HREELS of H/GaN(0001): evidence for Ga termination

Two issues relevant to the growth and processing of GaN are the termination of the GaN(0001) surface and its reaction with hydrogen. We have used high-resolution electron energy loss spectroscopy (HREELS), low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES) to study the adsorption of hydrogen on MOCVD-grown GaN(0001). LEED of the sputtered and annealed surface shows evidence of facetting. No adsorbate vibrations are observed on the clean surface by HREELS, only Fuchs–Kliewer phonons at intervals of 700 cm⁻¹. Following exposure of the clean GaN surface to hydrogen atoms, HREEL spectra show adsorbate loss peaks at 2580, 3280, and 3980 cm⁻¹. The Ga–H stretching vibration at 1880 cm⁻¹ becomes evident when the HREEL spectrum is deconvoluted to remove the phonon multiple-loss peaks. We assign the 2580, 3280, and 3980 cm⁻¹ peaks to combination modes of the Ga–H stretch and phonon(s). Upon dosing with deuterium, the Ga–D bending mode is observed at 400 cm⁻¹. No vibrational peaks due to N–H (N–D) species are observed after H (D) exposure. We conclude that sputtered and annealed GaN(0001) is Ga-terminated.     

Surface defects created by low energy (20 < E < 240 eV) ion bombardment of Ge(001)

Surface defects created on Ge(001) exposed to low energy Xe ions are characterized by in situ scanning tunneling microscopy (STM). The temperature of the sample during ion bombardment is 165 C and ion energies range from 20 to 240 eV. The ion collisions create defects (vacancies and adatoms) which nucleate and form vacancy and adatom islands. For fixed total vacancy creation, the vacancy island number density increases with increasing ion energy: the vacancy island number density is 1.6 × 10⁻²⁰ cm⁻² for 40 eV ion bombardment and increases to 4.4 × 10⁻²⁰ cm⁻² for 240 eV ion bombardment. The increased nucleation rate for vacancies is attributed to clustering of defects. The sputtering yield of Ge(001) is also measured by STM. The sputtering yield for 20 eV ions is approximately 10⁻³ per ion but the net yield for surface defects (sum of adatoms and vacancies) is an order of magnitude higher, 10⁻², due to adatom-vacancy pair creation.     

An FTIR study of the bonding of methoxy on Ni(100): effects of coadsorbed sulfur, carbon monoxide and hydrogen

The vibrational spectra of CH₃O_(a), CD₃O_(a), CDH₂O_(a) and CD₂HO_(a) on Ni(100) are analyzed and interpreted in terms of resonances between fundamental modes and either combinations or overtones. Analysis of the symmetry of the modes observed suggests that methoxy binds normal to the surface with C_s symmetry, at least at low coverages. Two distinct vibrational bands emerge in the vibrational spectrum of methoxy in the v(CO) region as the coverage increases which are attributed to bonding in four-fold hollow sites and bridging sites. These bands exhibit blue shifts of about 25 cm⁻¹ with increasing coverage up to the saturation coverage. The vibrational bands in the v(CH) region appear concomitantly at all coverages and shift down 12 cm⁻¹ as the coverage is increased. These shifts are attributed to changes in the metal-oxygen bond which are reflected in changes in the strength of the C---O and C---H bonds. Affects on the bonding also appear to occur with the coadsorption of hydrogen or CO with methoxy. Coadsorption of 0.36 ML hydrogen with 0.04 ML methoxy induces blue shifts of 15 and 7 cm⁻¹ for the v(CO) bands at 949 and 984 cm⁻¹, respectively. Adsorbing 0.43 ML of CO with 0.04 ML methoxy (and 0.04 ML hydrogen) causes a red shift of 20 and 12 cm⁻¹ for these bands. A drastic drop in mode intensities for methoxy when CO is coadsorbed suggests that the methoxy tilts away from the surface normal. Pre-adsorbing sulfur on the Ni(100) surface reduces the amount of methoxy formed from methanol, but the v(CO) methoxy bands are unshifted in frequencies relative to their position for the same methoxy coverage on the clean surface.     

Adsorption and dissociation of Si2H6 on Ge(001)2 × 1

Adsorption and thermally-induced dissociation of disilane (Si₂H₆) on clean Ge(001)2 × 1 surfaces have been investigated using a combination of Auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS), reflection high-energy electron diffraction (RHEED), and scanning tunneling microscopy (STM). With initial Si₂H₆ exposure at room temperature, the Si surface coverage increased monotonically, the EELS surface dangling bond peak intensities continuously decreased, and the intensity of half-order RHEED diffraction rods decreased. The low-coverage Si₂H₆ sticking probability at 300 K on Ge(001) was found to be 0.5 while the saturation coverage was 0.5 ML. A new EELS feature, GSH, involving Si-H and Ge-H bond states was observed at Si₂H₆ exposures φ 3.4 × 10¹³ cm⁻². In contrast to Si₂H₆ -saturated Si(001), the saturated Ge(001) surface significant fraction of dimerized bonds. Adsorbed overlayers were highly disordered with the primary species on saturated surfaces being SiH₂, GeH, and undissociated SiH₃· Si₂H₆-saturated Ge(001)2 × 1 substrates were annealed for l min at temperatures T_a between 425 and 825 K. Admolecules were mobile at T_a = 545 K giving rise to significant ordering in one-dimensional chains. By T_a = 605 K, essentially all of the admolecules were captured into coarsened islands. Dangling-bond EELS peaks reappeared by 625 K and the intensities of the half-order RHEED diffraction rods increased. Ge segregation to the surface, which began at T_a 625 K, occurred rapidly at T_a 675 K. All H was desorbed by 725 K.     

Hydrogen adsorption on Mo1−xRex(110) (x=0–0.25) surfaces

The effects of adsorbed H on the Mo_1−xRe_x(110), x=0, 0.05, 0.15, and 0.25, surfaces have been investigated using low-energy electron diffraction (LEED) and high-resolution electron energy loss spectroscopy (HREELS). For the x=0.15 alloy only, a c(2×2) LEED pattern is observed at a coverage Θ0.25 ML. A (2×2) pattern is observed for H coverages around Θ0.5 ML from surfaces with x=0, 0.05, and 0.15. Both c(2×2) and (2×2) patterns are attributed to reconstruction of the substrate. At higher coverages, a (1×1) pattern is observed. For the alloy surface with x=0.25, only a (1×1) pattern is obtained for all H coverages. Two H vibrations are observed in HREELS spectra for all Re concentrations, which shift to higher energies at intermediate coverages. Both peaks exhibit an isotopic shift, confirming their assignment to hydrogen. For Re concentrations of x=0.15 and higher, a third HREELS peak appears at 50 meV as H (D) coverage approaches saturation. This peak does not shift in energy with isotopic substitution, yet cannot be explained by contamination. The intrinsic width of the loss peaks depends on the Re concentration in the surface region and becomes broader with increasing x. This broadening can be attributed to surface inhomogeneity, but may also reflect increased delocalization of the adsorbed hydrogen atom.     

The adsorption of water on Ni(110): Monolayer, bilayer and related phenomena

The adsorption of water of Ni(110) has been studied by nuclear reaction analysis (NRA), thermal desorption spectroscopy (TDS), LEED and work function measurements (Δφ). The major findings of this study are: (1) the saturation coverage of the first chemisorbed layer of water is slightly less than 0.5 water molecules per surface Ni atom or 0.5 ML (1 ML = 1 MONOLAYER = 1.14 × 10¹⁵ molecules cm⁻²) and the layer exhibits a c(2 × 2) LEED pattern; (2) this water desorbs in three separate desorption states; (3) the slightly less strongly bound, second layer of water can be distinguished from subsequent “ice” layers by a discrete work function change. These results are discussed in terms of a recently published model of Benndorf and Madey [C. Benndorf and T.E. Madey, Surf. Sci. 194 (1988) 63].     

A theoretical study of CHx chemisorption on the Ni(100) and Ni(111) surfaces

Cluster model calculations have been performed for CH_x, x = 0−3, chemisorbed on Ni(100) and Ni(111). The predicted chemisorption energies, at the present level of theory, based on bond-prepared clusters for Ni(100) are for carbon 150 kcal/mol, for CH 136 kcal/mol, for CH₂ 91 kcal/mol and for CH₃ 46 kcal/mol. The corresponding energies for Ni(111) are for CH 120 kcal/mol, for CH₂ 88 cal/mol and for CH₃ 49 kcal/mol. These chemisorption energies lead to similar stabilities for all CH_x fragments on both Ni(100) and Ni(111). Large basis sets and multi-reference correlation treatments are found to be very important in particular for the multiply bonded species. The vibrational C-H stretching frequencies predicted for CH_x on Ni(111) are for CH 3054 cm⁻¹ (2980 cm⁻¹), for CH₂ 3204 cm⁻¹ and for CH₃ 2709 cm⁻¹ (2680 cm⁻¹), where the available experimental values are given in parent The predicted ionization spectra of adsorbed CH_x are also in general agreement with experimental findings.     

Metastable (2S) helium atom scattering from NiO(100) and Cu(100) surfaces

The scattering of metastable 2³S He atoms (He*) from cleaved NiO(100) as well as from clean and CO-covered Cu(100) surfaces has been studied. For these varied surfaces, which were characterized in situ by ground state He atom scattering, only broad He* angular distributions without any diffraction peaks were observed. For metastable He atoms scattered from the clean Cu(100) surface a total survival probability of 1×10⁻⁶ was determined. For NiO(100) and the CO-covered Cu(100) surface values of about 1×10⁻⁵ were obtained. Time-of-flight spectra of the surviving He* atoms revealed a substantial energetic broadening which increases with the substrate temperature. This behaviour indicates a large well depth for the He*–surface interaction potential and is discussed in terms of an enhanced multiphonon excitation and/or trapping probability upon the scattering.     

A LEED, TPD and HREELS investigation of NO adsorption on Sn/Pt(111) surface alloys

The adsorption of NO on Pt(111), and the (2 × 2)Sn/Pt(111) and (√3 × √3)R30°Sn/Pt(111) surface alloys has been studied using LEED, TPD and HREELS. NO adsorption produces a (2 × 2) LEED pattern on Pt(111) and a (2√3 × 2√3)R30° LEED pattern on the (2 × 2)Sn/Pt(111) surface. The initial sticking coefficient of NO on the (2 × 2)Sn/Pt(111) surface alloy at 100 K is the same as that on Pt(111), S₀ = 0.9, while the initial sticking coefficient of NO on the (√3 × √3)R30°Sn/Pt(111) surface decreases to 0.6. The presence of Sn in the surface layer of Pt(111) strongly reduces the binding energy of NO in contrast to the minor effect it has on CO. The binding energy of β-state NO is reduced by 8–10 kcal/mol on the Sn/Pt(111) surface alloys compared to Pt(111). HREELS data for saturation NO coverage on both surface alloys show two vibrational frequencies at 285 and 478 cm⁻¹ in the low frequency range and only one N-O stretching frequency at 1698 cm⁻¹. We assign this NO species as atop, bent-bonded NO. At small NO coverage, a species with a loss at 1455 cm⁻¹ was also observed on the (2 × 2)Sn/ Pt(111) surface alloy, similar to that observed on the Pt(111) surface. However, the atop, bent-bonded NO is the only species observed on the (√3 × √3)R30°Sn/Pt(111) surface alloy at any NO coverage studied.     

Adsorption and reaction of oxygen and deuterium on a Pd(110) surface, studied by Δφ and TDS

The co-adsorption of oxygen and deuterium at 100 K on a Pd(110) surface has been studied by measurements of the change in work function (Δφ) and by thermal desorption spectroscopy (TDS). When the surface with co-adsorbed species is heated, the adsorbates O and D react to form D₂O which desorbs from the surface at T > 200 K. The D₂O desorption peaks shift continuously to lower temperatures as the surface D coverage (θ_D) increases. The maximum production of D₂O is estimated to be 0.26 ML (1 ML = 9.5 × 10¹⁴ atoms cm⁻²), resulting from reaction in a layer containing 0.65 ML D and 0.3 ML O. The maximum work function increase caused by adsorption of D to saturation onto oxygen precovered Pd(110) decreases almost linearly with Δφ_O of the oxygen precovered surface. On a surface with pre-adsorbed D however, the maximum Δφ increase contributed by oxygen adsorption decreases abruptly at Δφ_D > 200 mV. This sharp change occurs at θ_D > 1 ML and is believed to be associated with the development of the reconstructed (1 × 2) phase of D/Pd(110).     

Vibrational study of silicon oxidation: H2O on Si(100)

The vibrational spectrum of water dissociatively adsorbed on Si(100) surfaces is obtained with surface infrared absorption spectroscopy. Low frequency spectra (< 1450 cm⁻¹ are acquired using a buried CoSi₂ layer as an internal mirror to perform external reflection spectroscopy. On clean Si(100), water dissociates into H and OH surface species as evidenced by EELS results [1] in the literature which show a Si---H stretching vibration (2082 cm⁻¹), and SiO---H vibrations (O---H stretch at 3660 cm⁻¹ and the Si---O---H bend and Si---O stretch of the hydroxyl group centered around 820 cm⁻¹). In this paper, infrared (IR) measurements are presented which confirm and resolve the issue of a puzzling isotopic shift for the Si---O mode of the surface hydroxyl group, namely, that the Si---O stretch of the O---H surface species formed upon H₂O exposure occurs at 825 cm⁻¹, while the Si---O stretch of the ---OD surface species formed upon D₂O exposure shifts to 840 cm⁻¹, contrary to what is expected for simple reduced mass arguments. The higher resolution of IR measurements versus typical EELS measurements makes it possible to identify a new mode at 898 cm⁻¹, which is an important piece of evidence in understanding the anomalous frequency shift. By comparing the results of measurements for adsorption of H¹⁶₂O, H¹⁸₂O and D₂O with the results from recently performed first-principles calculations, it can be shown that a strong vibrational interaction between the Si---O stretching and Si---O---H bending functional group vibrations of the hydroxyl group accounts for the observed isotopic shifts.     

Proton conductive amorphous thin films of tungsten oxide clusters with acidic ligands

Three kinds of peroxo-polytungstic acid (PPTA, C-PPTA and N-PPTA) were obtained by reacting hydrogen peroxide with metallic tungsten, tungsten carbide or tungsten nitride, respectively. Polytungstates, C-PPTA and N-PPTA, were found to contain oxalate and nitrate ligands. Their proton conductivities were compared using thin film specimens spin-coated from their water solution. Conductivity of each as-coated film was in the range from 10⁻³ to 10⁻⁴ S cm⁻¹ under the relative humidity of 40% (25 °C). A sharp decrease in conductivity (to less than 10⁻⁷ S cm⁻¹ at 25 °C) was observed for PPTA without acidic ligands after thermal treatment at 80 °C. However, the effect of thermal treatment on C-PPTA or N-PPTA was much milder. A 80 °C-treated C-PPTA film showed the conductivity of 1.0 × 10⁻⁵ S cm⁻¹ (25 °C) with a very weak dependency on ambient humidity.     

Raman study of HgBa2Can−1CunO2n+2+δ (n=1,2,3,4 and 5) superconductors

Polarized micro-Raman scattering measurements have been performed on the five members of the HgBa₂Ca_n−1Cu_nO_2n+2+δ (n=1,2,3,4 and 5) high-T_c superconductor family using different laser frequencies. Local laser annealing measurements were carried out to investigate the variation of the Raman spectra with the excess oxygen content, δ. A systematic evolution of the spectra, which display mainly peaks near 590, 570, 540 and 470 cm⁻¹, with increasing number of CuO₂ layers has been observed; its origin has been shown to lie in the variation of the interstitial oxygen content. In addition to confirming that the 590 cm⁻¹ mode represents vibration of apical oxygens in the absence of neighboring excess oxygen, the 570 cm⁻¹ mode, which may be composed of some finer structures, has been assigned to the vibration of the apical oxygen modified by the presence of the neighboring excess oxygens. The 540 and 470 cm⁻¹ modes may represent the direct vibration of excess oxygens. The implication of possible different distribution sites of excess oxygens is discussed. All other observed lower-frequency modes are also assigned.     

Structural and electrical properties of crystalline (1−x)Ta2O5−xTiO2 thin films fabricated by metalorganic decomposition

Polycrystalline (1−x)Ta₂O₅−xTiO₂ thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO₂ layer was formed at the (1−x)Ta₂O₅−xTiO₂/Si interface. Thin films with 0.92Ta₂O₅–0.08TiO₂ composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×10¹¹ cm⁻² eV⁻¹, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm² was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10⁻⁹ A/cm² up to an applied electric field of 6 MV/cm.     

Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers

Silicon nanocrystals have been synthesized in SiO₂ matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO₂ films grown on crystalline Si at energies of 30–55 keV, and with doses of 5×10¹⁵, 3×10¹⁶, and 1×10¹⁷ cm⁻². Implanted samples were subsequently annealed in an N₂ ambient at 500–1100°C during various periods. Photoluminescence spectra for the sample implanted with 1×10¹⁷ cm⁻² at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO₂ sample is implanted at a substrate temperature of 400°C with an energy of 30 keV and a low dose of 5×10¹⁵ cm⁻². It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO₂.     

Structural and compositional analysis of InBixAsySb(1−x−y) films grown on GaAs(0 0 1) substrates by liquid phase epitaxy

The growth of epitaxial InBi_xAs_ySb_(1−x−y) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy. Orientation and single crystalline nature of the film have been confirmed by X-ray diffraction. Scanning electron micrograph shows abrupt interface at micrometer resolution. Surface composition of Bi(x) and As(y) in the InBi_xAs_ySb_(1−x−y) film was measured using energy dispersive X-ray analysis and found to be 2.5 and 10.5 at.%, respectively, and was further confirmed with X-ray photoelectron spectroscopy. Variation of the composition with depth of the film was studied by removing the layers with low current (20 μA) Ar⁺ etching. It was observed that with successive Ar⁺ etching, In/Sb ratio remained the same, while the As/Sb and Bi/Sb ratios changed slightly with etching time. However after about 5 min etching the As/Sb and Bi/Sb ratios reached constant values. The room temperature band gap of InBi_0.025As_0.105Sb_0.870 was found to be in the range of 0.113–0.120 eV. The measured values of mobility and carrier density at room temperature are 3.1×10⁴ cm² V⁻¹ s⁻¹ and 8.07×10¹⁶ cm⁻³, respectively.     

On the luminescence of LiBaF3:Eu

From the temperature dependence of the line—band luminescence intensity ratio of LiBaF₃:Eu²⁺ a 4f−5d activation energy (Δ) of 800 cm⁻¹ is derived, being much higher than the value reported in the literature (100 cm⁻¹). The temperature dependence of the luminescence decay can be well described with Δ = 800 cm⁻¹ and with 4f−4f and 5d−4f radiative probabilities of 4×10²s⁻¹ and 6×10⁵s⁻¹, respectively.     

The third-order optical nonlinearity of The pyrochlore phase 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 thin film on quartz

The xPb(Mg_1/3Nb_2/3)O₃–(1−x)PbTiO₃ (PMNT) (with x=0.7) thin film is prepared on quartz substrates prepared using a sol–gel process. The PMNT thin film has a well-crystallized pyrochlore phase structure. The sign and magnitude of both real and imaginary parts of third-order nonlinear susceptibility χ⁽³⁾ of the thin film have been determined by the Z-scan technique performed at 800 nm with a femtosecond laser. The nonlinear refraction index coefficient γ, the nonlinear absorption coefficient β of the thin film are 1.37×10⁻¹² cm²/W and −6.73×10⁻⁸ m/W, respectively. The real and imaginary part of the third-order nonlinear susceptibility of the film are 1.06×10⁻¹⁷ and −1.65×10⁻¹⁹ m²/V², respectively. The results suggested that the nonlinearity is dominated by the refractive for the film.     

Chemically deposited copper oxide thin films: structural, optical and electrical characteristics

Thin films of copper oxide with thickness ranging from 0.05–0.45 μm were deposited on microscope glass slides by successively dipping them for 20 s each in a solution of 1 M NaOH and then in a solution of copper complex. Temperature of the NaOH solution was varied from 50–90°C, while that of the copper solution was maintained at room temperature. X-ray diffraction patterns showed that the films, as prepared, are of cuprite structure with composition Cu₂O. Annealing the films in air at 350°C converts these films to CuO. This conversion is accompanied by a shift in the optical band gap from 2.1 eV (direct) to 1.75 eV (direct). The films show p-type conductivity, 5×10⁻⁴ Ω⁻¹ cm⁻¹ for a film of thickness 0.15 μm. Electrical conductivity of this film increases by a factor of 3 when illuminated with 1 kW m⁻² tungsten halogen radiation. Annealing in a nitrogen atmosphere at temperatures up to 400°C does not change the composition of the films. However, the conductivity in the dark as well as the photoconductivity of the film increases by an order of magnitude. The electrical conductivity of the CuO thin films produced by air annealing at 400°C, is high, 7×10⁻³ Ω⁻¹ cm⁻¹. These films are also photoconductive.     

Analysis of frequency-dependent series resistance and interface states of In/SiO2/p-Si (MIS) structures

In this work, the investigation of the interface state density and series resistance from capacitance–voltage (C–V) and conductance–voltage (G/ω−V) characteristics in In/SiO₂/p-Si metal–insulator–semiconductor (MIS) structures with thin interfacial insulator layer have been reported. The thickness of SiO₂ film obtained from the measurement of the oxide capacitance corrected for series resistance in the strong accumulation region is 220 Å. The forward and reverse bias C–V and G/ω−V characteristics of MIS structures have been studied at the frequency range 30 kHz–1 MHz at room temperature. The frequency dispersion in capacitance and conductance can be interpreted in terms of the series resistance (R_s) and interface state density (D_it) values. Both the series resistance R_s and density of interface states D_it are strongly frequency-dependent and decrease with increasing frequency. The distribution profile of R_s–V gives a peak at low frequencies in the depletion region and disappears with increasing frequency. Experimental results show that the interfacial polarization contributes to the improvement of the dielectric properties of In/SiO₂/p-Si MIS structures. The interface state density value of In/SiO₂/p-Si MIS diode calculated at strong accumulation region is 1.11×10¹² eV⁻¹ cm⁻² at 1 MHz. It is found that the calculated value of D_it (≈10¹² eV⁻¹ cm⁻²) is not high enough to pin the Fermi level of the Si substrate disrupting the device operation.