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用特征矩阵法研究一维激光全息光子晶体的禁带特性 总被引:2,自引:1,他引:1
介质中传播方向相反的2束激光干涉可形成具有一维周期结构的体积全息图,而这种全息图可以看作一维光子晶体,称为一维激光全息图光子晶体,用特征矩阵法研究了一维激光全息图光子晶体的透射谱中的禁带随入射角、记录波长、介质折射率、折射率调制度的变化规律。结果表明:当入射角变大,激光波长、介质折射率及介质折射率调制度变小时, 禁带的位置向短波方向移动, 禁带宽度减小。 相似文献
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激光全息法制作二、三维光子晶体相比于传统半导体微加工及精密机械加工技术具有很多优势,比如通过一次光辐射就可以制作出大体积、均匀的周期性结构,且能更自由、更容易地控制光子晶体结构.提出一种多光束干涉模型,通过设计模型中光束的各项参数,计算分析出二、三维光子晶体的结构.基于平面波展开法,理论计算了fcc结构光子晶体的完全禁带随填充率和介电常数比变化的情况.以上计算结果为后期实验中采用激光全息法制作二、三维光子晶体结构提供了良好的指导方向和理论依据.
关键词:
光子晶体
激光全息
多光束干涉
完全禁带 相似文献
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利用传输矩阵法数值计算了一维全息光子晶体的带隙结构,分析了针对记录材料重铬酸盐明胶(DCG),折射率周期性渐变的一维全息光子晶体结构的透射谱特性.通过计算记录光路中相干光束以不同入射角干涉时产生不同的禁带分布范围,与改变再现光路中光束和干板的夹角相比较,提出了弥补固定厚度DCG产生光子晶体的禁带分布范围较窄的方法. 相似文献
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用传输矩阵法计算了一维光子晶体带隙结构对不同偏振态入射光的角度和波长响应. 结果表明,对P偏振态,带隙的宽度明显小于S偏振态. 对于角度响应,两种偏振态有相同的变化趋势,但变化量不同. 而对于波长响应,两种偏振态表现出不同的变化趋势. 引入了“广义布儒斯特角”的概念. 理论分析表明,当光以此角射入光子晶体时,S偏振态入射光的禁带完全保留,而P偏振态入射光的禁带完全消失,从而可以在S偏振态入射光的禁带背景中用P偏振态入射光获得受主掺杂模式. 同时还给出了实验验证结果.
关键词:
体积全息图
光子晶体
偏振 相似文献
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从模拟和实验两个方面研究了一种适用于硅基薄膜太阳电池的一维光子晶体新型背反射器.首先采用时域有限差分方法,模拟研究了组成一维光子晶体的两种介质的折射率比、厚度比以及周期厚度对光子禁带的影响.基于模拟结果,制备出一种由低折射率SiOx层与高折射率非晶硅a-Si层周期性交叠构成的禁带可调式一维光子晶体背反射器.通过改变a-Si层的厚度,使得禁带范围由500—750 nm波长范围红移至650—1100 nm,反射率分别达到96.4%和99%.将上述结构的一维光子晶体作为背反射器分别应用于非晶硅单结太阳电池和非晶硅/微晶硅双结叠层太阳电池,与没有背反射结构电池相比,短路电流密度分别提升了18.3%和15.2%.同时模拟研究了在不同入射角度下自然光、TE波和TM波对光子晶体反射特性的影响.研究结果表明,在太阳电池中,光线倾斜入射对一维光子晶体反射率的影响有限. 相似文献
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研究了由不同周期结构的光子晶体组成的异质结和含耦合杂质的光子晶体异质结的位相. 发现光子晶体异质结使光子晶体杂质模的反射率接近1,但反射相移不随反射率的改变而改变,反射相移只由前边的子光子晶体的禁带、通带或耦合杂质模中的子峰决定. 即异质结的前边的子光子晶体的耦合杂质模中的每一子峰、每一通带或禁带对应的反射相移为2π. 对多杂质耦合的结构,反射相移很灵敏,可用于制作高灵敏光子器件. 以全光位相与非门为例描述全光位相逻辑门的方案和可行性. 另外,这些特性对研究位相有关的新物理过程和现象有意义.
关键词:
光子晶体
位相
异质结
耦合杂质 相似文献
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对于一维复周期光子晶体,当制作用的波长满足一定条件时可以实现禁带的展宽,本文利用传输矩阵法数值计算了偏振态对折射率渐变的一维复周期全息光子晶体的禁带的影响。通过计算发现,制作波长不等的复周期结构光子晶体,随着再现光的照射角度增大,S偏振态下禁带出现分裂;P偏振态下禁带均可视作完整展宽,没有分裂现象。同一制作波长两次曝光制作的复周期结构,不论是P偏振还是S偏振,禁带均实现展宽而没有分裂。这一结果对实现一维全息光子晶体禁带展宽具有指导意义。 相似文献
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采用基于密度泛函理论的第一性原理分析方法的CASTEP软件,计算了Ni、C单掺杂和共掺杂SnO2的晶格参数、能带结构、电子态密度和布局,结果表明:单掺杂和共掺杂均使得晶胞体积略微增大,禁带减小,且仍属于直接带隙半导体,在价带顶和导带底产生杂质能级,其中Ni-C共掺杂时禁带最小,杂质能级最多,电子跃迁需要的能量更小,导电性也就最好.共掺杂时费米能级附近的峰值有所减小,局域性降低,原子间的成键结合力更强,使得SnO2材料也更加稳定. 相似文献
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光子晶体由于具有光子带隙和光子局域等一系列优异的光学特性而受到了人们广泛的关注。由于采用胶体颗粒自组装法制备光子晶体制备工艺简单,所需要的费用也较低,因此已成为制备可见光至红外波段三维光子晶体的一种简便有效的方法。采用垂直沉积法制得了三维光子晶体薄膜,并用扫描电子显微镜和紫外-可见光-近红外分光光度计对其显微结构和光学特性进行了详细的研究。结果表明,自组装薄膜在三维方向上都具有有序结构,其密排面平行于载波片的表面。制备的光子晶体薄膜具有明显的光子带隙特性,带隙中心波长为956nm。研究了带隙中心波长同入射线与密排面法线夹角之间的变化关系,其结果与理论值吻合得很好。 相似文献
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The electronic band structures of wurtzite GaN with Ga and N vacancy defects are investigated by means of the first-principles total energy calculations in the neutral charge state. Our results show that the band structures can be significantly modified by the Ga and N vacancies in the GaN samples. Generally, the width of the valence band is reduced and the band gap is enlarged. The defect-induced bands can be introduced in the band gap of GMV due to the Ga and N vacancies. Moreover, the GaN with high density of N vacancies becomes an indirect gap semiconductor. Three defect bands due to Ga vacancy defects are created within the band gap and near the top of the valence band. In contrast, the N vacancies introduce four defect bands within the band gap. One is in the vicinity of the top of the valence band, and the others are near the bottom of the conduction band. The physical origin of the defect bands and modification of the band structures due to the Ga and N vacancies are analysed in depth. 相似文献
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Superimposed volume holograms for measuring the phase and degree of mutual coherence of a light wave
V. V. Orlov 《Optics and Spectroscopy》2010,108(1):133-136
Superimposed volume holograms, which make it possible to determine the phase and degree of mutual coherence of a stationary
light wave consisting of partially coherent plane components incident on the holograms at different angles are proposed. To
find these parameters of the light wave, the intensities of the waves reconstructed by the holograms are measured in the case
of amplitude and phase modulation of the wave incident on the holograms. The phases and degrees of mutual coherence of the
components of the wave incident on the holograms are found from the measured data. The holograms are studied based on the
modal theory of superimposed volume holograms. 相似文献
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O. V. Andreeva V. G. Bespalov V. N. Vasil’ev A. A. Gorodetskii A. P. Kushnarenko G. V. Lukomskii A. A. Paramonov 《Optics and Spectroscopy》2004,96(2):157-162
A method for studying the parameters of high-selectivity volume holograms and photonic crystal structures using ultrashort pulsed radiation in a wide spectral range is developed. The experimental system and measurement procedure are described. The results of determination of the diffraction efficiency and spectral selectivity of holographic gratings with spatial frequencies of 360 and 640 mm?1 are presented. The parameters of the holograms determined by the method proposed and by the conventional techniques based on the use of continuous laser radiation are found to coincide. 相似文献
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采用矢量平面波方法计算了由球形空气原子构成的体心立方结构和六角密堆结构的光子能带,两种结构下都看到了贯通整个布里渊区的禁带。本文预言周期性介电结构的最大折射率调制度和最大禁带宽度对应于同样的原子体积分数,而且这个最佳的原子体积分数是结构无关的。文中还计算了由各向异性介电小球构成的面心立方结构的光子能带并看到了禁带,这与各向同性介电小球构成的面心立方结构很不相同。 相似文献
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基于密度泛函理论,采用广义梯度近似(GGA+U)平面波超软赝势方法,计算了本征GaN和稀土元素Lu、Sc掺杂GaN体系的电子结构和光学性质.结果表明:计算得到本征GaN的禁带宽度为3.37 eV,与实验值(3.39 eV)接近. Lu掺杂后GaN体系带隙变窄,而Sc掺杂后诱导了深能级杂质,带隙变宽,但仍为直接带隙半导体.掺杂后体系均发生畸变,晶格常数和体积增大,且在费米能级附近产生杂质带. Lu、Sc掺杂GaN体系的静态介电常数较本征GaN(4.50)均有所增大.Lu、Sc掺杂后体系介电常数虚部整体左移,光吸收边往低能方向移动,发生了红移现象.计算结果对稀土元素Lu、Sc掺杂GaN高压光电材料的开发和研究提供了理论依据. 相似文献
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In this paper we investigate the possibility of using thick holograms as diffraction gratings. We compare the well-known parameters of the plane diffraction grating such as dispersion, efficiency, resolution, and others, with those for volume holograms. The calculations for the case of volume holograms are based on the theory of coupled waves. Experiments were performed with volume-phase holograms in transmission, stored in dichromated gelatine layers. The investigations show that the volume hologram fulfills two functions simultaneously. It acts as a spectral predecomposer and also as a high-resolving spectral apparatus. 相似文献
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In this paper, the wave transmission from finite photonic crystals with multiple alternations is investigated using boundary element method (BEM). Since that, in these structures the alternation is not in all directions of space; the investigations of the frequency band gap with desired accuracy are not practical by analytical methods. Also, the frequency dispersion of dielectric rods is an effective parameter in photonic crystals, which this effect in our calculations has been considered. Due to the high capabilities of the BEM, the transmitted wave spectrum in the photonic crystal is calculated by changing the geometrical and optical parameters of the photonic crystal and applying more alternation in its structure and the position and width of the frequency band gap is investigated. Then, it is assumed that the photonic crystal with an arbitrary angle is rotated around the axis which is perpendicular on the crystal cross section and then, it is irradiated with a plan wave. The band gap of the photonic crystals with the desired structure, desired rotation angle and multiple alternations have been solved. Very low information volume, high speed and accuracy during the calculation and useable for any desired structures are the characteristics of this method. 相似文献