Electronic properties of graphene nanoribbon doped by boron/nitrogen pair: a first-principles study

By using the first-principles calculations, the electronic properties of graphene nanoribbon (GNR) doped by boron/nitrogen (B/N) bonded pair are investigated. It is found that B/N bonded pair tends to be doped at the edges of GNR and B/N pair doping in GNR is easier to carry out than single B doping and unbonded B/N co-doping in GNR. The electronic structure of GNR doped by B/N pair is very sensitive to doping site besides the ribbon width and chirality. Moreover, B/N pair doping can selectively adjust the energy gap of armchair GNR and can induce the semimetal-semiconductor transmission for zigzag GNR. This fact may lead to a possible method for energy band engineering of GNRs and benefit the design of graphene electronic device.     

First-principles study of plasmons in doped graphene nanostructures

The operating frequencies of surface plasmons in pristine graphene lie in the terahertz and infrared spectral range,which limits their utilization. Here, the high-frequency plasmons in doped graphene nanostructures are studied by the timedependent density functional theory. The doping atoms include boron, nitrogen, aluminum, silicon, phosphorus, and sulfur atoms. The influences of the position and concentration of nitrogen dopants on the collective stimulation are investigated,and the effects of different types of doping atoms on the plasmonic stimulation are discussed. For different positions of nitrogen dopants, it is found that a higher degree of symmetry destruction is correlated with weaker optical absorption. In contrast, a higher concentration of nitrogen dopants is not correlated with a stronger absorption. Regarding different doping atoms, atoms similar to carbon atom in size, such as boron atom and nitrogen atom, result in less spectral attenuation. In systems with other doping atoms, the absorption is significantly weakened compared with the absorption of the pristine graphene nanostructure. Plasmon energy resonance dots of doped graphene lie in the visible and ultraviolet spectral range.The doped graphene nanostructure presents a promising material for nanoscaled plasmonic devices with effective absorption in the visible and ultraviolet range.     

B/N掺杂类直三角石墨烯纳米带器件引起的整流效应

基于密度泛函理论结合非平衡格林函数的方法, 研究了硼(氮)非对称掺杂类直三角石墨烯纳米带器件的电子输运性能. 计算结果表明: 单个硼或氮原子取代类直三角石墨烯纳米带顶点的碳原子后, 增强了体系的电导能力, 并且出现了新颖的整流效应. 分析表明: 这是由于硼氮掺杂类直三角石墨烯纳米带器件在正负偏压下分子能级的移动方向和前线分子轨道空间分布的不对称而产生的. 最重要的是, 当左右类直三角石墨烯纳米带的顶端原子同时被硼和氮掺杂后, 体系的整流效应显著增强, 而且出现负微分电阻效应.     

Electronic properties of boron and nitrogen doped graphene nanoribbons and its application for graphene electronics

On the basis of density functional theory calculations, we have systematically investigated the electronic properties of armchair-edge graphene nanoribbons (GNRs) doped with boron (B) and nitrogen (N) atoms. B (N) atoms could effectively introduce holes (electrons) to GNRs and the system exhibits p- (n-) type semiconducting behavior after B (N) doping. According to the electronic structure calculations, Z-shape GNR-based field effect transistors (FETs) is constructed by selective doping with B or N atoms. Using first-principles quantum transport calculations, we demonstrate that the B-doped p-type GNR-FETs can exhibit high levels of performance, with high ON/OFF ratios and low subthreshold swing. Furthermore, the performance parameters of GNR-FETs could be controlled by the p-type semiconducting channel length.     

硼对氮掺杂的p型ZnO薄膜的影响

利用分子束外延设备在蓝宝石衬底上生长了B/N共掺的p型ZnO薄膜,对比了B/N共掺和N单掺杂样品的物理学性能。通过X射线光电子能谱测试证明了在薄膜中存在有B和B-N键。B/N共掺样品的空穴浓度比单一N掺杂样品高近两个量级。且ZnO：（B,N）薄膜在两年多的时间内一直显示稳定的p型电导。这是由于B-N键的存在提高了N在ZnO薄膜中的固溶度,且B-N键之间强的键能和B占据Zn位所表现的弱施主特性不会带来强的施主补偿效应,说明B是N掺杂ZnO薄膜的一种良好的共掺元素。     

Tuning the electronic and magnetic properties of boron nitride nanotubes

Density Functional Theory is used to investigate the effect of altering the B/N ratio and carbon doping on the electronic and magnetic structure of zigzag, (7, 0) and armchair (5, 5) boron nitride nanotubes. The calculations indicate that increasing the boron content relative to the nitrogen content significantly reduces the band gap to a value typical of a semiconductor. Calculations of carbon doped semiconducting BN tubes, which have more boron atoms than nitrogen atoms have a net spin and a difference in the density of states at the valence band between the spin up and spin down state.     

Electronic,thermal, and optical properties of graphene like SiCx structures: Significant effects of Si atom configurations

We investigate the electronic, thermal, and optical characteristics of graphene like SiC_x structure using model calculations based on density functional theory. The change in the energy bandgap can be tuned by the Si atomic configuration, rather than the dopants ratio. The effects of the concentration of the Si atoms and the shape of supercell are kept constant, and only the interaction effects of two Si atoms are studied by varying their positions. If the Si atoms are at the same sublattice positions, a maximum bandgap is obtained leading to an increased Seebeck coefficient and figure of merit. A deviation in the Wiedemann-Franz ratio is also found, and a maximum value of the Lorenz number is thus discovered. Furthermore, a significant red shift of the first peak of the imaginary part of the dielectric function towards the visible range of the electromagnetic radiation is observed. On the other hand, if the Si atoms are located at different sublattice positions, a small bandgap is seen because the symmetry of sublattice remains almost unchanged. Consequently, the Seebeck coefficient and the dielectric function are only slightly changed compared to pristine graphene. In addition, the electron energy loss function is suppressed in Si-doped graphene. These unique variations of the thermal and the optical properties of Si-doped graphene are of importance to understand experiments relevant to optoelectronic applications.     

氮掺杂双层石墨烯吸附钠的第一性原理研究

采用密度泛函理论(DFT)的第一性原理方法,对Na在本征双层石墨烯(PBLG)和不同掺杂浓度的N掺杂石墨烯(NBLG)表面的吸附性质进行了研究.确定了不同N掺杂浓度时NBLG的最稳定N分布结构,计算了Na在PBLG和不同掺杂浓度的NBLG表面的吸附能.计算结果表明,N原子掺杂倾向于取代对位或次临近位置的C原子,并与下层C原子相对;随着N掺杂浓度的增加,吸附高度逐渐增加,且与掺杂N原子分布相匹配; Na在PBLG表面吸附使平均层间距增加,而在NBLG表面吸附使之减小; Na与C_(27)N_9表面的结合最稳定.     

硼、氮取代二聚苯中碳原子导致层间相互作用本质变化研究

在MP2/aug-cc-pVTZ水平下优化了二聚苯及其碳被硼、氮原子取代的几何构型;计算了这些二聚体的CCSD(T)/CBS相互作用能;并用SAPT2+/aug-cc-pVDZ分析了相互作用能成分.探索了硼、氮取代二聚苯中碳原子所导致层间相互作用本质变化.结果表明:稳定构型而言,从苯(C_6H_6)、1-氮-2-硼杂苯(BNC_4H_6)、1,3-二氮-2,4-二硼杂苯(B_2N_2C_2H_6)二聚体的平行移位(PD)构型向无机苯(B_3N_3H_6)二聚体的夹心(S)构型转变,其中C_6H_6和B_3N_3H_6二聚体稳定构型的堆叠型式分别与之相对应的石墨烯(GE)和六方氮化硼(h-BN)2D层间材料的堆叠型式相一致.硼、氮原子取代二聚苯中的碳原子后使其相互作用能增大,其中BNC_4H_6和B_2N_2C_2H_6二聚体的相互作用能增大较为明显.所研究体系二聚体稳定构型均以色散能为主导、静电能次之、诱导能相对较小.硼、氮取代二聚苯中碳原子后其静电能对总吸引能的贡献明显增大.     

掺杂菱形BN片的石墨烯纳米带的电子特性

采用基于密度泛函理论的第一性原理方法,系统研究掺杂菱形BN片的石墨烯纳米带的电子特性.掺杂使扶手椅型石墨烯纳米带（AGNRs）的带隙增大,不同位置掺杂AGNRs的带隙大小略有差异.在无磁性态,无论是否掺杂,锯齿型石墨烯纳米带（ZGNRs）都为金属.在铁磁态,掺杂使ZGNRs由金属转变为半导体.而处于反铁磁态时,无论是否掺杂,ZGNRs都为半导体,掺杂使其带隙发生改变.掺杂的AGNRs和ZGNRs的结构稳定,掺杂ZGNRs的基态为反铁磁态.掺杂菱形BN片可以有效调控GNRs的电子特性.     

Electronic structure and optical properties of non-metallic modified graphene: a first-principles study

In this paper, the electronic structure and stability of the intrinsic, B-, N-, Si-, S-doped graphene are studied based on first-principles calculations of density functional theory. Firstly, the intrinsic, B-, N-, Si-, S-doped graphene structures are optimized, and then the forming energy, band structure, density of states, differential charge density are analyzed and calculated. The results show that B- and Si-doped systems are p-type doping, while N is n-type doping. By comparing the forming energy, it is found that N atoms are more easily doped in graphene. In addition, for B-, N-, Si-doped systems, it is found that the doping atoms will open the band gap, leading to a great change in the band structure of the doping system. Finally, we systematically study the optical properties of the different configurations. By comparison, it is found that the order of light sensitivity in the visible region is as follows: S-doped> Si-doped> pure > B-doped > N-doped. Our results will provide theoretical guidance for the stability and electronic structure of non-metallic doped graphene.     

Doping-induced giant rectification and negative differential conductance (NDC) behaviors in zigzag graphene nano-ribbon junction

By p-type and n-type doping on the electrode edges of V-notched zigzag graphene nano-ribbons (ZGNRs), four V-notched ZGNR-based PN-junctions are designed theoretically. The electronic transport properties of the doped and un-doped V-notched ZGNRs are studied applying non-equilibrium Green's function method combined with the density functional theory. The numerical results show that, the doped systems are less conductive than the un-doped system, because after doping the transition states become localized. To our surprise, the ZGNR-based PN-junctions do not show obvious rectification by purely doping the boron atoms and nitrogen atoms on the edges of two ZGNR electrodes respectively. However, after hydrogenated the doped boron atoms and nitrogen atoms, the ZGNR systems present giant rectifications with the maximum rectification ratios up to ${10}^6～{10}^7$, which attributed to the vanishing of overlap between left-electrode sub-band and right-electrode sub-band in the negative bias regime after the doped boron and nitrogen atoms being hydrogenated. Due to the same reason, the hydrogenated doping systems also show large negative differential conductance behaviors.     

双氮原子掺入二氧化钛电子结构的第一原理研究

采用基于第一性原理的平面波超软赝势方法计算研究了双N原子掺入金红石相TiO_2的几何结构和电子结构.通过比较三种可能的掺杂方式的总能发现,两个氮原子占据两个相邻的B原子位置时具有最稳定的结构.电子结构分析表明,双N原子掺杂TiO_2出现了杂质能级,三种结构的能带间隙均减小,其中杂质原子最近邻占位时,带隙最小,随着两个杂质原子的距离增大,带隙会逐渐变大.     

B/N掺杂对于石墨烯纳米片电子输运的影响

选用锯齿(zigzag)型石墨烯纳米片为研究对象, Au作为电极, 分子平面与Au的(111)面垂直, 并通过末端S原子化学吸附于金属表面, 构成两种分子器件: 一种是在纳米片的边缘掺杂N(B)原子, 发现电流-电压具有非线性行为, 但是整流系数较小, 特别是掺杂较多时, 整流具有不稳定性; 另一种是用烷链把两个石墨烯片连接, 在烷链附近和石墨烯片的边缘进行N(B)掺杂, 发现在烷链附近掺杂具有较大的整流, 但是掺杂的原子个数和位置会影响整流性能. 研究表明: 整流主要为正负电压下分子能级的移动方向和空间轨道分布不同导致. 部分体系中的负微分电阻现象主要由于偏压导致能级移动和透射峰形态的改变, 并且在某些偏压下主要透射通道被抑制而引起. 关键词： 石墨烯纳米片 电子输运 整流行为 非平衡格林函数方法     

The effect of crystal lattice distortions on the electronic band structure and optical properties of the N,V- and N,Na-doped anatase

The crystal structure, energy band structure and optical absorption of the N,V-doped and N,Na-doped anatase are studied by means of the first-principle pseudo-potential plane wave and linear muffin-tin orbitals methods. We show that the nitrogen and vanadium atoms have a tendency to form covalently bonded pairs. The crystal lattice distortions associated with doping essentially affect the optical absorption. With doping the impurity bands emerge in the band gap of the host anatase, however, a noticeable increase of optical absorption takes place at the energy only above 3 eV. Possible impact of this effect on the photocatalytic activity of the doped anatase is outlined.     

Ab initio thermodynamic characteristics of the formation of oxygen vacancies,and boron,carbon, and nitrogen impurity centers in anatase

Using the ab initio projector augmented wave (PAW) method, calculations are performed for the electronic energy-band structure of titanium dioxide having the structure of anatase doped with boron, nitrogen, and carbon. Thermodynamic characteristics are determined for the formation of impurity centers, such as the preference energy for the interstitial position, the energy of impurity oxidation, and the energy of oxygen vacancy formation. It is shown that under the conditions of thermodynamic equilibrium the interstitial position of boron atoms is stable, whereas carbon atoms, depending on the oxygen pressure, can occupy both interstitial positions and substitutional positions of oxygen atoms, and nitrogen atoms replace oxygen atoms. It is shown that the presence of oxygen vacancies promotes the thermodynamic stability of carbon and nitrogen atoms. The obtained densities of electronic states correspond to ESR spectroscopy data, which indicates the presence of spin-polarized electrons in the states of the oxygen vacancy.     

BN链掺杂的石墨烯纳米带的电学及磁学特性

基于密度泛函理论第一性原理系统研究了BN链掺杂石墨烯纳米带(GNRs)的电学及磁学特性, 对锯齿型石墨烯纳米带(ZGNRs)分非磁态(NM)、反铁磁态(AFM)及铁磁性(FM)三种情况分别进行考虑. 重点研究了单个BN链掺杂的位置效应. 计算发现: BN链掺杂扶手椅型石墨烯纳米带(AGNRs) 能使带隙增加, 不同位置的掺杂, 能使其成为带隙丰富的半导体. BN链掺杂非磁态ZGNR的不同位置, 其金属性均降低, 并能出现准金属的情况; BN链掺杂反铁磁态ZGNR, 能使其从半导体变为金属或半金属(half-metal), 这取决于掺杂的位置; BN链掺杂铁磁态ZGNR, 其金属性保持不变, 与掺杂位置无关. 这些结果表明: BN链掺杂能有效调控石墨烯纳米带的电子结构, 并形成丰富的电学及磁学特性, 这对于发展各种类型的石墨烯基纳米电子器件有重要意义. 关键词： 石墨烯纳米带 BN链掺杂 输运性质 自旋极化     

Doped single‐walled carbon nanotubes and low‐mobility graphene: impact of disorder and dopants on electronic magnetotransport

The impact of disorder introduced by intentional and unintentional (environmental) dopants on the charge transport has been investigated in boron‐ and nitrogen‐doped single‐walled carbon nanotubes, and in low‐mobility monolayer graphene. For doped single‐walled nanotubes a theoretically not predicted plateau‐like region and onsets of oscillatory behaviour in the conductance for boron‐ and nitrogen‐doped nanotubes were observed, respectively. The oscillatory behaviour suggests interplay between the dopants and the helical movement of charges along the tube due to the magnetic field. For low‐mobility graphene the simultaneous appearance of the filling‐factor 2 and 3 plateau was observed in the Quantum‐Hall regime. This is attributed to an electron‐spin–isospin interaction mediated through the high disorder. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

B/N掺杂对双层石墨烯电子特性影响的第一性原理研究

利用平面波超软赝势方法研究了B/N原子单掺杂和共掺杂对双层石墨烯电子特性的影响.对掺杂双层石墨烯进行结构优化,并计算了能带结构、态密度、分波态密度等.分析表明,层间范德瓦尔斯相互作用对双层石墨烯的电子特性有比较明显的影响;B/N原子单掺杂分别对应p型和n型掺杂,会使掺杂片层的能带平移,使得体系能带结构产生较大分裂;双层掺杂的石墨烯能带结构与掺杂原子的相对位置和距离有关,对电子特性有明显的调控作用.其中特别有意义的是,B/N双层共掺杂在不同位置情况下会得到金属性或禁带宽度约为0.3 eV的半导体能带.     

扶手椅型单壁碳纳米管中的B/N对共掺杂

利用第一性原理电子结构计算方法,研究了扶手椅型单壁碳纳米管（SWCNT）的B/N对掺杂效应.研究发现,对于扶手椅型SWCNT两个不同的掺杂位点,B/N对更容易发生在与管轴线成30°角的P₁位点上.B/N对的掺杂使得金属性SWCNT能隙打开,且能隙随着B/N对轴向掺杂浓度的升高而逐渐增大.同时,还发现两B/N对掺杂后SWCNT的电子结构敏感地依赖于B/N对在圆周上的相对位置,能隙随着B/N对相对距离的增大而增大.这归结于B/N对的掺入影响了原有的电荷分布,这种影响是局域的 关键词： 单壁碳纳米管 B/N对掺杂 电子结构 第一性原理