共晶键合与减薄技术的压电能量采集器（英）

采用微硅 锆钛酸铅（Si-PZT）悬臂梁结构并在悬臂梁末端附加镍质量块,构成可以工作于低频环境（小于1 000 Hz）的微压电能量采集器,一种利用压电效应将环境振动能转换为电能的器件。利用金薄膜作为中间层的共晶键合技术和PZT研磨减薄技术制备了微压电悬臂梁结构,PZT减薄实验最好结果为减薄至8 m。镍质量块（2 mm2 mm0.6 mm）采用微电铸工艺制备。通过对硅片与块材PZT的共晶键合工艺与PZT减薄技术的研究,制备出总厚度约为71 m的Si-PZT悬臂梁结构,其中硅梁厚约为47 m,PZT梁厚约为24 m。制备的微压电振动能量采集器样品的测试结果表明:在谐振频率为950 Hz,1.0g加速度激励条件下,其交流输出峰值电压可达958 mV。     

直接键合InP-GaAs结构界面的特性研究

通过对直接键合InP-GaAs结构的红外吸收光谱分析以及断面扫描电子显微镜观察发现，样品制备过程中不均匀的外加压强导致InP-GaAs交界面局部出现了不连续过渡的空间层，实验上将熔融石蜡渗透并被填充到该空间层，利用其对3.509μm波长光的强烈吸收特性可表征 这种局部的键合不连续区域，二维扫描测试样品不同区域的吸收谱得到3.509μm波长吸收强 度等值线图，从而描绘出外加压强的不均匀分布.实验上通过改进键合装置的施压均匀性， 得到了连续过渡界面且均匀键合的InP-GaAs结构，利用这种均匀键合技术有望制备大尺寸器 件例如光学微腔等. 关键词： 晶片直接键合 界面 红外吸收光谱     

YBCO超导芯片Ag-Au电极金带压接实验探讨

针对超导芯片与其它电路可靠连接的难题开展了超导芯片电极引线键合的实验研究。在超导薄膜芯片上先制作了银-金电极,然后利用热声焊接原理,将100μm×25μm金带键合至电极表面,最后进行电极引线拉力测试。依据GJB548B-2005关于键合强度的规定,初步确定了键合工艺参数。S波段超导滤波器应用实例表明,以该方法实现电路互联,其微波性能优异。     

基于智能剥离技术的SOI材料制备

优化了硅片低温直接键合与智能剥离技术的工艺流程，在550℃，2.1×10^-2 Pa条件下制备了SOI材料，其顶层单晶Si膜的表面粗糙度为8.5 nm，缺陷密度为90 cm^-2，键合强度达到153.7 kg/cm²，形成的SOI结构除了可以形成三维集成电路中有源层间良好的绝缘层，避免了高温过程对有源层器件结构、材料及性能的影响，还能为三维集成电路后续有源层的制造提供高质量的单晶硅材料. 关键词： 绝缘体上硅 智能剥离 低温直接键合     

钛基纳米金刚石涂层场发射阴极

设计了一种新的金刚石场发射阴极工艺.用旋涂法在金属钛片上涂覆纳米金刚石涂层，经过适当条件的真空热处理，实现钛与金刚石之间的化学键合即欧姆接触，从而形成以金属钛为衬底，碳化钛键合层为过渡层，金刚石纳米颗粒为场发射体的场发射阴极.样品的阈值场强可达6.3V/μm，场发射电流密度在21 V/μm场强下可达到60.7 μA/cm2.提出了样品的结构模型,并分析了其电子输运方式.样品的Fowler-Nordheim曲线基本为一直线，根据经典场发射理论，可以证实其电子发射机制为场发射.观察到在获得稳定的场发射性能之前存在激发过程，并对其作了简单解释.     

InP晶片表面优化处理及键合性质分析

采用原子力显微镜（AFM）和X射线光电子能谱（XPS）对不同处理流程后的InP（100）表面粗糙度及化学成分进行测试分析,优选出C、O元素浓度较低,且表面均方根粗糙度影响较小的表面清洗方法。通过比较键合结构的薄膜转移照片可知,表面清洗后的干燥与除气步骤可较好地去除键合界面中的空洞和气泡,从而提高键合质量。键合结构的电子显微镜（SEM）照片,X射线双晶衍射曲线（XRD）及I-V测试分析表明键合结构具有良好的机械、晶体及电学性质。     

晶圆键合和激光剥离工艺对GaN基垂直结构发光二极管芯片残余应力的影响

GaN基发光二极管(LED)中的残余应力状态对器件的性能和稳定性有很大影响. 通过使用三种不同的键合衬底(Al₂O₃衬底, CuW衬底和Si衬底)以及改变键合温度(290 ℃, 320 ℃, 350 ℃和380 ℃), 并且使用不同的激光能量密度(875, 945和1015 mJ·cm^-2) 进行激光剥离, 制备了不同应力状态的GaN基LED器件. 对不同条件下GaN LED进行弯曲度、Raman 散射谱测试. 实验结果表明, 垂直结构LED中的残余应力的状态是键合衬底和键合金属共同作用的结果, 而键合温度影响着垂直结构LED中的残余应力的大小. 激光剥离过程中, 一定能量密度下激光剥离工艺一般不会对芯片中的残余应力造成影响, 但是如果该工艺对GaN 层造成了微裂缝, 则会在一定程度上起到释放残余应力的作用. 使用Si衬底键合后, 外延蓝宝石衬底翘曲变大, 对应制备的GaN基垂直结构 LED中的残余应力为张应力, 并且随着键合温度的上升而变大; 而Al₂O₃和CuW衬底制备的LED中的残余应力为压应力, 但使用Al₂O₃衬底键合制备的LED中压应力随键合温度上升而一定程度变大, CuW 衬底制备的LED中压应力随键合温度上升而下降.     

单晶锗表面键合光敏染料的研究

本文在烯丙醇单体上进行了两种一甲川菁的合成,并用一种新的化学键合法将两种一甲川菁染料键合在抛光的半导体单晶锗表面。将键合有光敏染料的锗片进行了激光Raman光谱及XPS谱测试,结果表明,与对照锗片相比,键合后的锗片表面,锗衬底的一级拉曼峰强度减少,并在600～3200cm~(-1)范围内出现了与键合颜料分子相应的拉曼频移;在XPS谱中,分别进行了C,N,O,S,卤素等原子的谱图分析,证实了键合颜料后半导体单晶锗表面增加了C—N,S—C,C—O等键,结果与键合的颜料分子结构相符,表明两种光敏染料通过锗氧键共价键合于锗表面。     

超薄LiTaO3晶片的键合减薄技术

在制造红外热释电探测器阵列过程中，需要利用超薄钽酸锂(LiTaO₃)晶片作为红外热释电探测器件的敏感层。通常LiTaO₃晶片的厚度远厚于红外热释电探测器件要求的厚度，所以需要采用键合减薄技术对LiTaO₃晶片进行加工处理。键合减薄技术主要包括：苯并环丁烯（BCB）键合、铣磨、抛光、加热剥离、刻蚀BCB。加工后得到面积为10mm×10mm、厚度为25μm的超薄单晶LiTaO₃薄膜，晶片厚度、表面粗糙度和面形精度比较理想。测得了LT晶片减薄后的热释电系数为1.6×10^-4Cm^-2K^-1。得到的单晶LiTaO₃薄膜满足红外热释电探测器敏感层的要求。     

亚毫安阈值的1.3μm垂直腔面发射激光器

设计并研制了室温连续工作的单模13 μm垂直腔面发射激光器（VCSEL）,阈值电流为051 mA,最高连续工作温度达到82℃,斜率效率为029 W/A.采用InAsP/InGaAsP应变补偿多量子阱作为有源增益区,由晶片直接键合技术融合InP基谐振腔和GaAs基GaAs/Al（Ga）As分布布拉格下反射腔镜,并由电子束蒸发法沉积SiO₂/TiO₂介质薄膜上反射腔镜形成13 μm VCSEL结构.讨论并分析了谐振腔模式与量子阱增益峰相对位置对器件性能的影响. 关键词： 垂直腔面发射激光器 晶片直接键合 应变补偿多量子阱     

硅压力传感器中硅玻璃阳极键合的热应力分析

由于硅与玻璃阳极键合需要在相对较高的温度下进行,因此材料之间会因热膨胀系数失配而产生较大的热应力,该应力对压力传感器的性能影响较大。对采用单晶硅横膈膜作为敏感膜与玻璃环阳极键合形成压力参考腔的封装,用有限元方法对硅玻璃环键合后因温度变化所产生的应力分布进行了系统仿真分析,并采用泰曼一格林干涉仪对键合后硅片的变形进行测量。测量结果显示硅膜的挠度为283nm,测量结果与仿真结果基本一致。     

涂层界面结合强度检测研究(Ⅱ)：涂层结合界面应力检测系统

利用X射线衍射技术(XRD)测试了涂层及其基体材料的应力及其变化规律，建立了一种涂层结合界面应力检测系统，进行界面结合状态的检测研究.利用涂层从基体脱粘前后的界面应力变化量，结合涂层材料的物性参数和涂层-基体系统温度场参数，用涂层残余应力衍射峰来表征涂层与基体的结合强度，创立一种研究检测涂层结合强度理论的实验新方法，适用于各种热障涂层的界面结合强度测量. 关键词： X射线衍射法(XRD) 界面结合强度 涂层 残余应力     

Effects of ultrasonic agitation on adhesion strength of micro electroforming Ni layer on Cu substrate

Micro electroforming is an important technology, which is widely used for fabricating micro metal devices in MEMS. The micro metal devices have the problem of poor adhesion strength, which has dramatically influenced the dimensional accuracy of the devices and seriously limited the development of the micro electroforming technology. In order to improve the adhesion strength, ultrasonic agitation method is applied during the micro electroforming process in this paper. To explore the effect of the ultrasonic agitation, micro electroforming experiments were carried out under ultrasonic and ultrasonic-free conditions. The effects of the ultrasonic agitation on the micro electroforming process were investigated by polarization and alternating current (a.c.) impedance methods. The real surface area of the electroforming layer was measured by cyclic voltammetry method. The compressive stress and the crystallite size of the electroforming layer were measured by X-ray Diffraction (XRD) method. The adhesion strength of the electroforming layer was measured by scratch test. The experimental results show that the imposition of the ultrasonic agitation decreases the polarization overpotential and increases the charge transfer process at the electrode–electrolyte interface during the electroforming process. The ultrasonic agitation increases the crystallite size and the real surface area, and reduces the compressive stress. Then the adhesion strength is improved about 47% by the ultrasonic agitation in average. In addition, mechanisms of the ultrasonic agitation improving the adhesion strength are originally explored in this paper. The mechanisms are that the ultrasonic agitation increases the crystallite size, which reduces the compressive stress. The lower the compressive stress is, the larger the adhesion strength is. Furthermore, the ultrasonic agitation increases the real surface area, enhances the mechanical interlocking strength and consequently increases the adhesion strength. This work contributes to fabricating the electroforming layer with large adhesion strength.     

Properties of laminate composites reinforced with glass fabrics treated with sol-gel transition silicate gel

Glass fabric was treated with sol-gel transition silicate gel to modify the composite interface. Micro roughness on the surface of the glass fabric was observed clearly by the atomic force microscope (AFM) at the surface of glass fabric which had been treated with a base catalytic silicate gel (b-SGSi). The specific surface area of this glass was 1.4 times that of the original glass fabric. The double cantilever beam (DCB) test was carried out on glass epoxy laminate composites, using b-SGSi glass fabrics and standard glass fabrics. In this test, the former laminate showed two fracture modes, stable and unstable crack growth, whereas the latter laminate showed only stable crack growth. In reference to the fracture toughness of the stable crack growth, the former laminate is about 1.4 times greater than that of the latter laminate. It was suspected that the difference was caused by the different interface bonding strength in the composite. The interfacial bonding was also tested by the soldering iron test and substantiated the superiority of b-SGSi glass fabric to standard glass.     

DLC nano-dot surfaces for tribological applications in MEMS devices

With the invention of miniaturized devices like micro-electro-mechanical systems (MEMS), tribological studies at micro/nano-scale have gained importance. These studies are directed towards understanding the interactions between surfaces at micro/nano-scales, under relative motion. In MEMS devices, the critical forces, namely adhesion and friction restrict the smooth operation of the elements that are in relative motion. These miniaturized devices are traditionally made from silicon (Si), whose tribological properties are not good. In this paper, we present a short investigation of nano- and micro-tribological properties of diamond-like carbon (DLC) nano-dot surfaces. The investigation was undertaken to evaluate the potential of these surfaces for their possible application to the miniaturized devices. The tribological evaluation of the DLC nano-dot surfaces was done in comparison with bare Si (1 0 0) surfaces and DLC coated silicon surfaces. A commercial atomic force microscope (AFM) was used to measure adhesion and friction properties of the test materials at the nano-scale, whereas a custom-built micro-tribotester was used to measure their micro-friction property. Results showed that the DLC nano-dot surfaces exhibited superior tribological properties with the lowest values of adhesion force, and friction force both at the nano- and micro-scales, when compared to the bare Si (1 0 0) surfaces and DLC coated silicon surfaces. In addition, the DLC nano-dot surfaces showed no observable wear at the micro-scale, unlike the other two test materials. The superior tribological performance of the DLC nano-dot surfaces is attributed to their hydrophobic nature and the reduced area of contact projected by them.     

电容式微超声波换能器的设计与电容值测试*

本文设计的微电容超声波换能器(CMUT)是由电容阵列组成的超声波传感器,主要是利用电容的改变来实现能量的转换。是基于硅硅键合技术的MEMS电容式超声传感器,制作的传感器误差小,并且工艺流程简单且能进行量产。在利用E4990A阻抗分析仪对传感器进行C—V测试分析而得出其电容的实际值与理论值的误差仅为1.6%。并且利用该仪器测试传感器电容在工作电压下随频率的变化,得出其在工作电压下,频率为400K的时候电容值为617.67PF,为对传感器进行理论计算提供了重要支撑,并且为后续转换电路的设计提供了数据支撑。     

Metal bonding strength in low‐temperature processed titanium using atomic force microscopy with single‐wall carbon nanotube tip

We report the development of a Ti–Ti bonding process at a low bonding temperature below 200 °C using chemically surface‐activated Ti thin films and a reliable evaluation method for measuring the Ti–Ti bond strength by means of atomic force microscopy (AFM). Using Ti as an interlayer enables void‐free bonding because Ti exhibits fast diffusion and oxide solubility. On the other hand, wafer bonding is an important processing step for 3D circuit integration that requires a high reliability of the process. However, the reliability of bonding‐strength values obtained by employing conventional measurement devices is limited by comparably large measurement errors and restricted the availability of suitable sample material. In this study, the use of AFM to measure the bonding strength is proposed. The interfacial bonding properties depend on the Ti deposition parameters. A bonding temperature of 200 °C was found to be appropriate for the development of a low bonding temperature wafer‐bonding process. The pretreatment methods like plasma activation and chemical activation at 200 °C result in a Ti bonding strength of approximately 8.22 J/m², sufficient for applications in 3D circuit integration. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

A Novel Chitosan/Polyvinyl Pyrrolidone (CS/PVP) Three-Dimensional Composite and Its Mechanism of Strength Improvement

Novel biodegradable three-dimensional (3D) composites with good mechanical properties have been prepared by coagulation of a chitosan/polyvinyl pyrrolidone (CS/PVP) solution in NaOH. For example, the strength and modulus of CS/PVP (1/1) were 82.5 MPa and 1.86 GPa, increasing 237% and 644% compared with CS, respectively. Scanning electron microscopy and Fourier transform infrared analysis suggest that the PVP component did not dissolve during the preparation process. The nonsolution of the composites is attributed to the extremely strong hydrogen bonding formed between the CS and PVP macromolecules. It was also found that there are synergistic effects between the formation of hydrogen bonding with PVP and cross-linking with glutaraldehyde (GA) for the improvement in the mechanical properties of CS. The mechanism of strength improvement has been discussed thoroughly from the aspects of free volume.     

Avoiding silicon/glass bonding damage with fusion bonding method

A novel fusion bonding method between silicon and glass with Nd:YAG laser is described.This method overcomes the movable mechanical parts damage caused by the electrostatics force in micro-electronic machine-system(MEMS)device during the anodic bonding. The diameter of laser spot is 300 μm,the power of laser is 100 W,the laser velocity for bonding is 0.05 m/s,the average bonding tension is 6.3 MPa.It could distinctly reduce and eliminate the defects and damage,especially in movable sensitive mechanical parts of MEMS device.     

基于XRD的镀锌钝化膜残余应力试验研究

利用XRD技术测试了镀锌钝化膜结合界面的残余应力，同时通过电解抛光法检测了其厚度方向残余应力的分布规律，分析了残余应力对镀锌钝化膜结合强度的影响. 试验结果表明，镀锌钝化膜的残余应力均表现为压应力，并随着基体表面残余应力的增大而减小；钝化膜在2—10μm厚度方向的残应力为-274.5—-428.3MPa，其应力为梯度分布；镀锌钝化膜与基体的界面结合强度与其残余应力成反比，减小薄膜残余应力，有利于提高镀锌钝化膜与基体的结合强度. 关键词： X射线衍射法(XRD) 镀锌钝化膜 结合强度 残余应力