Diode-pumped passively Q-switched picosecond Nd:GDxY1-xVO4 self-stimulated raman laser |
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Authors: | Chen Y F Ku M L Tsai L Y Chen Y C |
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Institution: | Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan. yfchen@cc.nctu.edu.tw |
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Abstract: | An efficiency of 8.2% is demonstrated for a diode-pumped passively Q-switched self-stimulated Raman laser with an a-cut mixed vanadate crystal, Nd:Gd0.8Y0.2VO4. At 2.2 W of incident pump power, the self-stimulated Raman laser produces pulses as short as 660 ps at a Stokes wavelength of 1175 nm with 2.7 microJ of energy per pulse at a 66-kHz repetition rate. |
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