砷化镓离子团簇的稳定性研究

采用全势能线性糕模轨道分子动力学方法，详细研究了砷化镓离子团簇Ga_nAs_n(n=4，5，6)的几何结构和稳定性.分别找到了这些离子团簇的最低能量结构，通过计算发现这些结构明显不同于中性团簇的基态结构.还发现离子团簇的其他稳定结构与对应的中性结构相比也有较大的结构畸变.在这些砷化镓离子团簇中，相对于砷原子而言，镓原子更容易处在帽原子的位置上. 关键词： 离子团簇 基态结构 稳定性     

Theoretical study on the composition dependence of Ga8−nAsn (n=0-8) clusters

Using full-potential linear-muffin-tin-orbital molecular-dynamics (FP-LMTO-MD) method, we have investigated the dependence of GaAs clusters with eight atoms on composition. It is found that the ground state structures for Ga-rich and As-rich clusters are cube structures. As the ratio between gallium atoms and arsenic atoms is close to one, structural distortion become increasingly severe, or even the clusters adopt other geometrical configurations as their ground state structures. The energy gap E_g between the highest-occupied molecular orbital (HOMO) and the lowest-unoccupied molecular orbital (LUMO), and the vertical electron affinity show a certain degree of even/odd alternation with cluster composition. Among nine Ga_8−nAs_n (n=0-8) clusters, only a few of clusters have different energy orders between the ionic and neutral isomers with large binding energy. Some ionic structures would change into other configurations due to severe structural distortion.     

Ga6N6团簇结构性质的理论计算研究

在密度泛函理论的基础上，对Ga₆N₆团簇进行了第一性原理、全电子、从头计算，得到了10种可能的三维空间结构及其电子结构.其中最稳定结构的一对GaN原子的平均结合能为9.748 eV，因此是可能存在的.但与他人计算的Ga₃N₃和Ga₅N₅相比，Ga₆N₆团簇可能不属于“幻数”团簇.最稳定结构的Ga₆N_{6 关键词： GaN 团簇 电子结构}     

Study of the stable structures of Ga6As6 cluster using FP-LMTO MD method

We have investigated the structures and energies of a Ga₆As₆ cluster using full-potential linear-muffin-tin-orbital molecular-dynamics calculations. 9 stable structures were obtained for a Ga₆As₆ cluster, including the structure, a cube with two capped Ga–As pairs considered by Yi (Chem. Phys. Lett. 325 (2000) 269), who used the Car–Parrinello method based on the pseudopotential method and the local density functional formalism. However, the ground state we obtained is a distorted structure of a bicapped pentaprism, the energy of which is lower than that of Yi. Furthermore, we found the structure a1 presented semiconductor-like properties through the calculation of the density of states.     

平面结构Ga5N5团簇电子结构的第一性原理计算研究=

用基于密度泛函理论的第一性原理、全电子、从头算法研究了Ga5N5团簇的一个奇异的稳定平面结构，给出其电子结构、电子亲和势、电离能和结合能。计算结果显示Ga5N5团簇的该平面结构是稳定的，没有自旋磁矩。计算发现在团簇的N3基团中的结合在一起的三个氮原子间有大的电荷转移，尽管没有自由的N3分子能存在。这也许对Ga5N5团簇的具有最低基态能量的该平面结构的稳定性是重要的。     

POWDER NEUTRON DIFFRACTION STUDIES OF THE CRYSTALLOGRAPHIC AND MAGNETIC STRUCTURE OF Ho2Fe9Ga8 and Ho2Fe9Ga6AI2

The crystallographic and magnetic structures of Ho₂Fe₉Ga₈ and Ho₂Fe₉Ga₆AI₂ were studied by powder neutron diffraction at room temperature. The atom fractional occupancies of Ga and Al and the magnetic moments of Ho and Fe were obtained by using Rietveld analysis program. The magnetic structures of the two samples show an easy-axis anisotropy, with the Fe magnetic moment being ferrimagneticlly coupled to those of Ho.     

Prediction of enhanced ferromagnetism in (Ga,Mn)As by intrinsic defect manipulation

In the diluted magnetic semiconductor (Ga,Mn)As the excess of As incorporated as As antisites (As_Ga) is responsible for the hole compensation. The As_Ga defect can be transformed into a As interstitial–Ga vacancy pair (As_i–V_Ga) upon illumination. In this paper we study the effects of such a transition on the ferromagnetism of (Ga,Mn)As using density functional theory within the local spin density approximation. We find that the ferromagnetic order in (Ga,Mn)As is strongly enhanced if As_Ga are transformed into As_i–V_Ga pairs, since the hole compensation is reduced. This suggests a valuable way to tune the carrier concentration and hence the T_c in (Ga,Mn)As, without changing the Mn concentration nor the microscopic configuration of the Mn ions.     

Novel RCo5Ga7 intermetallic compound

The novel RCo₅Ga₇ (R=Y, Tb, Dy, Ho and Er) intermetallic compounds have been synthesized, and their crystallographic and magnetic properties have been studied using X-ray diffraction and magnetic measurement. RCo₅Ga₇ crystallizes in an orthorhombic structure with ScFe₆Ga₆ type. The space group is Immm, and Z=2. According to the structural refinement result, the 2a, 4e, 4f, 4g, 4h, and 8k crystal positions are occupied by 2R, 4Ga^I, 4(Ga^II, Co^I), 4Ga^III, 4(Ga^IV,Co^II), and 8(Co^III,Ga^V), respectively. The RCo₅Ga₇ intermetallic compound can be stabilized in the range of the radius ratio of R_Re/R_(Co,Ga)<1.36. The RCo₅Ga₇ compound exhibits a paramagnetic behavior. The magnetization at 5 K ranges from 28.93 to 40.62 emu/g.     

Ga填充n型方钴矿化合物的结构及热电性能

用熔融退火结合放电等离子烧结(SPS)技术制备了具有不同Ga填充含量的Ga_xCo₄Sb₁₂方钴矿化合物,研究了不同Ga含量对其热电传输特性的影响规律. Rietveld结构解析表明,Ga占据晶体学2a空洞位置,Ga填充上限约为0.22,当Ga的名义组成x≤0.25时,样品的电导率、室温载流子浓度N_p随Ga含量的增加而增加,Seebeck系数随Ga含量的增加而减小. 室温下霍尔测试表明,每一个Ga授予框架0.9个电子,比Ga的氧化价态Ga³⁺小得多. 由于Ga离子半径相对较小,致使Ga填充方钴矿化合物的热导率κ及晶格热导率κ_L较其他元素填充的方钴矿化合物低. 当x＝0.22时对应的样品在300K时的热导率和晶格热导率分别为3.05Wm^-1·K^-1和 2.86Wm^-1·K^-1.在600K下Ga_0.22Co_4.0Sb_12.0样品晶格热导率达到最小,为1.83Wm^-1·K^-1,最大热电优值Z,在560K处达1.31×10^-3K^-1. 关键词： skutterudite化合物 Ga原子填充 结构 热电性能     

Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms

Contactless electroreflectance (CER) spectroscopy has been applied to investigate the optical transitions in Ga(In)NAs/GaAs quantum well (QW) structures containing Sb atoms. The identification of the optical transitions has been carried out in accordance with theoretical calculations which have been performed within the framework of the effective mass approximation. Using this method, the bandgap discontinuity for GaN_0.027As_0.863Sb_0.11/GaAs, Ga_0.62In_0.38As_0.954N_0.026Sb_0.02/GaAs, and Ga_0.61In_0.39As_0.963N_0.017Sb_0.02/GaN_0.027As_0.973/GaAs QW structures has been determined. It has been found that the conduction-band offset is ∼50 and ∼80% for GaN_0.027As_0.863Sb_0.11/GaAs and Ga_0.62In_0.38As_0.954N_0.026Sb_0.02/GaAs QWs, respectively. It corresponds to 264 and 296 meV depth QW for electrons and heavy-holes in GaN_0.027As_0.863Sb_0.11/GaAs QW; and 520 and 146 meV depth QW for electrons and heavy-holes in Ga_0.62In_0.38As_0.954N_0.026Sb_0.02/GaAs QW. In the case of the Ga_0.61In_0.39As_0.963N_0.017Sb_0.02/GaN_0.027As_0.973/GaAs step-like QW structure it has been shown that the depth of electron and heavy-hole Ga_0.61In_0.39As_0.963N_0.017Sb_0.02/GaN_0.027As_0.973 QW is ∼144 and ∼127 meV, respectively.     

Structural changes of piezoelectric La3Ga5SiO14 induced by paramagnetic ions revealed by Ga multiple quantum magic angle spinning

Experimental evidence that nuclear magnetic resonance (NMR) can detect structural changes of piezoelectric La₃Ga₅SiO₁₄ induced by dilute paramagnetic ions is presented. Gd³⁺ and Eu³⁺ cations have been incorporated into La₃Ga₅SiO₁₄ monocrystals. As expected, the line-width of the tetrahedral ²⁹Si magic angle spinning (MAS) NMR spectra as well as the inverse of the T₂ relaxation time of ⁷¹Ga increases with the concentration of the paramagnetic ions. A surprising result is shown by ⁷¹Ga multiple quantum (MQ) MAS NMR spectrum, which changes with the concentration of paramagnetic ions. The changes in the ⁷¹Ga MQMAS spectra can be explained by a more ordonated distribution of Ga ions inside the oxygen tetrahedra. The ⁷¹Ga MQMAS NMR spectra allow identification of the one octahedral and two tetrahedral Ga sites.     

Rh_nBe(n=1～7)团簇结构和磁性的密度泛函研究

用密度泛函理论中的广义梯度近似方法研究了Rh_nBe(n=1～7)团簇的结构和磁性.结果表明:在Rh_n团簇上附加一个Be原子后,对Rh_n团簇的结构影响不大,与Be原子相配位的Rh原子间的键长发生了不同程度的增大.Rh_nBe与Rh_n团簇的稳定性变化趋势相一致,但Rh_nBe团簇更加稳定.Be原子均失去电子,磁矩相对较小.与Be原子相配位的Rh原子均是电子受体.团簇磁矩主要来自Rh原子的贡献;若Be原子呈正磁矩,则Rh_nBe团簇的总磁矩大于Rh_n团簇的磁矩,反之则小于Rh_n团簇的磁矩.     

RhnBe(n=1-7)团簇结构和磁性的密度泛函研究

用密度泛函理论中的广义梯度近似方法研究了RhnBe(n=1~7)团簇的结构和磁性。结果表明：在Rhn团簇上附加一个Be原子后,对Rhn团簇的结构影响不大,与Be原子相配位的Rh原子间的键长发生了不同程度的增大。RhnBe 与Rhn团簇的稳定性变化趋势相一致,但RhnBe团簇更加稳定。Be原子均失去电子,磁矩相对较小。与Be原子相配位的Rh原子均是电子受体。团簇磁矩主要来自Rh原子的贡献;若Be原子呈正磁矩,则RhnBe团簇的总磁矩大于Rhn团簇的磁矩,反之则小于Rhn团簇的磁矩。     

Neutron diffraction study on composite compound Nd2Co7

The crystallographic and the magnetic structures of the composite compound Nd₂Co₇ at 300 K are investigated by a combined refinement of X-ray diffraction data and high-resolution neutron diffraction data. The compound crystallizes into a hexagonal Ce₂Ni₇-type structure and consists of alternately stacking MgZn₂-type NdCo₂ and CaCu₅-type NdCo₅ structural blocks along the c axis. A magnetic structure model with the moments of all atoms aligning along the c axis provides a satisfactory fitting to the neutron diffraction data and coincides with the easy magnetization direction revealed by the X-ray diffraction experiments on magnetically pre-aligned fine particles. The refinement results show that the derived atomic moments of the Co atoms vary in a range of 0.7 μ_B-1.1 μ_B and the atomic moment of Nd in the NdCo₅ slab is close to the theoretical moment of a free trivalent Nd³⁺ ion, whereas the atomic moment of Nd in the NdCo₂ slab is much smaller than the theoretical value for a free Nd³⁺ ion. The remarkable difference in the atomic moment of Nd atoms between different structural slabs at room temperature is explained in terms of the magnetic characteristics of the NdCo₂ and NdCo₅ compounds and the local chemical environments of the Nd atoms in different structural slabs of the Nd₂Co₇ compound.     

第一性原理对GanPm小团簇的结构及稳定性的研究

利用密度泛函理论（DFT）对Ga_nP和Ga_nP₂ (n=1—7)团 簇的几何结构、电子态及稳定 性进行了研究. 在B3LYP/6-31G^*水平上进行了结构优化和频率分析，得到了Ga _nP和Ga_nP₂(n=1—7) 团簇的基态结构. 结果表明，n≤ 5团簇的几何结构基本上为平面结构，n ＞ 5的团簇均为立体结构；在Ga_nP₂ (n=1—6)团簇中，P-P比Ga-P容易 成键；在Ga_nP和G a_nP₂ (n=1—7) 团簇中，Ga₃P, Ga₄P, Ga P₂, Ga₂P₂ 和 Ga₄P₂的基态结构最稳定，在所研究的团簇中，稳定性随团簇总原 子数的增大而减小. 关键词： nP_m团簇')" href="#">Ga_nP_m团簇 密度泛函理论（DFT） 几何结构 电子态     

On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV _Ga ^2– and the triply positively charged defect complex (AS_Ga+V _As)³⁺, with As_Ga being the antisite defect of an As atom occupying a Ga site andV _As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV _Ga ^2– /(As_Ga+V _As)³⁺ is supposed to be able to pin the GaAs Fermi level at approximately theE _v +0.6 eV level position, which requires that the net free energy of theV _Ga/(As_Ga+V _As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE _v +1.2 eV level position instead of the neededE _v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.     

Esca studies of Ga,As, GaAs,Ga2O3, As2O3 and As2O5

The binding energies of Ga 3d, As 3d, Ga L₃M₄,₅M₄,₅ and O 1s in Ga, As, GaAs, Ga₂O₃, As₂O₃ and As₂O₅ are reevaluated by means of ESCA. The calibration lines of the C 1s and the Au 4f_{$\text{7}\text{2}$} gave different binding energies for the compound materials. In order to determine the absolute binding energies, the chemical shifts in Auger and photoelectron lines from a layered structure composed of thin layer oxide and substrate of a defined material were used. An energy calibration curve, E(Ga 3d) vs. ΔE(GA LMM - Ga 3d), was found to be useful for determination of binding energies in the material which contains gallium. In the case of the GaAs sample, both the chemical etching and the ion bombardment effects on the chemical structure of the GaAs surface are also discussed.     

Antiferromagnetism of perovskite EuZrO3 from a first-principles study

Electronic structure and magnetic properties of perovskite EuZrO₃ have been investigated using the ab initio density-functional calculations with local spin density approximation (LSDA) and LSDA+U methods. The results that are obtained reveal that the antiferromagnetic G-type arrangement is more stable than other possible configurations. The ground G-AFM state shows the insulator property with an energy gap of about 0.27 eV at U=0 eV. It is found that the energy gap strongly depends on the correction potential parameter of U due to the strong interaction of the f electrons of Eu in EuZrO₃. The spin magnetic moment of Eu ions is predited to be 6.82μ_B, which is in well agreement with the experimental result of 6.87μ_B.     

Magnetic and transport properties of bilayered manganites La1.2Sr1.8Mn2-xGaxO7（x=0,0.08）

The magnetic and electrical properties of nonmagnetic Ga +3 ion substitution for Mn site are investigated in the bilayer manganite La 1.2 Sr 1.8 Mn 2 O 7.When the Mn is substituted by Ga,the ferromagnetic property obviously weakens,the magnetic transition temperature decreases and a spin-glass behaviour occurs at low temperature.Meanwhile,doping causes the resistivity to dramatically increase,the metal-insulator transition temperature to disappear,and a greater magneto-resistance effect to occur at low temperature.These effects result from the fact that Ga substitution dilutes the magnetic active Mn-O-Mn network and weakens the double exchange interaction,and further suppresses ferromagnetic ordering and metallic conduction.     

Rh_nAl(n=1～6)团簇结构和磁性的研究

用密度泛函理论中的广义梯度近似方法研究了Rh_nAl(n=1～6)团簇的结构和磁性.结果表明:Rh(_n-1)Al和Rh_n(n=2～7)团簇结构是相似的,结合能随团簇尺寸变化趋势一致,原子间的s,p,d轨道杂化使得Rh_nAl团簇更加稳定.几乎所有Rh原子都是电子受体,Al-Rh键长越小.Rh原子得电子就越多.团簇磁矩主要来自Rh原子的贡献,Rh原子的4d轨道磁矩是Rh原子磁矩的主要部分.Al原子失去的电子越多,则其磁矩就相对越小.