Electron stimulated desorption of O2 from gadolinia-doped ceria surfaces

The interactions of gas phase oxygen with gadolinia-doped ceria (GDC) surfaces are investigated by electron stimulated desorption (ESD). The primary desorbed cationic species related to molecular oxygen adsorption is O₂⁺. The threshold energy for ESD of O₂⁺ is 13–14 eV, indicating electron impact ionization of molecular oxygen bound at oxygen vacancies. Dependence of O₂⁺ velocities upon incident electron energy and substrate temperature reveals the dominant influence of the effective charge of the adsorption complex. The O₂⁺ velocity distribution is bimodal, and the onset of the faster components at room temperature is related to the balance between fluxes of incident electrons and secondary electron emission, causing effective hole production and neutralization of trapped electrons at surface states.     

Cesium ion sputtering with oxygen flooding: Experimental SIMS study of work function change

We investigated the work function (WF) change of a silicon surface being under cesium ion bombardment and simultaneous oxygen flooding with various oxygen pressures at the sample surface. It was found that WF of Cs⁺ ion sputtered Si decreases under oxygen flooding. This decrease provides an essential grow of secondary ion yields of some negative ions, sputtered from Si. At the same time Si⁻ ion yield decreases approximately in two times. In the paper we have discussed possible explanations of our experimental data: we considered a surface composition change, formation of surface dipoles and work function change caused by oxygen adsorption, and their relationships between each other.     

Axial energy distributions of Li and F desorbed from LiF surfaces by fast ion impact

Initial axial kinetic energy (E_z) distributions of Li⁺ and F⁻ secondary ions desorbed from LiF surfaces, bombarded by low current (500 particles/s) N³⁺ beams in the 0.075–7.5 MeV primary ion energy (E_PI) range, were measured by using the time-of-flight technique. In this energy range, the electronic energy loss, S_e, increases from 25 to 160 eV/Å, while the nuclear stopping power, S_n, decreases from 8.0 to 0.25 eV/Å. The observed F⁻ initial axial kinetic energy distribution can be described by the linear collision cascade theory and no other contribution was found. The F⁻ total yield decreases proportionally to S_n. The Li⁺ distribution presents a remarkable deviation from the cascade prediction, indicating the existence of additional mechanisms related to the electronic energy-loss process. For the range of E_PI studied, these mechanisms produce a Li⁺ energy distribution with a Maxwell-Boltzman-like shape, which vanishes above E_z 10 eV and presents a maximum at E_z 1.2 eV. The Li⁺ yield is nonlinear with the electronic energy loss, S_e. A simple desorption model, based on the spatial distribution of the energy deposited by the projectile and on the effective energy-loss concept, is presented. This spatial distribution of the deposited energy is due to secondary electron cascades and is connected with a ESD-like mechanism on the surface.     

Oxygen diffusion and surface exchange in La1−xSrxFe0.8Cr0.2O3−δ (x=0.2, 0.4 and 0.6)

Oxygen tracer diffusion (D*) and surface exchange rate constant (k*) have been measured, using isotopic exchange and depth profiling by secondary ion mass spectrometry (SIMS), in La_1−xSr_xFe_0.8Cr_0.2O_3−δ (x=0.2, 0.4 and 0.6). Measurements were made as a function of temperature (700–1000 °C) and oxygen partial pressure (0.21–10⁻²¹ atm) in dry oxygen, water vapour and water vapour/hydrogen/nitrogen mixtures. At high oxygen activity, D* was found to increase with increasing temperature and Sr content. The activation energies for D* in air are 2.13 eV (x=0.2), 1.53 eV (x=0.4) and 1.21 eV (x=0.6). As the oxygen activity decreases, D* increases as expected qualitatively from the increase in oxygen vacancy concentration. Under strongly reducing conditions, the measured values of D* at 1000 °C range from 10⁻⁸ cm² s⁻¹ for x=0.2 to 10⁻⁷ cm² s⁻¹ for x=0.4 and 0.6. The activation energies determined at constant H₂O/H₂ ratio are 1.21 eV (x=0.2), 1.59 eV (x=0.4) and 0.82 eV (x=0.6).

The surface exchange rate constant of oxygen for the H₂O molecule is similar in magnitude to that for the O₂ molecule and both increase with increasing Sr concentration.     

Luminescence of [Be] centre in MgO:Be

Doping of MgO single crystals with Be results in the formation of numerous Be-containing paramagnetic centres, easily detectable by EPR, and creates an intensive luminescence band at 6.2 eV, observable at T<200 K, and gives rise to new thermoluminescence peaks at 147 and 190 K. A paramagnetic centre with a rhombic symmetry that decays at 160 K was identified as a [Be]⁺ (i.e. O⁻–Be²⁺) centre—a hole trapped by O²⁻ lattice ion near a Be²⁺ perturbing defect. The luminescence excitation and isochronal annealing studies led to the conclusion that the 6.2 eV luminescence arises at the radiative decay of electron excitations near Be²⁺. These excitations can be created at the recombination of electrons with the holes localised in the [Be]⁺ centres, at the recombination of holes with the electrons trapped in the Be¹⁺ centre or at a direct excitation of oxygen near the Be²⁺ ion.     

Three-dimensional spatiokinetic distributions of sputtered andscattered products of Ar+ and Cu+ impacts onto theCu surface: molecular dynamics simulations

Energy and angular distributions of reflections and sputtered atoms are essential inputs for feature profile evolution simulations. Molecular dynamics simulations are used to compute the three-dimensional energy and angular distributions for reflected and sputtered products when both Ar⁺ and Cu⁺ ions bombard a copper surface. We term these “spatiokinetic” distribution functions (SKDF's). We show by example that SKDF's for reflected Ar⁺ ions focus as the incident angle &thetas;_i (normal=0°) is increased from 60-75° and broaden as the incident energy E_i is increased from 55-175 eV. We show that the SKDF's for glancing-angle reflected Cu⁺ ions focus when E_i is increased from 55-175 eV. We show that the SKDF's for copper atoms sputtered by 175 eV Ar⁺ are insensitive to &thetas;_i;. We report total sputter yields for Ar⁺ and Cu⁺ ions at 55 and 175 eV for incident angles between 0° and 85°, and sticking probabilities for Cu⁺ ions for these energies and angles. Comparison to representative experimental results (Doughty et al., 1997) is given     

Oxidation of Mg and electron transfer processes

Results of a study of the modification in electron capture processes during the oxidation of metal surfaces are presented by the example of O^δ- formation in oxygen ion/atom scattering. Measurements of scattered-ion fractions were made for a clean Mg surface, which was then exposed to O₂ and also MgO(100). It was found that a strong increase in capture occurs with increasing oxygen coverages from the submonolayer range to very high coverages corresponding to oxide formation. At low coverages these changes are interpreted as resulting from competing local effects at oxygen chemisorption sites and non-local effects corresponding to work function changes. The results for high exposures are similar to what was observed for the MgO(100) crystal. Here scattering on an ionic solid is discussed and non-resonant electron capture on the O^δ− site has to be considered after inclusion of level shifts in the Madelung field. Here a sequence of collisions, or sufficiently close approaches to O^δ− sites, resulting in non-resonant charge transfer, can lead to a build up the O⁻ population even if the capture probability at a given site is low.     

Adsorption of oxygen on Au(111) by exposure to ozone

Atomic oxygen coverages of up to 1.2 ML may be cleanly adsorbed on the Au(111) surface by exposure to O₃ at 300 K. We have studied the adsorbed oxygen layer by AES, XPS, HREELS, LEED, work function measurements and TPD. A plot of the O(519 eV)/Au(239 eV) AES ratio versus coverage is nearly linear, but a small change in slope occurs at Θ_O=0.9 ML. LEED observations show no ordered superlattice for the oxygen overlayer for any coverage studied. One-dimensional ordering of the adlayer occurs at low coverages, and disordering of the substrate occurs at higher coverages. Adsorption of 1.0 ML of oxygen on Au(111) increases the work function by +0.80 eV, indicating electron transfer from the Au substrate into an oxygen adlayer. The O(1s) peak in XPS has a binding energy of 530.1 eV, showing only a small (0.3 eV) shift to a higher binding energy with increasing oxygen coverage. No shift was detected for the Au 4f_7/2 peak due to adsorption. All oxygen is removed by thermal desorption of O₂ to leave a clean Au(111) surface after heating to 600 K. TPD spectra initially show an O₂ desorption peak at 520 K at low Θ_O, and the peak shifts to higher temperatures for increasing oxygen coverages up to Θ_O=0.22 ML. Above this coverage, the peak shifts very slightly to higher temperatures, resulting in a peak at 550 K at Θ_O=1.2 ML. Analysis of the TPD data indicates that the desorption of O₂ from Au(111) can be described by first-order kinetics with an activation energy for O₂ desorption of 30 kcal mol⁻¹ near saturation coverage. We estimate a value for the Au–O bond dissociation energy D(Au–O) to be 56 kcal mol⁻¹.     

Determination of different oxygen transport mechanisms and measurement of the oxygen ion conductivity of Y1Ba2Cu3O7−x

By undertaking AC electrochemical impedance experiments on yttria stabilised zirconia electrolytes with polished Y₁Ba₂Cu₃O_7−x electrodes, the activation energy for oxygen ion transport within the bulk of Y₁Ba₂Cu₃O_7−x, in air, over the temperature range 823 K–1043 K, was determined to be 1.50 ± 0.05 eV. At 1000 K the oxygen ionic conductivity was calculated to be around one order of magnitude lower than that in yttria stabilised zirconia. Typical calculated values were σ=5×10⁻⁵ (ω cm)⁻¹ and 6×10⁻³ (ω cm)⁻¹ at the respective temperatures 823 K and 1043 K. By employing a similar cell but with Y₁Ba₂Cu₃O_7−x paste electrodes, oxygen transfer between the Y₁Ba₂Cu₃O_7−x and the electrolyte was found to occur via a surface diffusional processes. Over the temperature range 873 K–1098 K, in air, the activation energy for in-diffusion at the surface was found to be 1.4±0.1 eV and that for out-diffusion at the surface to be 1.76±0.05 eV.     

Optical constants of Tl4Ga3InSe8 layered single crystals

The optical properties of Tl₄Ga₃InSe₈ layered single crystals have been studied by means of transmission and reflection measurements in the wavelength range of 500–1100 nm. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.94 and 2.20 eV, respectively. Transmission measurements carried out in the temperature range of 10–300 K revealed that the rate of change of the indirect band gap with temperature is γ=−4.1×10⁻⁴ eV/K. The absolute zero value of the band gap energy was obtained as E_gi(0)=2.03 eV. The dispersion of the refractive index is discussed in terms of the Wemple–DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index were found to be 4.10 eV, 23.17 eV, 6.21×10¹³ m⁻² and 2.58, respectively. From X-ray powder diffraction study, the parameters of monoclinic unit cell were determined.     

The interaction of oxygen and potassium on the Ru(001) surface

The interaction of oxygen and different coverages of potassium on Ru(001) has been investigated by thermal desorption spectroscopy (TDS), metastable quenching spectroscopy (MQS), electron stimulated desorption spectroscopy (ESD), and work-function change measurements. The results show that this is a complex surface system with several different oxides forming, depending on the surface stoichiometry and temperature. While we cannot uniquely identify all the surface species, our interpretation of the present data combined with previous information is as follows. For potassium coverages up to about three monolayers (θ_K ≈ 1), exposure to oxygen initially gives oxygen atoms on the surface. Further exposure produces some surface monoxide ions O²⁻, which are converted with additional exposure to Superoxide ions O⁻₂ and possibly peroxide ions O²⁻₂. Thermal annealing causes strong changes in the surface oxide composition, and with potassium multilayers (θ_K ≈ 10) all the oxides diffuse beneath the K surface layer with annealing to only 300 K. K₂O and K₂O₂ are found to desorb together in the 600–700 K region.     

Surface defects created by low energy (20 < E < 240 eV) ion bombardment of Ge(001)

Surface defects created on Ge(001) exposed to low energy Xe ions are characterized by in situ scanning tunneling microscopy (STM). The temperature of the sample during ion bombardment is 165 C and ion energies range from 20 to 240 eV. The ion collisions create defects (vacancies and adatoms) which nucleate and form vacancy and adatom islands. For fixed total vacancy creation, the vacancy island number density increases with increasing ion energy: the vacancy island number density is 1.6 × 10⁻²⁰ cm⁻² for 40 eV ion bombardment and increases to 4.4 × 10⁻²⁰ cm⁻² for 240 eV ion bombardment. The increased nucleation rate for vacancies is attributed to clustering of defects. The sputtering yield of Ge(001) is also measured by STM. The sputtering yield for 20 eV ions is approximately 10⁻³ per ion but the net yield for surface defects (sum of adatoms and vacancies) is an order of magnitude higher, 10⁻², due to adatom-vacancy pair creation.     

Optical second-harmonic investigations of the isothermal desorption of SiO from the Si(100) and Si(111) surfaces

The isothermal desorption of SiO from the Si(100) and Si(111) surfaces was investigated by means of optical second-harmonic generation (SHG). Due to the high adsorbate sensitivity of this method, desorption rates could be measured over a wide range from 10⁻¹ to 10⁻⁶ ML s⁻¹. From their temperature dependence between 780 and 1000 K, activation energies of E_A=3.4±0.2 eV and E_A=4.0±0.3 eV and pre-exponential factors of ν₀=10^16±1 s⁻¹ and ν₀=10^20±1 s⁻¹ for SiO desorption were obtained for Si(100) and Si(111), respectively. In the case of the Si(100) surface, a pronounced decrease of the first-order rate constants was observed upon increasing the initial coverage from 0.02 to 0.6 ML. The results are interpreted in terms of coverage-dependent oxygen-binding configurations, which influence the stability of the oxide layer.     

Adsorption of NO on Au atoms and dimers supported on MgO(1 0 0): DFT studies

The adsorption of NO on single gold atoms and Au₂ dimers deposited on regular O²⁻ sites and neutral oxygen vacancies (F_s sites) of the MgO(1 0 0) surface have been studied by means of DFT calculations. For Au₁/MgO the adsorption of NO is stronger when the Au atom is supported on an anionic site than when it is on a F_s site, with adsorption binding energies of 1.1 and 0.5 eV, respectively. In the first case the spin density is mainly concentrated on the metal atom and protruding from the surface. In such a way, an active site against radicals such as NO is generated. On the F_s site, the presence of the vacancy delocalizes the spin into the substrate, weakening its coupling with NO. For Au₂/MgO, as this system has a closed-shell configuration, the NO molecules bonds weakly with Au₂. Regarding the N–O stretching frequencies, a very strong shift of 340–400 cm⁻¹ to lower frequencies is observed for Au₁/MgO in comparison with free NO.     

A comparative study of donor formation in dysprosium, holmium, and erbium implanted silicon

Formation of donor centers in Czochralski grown silicon doped with dysprosium, holmium, and erbium is discussed. Donor states of three kinds are introduced in the implanted layers after annealing at T=700°C. Shallow donor states with ionization energies between 20 and 40 meV are attributed to oxygen -related thermal donors. Other donor centers in the energy range of E_C−(60…70) meV and E_C−(100…120) meV appear to be dependent on dopants. After a 900°C anneal strong changes in the donor formation are observed only in silicon doped with erbium. Instead of donors at E_C−(118±5) meV, new donor centres at E_C−(145±5) meV are formed. Reportedly, the latter ones are involved in the excitation process of the Er³⁺ ions with a characteristic luminescence line at ≈1.54 μm.     

Electron coincidence spectroscopy of O2: Valence electron momentum distributions and binding energies

The binding energy spectra and momentum distributions for the valence orbital transitions of molecular oxygen have been obtained using the (e,2e) reaction at total electron energies of 400 and 1200 eV. The outer π_g orbital is found to have a wave-function which is significantly more extended in momentum space than that of the more-tightly bound π_u orbitals. This is interpreted as a consequence of the single occupancy of the anti-bonding π_g orbitals. Peaks at 39 and 47 eV are assigned to ^4,2Σ_g⁻ ion states on the basis of the observed momentum distributions. The momentum distribution and observed intensity for the 32.5 eV transition supports the assignment of 2 Π_u for this ion state. The measured relative strengths for the various Π_u and Σ_u transitions are in qualitative agreement with CI and Green's function calculations.     

Electron stimulated desorption of CO from Pd1/W(110)

The electron impact behavior of CO adsorbed on Pd₁/W(110) was investigated. The desorption products observed were neutral CO, CO⁺, and O⁺. After massive electron impact residual carbon, C/W = 0.15, but not oxygen was also found, suggesting that energetic neutral O, not detected in a mass analyzer must also have been formed. Formation of β-CO, i.e., dissociated CO with C and O on the surface was not seen. The total disappearance cross section varies only slightly with coverage, ranging from 9 × 10 ⁻¹⁸ cm² at low to 5 × 10⁻¹⁸ cm² at saturation (CO/W = 0.75). The cross section for CO⁺ formation varies from 4 × 10⁻²² cm² at satura to 2 × 10⁻²¹ cm² at low coverage. That for O⁺ formation is 1.4 × 10⁻²² cm² at saturation and 2 × 10⁻²¹ cm² Threshold energies are similar to those found previously [J.C. Lin and R. Gomer, Surf. Sci. 218 (1989) 406] for CO/W(110) and CO/Cu₁/W(110) which suggests similar mechanisms for product formation, with the exception of β-CO on clean W(110). It is argued that the absence or presence of β-CO in ESD hinges on its formation or absence in thermal desorption, since electron impact is likely to present the surface with vibrationally and rotationally activated CO in all cases; β-CO formation only occurs on surfaces which can dissociate such CO. It was also found that ESD of CO led to a work function increase of the remaining Pd₁/W(110) surface of 500 meV, which could be annealed out only at 900 K. This is attributed to surface roughness, caused by recoil momentum of energetic desorbing entities.     

Surface properties of Si from photoelectric emission at room temperature and 80 °K

The position of the Fermi level with respect to the energy bands at a semiconductor surface as well as changes in the work function can be determined from the energy distributions of photoelectrically emitted electrons. Prior studies involved the photoelectric yield spectrum and required assumptions concerning the photoelectric threshold; the present method is free of such assumptions. Measurements at room temperature indicate that the Fermi level lies 0.23 eV and 0.41 eV above the top of the valence band for degenerate p and n-type materials, respectively. These results confirm those of Allen and Gobeli¹). Cooling to 80 °K increases the work function of p-type material by 0.025 eV while that of n-type Si remains unchanged; the results show that the electron and hole gases in the surface states are degenerate. The density of surface states lies between 7 × 10¹³ and 10¹⁵ eV⁻¹ cm⁻². On the cesiated surface, the Fermi level lies 0.16 eV below the conduction band at room temperature and coincides with its bottom at 80 °K.     

Transient behavior of the thermal ion emission from KCl(0 0 1) upon polarity reversal of the electric extraction field

The technique of polarity reversal of the external electric extraction field (strength: 10² V/cm) was applied to study the relaxation of the thermal ion emission from the KCl(0 0 1) single crystal surface. Transient currents of the K⁺ and K₂Cl⁺ ions upon switching from the emission suppression to the ion extraction mode were recorded as a function of the evaporation time, the temperature, and the time of field reversal. The temperature dependence of the time constants of the K⁺ ions obtained from the exponential decreases of the emission currents to their steady-state emission resulted as logτ_h(s)=−(13.39±0.56)+(12.42±0.49)10³/T in a high temperature interval of 826–930 K after a prolonged heating period and as logτ_l(s)=−(20.65±1.04)+(16.77±0.81)10³/T in a low temperature interval of 750–801 K at the initial stage of evaporation, with corresponding activation energies of E_h(K⁺)=2.47±0.14 eV and E_l(K⁺)=3.32±0.16 eV, respectively. The transient currents can be interpreted by a partial adsorption of the suppressed ion currents at the kinks of the surface steps. The differences in the high- and low-temperature runs may be attributed to a strong coarsening of the surface at higher temperatures, which occurs as a bunching of monosteps to macrosteps and/or to an enrichment and segregation of divalent impurities at the surface. The transient behavior of the molecular K₂Cl⁺ ions seems to be strongly correlated with that of the K⁺ ions. This correlation is possibly caused by changes of the strength or the sign of the local electrical field connected with the excess charge at the kinks.     

Effect of secondary electrons from latent tracks created in YBCO by swift heavy ion irradiation

Swift heavy ions (SHI) with electronic energy loss exceeding a value of 14.4 keVnm⁻¹ create amorphized latent tracks in YBCO type superconductors. In the low fluence regime of an ion beam where tracks do not overlap, a decrease of the superconducting transition temperature as probed through resistivity studies, is not expected due to availability of percolating current paths. The present study however shows T_c decrease by about 1–3 K in thin films of YBCO when irradiated by 250 MeVAg ions at 79 K at a fluence of 5×10¹⁰–1×10¹² ionscm⁻². The highest fluence used in the present study is three times less than the fluence where track overlapping becomes significant. The T_c tends to increase towards the preirradiation value on annealing the films at room temperature. To explain this unusual result, we consider the effect of ion irradiation in inducing materials modification not only through creation of amorphized latent tracks along the ion path, but also through creation of atomic disorder in the oxygen sublattice in the Cu–O chains of YBCO by the secondary electrons. These electrons are emitted radially from the tracks during the passage of the SHI. Considering the correlation between the charge state of copper and its oxygen coordination, we show in particular that the latter process is a consequence of the inelastic interaction of the SHI induced low-energy secondary electrons with the YBCO lattice, which result in chain oxygen disorder and T_c decrease.