Pressure and volume dependence of thelo-to phonons in InAs

The pressure dependence of thelo-to phonons in InAs has been investigated by Raman scattering using the diamond anvil cell. Indium arsenide transforms, presumably to the rock-salt structure at 70±1 kbar. The mode Grüneisen parameters for thelo-to phonons are γ _lo =0.99±0.03, γ _to =1.2±0.03 respectively. The effective charge,e* _T , for InAs decreases slightly with pressure and this trend is in accordance with the behaviour of other III–V zinc blende structured semiconductors: The structural phase transition is discussed in the light of theoretical calculations for phase stability of III–V compounds, as well as recent high pressure x-ray diffraction studies.     

Network structure and thermal property of a novel high temperature seal glass

In this study, novel glasses based on SrO–La₂O₃–Al₂O₃–B₂O₃–SiO₂ system are investigated for solid oxide fuel and electrolyzer cells. The network structure evolution of the glasses with increasing B₂O₃:SiO₂ ratio was studied using Raman spectroscopy. The thermal properties of the glasses, including glass transition temperature T _g and glass softening temperature T _d , were studied using dilatometry. The thermal stability of the glasses was investigated using X-ray diffraction. The study shows that as the B₂O₃:SiO₂ ratio increases, the SrO–La₂O₃–Al₂O₃–B₂O₃–SiO₂ glass micro-heterogeneity and the amount of non-bridging oxygen atoms increase. Correspondingly, the T _g of the SrO–La₂O₃–Al₂O₃–B₂O₃–SiO₂ glasses changes from 635 to 775°C, and the T _d changes from 670 to 815°C. Glass thermal stability decreases with B₂O₃:SiO₂ ratio increase. The glass without B₂O₃ is thermally stable after being kept at 850°C for 200 hrs.     

Heterogeneous integration of InGaAsP microdisk laser on a silicon platform using optofluidic assembly

Heterogeneous integration of InGaAsP microdisk lasers on a silicon platform is demonstrated experimentally using an optofluidic assembly technique. The 200-nm-thick, 5- and 10-μm-diameter microdisk lasers are fabricated on InP and then released from the substrates. They are reassembled on a silicon platform using lateral-field optoelectronic tweezers (LOET). The assembled laser with 5-μm diameter exhibits a threshold pump power of 340 μW at room temperature under pulse condition. The heterogeneously-integrated InGaAsP-on-Si microdisk laser could provide the much needed optical source for CMOS-based silicon photonics. The small footprint and low power consumption make them attractive for optical interconnect applications. The optofluidic assembly technique enables efficient use of the III–V epitaxial materials in silicon photonic integrated circuits.     

Structure and electrical properties of HfO<Subscript>2</Subscript> high-<Emphasis Type="Italic">k</Emphasis> films prepared by pulsed laser deposition on Si (100)

High-k gate dielectric hafnium dioxide films were grown on Si (100) substrate by pulsed laser deposition at room temperature. The as-deposited films were amorphous and that were monoclinic and orthorhombic after annealed at 500°C in air and N₂ atmosphere, respectively. After annealed, the accumulation capacitance values increase rapidly and the flat-band voltage shifts from −1.34 V to 0.449 V due to the generation of negative charges via post-annealing. The dielectric constant is in the range of 8–40 depending on the microstructure. The I–V curve indicates that the films possess of a promising low leakage current density of 4.2×10⁻⁸ A/cm² at the applied voltage of −1.5 V.     

Synthesis of photosensitive poly(methyl methacrylate-co-glycidyl methacrylate) for optical waveguide devices

Photosensitive poly(MMA-co-GMA) for optical waveguide was synthesized, and the refractive index of the polymer film was tuned in the range of 1.481–1.588 at 1550 nm by mixing with bis-phenol-A epoxy resin. The film, which was made by spinning coated the poly(MMA-co-GMA) with photo initiator, had good UV light lithograph sensitivity, high glass transition temperature (T _g : 153°C, after crosslinking) and good thermal stabilities (T _d : up to 324°C, after crosslinking). The optical waveguides with very smooth top surface were fabricated from the resulting polymer by direct UV exposure and chemical development. For waveguides with cladding, the propagation losses of the channel waveguides were measured to be below 3 dB/cm at 1550 nm.     

Synthesis of a fluorinated photoresist for optical waveguide devices

A linear fluorinated bis-phenol-A novolac resin (LFAR) for optical waveguide was synthesized based on 4,4′-(hexafluoro-isopropylidene)diphenol, epoxy chloropropane and formaldehyde. Negative fluorinated photoresist (FP) was made by composing the LFAR, diphenyl iodonium salt and solvent. The film, which was made by spin-coating FP, had good UV light lithograph sensitivity, large hardness and high glass transition temperature (T _g >170°C, after crosslinking). Low-loss optical waveguides with very smooth top surface were fabricated from the resulting FP by direct UV exposure and chemical development. For waveguides without upper cladding, the propagation loss of the channel waveguides was measured to be 0.21 dB/cm at 1550 nm.     

Long silicon nitride nanowires synthesized in a simple route

Long silicon nitride (Si₃N₄) nanowires with high purity were synthesized by heating mixtures of SiO₂ powders and short carbon fibers at 1430°C for 2 h in a flowing N₂ atmosphere. The nanowires had the length of 1–2 millimeters and the diameters of 70–300 nm, and were mainly composed of ⍺-Si₃N₄, growing along the [001] direction. The vapor–solid (VS) mechanism was employed to interpret the nanowires growth.     

Orientation dependence of electrical properties of 0.96Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-0.04BaTiO<Subscript>3</Subscript> lead-free piezoelectric single crystal

In this paper, a single crystal of 0.96Na_0.5Bi_0.5TiO₃-0.04BaTiO₃ with dimensions of Φ 30×10 mm was grown by the top-seeded-solution growth method. X-ray powder diffraction results show that the as-grown crystal possesses the rhombohedral perovskite-type structure. The dielectric, piezoelectric and electrical conductivity properties were systematically investigated with 〈001〉, 〈110〉 and 〈111〉 oriented crystal samples. The room-temperature dielectric constants for the 〈001〉, 〈110〉 and 〈111〉 oriented crystal samples are found to be 650, 740 and 400 at 1 kHz. The (T _m, ε _m) values of the dielectric temperature spectra are almost independent of the crystal orientations; they are (306°C, 3718), (305°C, 3613) and (307°C, 3600) at 1 kHz for the 〈001〉, 〈110〉 and 〈111〉 oriented crystal. The optimum poling conditions were obtained by investigating the piezoelectric constants d ₃₃ as a function of poling temperature and poling electric field. For the 〈001〉 and 〈110〉 crystal samples, the maximum d ₃₃ values of 146 and 117 pC/N are obtained when a poling electric field of 3.5 kV/mm and a poling temperature of 80°C were applied during the poling process. The as-grown 0.96Na_0.5Bi_0.5TiO₃-0.04BaTiO₃ crystal possesses a relatively large dc electrical conductivity, especially at higher temperature, having a value of 1.98×10⁻¹¹ Ω⁻¹⋅m⁻¹ and 3.95×10⁻⁹ Ω⁻¹⋅m⁻¹ at 25°C and 150°C for the 〈001〉 oriented crystal sample.     

Preparation and characteristics of?a?BaO–Al2O3–B2O3–SiO2–La2O3 glass ceramic via spray pyrolysis

The characteristics of a BaO–Al₂O₃–B₂O₃–SiO₂–La₂O₃ glass ceramic prepared by spray pyrolysis were studied. Glass powders with spherical shape and amorphous phase were prepared by complete melting at a preparation temperature of 1 500°C. The mean size and geometric standard deviation of the powders prepared at the temperature of 1 500°C were 0.6 μm and 1.3. The glass powders had similar composition to that of the spray solution. The glass transition temperature (T _g) of the glass powders was 600.3°C. Two crystallization exothermic peaks were observed at 769.3 and 837.8°C. Densification of the specimen started at a sintering temperature of 600°C, in which Ba₄La₆O(SiO₄)₆ as main crystal structure was observed. Complete densification of the specimen occurred at a sintering temperature of 800°C. The specimens sintered at temperatures above 800°C had main crystal structure of BaAl₂Si₂O₈.     

Synchrotron investigations of electronic and atomic-structure peculiarities for silicon-oxide films’ surface layers containing silicon nanocrystals

Films obtained using molecular-beam deposition of SiO powder on c-Si (111) substrates for the purpose of SiO2 system formation with silicon nanocrystals were investigated before and after 900–1100°C annealing by photoluminescence, ultrasoft X-ray emission spectroscopy, X-ray photoelectron spectroscopy, X-ray absorption near-edge structure spectroscopy, and X-ray diffraction. The appearance of (111)-oriented luminescent silicon nanoclusters in considerable amounts upon annealing at T = 1000–1100°C is established in the investigated films. An anomalous phenomenon of X-ray absorption quantum yield intensity reversal for the L _2,3 elementary silicon edge is detected. Models for this phenomenon are suggested.     

Effects of deposition temperature and post-annealing on structure and electrical properties in (La<Subscript>0.5</Subscript>Sr<Subscript>0.5</Subscript>)CoO<Subscript>3</Subscript> films grown on silicon substrate

(La_0.5Sr_0.5)CoO₃ (LSCO) thin films have been fabricated on silicon substrate by the pulsed laser deposition method. The effects of substrate temperature and post-annealing condition on the structural and electrical properties are investigated. The samples grown above 650°C are fully crystalline with perovskite structure. The film deposited at 700°C has columnar growth with electrical resistivity of about 1.99×10⁻³ Ω cm. The amorphous films grown at 500°C were post-annealed at different conditions. The sample post-annealed at 700°C and 10⁻⁴ Pa has similar microstructure with the sample in situ grown at 700°C and 25 Pa. However, the electrical resistivity of the post-annealed sample is one magnitude higher than that of the in situ grown sample because of the effect of oxygen vacancy. The temperature dependence of resistivity exhibits semiconductor-like character. It was found that post-annealing by rapid thermal process will result in film cracks due to the thermal stress. The results are referential for the applications of LSCO in microelectronic devices.     

Electrochemical performances of FePO<Subscript>4</Subscript>-positive active mass prepared through a new sol–gel method

This investigation is a contribution to the research on alternative cathode materials with much more promising performances for lithium batteries. It deals with the electrochemical properties of iron phosphate compound FePO₄, chemically prepared through the so-called sol–gel Pechini process, terminated by a calcination of the product precursor at temperatures (T _c) ranging between 350°C and 650°C. A crystalline phase was obtained for temperatures ≥400°C. The particle size decreased with the decrease in T _c, giving rise to a Brunauer–Emmett–Teller (BET)-specific surface area, S _BET, as high as 28 m² g⁻¹ for the sample annealed at 400°C. The electrochemical properties of FePO₄-based composite cathodes were characterized on three-electrode laboratory cells. Charge–discharge cycling determined a maximum reversible capacity of 132 mAh g⁻¹, which fell with the increase in T _c. A direct correlation was established between the activity of the material and its active surface area.     

Specific features of the structural states in Pb2CdWO6 in the temperature range 15 ≤ T ≤ 770°C

In the temperature range 15–770°C, a correlation between the dielectric and structural specific features of lead cadmium tungstate is established. When studying the structure of Pb₂CdWO₆ in the temperature range 15 ≤ T ≤ 770°C, the unit-cell parameters and atomic parameters of the orthorhombic phase with space group Pmc2₁ (15 ≤ T ≤ 380°C) and cubic phase with space group Fm3m (380 ≤ T ≤ 770°C) are determined. It is revealed that the antiferroelectric state observed in of Pb₂CdWO₆ in the orthorhombic phase is associated with antiparallel displacements of Pb atoms. In the cubic phase, the Cd atoms are found to have disordered static displacements along [100]-type directions.     

Microwave dielectric properties of the 5.5Li<Subscript>2</Subscript>O–Nb<Subscript>2</Subscript>O<Subscript>5</Subscript>–7TiO<Subscript>2</Subscript> ceramics

A new Li₂O–Nb₂O₅–TiO₂ (LNT) ceramic with the Li₂O:Nb₂O₅:TiO₂ mole ratio of 5.5:1:7 was prepared by solid state reaction route. The phase and structure of the ceramic were characterized by X-ray diffraction and scanning electron microscopy (SEM). The microwave dielectric properties of the ceramics were studied using a network analyzer. The microwave dielectric ceramic has low sintering temperature (∼1075°C) and good microwave dielectric properties of ε _r=42, Q×f=16900 GHz (5.75 GHz), and τ _f =63.7 ppm/°C. The addition of B₂O₃ can effectively lower the sintering temperature from 1075 to 875°C and does not induce degradation of the microwave dielectric properties. Obviously, the LNT ceramics can be applied to microwave low temperature-cofired ceramics (LTCC) devices.     

Proton-implanted optical channel waveguides in Nd<Superscript><Emphasis Type="Bold">3+</Emphasis></Superscript>:MgO:LiNbO<Subscript><Emphasis Type="Bold">3</Emphasis></Subscript>: fabrication,guiding properties,and luminescence investigation

Optical channel waveguides in Nd³⁺:MgO:LiNbO₃ crystals are produced by using implantation of 500 keV protons at dose of 6×10¹⁶ ions/cm² with a stripe photoresist mask. With thermal annealing treatment at 400°C for 60 min, the propagation losses of the waveguides could be reduced down to ∼4 dB/cm at wavelength of 632.8 nm. The calculated modal profiles are in fairly good agreement with the experimental near-field intensity distributions of the waveguide modes. The microluminescence investigation indicates the emission intensity of Nd³⁺ ions is only slightly modified with respect to the bulk, exhibiting potentials for laser applications.     

Non-steady-state photo-EMF in nanostructured GaN and polypyrrole within porous matrices

We report an experimental investigation of the non-steady-state photoelectromotive force in nanostructured GaN within porous glass and polypyrrole within chrysotile asbestos. The samples are illuminated by an oscillating interference pattern created by two coherent light beams and the alternating current is detected as a response of the material. Dependences of the signal amplitude versus temporal and spatial frequencies, light intensity, and temperature are studied for two wavelengths λ=442 and 532 nm. The conductivity of the GaN composite is measured: σ=(1.1–1.6)×10⁻¹⁰ Ω⁻¹ cm⁻¹ (λ=442 nm, I ₀=0.045–0.19 W/cm², T=293 K) and σ=(3.5–4.6)×10⁻¹⁰ Ω⁻¹ cm⁻¹ (λ=532 nm, I ₀=2.3 W/cm², T=249–388 K). The diffusion length of photocarriers in polypyrrole nanowires is also estimated: L _D=0.18 μm.     

Electrophysical properties and the structure of the YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> compound thermally restored after low-temperature decomposition

The electrophysical properties and structure of the nonstoichiometric high-temperature superconductor YBa₂Cu₃O _y restored at T = 930–950°C after low-temperature decomposition (T = 200°C) into phases different in the oxygen content have been studied. It has been shown that, unlike heat treatments at T ≤ 900°C, the superconducting properties are almost completely restored for 3–5 h during grain recrystallization, which is impossible at lower temperatures. After short-term annealing at T = 930–950°C (for 1–2 h), the ceramic material still contains a significant number of structural defects, most likely, in cation sublattices. These defects can contribute to the pinning of magnetic vortices, which substantially increases the critical current density in magnetic fields up to 2 T as compared to ceramic materials produced by the conventional technology.     

A novel anode-supported stable BaCe0.7Ta0.1Y0.2O3− δ membrane prepared by all-solid-state process for solid oxide fuel cells

BaCe_0.7Ta_0.1Y_0.2O_{3− δ} (BCTY) and BaCe_0.8Y_0.2O_{3− δ} (BCY) were synthesized by solid-state reaction method at 1,300 °C for 20 h. After being exposed in 3% CO₂ + 3% H₂O + 94% N₂ at 700 °C for 20 h, the BCTY exhibited adequate chemical stability against carbonations while BCY decomposed into BaCO₃ and CeO₂. The BCTY showed the similar thermal expansion behavior to BCY from room temperature to 1,000 °C in air. The BCTY displayed a conductivity of 0.007 S/cm at 700 °C in humid hydrogen, lower than that of BCY (0.009 S/cm). A fuel cell with 10-μm thick BCTY membrane prepared through an all-solid-state process exhibited 1.004 V for OCV, 330 mW/cm² for maximum output at 700 °C, respectively. Short-term test shows that the fuel cell performance does not degrade after 20 h.     

KF-doped BaTi<Subscript>2</Subscript>O<Subscript>5</Subscript> ferroelectric ceramics by solid-state reaction of KF and sol–gel-derived BaTi<Subscript>2</Subscript>O<Subscript>5</Subscript> powders

We report KF-doping work on the recently found ferroelectric material BaTi₂O₅. The ceramic samples, Ba_1-xK_xTi₂O_5-xF_x, were synthesized by solid-state reaction of mixed KF and sol–gel-derived BaTi₂O₅ powders at 1150 °C. An almost pure phase was obtained for nominal composition x≤0.097, while electron probe microanalysis indicated that the real incorporated K and F contents were less than half of the nominal values. It was observed that KF-doping is beneficial in enhancing the ceramic density to some extent, which is a key issue in sol–gel-derived BaTi₂O₅ ceramics, due to a possible liquid-phase sintering mechanism through the presence of melted KF at the sintering temperature. Scanning electron microscopy images showed that these porous ceramic samples are composed of sub-micron-sized powder aggregates which, with increasing KF-doping, undergo further agglomeration. Dielectric measurement from room temperature to ∼ 560 °C showed a broad ferroelectric phase transition, with T_C ∼ 430 °C for the undoped sample. As KF-doping increases, T_C decreases, and the magnitude of the dielectric constant maximum also displays a decreasing trend. The strongly reduced dielectric response can be partly understood by regarding the porous ceramic sample as a composite material composed of bulk BaTi₂O₅ and air, where the porosity has a significant influence on the effective dielectric constant. PACS 77.84.-s; 77.84.Dy; 81.20.Fw     

Dependence of the resultant Seebeck coefficient on the thickness of Bi<Subscript>0.88</Subscript>Sb<Subscript>0.12</Subscript> alloy in welded M/Bi–Sb/M (M = Cu and Ni) composites

The local Seebeck coefficient α _L and the resultant Seebeck coefficient α _R of M/Bi_0.88Sb_0.12/M (M = Cu and Ni) composites with different thicknesses t _Bi–Sb of Bi–Sb alloy were measured as functions of z and T, where T is the absolute temperature, z is the distance from a center of Bi–Sb alloy to the middle point of two probes and α _L and α _R were measured using two probes separated by s=1.0 mm and s=t _Bi−Sb+0.1 mm, respectively. As a result, α _L was enhanced extremely at the position of 0.2–0.3 mm away from the interfaces, while the local temperature along a composite varies linearly with changes in z within Bi–Sb alloy. The local maximum of α _R at 344 K appeared at t _Bi−Sb≈0.9 mm, so that it is expected to increase up to −167 μV/K at t _Bi−Sb=0.87 mm from the expression fitted well to the experimental data, which is 2.1 times as large as the intrinsic α at 344 K of Bi–Sb alloy. Such a local enhancement in α _L would probably be caused by a temperature gradient across the depletion layer formed at the interface. The thermoelectric figure of merit ZT of a composite with an optimum t _Bi−Sb of 0.87 mm is expected to reach the large value of 0.98 at 344 K, which corresponds to 4.5 times as high a value as ZT=0.22 at 344 K of Bi–Sb alloy. It is thus considered that the increase in α _L at the interface is available as a useful mean of further increase in ZT of thermoelectric devices.