托卡马克离子温度梯度湍流输运同位素定标修正中杂质的影响

托卡马克实验发现,在不同参数条件下,等离子体能量约束经验定标律会有或大或小的修正.为解释这种修正现象发生的原因,应用回旋动理学方法,对含重(钨)杂质等离子体离子温度梯度(ITG)(包括杂质模)湍流输运的同位素效应进行了数值研究.结果表明钨杂质效应极大地修改了同位素定标律和有效电荷效应.随着杂质离子电荷数Z和电荷集中度f_z的变化,同位素定标律在较大范围内变化. ITG模最大增长率定标大约为M_i~(-0.48→-0.12),杂质模的定标为M_i~(-0.46→-0.3),其中, M_i表示主离子质量数.在ITG模湍流中,有效电荷数越大,关于M_i的拟合指数偏离-0.5越远,表现为同位素质量依赖减弱.在两种模中,杂质电荷集中度越大,同位素质量依赖越弱.研究了杂质效应使定标关系发生偏离的原因,证实杂质种类、杂质电荷数和杂质浓度的不同,是引起同位素质量依赖发生改变的重要原因.结果证实并解释了不同参数条件下托卡马克同位素定标的差异性.研究成果可以为ITER实验安排及杂质相关输运实验中选择装置材料、工作气体和设置其他参数提供理论参考.     

HL-2A装置孔栏位形下激光吹气注入杂质的初步实验结果

在聚变堆条件下，等离子体中杂质将严重影响燃料的浓度，并产生大量的功率损失而倍受关注。普遍用于托卡马克等离子体杂质输运研究的方法是瞬态扰动法，主要以主动注入杂质源来研究杂质的扩散和对流过程。短脉冲型的杂质注入一般可采用快过程的压电阀和激光吹气两种方式，而激光吹气方法是一种不容置疑的最好的杂质输运研究方法，因为杂质的注入时间和注入量都可以得到很好的控制，几乎能研究任何状态的等离子体杂质输运过程并对等离子体参数的扰动最小。杂质输运信息可通过探测杂质离子的辐射来得到，这些辐射主要包括由光谱仪测量的线辐射信号和由软X射线成像技术得到的软X射线辐射信号，通过这些测量可带出杂质分布的空间和时间演化的信息，再利用数值模拟计算编码，重建实验数据，从而得到杂质输运的扩散系数D、对流速度V和约束时间等。     

HL－1托卡马克杂质注入实验及杂质输运特性的研究

本文给出了ＨＬ－１托卡马克在通常欧姆放电和偏压诱发Ｈ模放电条件下，脉冲注入杂质气体的实验结果以及对杂质在通常欧姆等离子体和偏压诱发Ｈ模等离子体中的输运研究结果。实验结果表明，在ＨＬ－１上偏压诱发Ｈ模等离子体中对杂质的约束性能明显优于在通常欧姆等离子体中对杂质的约束性能。杂质输运的数值模拟结果说明，无论在通常欧姆等离子体中，还是在偏压诱发Ｈ模等离子体中，杂质的输运系数都比新经典理论预计的要大得多，输运是反常的。在偏压诱发的Ｈ模等离子体中引入杂质输运“位阱”概念，能够对杂质离子约束时间长的实验现象进行很好的描述。合理地解释了在偏压杂质注入实验中杂质辐射上升时间长、衰减慢的现象。     

Hα线型分析

利用高斯分布拟合HT-6M托卡马克Hα线型，得出了由反射进入等离子体中的氢原子、氢分子离解后产生的氢原子，以及电荷交换产生的氢原子辐射Ｈα谱线的份额，由Doppler频移和展宽分别得出它们的入射速度和离子温度．在简化模型下讨论了氢原子的输运行为，得出了氢原子的密度分布和体发射系数，以及入射速度大小对粒子约束时间的影响，并与实验数据进行比较．由中性氢原子能量分布得出发生在边界的分子过程是氢分子的离解激发和电离离解 关键词：     

HL—1装置电流上升段辐射与杂质特性

托卡马克等离子体中的杂质会影响托卡马克的放电品质及等离子体特性。许多理论和实验对杂质的产生和输运做了深入详细的研究。等离子体电流起始阶段,由于约束性能不好,会引起大量的杂质产生,辐射损失增大是杂质增加引起的直接后果。杂质辐射是等离子体辐射的主要组成部分之一,等离子体线辐射功率～Z_(eff)~6,复合辐射功率～Z_(eff)~4,轫致辐     

利用可见轫致辐射计算EAST有效电荷数

利用弦积分的可见轫致辐射计算了先进实验超导托卡马克(EAST)的有效电荷数。对比分析EAST硼化前后的杂质含量,硼化后有效电荷数减小约40%,碳杂质含量减小约50%。统计分析了2009年EAST春季实验的有效放电,显示有效电荷数与碳杂质线辐射量存在很强的线性关系,得到的拟合系数是3.4~5.8,与等离子体电流和低杂波辅助加热功率都有明确的依赖关系。利用近紫外可见波段全谱对主要杂质的含量进行比较后显示,碳是最主要的杂质,大于其它轻杂质含量。同时,还介绍了新建成的多道轫致辐射诊断系统。     

HT—6M托卡马克欧姆加热下氧杂质的输运模拟

本文利用HT-6M托卡马克上现有的实验数据,对氧杂质进行了输运模拟,给出了HT-6M托卡马克在欧姆加热下氧杂质的输运特性,空间分布和辐射能量。     

HL-2A装置上ECRH实验的初步结果和电子热输运分析

电子回旋共振加热（ECRH）是托卡马克等离子体一种最常用的辅助加热手段，也是进行等离子体电子热输运和约束性能研究的一种有效手段。本文介绍了HL-2A装置上ECRH实验的初步结果，分析了在ECRH实验期间的电子热输运特征和约束情况。     

HL-2A装置等离子体边缘的单探针快采测量

托卡马克装置等离子体边缘和刮离层(SOL)物理的实验和理论研究是目前聚变装置中等离子体的杂质含量、杂质源分布以及SOL和芯部等离子体中各种杂质输运过程研究的重要课题之一。等离子体表面相互作用导致杂质的产生和随后杂质传输以及对芯部等离子体的污染。在孔栏和偏滤器靶板表面上易产生的离子通量的电荷态和能量通过物理贱射是确定杂质释放大小的最重要因素，而化学贱射是取决于表面形成的元素、碰撞的等离子体和表面温度。杂质传输强烈地取决于刮离层等离子体的背景特征，如温度、密度、传输效率和流速。     

EAST上磁位形和杂质对束离子约束和加热影响的数值模拟

利用程序ORBIT和TRANSP/NUBEAM模拟研究全超导托卡马克实验装置(EAST)等离子体位形和杂质的特征参数Z_eff(有效电荷数)对束离子约束和加热的影响。结果表明：在等离子体位形中,随着最后一个封闭通量表面与中面外容器壁之间的距离(gapout)和环向磁场强度的增加,快离子的损失(包含瞬时损失和波纹损失)也随之减少,因此中性束的加热效率随着gapout的增加而提高。此外,随着背景等离子体杂质的增加(即Z_eff的增加),增加了束损失,导致最后束加热效率降低。选择合适的磁位形,同时降低背景的杂质含量可以增强快离子约束,提高束的加热效率。     

VUV信号强度与等离子体宏观参数相关性分析

东方超环(EAST)上高速真空紫外(VUV)成像系统是一套选择性测量中心波长为13.5 nm的等离子体线辐射的光学成像系统。此系统具有高时空分辨能力,主要用于边界(包括台基区)等离子体行为研究。该系统已经投入EAST等离子体物理实验并获得了大量的实验数据。基于这些数据,分析了VUV诊断系统的信号强度与等离子体宏观参数之间的相关性,着重研究了EAST上中性束注入(NBI)加热功率、杂质(碳和锂)水平、电子密度等因素对VUV信号强度的影响。结果与预期基本一致:随着NBI功率的增加,VUV信号强度随之增强;VUV信号强度与电子密度、杂质水平呈现线性关系。此外,本文还评估了由于NBI注入引起的电荷交换复合产生的C5+离子对VUV信号的贡献,结果表明这部分贡献可以忽略不计。     

Local mode sideband IR absorption and second harmonic intensity calculation for various isolated impurities in GaAs

We have calculated the intensity and shape of the local mode sidebands and the second harmonic intensity for various isolated impurities in GaAs. To calculate the absorption we have considered the second order dipole moment in the harmonic approximation. The absorption depends on the values of the impurity charge and polarizability, on the corresponding quantities for the nearest neighbours of each impurity and on a charge migration factor. The latter accounts for charge variations during the motion. Although these quantities vary from impurity to impurity, the results are presented in a general form valid also for other impurities. The point group symmetry properties are used in order to give a physical meaning to the results. The effects on the dynamical properties from the mass defect and the local changes in the force constant are also taken into account.     

HT-7低杂波电流驱动效率与有效电荷数及电子温度的关系

在HT-7超导托卡马克中进行了低杂波电流驱动的功率扫描实验,功率变化范围为100kW至700kW,频率为2.45GHz。研究了等离子体平均有效电荷数及电子温度与低杂波功率之间的关系。给出了不同功率下低杂波电流驱动效率与有效电荷数及电子温度之间的关系:HT-7装置低杂波驱动效率与电子温度成正比,与有效电荷数成反比。指出了动态杂质控制是改善低杂波电流驱动效率的关键问题。     

Vacuum polarization and screening of supercritical impurities in graphene

Screening of charge impurities in graphene is analyzed using the exact solution for vacuum polarization obtained from the massless Dirac-Kepler problem. For the impurity charge below a certain critical value, no density perturbation is found away from the impurity, in agreement with perturbation theory. For the supercritical charge, however, the polarization distribution is shown to have a power law profile, leading to screening of the excess charge at large distances. The Dirac-Kepler scattering states give rise to standing wave oscillations in the local density of states which are prominent in the supercritical regime.     

Electronic structure of non-magnetic impurities in dilute alloys of Al

The electronic structure of substitutional non-magnetic impurities Cu, Ag, Cd, Mg, Zn, Ga, In, Ge, Si and Sn in Al is studied using density functional theory. A simple physical model is proposed to calculate the effective charges on impurities in trivalent metal Al. A linear relation is found between the effective charges on impurities and impurity vacancy capture radii. The spherical solid model (SSM) is used to account for discrete nature of the host. The impurity-induced change in charge density, scattering phase shifts, host-impurity potential, residual resistivity and impurity self-energy are calculated. Higher order scattering phase shifts are found significant and the host-impurity potential is found proportional to effective charge on impurity in its vicinity. The self-consistently calculated potential is used to calculate the electric field gradients (EFGs) at the first and second nearest neighbours (1NNs, 2NNs) of impurity. The calculated values are in agreement with the experimental results.     

硅纳米结构晶体管中与杂质量子点相关的量子输运

在小于10 nm的沟道空间中,杂质数目和杂质波动范围变得十分有限,这对器件性能有很大的影响.局域纳米空间中的电离杂质还能够展现出量子点特性,为电荷输运提供两个分立的杂质能级.利用杂质原子作为量子输运构件的硅纳米结构晶体管有望成为未来量子计算电路的基本组成器件.本文结合安德森定域化理论和Hubbard带模型对单个、分立和耦合杂质原子系统中的量子输运特性进行了综述,系统介绍了提升杂质原子晶体管工作温度的方法.     

Effect of phonon scattering from neutral and charged impurity centers on the lattice heat conductivity of PbTe:(Tl, Na)

Experimental data on the effect of thallium and sodium impurities on the lattice heat conductivity of PbTe at room temperature are reported. Because the lattice of lead chalcogenides is strongly polarized near charged impurities, the effect of impurities on the lattice heat conductivity depends substantially on their charge state. This property of the material has been used to determine the charge state of the thallium impurity in PbTe. The results obtained argue for a model of quasi-local thallium-impurity states which assumes low electron-correlation energy at an impurity center. Fiz. Tverd. Tela (St. Petersburg) 40, 1206–1208 (July 1998)     

贫铀药型罩材料中微量杂质对聚能射流性能的影响

 通过对贫铀药型罩的静破甲实验，研究了材料中微量元素对射流性能的影响。实验结果表明，贫铀中的碳含量对射流性能起着非常重要的作用，随着碳含量的增加，静破甲威力下降十分显著。最后讨论了有害微量杂质对射流造成影响的原因，指出有害杂质可以以点缺陷形式或向晶界偏聚的形式存在于材料中，它们对材料的滑移变形均起到阻碍作用，其结果造成材料延展性能下降。     

Study of multiple impurity seeding effect using SONIC integrated divertor code for JT-60SA plasma prediction

In order to study the potential impurity seeding operation regime of the future fusion devices, the first application of the integrated divertor code SONIC to the Ar + Ne mixed-impurity seeding operation of JT-60SA steady-state high-β plasma has been carried out. In the case, Ne is added to Ar-only seeding, the separatrix electron density has fell into the desired low separatrix electron density of the scenario. This is mainly because the D⁺ flow velocity towards the inner divertor has been increased by the Ne seeding. The resultant friction force transports Ar impurities towards the inner divertor region, while impurities are stagnated in the top of scrape-off layer (SOL) in the Ar-only seeding case. The higher impurity radiation power in the divertor regions and lower one in the SOL region above the X point have been obtained in mixed-impurity seeding cases, which show similar tendency as the Ar + Ne mixed-impurity seeding experiment in JT-60 U. At the core edge, Z_eff has been slightly increased and the radiation power has been decreased as the Ne seeding rate increases. The core plasma/impurity transport has been also evaluated by the TOPICS code using the impurity density at the core edge computed by the SONIC as a boundary parameter. The results show lower Z_eff and radiation power, and higher electron temperature in the core in the mixed-impurity seeding cases. Above possible contributors to the better energy confinement indicate that the mixed-impurity seeding operation might be more effective than Ar-only seeding operation.     

Local impurity phase pinning and pinning force in charge density waves

Starting from the static Fukuyama-Lee-Rice equation for a three-dimensional incommensurate charge density wave (CDW) in quasi one-dimensional conductors a solvable model for local phase pinning by impurities is defined and studied. We find that average CDW energy and average pinning force show critical behaviour with respect to the pinning parameter h. Specifically the pinning force exhibits a threshold at h=1 with exponent . Our model exemplifies a general concept of local impurity pinning in which the force exerted by the impurity on the periodic CDW structure becomes multivalued and metastable states appear beyond a threshold. It is found that local impurity pinning becomes less effective at low temperatures and may eventually cease completely. These results are independent of spatial dimensionality as expected for local impurity pinning. Comparison with Larkin's model is also made. Received 8 July 1998