Diode-pumped passively Q-switched picosecond Nd:GDxY1-xVO4 self-stimulated raman laser

An efficiency of 8.2% is demonstrated for a diode-pumped passively Q-switched self-stimulated Raman laser with an a-cut mixed vanadate crystal, Nd:Gd0.8Y0.2VO4. At 2.2 W of incident pump power, the self-stimulated Raman laser produces pulses as short as 660 ps at a Stokes wavelength of 1175 nm with 2.7 microJ of energy per pulse at a 66-kHz repetition rate.     

Compact efficient all-solid-state eye-safe laser with self-frequency Raman conversion in a Nd:YVO4 crystal

An efficient compact eye-safe laser at 1525 nm is presented by use of self-frequency Raman conversion in a diode-pumped actively Q-switched Nd:YVO4 1342-nm laser. At an incident pump power of 13.5 W, the self-stimulated Raman laser produces 1.2 W of 1525-nm average output power at a repetition rate of 20 kHz. The corresponding peak power at 1525 nm is generally greater than 10 kW for repetition rates from 5 to 20 kHz.     

Second-Stokes YVO4/Nd:YVO4/YVO4 self-frequency Raman laser

We demonstrated an efficient second-Stokes Raman laser emission at 1313 nm based on self-frequency stimulated Raman scattering from a diode-end-pumped actively Q-switched YVO(4)/Nd:YVO(4)/YVO(4) laser at 1064 nm for the first time, to the authors' knowledge. A double-end diffusion-bonded Nd:YVO(4) composite crystal was adopted for sufficiently improving the thermal lensing effect in the course of self-frequency stimulated Raman scattering operation. With an incident pump power of 14.6 W and a pulse repetition (PRR) of 40 kHz, a maximum average output power of 2.34 W was obtained, corresponding to an optical-to-optical conversion efficiency of 16%. Pulse width and peak power were 1.2 ns and 49 kW, respectively.     

All-optical active mode locking with a nonlinear semiconductor modulator

All-optical active mode locking of a picosecond Nd:YVO(4) laser is demonstrated by use of an intracavity semiconductor nonlinear Fabry-Perot mirror. The reflectivity of the Fabry-Perot mirror is modulated by optical carrier injection. Depending on the carrier recombination time, the width of the Nd:YVO(4) laser pulses varies from 6 to 20 ps, as is typical for passively mode-locked Nd:YVO(4) lasers.     

Characteristics of the temperature-tunable Nd:YAG/YVO4 Raman laser

We demonstrate a tunable crystalline Raman laser by varying the temperature of Raman crystal. Nd:YAG and YVO(4) crystals were selected as the laser and Raman gain media, respectively. The center wavelength of this Nd:YAG/YVO(4) Raman laser was tuned over a 0.49 nm range from 1175.76 to 1175.27 nm when the temperature of the Raman crystal was adjusted from 5 °C to 150 °C. The characteristics of this Raman laser including tunability, output power, and beam quality factors (M(2)) dependent on temperature were also studied in this paper.     

掺Nd锆石类激光晶体的Raman光谱研究

测量了Nd∶YVO4和Nd∶GdVO4两种激光晶体的高温拉曼光谱.根据空间群理论指认了测定的特征谱线,依据晶格动力学理论导出了晶体热导率与积分拉曼散射强度的关系.计算了不同方向的晶体热导率,得到了与实验符合的结果.把Nd∶GdVO4晶体的高热导率归因于授主离子的质量和半径的增大,以及由此导致的晶体场效应的显著增强. 关键词： Raman光谱 激光晶体 热导率 空间群     

A Narrow-Linewidth Passively Q-Switched Intracavity YVO4 Raman Laser at 589.16 nm

Journal of Russian Laser Research - We demonstrate a narrow-linewidth passively Q-switched Raman laser at a sodium line of 589.16 nm. Fundamental laser at 1066 nm is generated by c-cut Nd:YVO4...     

LD抽运Nd∶YVO4自喇曼倍频黄光激光器

报道了LD抽运的自喇曼c切Nd∶YVO4调Q腔内倍频黄光激光器.Nd∶YVO4晶体同时作为激光介质和喇曼晶体，通过声光调Q技术，产生了1 178.7 nm的喇曼激光，经过KTP腔内倍频，输出589.4 nm黄光.测量了平均输出功率随抽运功率和脉冲重复率的变化.典型的1 066.7 nm基频光、1 178.7 nm喇曼光和589.4 nm倍频光的脉冲宽度分别为24.9 ns、11.2 ns和6.8 ns.在脉冲重复率为15 kHz，抽运功率为7.56W时，产生了平均功率为151 mW的589.4 nm光的输出.     

Efficient continuous-wave and Q-switched operation of a diode-pumped Yb:KLu(WO4)2 laser with self-Raman conversion

Efficient cw and passively Q-switched operation with self-stimulated Raman scattering conversion was demonstrated in a compact diode-pumped Yb:KLu(WO4)2 laser. A cw output power of 3.28 W was obtained with an optical efficiency of 48.2% and a slope efficiency of 78.2% with respect to the incident pump power. Stable Q-switched operation was achieved with a Cr4+:YAG saturable absorber, generating 32.4 microJ fundamental pulses with a duration of 1.41 ns at 1030.6 nm and 14.4 microJ Raman pulses with a duration of 0.71 ns at 1137.6 nm. At an incident pump power of 7.0 W, the average output power reached 0.9 and 0.4 W for fundamental and Raman radiation, with slope efficiencies of 32.1% and 14.1%, respectively.     

Grazing-incidence YVO4-Nd:YVO4 composite thin slab laser with low thermo-optic aberrations

We present a novel grazing-incidence composite thin slab laser (CTSL) with an almost aberration-free gain medium. The laser consists of a 260-microm thin Nd:YVO4 plate that is diffusion bonded to an undoped YVO4 slab. The Nd:YVO4 plate is cooled at just one side, suppressing temperature gradients that would induce wave-front distortions in the laser field. The pump light of a noncollimated diode bar is directly coupled into the undoped YVO4 slab and guided by total internal reflection to the attached Nd:YVO4 plate. Since any pump-beam-shaping optics can be omitted, the laser is simple and compact. We obtained transverse multimode optical output powers of 14 and 9.3 W with M2 < or = 1.3.     

An efficient and high polarized single cavity Nd:YVO4 microchip laser

An efficient and high polarized microchip green laser with dual Nd:YVO4 crystals is reported. The microchip includes a half-monolithic Nd:YVO4-KTP chip and a second Nd:YVO4 crystal. With two 1 W diode lasers pumped, the output power of TEM₀₀ green laser is 430 mW, and the optical-to-optical conversion efficiency is nearly 21.5 %, when the c-axes of second Nd:YVO4 crystal rotated to 90° from the half-monolithic chip, the polarization ratio of output green laser is 130:1. This laser has the advantages of being simple and easily attainable at a low cost, and suitable for batch production.     

Genetic drive of a laser

Direct production of laser output pulses with arbitrary shapes can be extended to the high-frequency domain by use of optimal driving of the pump power. Genetic algorithms allow us to design the optimal time evolutions of the pump power to counteract the detrimental effect of relaxation oscillations. The method is demonstrated on a Nd3+:YVO4 laser and allows us to produce, e.g., triangular pulses at rates 20 times faster than for proportional modulation.     

Nd:YVO4激光晶体Raman光谱的分析

根据商群对称性分析法对Nd :YVO4 晶体的Raman光谱做了理论计算和指认 ,运用实验的手段 ,根据谱线数目判定其合理性 ,同时断定晶体原胞中含有 4个Nd :YVO4 分子     

Optical parametric oscillator with a pulse repetition rate of 39 GHz and 2.1-W signal average output power in the spectral region near 1.5 microm

We present a singly resonant, synchronously pumped optical parametric oscillator with a record-high repetition rate of 39 GHz. The transform-limited 2.2-ps pulses at 1570 nm have as much as 2.1-W average output power. The all-solid-state pump source is based on a diode-pumped passively mode-locked 39-GHz Nd:YVO4 laser and an efficient ytterbium-doped fiber amplifier.     

Passively mode-locked diode-pumped Nd:YVO4 oscillator operating at an ultralow repetition rate

We demonstrate the operation of an ultralow-repetition-rate, high-peak-power, picosecond diode-pumped Nd:YVO4 passively mode-locked laser oscillator. Repetition rates lower than 1 MHz were achieved with the use of a new design for a multiple-pass cavity and a semiconductor saturable absorber. Long-term stable operation at 1.2 MHz with a pulse duration of 16.3 ps and an average output power of 470 mW, corresponding to 24-kW peak-power pulses, is reported. These are to our knowledge the lowest-repetition-rate high-peak-power pulses ever generated directly from apicosecond laser resonator without cavity dumping.     

大功率激光二极管抽运Nd：YVO4激光器的特性研究

通过对Ｎｄ：ＹＶＯ４晶体吸收特性的研究,对激光输出功率、斜效率与抽运动率的关系进行了理论分析,发现Ｎｄ：ＹＶＯ４激光器在磊功率激光二极管抽运的条件下,激光斜效率随抽运功率的增加而减小。实验表明,理论结果与实验符合得较好。选用２Ｎｄ＾３＋掺杂的原子数分数为０．５％、通光长度为５ｍｍ的Ｎｄ：ＹＶＯ４晶体,在抽运功率５Ｗ左右时,输功率为３Ｗ左右的,获得了７１．５％的激光斜效率。     

脉冲LDA泵浦Nd∶YVO4/GaAs被动调Q锁模激光器

用脉冲激光二极管阵列（LDA）作为泵浦源、微柱透镜阵列和透镜导管作为耦合系统,以As＋注入GaAs可饱和吸收片作为被动调Q锁模元件,实现了Nd∶YVO4激光器调Q锁模运转.调Q运转阶段,激光器每泵浦脉宽内输出一个调Q脉冲,调Q脉宽7ns.调Q锁模运转阶段,初始透过率60％的GaAs晶片对调Q包络内的锁模脉冲的调制深度达到95％以上,锁模脉冲重复频率991 MHz.研究了加在LDA上的电压、方波脉冲的脉宽和重复频率对调Q锁模脉冲特性的影响,并对实验结果进行了讨论.     

Nd:YVO4自受激拉曼激光器调Q锁模特性

利用Nd:YVO4激光晶体的自受激拉曼效应,结合Cr:YAG被动锁模技术和倍频技术,实现了结构紧凑的1176 nm和588 nm黄光锁模激光输出。激光器为LD端面泵浦,三镜折叠腔结构,并且采用了透过率为10%的输出镜。Nd:YVO4晶体长度为10 mm,Nd3+离子掺杂质量分数为0.2%,Cr:YAG晶体的初始透过率为67%。10 W激光泵浦时,1176 nm激光平均输出功率为123 mW,调Q包络宽度为6 ns,调Q包络内的锁模脉冲重复频率高达1 GHz。588.2 nm 黄光的平均输出功率为8 mW。     

Diode-pumped passively mode-locked Nd:YVO4 laser at 914 nm

We demonstrate, for the first time, to our knowledge, a diode-pumped passively mode-locked Nd:YVO4 laser, operating on the 4F(3/2)-4I(9/2) transition of the neodymium ion at 914 nm. We obtained 8.8 ps pulses at approximately 914 nm at a repetition rate of 94 MHz, and an averaged output power of 87 mW by using a semiconductor saturable absorber mirror.     

1.5-mum emissions from laser-diode-pumped Nd-doped microchip solid-state lasers

1.5-mum emissions from Nd:YAG, Nd:YVO(4), and LiNdP(4) O>(12) microchip lasers pumped by laser diodes have been observed. These coherent emissions are attributed to the effect of high-energy modified lattice vibration owing to the existence of Nd ions as well as to stimulated intracavity Raman scattering enhanced by the microchip configuration. A four-wave mixing process involving two lasing fields and a Stokes field was identified as the generator of new adjacent 1.5-mu;m emission.