蓝光激发的Y2.93Al5O12∶0.07Ce3+黄色荧光粉的制备及光致发光

以Al₂(SO₄)₃·18H₂O、尿素为原料,采用水热-热解法制备了球形α-Al₂O₃粉体。以自制α-Al₂O₃、Y₂O₃及CeO₂为原料,固相法制备了白光LED用Y_2.93Al₅O₁₂∶0.07Ce3+黄色荧光粉,通过X射线衍射（XRD）、扫描电镜（SEM）、X射线能谱（EDS）及荧光光谱（PL）等对产物的物相、形貌及光致发光性能进行了表征。结果表明：水热-热解法制备出了物相纯净、分散性良好的球形α-Al₂O₃粉体,以该α-Al₂O₃为原料,合成出可被460 nm蓝光有效激发,发射光谱为峰值在550 nm宽带的Y_2.93Al₅O₁₂∶0.07Ce3+荧光粉,色坐标为（0.453,0.531 9）,采用GSAS软件对Y_2.93Al₅O₁₂∶0.07Ce3+荧光粉的XRD图进行了Rietveld结构精修,精修图与XRD测试图完全吻合,Y,Al,Ce,O四元素均匀地分布在黄色荧光粉产物中,Y_2.93Al₅O₁₂∶0.07Ce3+黄色荧光粉的激发光谱由两个部分组成,在340和460 nm处有两个非常明显的吸收峰,Ce3+的4f能级由于自旋-耦合而劈裂为两个光谱支项2F_7/2和2F_5/2,其中2F_5/2为基谱项。340 nm的激发峰对应于2F_5/2→5D_5/2的跃迁,460 nm的激发峰属于2F_7/2→5D_3/2的跃迁,并且460 nm处的激发强度强于340 nm处激发强度。以460 nm为监测波长得到的发射光谱,最强发射峰位于550 nm,Y_2.93Al₅O₁₂∶0.07Ce3+荧光粉是一种适用于白光LED的高性能黄色荧光粉。     

固相法制备Ce,Cr∶YAG透明陶瓷及其荧光性能研究

以高纯Al_2O_3、Y_2O_3、Cr_2O_3和CeO_2为原料,采用固相法制备了Ce,Cr∶YAG透明陶瓷。通过XRD测试和荧光测试,研究了0.5%Ce~(3+),0.1%Cr~(3+)掺杂的YAG透明陶瓷片的晶相结构和光学性能。结果表明:1 750℃烧结获得的该陶瓷片为YAG纯相,在可见光区的透过率达到了70%以上。在430 nm的光激励下,透明陶瓷同时表现出了Ce~(3+)、Cr~(3+)的特征发射峰,在补充白光LED的红光部分方面具有一定的实际应用价值。     

Gd3(Al,Ga)5O12:Ce闪烁晶体缺陷对其发光性能的影响

新型闪烁晶体Gd₃(Al,Ga)₅O₁₂:Ce(GAGG:Ce)在制备过程中易出现包裹体及反格位缺陷等问题,严重影响晶体的性能.为了抑制这些缺陷以得到大尺寸高质量的GAGG:Ce晶体,本文以Gd₃(Al,Ga)₅O₁₂为基质、Ce3+为掺杂离子,采用提拉法生长得到了GAGG:Ce晶体,并对不同晶体部位的物相结构、微区成分、透光性质、发光及时间性能进行了测试和对比分析.结果表明,GAGG:Ce晶体的透过谱中存在340和440 nm两处Ce³⁺特征吸收带,且位于550 nm处的直线透过率为82%.晶体尾部因杂相包裹体等宏观缺陷的影响,导致其透过率下降至70%左右.微区成分分析进一步表明GAGG:Ce晶体中存在三种类型的包裹体,分别为富Gd相、富Ce相及(Al,Ga)₂O₃相.GAGG:Ce晶体的X射线激发发射谱中在550 nm附近存在Ce³⁺宽发射带,且380 nm处还存在GdAl/Ga反格位缺陷引起的发射.晶体中存在的杂相包裹体及GdAl/Ga反格位缺陷等因素导致Ce³⁺在GAGG基质的发光强度下降12.5%;GdAl/Ga反格位离子与近邻Ce的隧穿效应使得GAGG:Ce晶体的衰减时间由117.7 ns延长至121.9 ns,且慢分量比例由16%增加至17.2%.     

n(Zn)：n(Ga)比值对合成ZnGa2O4结构及光致发光性能的影响

以ZnO和HGaO₂为原料,用不同配比合成出系列ZnGa₂O₄,并对其晶体结构和发光性能进行了研究。用荧光分光光度计检测了ZnGa₂O₄的激发和发射光谱,用X射线衍射仪检测了ZnGa₂O₄的衍射图谱,用热重差热仪绘制了TGA-DAT曲线。对检测结果分析认为:1.ZnGa₂O₄属于尖晶石结构,稍过量的Zn或Ga能进入ZnGa₂O₄结构中,并对ZnGa₂O₄的晶格常数产生一定影响。2.ZnGa₂O₄存在两个自激发光中心,当Ga稍过量时,自激发光中心是四面体镓氧键[T_d(Ga-O)],最大激发波长约248nm,最大发射波长约367nm;当Zn稍过量时,自激发光中心是八面体镓氧键[O_h(Ga-O)],最大激发波长约270nm,最大发射波长约441nm。当n(Zn):n(Ga)在理论值附近,激发和发射光强度最大,而且光谱峰位发生了红移。3.ZnGa₂O₄的热稳定性能非常好。上述结论对研究ZnGa₂O₄基质或掺杂的发光材料具有一定意义。     

Effects of Ce3+ energy level structure on absorption and luminescence properties of Ce-doped YAlO3,Y3Al5O12,and LaAlO3 single crystals

We investigate the spectra and scintillation properties of Ce:YA103,Ce:Y₃Al₅O₁₂,and Ce:LaA103.For Ce:YAlO₃,the excitation spectrum is very similar with the absorption spectrum;for Ce:Y₃Al₅O₁₂ and Ce:LaAlO₃,the excitation spectra are different from the absorption spectra.Further,Ce:YAlO₃ has better scintillation performance than Ce:Y₃Al₅O₁₂ whereas Ce:LaAlO₃ has not demonstrated scintillation performance to date.We also provide reasonable explanations for these experimental phenomena from the viewpoint of energy level structure.     

Gd1-xEuxAl3(BO3)4纳米晶的合成及其发光性能

以高温固相反应法合成了Gd_1-xEu_xAl₃(BO₃)₄:Eu³⁺纳米荧光粉。使用XRD分析确定了样品的物相,并根据谢乐公式计算出其微晶的纳米粒度。采用了“粉末悬浮法”以甘油为分散介质,在RF540荧光光度计上测试了纳米晶荧光粉的激发光谱和发射光谱。GdAl₃(BO₃)₄基质本身发光,GdAl₃(BO₃)₄:Eu纳米荧光粉表现了Eu³⁺的特征发射光谱,其中最强峰为⁵D₀→⁷F₂发射,表明晶体结构中没有对称中心格位。实验表明在GdAl₃(BO₃)₄:Eu纳米晶荧光粉中,存在Gd³⁺对Eu³⁺发光的基质敏化作用。     

稀土离子(Eu3+,Tb3+,Ce3+)掺杂ZnAl2O4/SiO2微晶玻璃的制备与发光性能

采用凝胶法分别制备出4.5ZnO-5.5Al₂O₃-90SiO₂(ZAS)以及ZAS[DK]:RE³⁺ (RE=Eu,Tb,Ce) 透明微晶玻璃。利用X射线衍射仪(XRD)、透射电子显微镜(TEM)和荧光光谱仪(PL)等测试手段,研究了稀土离子掺杂浓度对ZAS微晶玻璃的结构和发光性能的影响。XRD结果表明,ZAS[DK]:RE³⁺ (RE=Eu,Tb,Ce)微晶玻璃包含ZnAl₂O₄晶相和SiO₂非晶相,ZnAl₂O₄平均晶粒尺寸约为30 nm,稀土离子的掺杂没有显著改变原来的ZnAl₂O₄晶体结构。TEM结果表明,900 ℃时ZnAl₂O₄从ZAS体系中析出。PL光谱显示,Eu³⁺ 存在 ⁵D₀→⁷F₂跃迁,ZAS[DK]:Eu³⁺在611 nm 处发出强烈的红色光;由于Tb³⁺ 的⁵D₄→⁷F₅ 跃迁,ZAS[DK]:Tb³⁺在541 nm 处发出明亮的绿色光;ZAS[DK]:Ce³⁺ 在381 nm处显示了蓝光发射,对应于Ce³⁺ 的5d→4f 轨道跃迁。ZAS[DK]:RE³⁺ (RE=Eu, Tb, Ce)的PL发射光谱存在着浓度猝灭现象,Eu³⁺、Tb³⁺ 和Ce³⁺的最佳单掺杂摩尔分数分别为20%、20%和3%。CIE色度图表明,ZAS[DK]: RE³⁺ (RE=Eu,Tb,Ce)的色坐标分别位于红光、绿光和蓝光区域。实验结果表明,ZAS:RE³⁺ (RE=Eu,Tb,Ce) 微晶玻璃是一种良好的可用于全色显示的白光LED材料。     

YTi(Fe1-xCox)11的磁性和穆斯堡尔谱的研究

YTi(Fe_1-xCo_x)₁₁在012型四方结构,居里温度随Co含量的增加而提高,本文为了揭示YTi(Fe_1-xCo_x)₁₁磁性与微观结构的联系,对这一系列化合物进行穆斯堡尔谱研究,在室温下,测量YTi(Fe_1-xCo_x)₁₁(其中x=0.0,0.2,0.4)的穆斯堡尔谱,最佳拟合结果证实在这种化合物中,Co原子优先占据j和f晶位,在所测样品中,超精细场在x=0.2处出现极值,这与YTi(Fe_1-xCo_x)₁₁饱和磁化强度测量结果相符合。并对YTi(Fe_1-xCo_x)₁₁,Y₂(Fe_1-xCo_x)₁₄和YTi(Fe_1-xCo_x)₁₁的穆斯堡尔谱的实验结果进行比较,分析在YTiFe₁₁中与Y₂Fe₁₄B中的3d电子能带结构的差异。 关键词：     

高分子网络凝胶法低温合成YAG：Tb3+荧光粉

以金属硝酸盐为原料,丙烯酰胺为聚合单体以及N,N-亚甲基双丙烯桥酰胺为胶联剂,采用高分子网络凝胶法在低温下合成精细粒度Y₃Al₅O₁₂:Tb³⁺(YAG:Tb³⁺)荧光粉。分别用热重-差热分析(TG-DTA)、X射线衍射(XRD)、扫描电子显微镜(SEM),以及激发和发射光谱测量对样品进行了表征,考察了烧结温度对样品结晶程度、颗粒大小的影响,以及样品发光性能与烧结温度和Tb³⁺浓度的关系。结果表明:YAG晶相形成温度为850℃;粉体颗粒大小均匀,随着烧结温度的升高,颗粒粒径增大,结晶程度提高;观察到Tb³⁺中4f-5d的吸收带以及⁵D₄-⁷F_j(j=6,5,4,3)的特征发射带,最强吸收与最强发射分别发生在272,541.8 nm,与量子理论(E=1.24/λ)的计算结果相吻合,其发光强度随烧结温度的升高而增强;观察到了Tb³⁺在Y₃Al₅O₁₂中的浓度猝灭现象。     

Enhanced luminescence from transparent Ni-doped MgO–Al2O3–SiO2 glass ceramics by Ga2O3 addition

Transparent Ni²⁺-doped MgO–Al₂O₃–SiO₂ glass ceramics without and with Ga₂O₃ were synthetized. The precipitation of spinel nanocrystals, which was identified as solid solutions in the glass ceramics, could be favored by Ga₂O₃ addition and their sizes were about 7.6 nm in diameter. The luminescent intensity of the Ni²⁺-doped glass ceramics was largely enhanced by Ga₂O₃ addition which could mainly be caused by increasing of Ni²⁺ in the octahedral sites and the reduction of the mean frequency of phonon density of states in the spinel nanocrystals of solid solutions. The full width at half maximum (FWHM) of emissions for the glass ceramics with different Ga₂O₃ content was all more than 200 nm. The emission lifetime increased with the Ga₂O₃ content and the longest lifetime is about 250 μs. The Ni²⁺-doped transparent glass ceramics with Ga₂O₃ addition have potential application as broadband optical amplifier and laser materials.     

Dramatic reduction in dark current of β-Ga2O3 ultraviolet photodectors via β-(Al0.25Ga0.75)2O3 surface passivation

Solar-blind ultraviolet photodetectors with metal-semiconductor-metal structure were fabricated based on β -(Al_0.25Ga_0.75)₂O₃/β -Ga₂O₃ film grown by metal-organic chemical vapor deposition. It was known that various surface states increase dark current and a large number of defects can hinder the transport of carriers, resulting in low switching ratio and low responsivity of the device. In this work, β -(Al_0.25Ga_0.75)₂O₃ films are used as surface passivation materials. Owning to its wide band gap, we obtain excellent light transmission and high lattice matching with β -Ga₂O₃. We explore the change and mechanism of the detection performance of the β -Ga₂O₃ detector after β -(Al_0.25Ga_0.75)₂O₃ surface passivation. It is found that under the illumination with 254 nm light at bias 5 V, the β -(Al_0.25Ga_0.75)₂O₃/β -Ga₂O₃ photodetectors show dark current of just 18 pA and high current on/off ratio of 2.16×10⁵. The dark current is sharply reduced about 50 times after passivation of the β -Ga₂O₃ surface, and current on/off ratio increases by approximately 2 times. It is obvious that β -Ga₂O₃ detectors with β -(Al_0.25Ga_0.75)₂O₃ surface passivation can offer superior detector performance.     

全光谱照明LED中的蓝绿色荧光粉研究

采用高温固相法合成了BaSi₂O₂N₂:Eu²⁺蓝绿色荧光粉,在440~460 nm蓝光激发下,该荧光粉发射峰值波长488 nm的蓝绿色光。通过共掺杂微量Mg²⁺和Ge⁴⁺离子,BaSi₂O₂N₂:Eu²⁺蓝绿色荧光粉的热猝灭性能显著提升。在蓝光芯片激发下,使用BaSi₂O₂N₂:Eu²⁺蓝绿色荧光粉搭配Y₃（Al,Ga）₅O₁₂:Ce³⁺黄绿色荧光粉以及CaAlSiN₃:Eu²⁺红色荧光粉,可以封装色温6 500 K、显色指数Ra达到96.5、所有特殊显色指数R1~R15都大于90的全光谱白光LED。通过封装老化测试,Mg²⁺和Ge⁴⁺离子掺杂的BaSi₂O₂N₂:Eu²⁺蓝绿色荧光粉较未掺杂的荧光粉老化性能提升近1倍。     

EFFECT OF THE SUBSTITUTION OF Ga ON THE STRUCTURE AND MAGNETIC PROPERTIES OF Dy2Fe17 COMPOUND

Dy₂Fe_17-xGa_x (x = 0,1,2,3,4, 5 and 6) compounds were prepared by arc melting. These compounds are of single phase, having a hexagonal Th₂Ni₁₇-type structure fox x=0 and rhombohedral Th₂Zn₁₇-type structure for x≥1. The substitution of Ga for Fe in the Dy₂Fe₁₇ leads to a linear increase of unit-cell volumes. The saturation magnetization M_s at 1.5K is found to decrease linearly with increasing Ga concentration, from 65emu/g for x= 0 to 5emu/g for x = 6; and the Fe magnetic moment μ_Fe is almost independent of Ga concentration. The Curie temperature T_C is found first to increase with increasing Ga content x, and goes through a maximum value of 559 K at about x = 3, then decreases. The sharp increase of T_C at lower Ga content may result from the increase of unit cell volumes. Dy₂Fe_17-xGa_x compounds with x≤5 exhibit easy plane anisotropy at room temperature, and those with x = 6 possess easy-axis.     

铁电单晶(KxNa1-x)0.4(SryBa1-y)0.8Nb2O6的光学性质和线性电光效应

本文介绍铁电单晶(K_xNa_1-x)_0.4(Sr_yBa_1-y)_0.8Nb₂O₆的光学性质和线性电光效应的测量。实验结果表明,这种晶体具有较大的光学双折射,透光范围由4000?到5.6μm。晶体具有低的线性电光调制的半波电压,其电光调制价值指数n₀³·γ_c高达730×10 关键词：     

Sr2+对白光LED用荧光粉YAG:Ce3+的增红研究

采用共沉淀法合成Y_2.78-xSr_xGd_0.1Al₅O₁₂∶0.06Ce³⁺系列荧光粉,用X射线衍射仪、荧光分光光度计对粉体晶型、发光性能进行表征。采用HSP-6000光谱分析仪,测荧光粉与InGaN/GaN芯片配合所得白光的色温。结果表明,Sr²⁺对其波长和发光强度有显著影响:波长随着x的增大先红移,然后发生微弱蓝移。当x<0.05时,发光强度几乎不变;x在0.05~0.1之间时,发光强度减弱缓慢;x>0.1时,发光强度迅速减弱。随着波长和发光强度的变化,色温先降低后升高。 当x>0.2时出现杂相A,对荧光粉发光性能有负面效应。     

掺杂Y2O3和BaCeO3提高MOD-YBCO超导性能的研究

本文通过在前驱液中添加过量钇盐和铈的有机盐,采用三氟乙酸盐-金属有机沉积法(TFA-MOD) 在铝酸镧单晶基体上制备了含有纳米氧化钇和纳米铈酸钡的YBCO薄膜. 与纯YBCO薄膜相比,掺杂Y₂O₃/BaCeO₃的YBCO膜的临界转变温度几乎保持不变,为91 K左右. 而掺杂Y₂O₃/BaCeO₃的YBCO膜的临界电流密度达到5.0 MA/cm² (77 K, 0T), 是纯YBCO膜临界电流密度的1.5倍.薄膜中的Y₂O₃和BaCeO₃可能在YBCO内部起到了 有效的钉扎磁通作用. 关键词： 钇钡铜氧薄膜 2O₃和纳米BaCeO₃')" href="#">纳米Y₂O₃和纳米BaCeO₃ 磁通钉扎 三氟乙酸盐-金属有机沉积     

非晶锂离子导体B2O3-Li2O-LiCl一Al2O3中VO2+的电子自旋共振

两种非晶锂离子导体B₂O₃-0.7Li₂O-0.7LiCl-xAl₂O₃-0.1V₂O₅(x=0.05和0.15)的电子自旋共振谱研究表明:(i)ESR线型是高斯型,证实V₂O₅添加量适当;(ii)超精细结构来源于VO²⁺络离子,具有四角对称性,属C_4v群。越精细耦合张量的平行分量平均值A_//=0.0175cm^-1,垂直分量A_⊥=0.0063cm^-1。由g_//(g_⊥)求出其基态²B_2g与第一激发态²E_g的能级间距△₁=2.46×10⁴ cm^-1,基态与第二激发态²B_1g的能级间距△₂=3.03×10⁴ cm^-1;(iii)变温实验证实:Al₂O₃组分较少(x=0.05)的非晶ESR强度比x=0.15的非晶高3倍至2倍,而Al₂O₃组分越多则ESR强度随温升下降越小。     

Bi-YIG的穆斯堡尔谱研究

本文对Y_3-xBi_xFe₅O₁₂石榴石型铁氧体(x=0,0.06,0.15,0.32,0.57,0.85,1.00)的穆斯堡尔谱进行了讨论。对此材料的居里温度随其Bi含量x的增加而升高的机理提出了初步看法。 关键词：     

MOCVD方法生长ZnO微米柱的结构与光学性质

通过X射线衍射、扫描电子显微镜和变温光致发光光谱对MOCVD方法生长在蓝宝石衬底上的ZnO微米柱材料的结构及发光特性进行了表征.X射线衍射结果表明,ZnO具有良好的c轴择优取向,扫描电子显微镜图中可观察出ZnO微米在呈六角结构生长,半径约为0.5～1.5μm.样品的发光光谱通过He-Cd激光器的325nm线激发,从光谱中发现低温(81K)下出现极强的与激子相关的带边发光峰,温度升高到360K时与自由激子相关的紫外发射峰仍然是清晰可见.     

Growth and luminescent properties of Yb—doped oxide single crystals for scintillator application

Rod-shaped (Lu_1−xYb_x)₃Al₅O₁₂ with x=0.05, 0.15, 0.30 and (Y_1−xYb_x)AlO₃ with x=0.05, 0.10, 0.30 single crystals were grown by the micro-pulling-down method. Edge-defined film-fed growth method was used to prepare (Y_0.9Yb_0.1)VO₄ crystal, while Ca₈(La_1.98Yb_0.02)(PO₄)₆O₂ crystal was grown by the Czochralski method. Luminescence of these crystals was studied with main attention paid to the charge transfer emission of Yb³⁺. Temperature tuned decay times in the time scale of units—tens of nanosecond was measured as a feature possibly interesting for an application in scintillation detectors in positron emission tomography.