A study of hand vibration on chipping and grinding operators,part III: Power levels into the hands of operators of pneumatic tools used in chipping and grinding operations

This paper presents a method for calculating power transmitted to the hands of operators who use vibrating hand tools. Results that relate to a comprehensive multidisciplined NIOSH field study of several hundred chipper and grinder workers who used pneumatic hand tools are presented. The results of this study indicated that the power in the frequency range of 6·3 Hz to 1000 Hz transmitted to the hand ranged from 1·08 × 10³ to 7·23 × 10³ J/s for the chisel and from 8·52 × 10^?1 to 1·57 × 10² J/s for the handle of chipping hammers. For pneumatic grinders the power transmitted to the hands of the tool operators was in the range of 6·58 × 10^?3 to 2·35 × 10^?3 J/s over the same frequency range.     

Deposition of high-ohmic oriented ZnO films on glass,Si, and PEDOT-PSS,PEDOT-PSS(PVA) substrates at low temperatures by DC-magnetron sputtering

Using the technique of DC-magnetron sputtering of zinc target in the temperature range from −30°C to 30°C, we have obtained high-ohmic ZnO films (1.1×10⁹, 2×10¹¹, 1.3×10⁶, and 10⁸ Ω cm) on the substrates of glass, Si, and composites based on poly(3, 4-etylendioxythiophene) doped with polystyrensulfonic acid (PEDOT-PSS), and flexible composites of PEDOT-PSS in polymer matrix of polyvinyl alcohol (PVA). Structural, optical, and electrophysical characteristics of ZnO films prepared on different substrates were studied. Films obtained in certain technological regime are on all substrates oriented along crystallographic direction (002) and have transmission coefficient of the order 80–90% in the range 400–1000 nm. The developed technology for fabrication of high-ohmic grain-oriented ZnO films at low substrate temperatures can be applied to creation of functional elements in acousto- and bioelectronics.     

Ordering,martensitic transformation,and shape memory effect in submicron samples of rapidly quenched Ni<Subscript>50</Subscript>Ti<Subscript>25</Subscript>Cu<Subscript>25</Subscript> alloy

The experiments aimed at developing micro- and nanomechanical devices based on shape memory alloys are described. A novel scheme and a model of microtweezers for manipulating nanoobjects with extremely small sizes (12 × 3 × 1 μm³) are proposed. The control of microtweezers deformation by local heating is demonstrated. The controlled cantilever bending was found to be 1000 nm; this value is in good agreement with the theoretical data.     

Unsteady analysis of six-DOF motion of a 6:1 prolate spheroid in viscous fluid

Free-moving simulations of airplanes, submarines and other automobiles under extreme and emergency conditions are becoming increasingly important from operational and tactical perspectives. Such simulations are fairly challenging due to the extreme unsteady motions and high Re(Reynolds) numbers. The aim of this study is to perform a six-DOF motion simulation of a 6:1prolate spheroid that is falling in a fluid field. Prior to conducting the six-DOF simulation, some verification simulations were performed. First, a laminar flow past an inclined prolate spheroid at a Re number of 1000 and incidence angle of 45. with a tetrahedral mesh was simulated to verify the relevant targeted discrete method for an unstructured mesh. Second, to verify the LES(large eddy simulation) models and dependent parameters for the DDES(delayed detached eddy simulation), a turbulent flow past a sphere was performed at a subcritical Re number of 10000. Third, a steady maneuvering problem about a prolate spheroid pitching up from 0. to 30. incidence at a uniform angular velocity was established based on a dynamic tetrahedral mesh with changing topology and the ALE(arbitrary Lagrangian-Eulerian) method of fluid-structure coupling at a Re number of 4.2 × 10~6.Finally, two six-DOF motions of an inclined 6:1 prolate spheroid at an initial incidence of 45. were simulated at different Re numbers of 10000 and 4.2 × 10~6.     

Nanoparticle Tracking Analysis of Polymer Nanoparticles in Blood Plasma

A successful drug delivery system must overcome complex biological barriers. For particles injected into the blood, one of the first and most critical barriers pertains to blood stability to circulate through the human body. To effectively design drug delivery vehicles, interactions between the particles and blood, as well as the aggregation behavior, must be understood. This work presents a method to analyze particle size and aggregation in blood plasma using a commercially available nanoparticle tracking analysis (NTA) system. As a model system, fluorescently labeled polystyrene nanoparticles are incubated in goat blood plasma and analyzed using NTA. The particles incubated in plasma are found to have a protein corona that is larger than what has been observed by dynamic light scattering (DLS) in diluted plasma. Particles that are decorated with a PEG layer are also found to have large protein coronas in undiluted plasma. Because NTA is based on a unique visualization method, large multicomponent aggregates could be observed and quantified in a manner not feasible with other techniques. PEGylation of the particles is found to decrease the multicomponent aggregation from 1000 ± 200 particles for unmodified to 200 ± 30 particles for 1K PEGylated per 1 × 10⁵ total particles.     

High-performance optics for thermal microscopy

We have developed a thermal microscope which has an InSb detector and optics optimized for the camera. Using this system, we evaluated maximum resolution of a 30×/numerical aperture 0.71 lens made of silicon and germanium, and achieved the cutoff frequency of around 300 line pairs/mm, which is almost a diffraction-limited performance. The thermal microscope is installed on the THEMOS-1000, a product of Hamamatsu Photonics, for thermal emission analysis.     

The interference of an electron beam with the surface reaction between oxygen and germanium

Electron beam assisted adsorption and desorption of oxygen was studied by Auger electron spectroscopy (AES). Beam assisted adsorption was observed on clean as well as on oxidized surfaces. After an oxygen exposure of 1000 × 10^?7 Torr min and continuous irradiation with beam voltage of 1.5 kV and beam current density 2 microA mm^?2, the oxygen 510 eV signal amplitude from the point of beam impact was 2.5 times greater than the signal from the non-irradiated region. The Ge 89 eV signal showed a corresponding decrease. Enhanced adsorption occurred at beam energies as low as 16.5 eV. After irradiation, the oxidized surface was not carbon contaminated. Following an oxygen exposure of 30 min at 0.1 Torr and 550°C and subsequent additional beam assisted exposure of 1000 × 10^?7 Torr min, the maximum oxide thickness was about 18 Å. Beam assisted desorption did not occur from thin oxygen layers (0–510 eV signal strength less than 5 units, calculated oxide thickness about 6 Å), but occurred from thick oxides and stopped after the signal amplitude had decreased to 5 units. Based on these results, a model for the structure of the oxygen layer covering the Ge(111) surface is proposed. Mechanisms for adsorption and desorption are discussed. The implications of beam assisted adsorption and desorption on electron beam operated surface measurements (LEED, AES, ELS, APS etc.) are stressed.     

Energy loss of 1000 keV electrons in thin silicon crystals as measured by high voltage electron microscopy

Abstract

Energy loss spectra of 1000 keV electrons transmitted by [111]-: riented thin silicon crystals were observed by an energy analyzer attached to the HVEM. The crystals were set to the systematic 220 Bragg reflection. Measurements were made for crystal thickness ranging from 1000 to 10,000 Å, which were determined by observations of pendellösung fringes.

Results were analyzed with Landau's transport equation, giving the : onclusion that the loss probability, which is the reciprocal of the mean free path, is 0.52 ± 0.02 × 10^?3 A^?1 for plasmon excitation and 1.50 ± 0.02 × 10^?3 A^?1 for L-electron excitation.     

Mg+注入对GaN晶体辐射损伤的研究

在蓝宝石衬底上通过金属有机物化学气相沉积(metal-organic chemical vapor deposition，MOCVD)方法外延生长的GaN薄膜具有良好的结晶品质，χ_min达到2.00%. 结合卢瑟福背散射/沟道(Rutherford backscattering/channeling，RBS/C)和高分辨X射线衍射(high-resolution X-ray diffraction，HXRD)的实验测量，研究了不同剂量和不同角度Mg⁺注入GaN所造成的辐射损伤. 实验结果表明，随注入剂量的增大，晶体的辐射损伤也增大，注入剂量在1×10¹⁵atom/cm²以下，χ_min小于4.78%，1×10¹⁶atom/cm²是Mg⁺注入GaN的剂量阈值，超过这个阈值，结晶品质急剧变差，χ_min达到29.5%；随机注入比沟道注入的辐射损伤大，且在一定范围内随注入角度的增大，损伤也增大，在4×10¹⁵atom/cm²剂量下偏离〈0001〉沟道0°，4°，6°，9°时的χ_min(%)分别为6.28，8.46，10.06，10.85；经过700℃/10min+1050℃/20s两步退火和1000℃/30s高温快速退火后，晶体的辐射损伤都有一定程度的恢复，而且1000℃/30s高温快速退火的效果更好，晶体的辐射损伤可以得到更好的恢复. 关键词： GaN 卢瑟福被散射/沟道 高分辨X射线衍射 辐射损伤     

Scattering of plasma-jet ions by a tantalum target

The possibility of recording a chemical reaction occurring on the surface of a metal target in a collisionless plasma jet by analyzing the longitudinal-velocity spectra of jet-plasma ions scattered by the target is shown. The target is a Ta strip with a 3×0.1 mm cross section. The ion energy is 30 eV. It is found that, after rapid heating of the target to 1000 K, the current produced by scattered ions decreases and is then restored in a time of 40 s for nitrogen ions and 60 s for hydrogen ions. The relaxation of the current correlates with the accumulation of an intermediate reagent (probably, TaO₂Na⁺ ions) on the target surface; the reagent participates further in the formation of experimentally observed ions with a mass of 245±1 (probably, TaO₂Na⁺ · H₂O).     

A surface analysis of CuAu alloy by leed and Auger electron spectroscopy

Surface structures and compositions of the CuAu alloys have been investigated, which were prepared by depositing gold on (110) and (111) surfaces of copper and by subsequent heating. By this method the structure of alloy surfaces corresponding to different compositions can be observed by LEED. A series of the LEED patterns, streak, (1 × 2), (1 × 1)I, complex, c(3 × 1), (1 × 1)II, (2 × 2) and (1 × 1) have been observed on the (110) surface with decreasing gold composition. On the (111) surface (1 × 1) pattern, weak (2/√3 × 2/√3)R30° and (2 × 2) patterns are observed. The mean surface composition is determined by analysing the data of Auger electron spectroscopy. Most surface periodicities observed are different from those expected if one passes a mathematical plane through the crystal (unreconstructed surface).     

Recrystallization of hexagonal silicon carbide after gold ion irradiation and thermal annealing

Silicon carbide (SiC) single crystals with the 6H polytype structure were irradiated with 4.0-MeV Au ions at room temperature (RT) for increasing fluences ranging from 1?×?10¹² to 2?×?10¹⁵ cm^?2, corresponding to irradiation doses from ~0.03 to 5.3 displacements per atom (dpa). The damage build-up was studied by micro-Raman spectroscopy that shows a progressive amorphization by the decrease and broadening of 6H-SiC lattice phonon peaks and the related growth of bands assigned to Si–Si and C–C homonuclear bonds. A saturation of the lattice damage fraction deduced from Raman spectra is found for ~0.8?dpa (i.e. ion fluence of 3?×?10¹⁴ cm^?2). This process is accompanied by an increase and saturation of the out-of-plane expansion (also for ~0.8?dpa), deduced from the step height at the sample surface, as measured by phase-shift interferometry. Isochronal thermal annealing experiments were then performed on partially amorphous (from 30 to 90%) and fully amorphous samples for temperatures from 200 °C up to 1500 °C under vacuum. Damage recovery and densification take place at the same annealing stage with an onset temperature of ~200 °C. Almost complete 6H polytype regrowth is found for partially amorphous samples (for doses lower than 0.8 dpa) at 1000 °C, whereas a residual damage and swelling remain for larger doses. In the latter case, these unrelaxed internal stresses give rise to an exfoliation process for higher annealing temperatures.     

Structure and electronic properties of antimony films on the Mo(110) surface

The structure and electronic properties of antimony on the Mo(110) surface are investigated over a wide range of coverages. In the submonolayer range, p(2×1), p(1×1), (1×3), and (1×2) adsorbate structures matched to the substrate are formed at room temperature. For coverages larger than a monolayer, three-dimensional antimony crystals whose orientation is determined by the substrate grow on the surface. Annealing of the system at temperatures higher than 1000 K leads to the formation of structures that are not observed upon condensation. The results of analyzing the electron energy-loss spectra jointly with the work function of the surface suggest the formation of surface molybdenum-antimony alloys.     

Magnetic properties of dilute Co impurities in liquid Sn

The susceptibility of dilute Co impurities in liquid Sn is reported. It displays an almost linear increase from 1.8 × 10^?4 cm³/mole at 240°C to 4.5 × 10^?4 cm³/mole at 1000°C. These results are compared with other experimental information and are shown to be consistent with a recently proposed ionic impurity model if an interaction parameter is assumed to be temperature dependent.     

A study of electromigration of nickel in lead

The steady state method was used to study the electromigration of ⁶³Ni in Pb. For the temperature range 180–290°C, and Ni concentration range 0.1–1000 ppm, Ni migrates toward the anode. For dilute samples (0.1 ppm Ni) the effective charge varies linearly with the inverse resistivity from ?6.75 at 188°C to ?4.97 at 289°C. The 1/ρ dependence is given by $\text{Z1 = (1.4 ± 0.3)?(288 ± 13)× 10}{}^{\mathrm{?6}}\text{/ρ}$. The effective charge is a function of the Ni concentration, increasing in magnitude with increasing concentration. For 1000 ppm Ni, |Z1| exhibits a sharp maximum around 260°C; below 230°C electromigration takes place at a much slower rate, probably due to precipitation.     

In situ measurement of high-temperature thermal diffusivity in a combustion-synthesized ceramic

A simple method to calculate thermal diffusivity in situ after a combustion synthesis reaction is presented. The combustion reaction was analyzed via time-resolved X-ray diffraction analysis and infrared thermography. Thermal diffusivity was estimated and used to calculate temperature profiles based on temperature profiles one second earlier. For a sample of TiC formed from Ti and C, a value of 2.00×10^-6±0.20×10^-6 m² s^-1 was calculated for temperatures between 1000 and 1900 K. This method is rapid and can avoid some problems associated with furnace-based measurements of thermal diffusivity, such as recrystallization and destruction of non-equilibrium phases. Received 29 November 2002 / Received in final form 19 March 2003 Published online 23 May 2003 RID="a" ID="a"e-mail: vrel@limhp.univ-paris13.fr RID="b" ID="b"UPR 1311 RID="c" ID="c"UMR 6630     

Thermal expansion and phase changes of 16Kh12V2FTaR steel in temperature range from 20 to 1000 °C

The article presents the results of investigation of thermal expansion of 16Kh12V2FTaR steel in the temperature range 20–1000 °C. Measurements were carried out by dilatometric method with the error (1.5–2)×10^?7 K^?1. The temperature dependences of thermal coefficient of linear expansion of steel have been obtained in ferrite-martensite and ferrite-perlite states, and reference tables have been calculated. Influence of samples cooling rate on martensite phase formation is shown.     

Design of an ultrahigh‐energy‐resolution and wide‐energy‐range soft X‐ray beamline

A new ultrahigh‐energy‐resolution and wide‐energy‐range soft X‐ray beamline has been designed and is under construction at the Shanghai Synchrotron Radiation Facility. The beamline has two branches: one dedicated to angle‐resolved photoemission spectroscopy (ARPES) and the other to photoelectron emission microscopy (PEEM). The two branches share the same plane‐grating monochromator, which is equipped with four variable‐line‐spacing gratings and covers the 20–2000 eV energy range. Two elliptically polarized undulators are employed to provide photons with variable polarization, linear in every inclination and circular. The expected energy resolution is approximately 10 meV at 1000 eV with a flux of more than 3 × 10¹⁰ photons s^?1 at the ARPES sample positions. The refocusing of both branches is based on Kirkpatrick–Baez pairs. The expected spot sizes when using a 10 µm exit slit are 15 µm × 5 µm (horizontal × vertical FWHM) at the ARPES station and 10 µm × 5 µm (horizontal × vertical FWHM) at the PEEM station. The use of plane optical elements upstream of the exit slit, a variable‐line‐spacing grating and a pre‐mirror in the monochromator that allows the influence of the thermal deformation to be eliminated are essential for achieving the ultrahigh‐energy resolution.     

Surface crystallography of W(110) and W(110) p (2×1)-O: The position of W atoms

The position of W atoms in the surface layers of clean W (110) and W (110) p (2 × 1)-O is studied using Constant-Momentum-Transfer Averaging of LEED intensities. It is shown that the clean surface is not relaxed to an uncertainty of < 0.06 Å. Analysis of superstructure beam intensity averages from W(110) p (2 × 1)-O indicates that oxygen does not reconstruct W(110) at these coverages and below 1000 ° K. An upper limit of 0.05 Å can be put on the out-of-plane displacement of W atoms by the oxygen. Substrate beam averages from W (110) p (2 × 1)-O verify the non-reconstruction. The use of CMTA for adsorbed-layer crystallography in general is briefly discussed.     

平面元件数控加工技术研究

利用从俄罗斯引进的ＡＤ １０００ 数控研磨抛光机对Φ３３０ｍｍ ×３５ｍ ｍ 、２３０ｍ ｍ ×２３０ｍ ｍ ×４０ｍ ｍ 两块Ｋ９材料平面光学元件进行计算机控制抛光工艺研究。通过工艺研究全面熟悉了设备的技术特性和工艺软件特性,验证了ＡＤ １０００ 数控研磨抛光机在加工高精度光学元件基板方面Ｐ Ｖ、ＲＭＳ值收敛效果明显,较传统加工方法在效率上有极大提高。