so-called “thin film phase”. The STS measurements show an HOMO-LUMO gap of 2.2 eV.     

Effect of Fe3+-doped Ca12Al14O33 cement on optical and thermal properties

This study aims to investigate the effect Fe ions doped into Ca₁₂Al₁₄O₃₃ (C12A7, 12CaO-7Al₂O₃) cement compound on its thermal and optical properties. Polycrystalline samples of Ca₁₂Al_14?xFe_xO₃₃ (where x?=?0.0, 0.5, and 1.0) were prepared via a solid state reaction in an oxygen atmosphere. The lattice constant of Ca₁₂Al₁₄O₃₃ determined using an XRD technique was in excellent agreement with first-principles calculations. With increasing Fe concentrations, the lattice constants were found to have increased. Additionally, the optical gaps of Ca₁₂Al_14?xFe_xO₃₃, (x?=?0, 0.25, 0.5, and 1.0) were 3.9?eV, 3.77?eV, 3.75?eV and 3.63?eV, respectively. It was clearly seen that the optical gap decreased with increasing Fe concentrations. As revealing by first-principles calculations, the optical gap was directly related to the electronic transition from the occupied electronic state of extra-framework O^2? ions (as free O^2? ions inside nano-cage) to the conduction band. Moreover, we also found that the thermal conductivity Ca₁₂Al_14?xFe_xO₃₃ was reduced when the larger atomic mass and atomic radii Fe was substituted into Al sites. Hence, this indicated that Fe³⁺-substitution into Al³⁺ sites of Ca₁₂Al₁₄O₃₃ cement directly affected both its optical gap and thermal conductivity.     

Double charge transfer in H+ + Mg Collisions

The total cross section for the reaction H⁺ + Mg → H^? + Mg⁺⁺ is calculated in the energy range of 10-10 000 eV. The double charge exchange cross section is large, rising to a maximum of 4× 10^?16 cm² at 100 eV.     

A better ferrimagnetic half-metal LuCu3Mn4O12: Predicted from first-principles investigation

Electronic structure calculations based on density functional theory (DFT) within the generalized gradient approximation (GGA) and GGA+U for manganite cuprate compound LuCu₃Mn₄O₁₂ have been performed, using the full-potential linearized augmented plane wave method. The calculated results indicate that LuCu₃Mn₄O₁₂ is ferrimagnetic and half-metallic in both GGA and GGA+U calculations. The minority-spin band gap is 0.7 eV within GGA, which is larger than that of LaCu₃Mn₄O₁₂ (0.3 eV), indicating its better half-metallicity. Further, the minority-spin gap enlarges from 0.7 to 2.8 eV with U taken into account, and simultaneously the Fermi level being shifted to the middle of the gap, making the half-metallic energy gap to be 1.21 eV. These results demonstrate that electronic correlation effect enhances the stability of half-metallic property. These facts make this system interesting candidates for applications in spintronic devices.     

Oxygen impact on quantum confinement effect for silicon clusters in different size regimes: ab initio investigations

The phenomena where the parameter like optical gap, HOMO-LUMO gap etc of a cluster will behave like a monotonic function with respect to its size is called quantum confinement effect. Here we are dealing with clusters having number of silicon atoms as 10, 16, 19, 20, 35, 54 and 78 which are representatives of different size regime clusters. For each clusters we have experimented with a number of isomers and the results we are showing are only of the stable most isomers. Then for each clusters we are capping them with oxygen atoms and calculating their optical response using DFT based calculations. We also calculate their HOMO-LUMO gap with and without oxygen atoms. The main essence of this work is mainly revolving around the variation of optical gap as well as the HOMO-LUMO gap for all the clusters with respect to their size and also whether oxygen insertion can induce any changes in quantum confinement effect. Also for Si₂₀, Si₁₉, Si₁₆ and Si₁₀ we have calculating the optical spectra with a variation of inserted oxygen on the surface of those clusters. All the calculation are performed using Vienna ab initio simulation package (VASP) and Car Parrinello molecular dynamics (CPMD) for geometry optimization. The optical spectra of the clusters are performed by real space PARSEC code and time dependent density functional theory implemented RGWBS code which takes into account the many body effects using GW and BSE equations.     

Studying the occupied and unoccupied electronic structure of LaCoO<Subscript>3</Subscript> by using DFT+embedded DMFT method with the calculated value of <Emphasis Type="Italic">U</Emphasis>

In this work, we present a systematic study of the occupied and unoccupied electronic states of LaCoO₃ compound using DFT, DFT+U and DFT+embedded DMFT methods. The value of U used here is evaluated by using constrained DFT method and found to be ~6.9 eV. It is found that DFT result has limitations with energy positions of PDOS peaks due to its inability of creating a hard gap although the DOS distribution appears to be fine with experimental attributes. The calculated value of U is not an appropriate value for carrying out DFT+U calculations as it has created an insulating gap of ~1.8 eV with limitations in redistribution of DOS which is inconsistent with experimental spectral behavior for the occupied states mainly. However, this value of U is found to be an appropriate one for DFT+embedded DMFT method which creates a gap of ~1.1 eV. The calculated PDOS of Co 3d, La 5d, La 4f and O 2p states are giving a remarkably good explanation for the occupied and unoccupied states of the experimental spectra in the energy range ~–9.0 eV to ~12.0 eV.     

Electro-optical characteristics and field-emission properties of reactive DC-sputtered p-CuAlO2+x thin films

P-type transparent-conducting CuAlO_2+x thin films were deposited on silicon and glass substrates by reactive direct current sputtering of a prefabricated metal powder target having 1:1 atomic ratio of Cu and Al in oxygen-diluted argon atmosphere. XRD spectrum confirmed the proper phase formation of the material. UV-Vis-NIR spectrophotometric measurements showed high transparency of the films in the visible region with direct and indirect band gap values around 3.90 and 1.89 eV, respectively. The room temperature conductivity of the film was of the order of 0.22 S cm⁻¹ and the activation energy was 0.25 eV. Seebeck coefficient at room temperature showed a value of +115 μV/K confirming the p-type nature of the film. Room temperature Hall effect measurement also indicated positive value of Hall coefficient with a carrier concentration 4.4×10¹⁷ cm⁻³. We have also observed the low macroscopic field emission, from the wide band gap p-CuAlO_2+x thin film deposited on glass substrate. The emission properties have been studied for different anode-sample spacing. The threshold field was found to be as low as around 0.5–1.1 V/μm. This low threshold is attributed primarily to the internal nanostructure of the thin film, which causes considerable geometrical field enhancement inside the film as well as at the film/vacuum interface.     

First-principle study of nanostructures of functionalized graphene

We present first-principle calculations of 2D nanostructures of graphene functionalized with hydrogen and fluorine, respectively, in chair conformation. The partial density of states, band structure, binding energy and transverse displacement of C atoms due to functionalization (buckling) have been calculated within the framework of density functional theory as implemented in the SIESTA code. The variation in band gap and binding energy per add atom have been plotted against the number of add atoms, as the number of add atoms are incremented one by one. In all, 37 nanostructures with 18C atoms, 3 × 3 × 1 (i.e., the unit cell is repeated three times along x-axis and three times along y-axis) supercell, have been studied. The variation in C–C, C–H and C–F bond lengths and transverse displacement of C atoms (due to increase in add atoms) have been tabulated. A large amount of buckling is observed in the carbon lattice, 0.0053–0.7487 Å, due to hydrogenation and 0.0002–0.5379 Å, due to fluorination. As the number of add atoms (hydrogen or fluorine) is increased, a variation in the band gap is observed around the Fermi energy, resulting in change in behaviour of nanostructure from conductor to semiconductor/insulator. The binding energy per add atom increases with the increase in the number of add atoms. The nanostructures with 18C+18H and 18C+18F have maximum band gap of 4.98 eV and 3.64 eV, respectively, and binding energy per add atom –3.7562 eV and –3.3507 eV, respectively. Thus, these nanostructures are stable and are wide band-gap semiconductors, whereas the nanostructures with 18C+2H, 18C+4H, 18C+4F, 18C+8F, 18C+10F and 18C+10H atoms are small band-gap semiconductors with the band gap lying between 0.14 eV and 1.72 eV. Fluorine being more electronegative than hydrogen, the impact of electronegativity on band gap, binding energy and bond length is visible. It is also clear that it is possible to tune the electronic properties of functionalized graphene, which makes it a suitable material in microelectronics.     

氧原子在X@Al12 (X=C，Si，P+ )团簇吸附性质的研究

利用密度泛函理论了对X@Al12 (X=C, Si, P+)团簇吸附氧原子特性进行了研究,分别分析了氧原子在三个吸附位置(顶位置、桥位置和空位置)的氧原子吸附能,HOMO-LOMO能隙和电荷转移等性质。结果表明氧原子更倾向于吸附在空位位置。C@Al12和Si@Al12, P+@Al12 在对氧的吸附性质上比较接近。氧在X@Al12(X= C, Si, P+)的吸附性质与Al13−有显著不同。在Al13−O中O是倾向于以桥位形式吸附在Al13−上的。X@Al12(X=C, Si, P+)和Al13−的电子结构有着明显的差异,这导致了O在这些团簇表面不同的吸附形式,表明掺杂可以有效的改变团簇的性质。