Out-of-plane exchange bias and magnetic anisotropy in MnPd/Co multilayers

Magnetic and structural properties in [MnPd/Co]₁₀ multilayers deposited onto Si(1 1 1) substrates have been investigated. The dependences of anisotropy and exchange bias on the thicknesses of both MnPd and Co layers have been studied. In most of the samples, the out-of-plane magnetic anisotropy and both large out-of-plane and in-plane exchange biases have been observed at cryogenic temperature below the blocking temperature T_B≈240 K. With appropriate MnPd and Co thicknesses, we have obtained samples with a large out-of-plane exchange bias along with a large out-of-plane magnetic anisotropy. The origin of the out-of-plane magnetic anisotropy in the samples has been suggested to be due to the formation of CoPd interfacial alloys which have tensile in-plane strains, while the spin structure of the antiferromagnetic layer at the interface which is believed to be responsible for exchange bias may be the same as that of the bulk material. Also, the present study shows that the interplay between the out-of-plane magnetic anisotropy and exchange bias is evident in our multilayers and plays an important role in the out-of-plane exchange-bias mechanism.     

Positive exchange bias in a Ni80Fe20/NixFe1−xO thin-film bilayer

We have measured positive exchange bias in a Ni₈₀Fe₂₀/Ni_xFe_1−xO thin-film nanocrystallite system. A series of solid solution Ni_xFe_1−xO 40 nm thick films capped with 25 nm thick Ni₈₀Fe₂₀ were deposited using a range of %O₂/Ar bombardment energies (i.e. End-Hall voltages). Proper tuning of the deposition conditions results in a Ni₈₀Fe₂₀/Ni_xFe_1−xO (30%O₂/Ar) based bilayer that exhibits a positive exchange bias loop shift of H_ex∼60 Oe at 150 K.     

Magnetic domain structure in Fe78.8−xCoxCu0.6Nb2.6Si9B9 nanocrystalline alloys studied by Lorentz microscopy

The magnetic domain structures of Fe_78.8−xCo_xCu_0.6Nb_2.6Si₉B₉ (x=0, 20, 40, 60) alloys are investigated by Lorentz microscopy coupled with the focused ion beam method. The specimen prepared using the FIB method is found to have a considerably more uniform thickness compared to that prepared using the ion-milling method. In Fe_38.8Co₄₀Cu_0.6Nb_2.6Si₉B₉ and Fe_18.8Co₆₀Cu_0.6Nb_2.6Si₉B₉ alloys, 180° domain walls extending in the direction of the induced magnetic anisotropy are observed. Analysis with Lorentz microscopy reveals that the width of the magnetic domains decreases with an increase in the cobalt content or the induced magnetic anisotropy K_u, that is, the domain width d is proportional to the induced magnetic anisotropy (K_u)^−1/4. On the other hand, in the in situ Lorentz microscopy observation as a function of temperature, magnetic ripple structures are found to appear in a localized area due to the fluctuation of magnetization vectors from 423 K. It is observed that the induced magnetic anisotropy caused by the applied magnetic field at 803 K is not suppressed by the magnetic ripple structures observed at 423–443 K.     

Ferromagnetism of epitaxially grown CaRu1−xMxO3 (M=Ti, Mn) films

Epitaxial thin films of CaRu_1−xM_xO₃ (M=Ti, Mn) were fabricated on a (0 0 1)-SrTiO₃ substrate by spin-coat method using organometallic solutions (metal alkoxides). Results of X-ray diffraction and transmission electron microscopy indicate that the epitaxial films were grown pseudomorphically so as to align the [0 0 l] axis of the CaRu_1−xM_xO₃ films perpendicular to the (0 0 1) plane of the SrTiO₃ substrate. Ferromagnetism and metal-insulator transition are induced by the substitution of transition metal ions. The occurrence of ferromagnetism was explained qualitatively assuming a TiRu₆ cluster model for CaRu_1−xTi_xO₃ film and a mixed valence model for CaRu_1−xMn_xO₃ film. Ferromagnetism was also observed for layered CaRuO₃/CaMnO₃ film and CaRuO₃/CaMnO₃/CaRuO₃/CaMnO₃ multilayer film and the magnetism was explained by an interfacial exchange interaction model with magnetic Mn³⁺, Mn⁴⁺, and Ru⁵⁺ ions.     

Analysis of Raman scattering of Ga1−xMnxAs dilute magnetic semiconductor

Ferromagnetic Ga_1−xMn_xAs layers (where x=1.4-3.0%) grown on (1 0 0) GaAs substrates by molecular beam epitaxy were characterized using Raman spectroscopy. As Mn is introduced into GaAs, a marked increase in disorder in the material occurs, as indicated by the growth of the disorder-allowed transverse-optical Raman line. Another important result is that as the Mn concentration in Ga_1−xMn_xAs increases further beyond ca. 2%, Raman-active coupled-plasmon-longitudinal-optical phonon modes arise, which signals the increasing presence of holes, and thus provides a useful tool for determining their concentration. Using the depletion-layer approach from the Raman spectroscopy data, we determined the carrier concentration for samples with x=2.2% and 3.0% was to be 7.2×10¹⁹ and 8.3×10²⁰ cm⁻³, respectively.     

Preference orientation and magnetic properties of CoxFe3−xO4 nanocrystalline thin films on quartz substrate

Nanocrystalline spinel ferrite thin films of Co_xFe_3−xO₄ (x=0.3$x=0.3$, 0.5, 0.8, and 1.0) have been prepared by RF sputtering on quartz substrate without a buffer layer at room temperature and annealed at the temperature range from 200 to 600 °C in air. The as-sputtered films exhibit the preferred orientation and the high magnetization and coercivity. After annealing, the preferred orientations become poor, but the magnetization and coercivity increase. The sample with a magnetization of 455 emu/cm³, a coercivity of 2.8 kOe, a remanence ratio of 0.72, and a maximum energy product of 2.4 MGOe has been obtained. The influence of Co ions and annealing temperature on the magnetic properties has been discussed.     

Temperature dependence of magnetic anisotropy in nanoparticles of CoxFe(3−x)O4

In this paper we present a study of the magnetic anisotropy constant of nanocrystalline magnetic particles of Co_xFe_(3−x)O₄, with x ranging from 0.05 to 1.6, synthesized by a combustion reaction. The magnetic anisotropy constants were obtained by fitting the high-field part of the major hysteresis loops with the law of approach equation down to temperatures of 4 K and up to fields of 60 kOe. The anisotropy constant depends strongly on both temperature and cobalt content x, exhibiting a nonmonotic dome-shaped dependence on x with a maximum at x=1.0. We found that fits at lower temperatures, i.e., 4 and 72 K, give values of K₁ that are approximately one order of magnitude higher than those at higher temperatures, i.e., 272 and 340 K. For example, K₁ for specimens with x=0.8 and 1.0 are 4.21×10⁷ and 4.22×10⁷ ergs/cm³ at 4 K, and 7.64×10⁶ and 7.51×10⁶ ergs/cm³ at 340 K, respectively. Thus, our determination of temperature-dependence of the anisotropy constant represents an improvement over existing works.     

Magnetoresistive properties of Zn1−xCoxFe2O4 ferrites

The magnetic and magnetoresistive properties of spinel-type Zn_1−xCo_xFe₂O₄ (x=0, 0.2 and 0.4) ferrites are extensively investigated in this study. A large negative magnetoresistance (MR) effect is observed in Zn_1−xCo_xFe₂O₄ ferrites of spinel structure. These materials are either ferrimagnetic or paramagnetic at room temperature, and show a spin-(cluster) glass transition at low temperatures, depending on the chemical compositions. The MR curves as a function of magnetic fields, MR(H), are parabolic at all temperatures for paramagnetic polycrystalline ZnFe₂O₄. The MR for ZnFe₂O₄ at 110 K in the presence of 9 T applied magnetic field is 30%. On the other hand, MR(H) are linear for x=0.2 and 0.4 ferrimagnetic Zn_1−xCo_xFe₂O₄ samples up to 9 T. The MR effect is independent of the sintering temperatures, and can be explained with the help of the spin-dependent scattering and the Yafet–Kittel angle of Zn_1−xCo_xFe₂O₄ mixed ferrites.     

Magnetic properties of the Ce2Fe17−xMnx helical magnets up to high magnetic fields

Magnetic properties of the Ce₂Fe_17−xMn_x, x=0–2, alloys in magnetic fields up to 40 T are reported. The compounds with x=0.5–1 are helical antiferromagnets and those with 1<x?2 are helical ferromagnets or helical antiferromagnets at low and high T, respectively. Mn ions in the system carry average magnetic moment of 3.0±0.2 μ_B that couple antiparallelly to the Fe moments. Easy-plane magnetic anisotropy in the Ce₂Fe_17−xMn_x compounds weakens upon substitution of Mn for Fe. The absolute value of the first anisotropy constant in the Ce₂Fe_17−xMn_x helical ferromagnets decreases slower with increasing temperature than that calculated from the third power of the spontaneous magnetization. Noticeable magnetic hysteresis in the Ce₂Fe_17−xMn_x, x=0.5–2, helical magnets over the whole range of magnetic fields reflects mainly irreversible deformation of the helical magnetic structure during the magnetization of the compounds. A contribution from short-range order (SRO) magnetic clusters to the magnetic hysteresis of the helical magnets has been also estimated.     

Anisotropy dispersion in (CoCrPt)1−x(SiO2)x perpendicular recording media

The distribution of easy axis orientation in perpendicular media is of technological importance because it affects the value of S^* (see Fig. 1), which quantifies the switching field distribution (SFD) and hence partially determines the data density achievable on a given medium. The distribution is controlled by the crystallographic orientation of grains and factors such as intergranular exchange and dipolar coupling. Due to strong demagnetising fields in the perpendicular orientation, traditional measurements of remanence as a function of angle are difficult to interpret and have required the use of large-scale computational models. In this work we have utilised the variation of coercivity H_C with angle, which has the advantage that at H_C the global demagnetising field is zero. Additionally, since such materials follow essentially the Stoner–Wohlfarth mode of reversal, the variation of H_C with angle, H_C(θ), is much greater than that for the remanence. We find that for (CoCrPt)_1−x(SiO₂)_x, where the level of exchange coupling is controlled, the distribution of magnetic easy axes is narrower when the exchange coupling is reduced, but dipolar coupling between the grains is strong and affects the magnetisation reversal significantly.     

Electronic structure calculations for BaSxSe1−x alloys

A series of first principles calculations have been carried out to study structural, electronic properties of BaS_xSe_1−x alloys. We have used the local density as well as the generalized gradient approximations for the exchange-correlation potential. The structural properties of these materials, in particular the composition dependence to the lattice constant and bulk modulus, are found to be linear. It is also found linear relationship between theoretical band gaps and 1/a² (where a is lattice constant).     

Magnetic behavior of MnAs precipitates in Ga1−xMnxAs diluted magnetic semiconductor

Ferromagnetic Ga_1−xMn_xAs layers (where x≈4.7–5.5%) were grown on (1 0 0) GaAs substrates by molecular beam epitaxy. These p-type (Ga,Mn)As films were revealed to have a ferromagnetic structure and ferromagnetism is observed up to a Curie temperature of 318 K, which is ascribed to the presence of MnAs secondary magnetic phases within the film. It is highly likely that the phase segregation occurs due to the high Mn cell temperature around 890–920 °C, as it is well established that GaMnAs is unstable at such a high temperature. The MnAs precipitate in the samples with x≈4.7–5.5% has a Curie temperature T_c≈318 K, which was characterized from field-cooled and zero-field-cooled magnetization curves.     

Synthesis and magnetic characterization of cobalt-substituted ferrite (CoxFe3−xO4) nanoparticles

Cobalt-substituted ferrite nanoparticles were synthesized with a narrow size distribution using reverse micelles formed in the system water/AOT/isooctane. Fe:Co ratios of 3:1, 4:1, and 5:1 were used in the synthesis, obtaining cobalt-substituted ferrites (Co_xFe_3−xO₄) and some indication of γ-Fe₃O₄ when 4:1 and 5:1 Fe:Co ratios were used. Inductively coupled plasma mass spectroscopy (ICP-MS) verified the presence of cobalt in all samples. Fourier transform infrared (FTIR) showed bands at ∼560 and ∼400 cm⁻¹, characteristic of the metal–oxygen bond in ferrites. Transmission electron microscopy showed that the number median diameter of the particles was ∼3 nm with a geometric deviation of ∼0.2. X-ray diffraction (XRD) confirmed the inverse spinel structure typical of ferrites with a lattice parameter of a=8.388 Å for Co_0.61Fe_0.39O₄, which is near that of CoFe₂O₄ (a=8.394 Å). Magnetic properties were determined using a superconducting quantum interference device (SQUID). Coercivities higher than 8 kOe were observed at 5 K, whereas at 300 K the particles showed superparamagnetic behavior. The anisotropy constant was determined based on the Debye model for a magnetic dipole in an oscillating field and an expression relating χ′ and the temperature of the in-phase susceptibility peak. Anisotropy constant values in the order of ∼10⁶ erg/cm³ were determined using the Debye model, whereas anisotropy constants in the order of ∼10⁷ erg/cm³ were calculated assuming Ωτ=1 at the temperature peak of the in-phase component of the susceptibility curve as commonly done in the literature. Our analysis demonstrates that the assumption Ωτ=1 at the temperature peak of χ′ is rigorously incorrect.     

Effect of Cr on the magnetic properties of evaporated CoxCr1−x/Si(1 0 0) and CoxCr1−x/glass thin films

Series of Co_xCr_1−x thin films have been evaporated under vacuum onto Si(1 0 0) and glass substrates. Thickness ranges from 17 to 220 nm, and x from 0.80 to 0.88. Alternating gradient field magnetometer (AGFM) measurements provided saturation magnetization values ranging from 220 to 1200 emu/cm³. Values of squareness exceeding 0.8 have been measured. Coercive field may reach values up to 700 Oe, depending on the percentage of chromium, as well as the substrate nature and the direction of the applied magnetic field. The saturation magnetization value decreases as the Cr content increases. In order to study their dynamical magnetic properties, Brillouin Light Scattering (BLS) measurements have been performed on these samples. Stiffness constant value and anisotropy magnetic field were adjusted to fit the experimental BLS spectra. These results are analyzed and correlated.     

L12 phase formation and giant exchange anisotropy in Mn3Ir/Co–Fe bilayers

The degree of order S of Mn–Ir layers and the exchange anisotropy of Mn–Ir/Co–Fe bilayers were investigated for various chemical compositions of Mn–Ir layers, underlayer materials, and underlayer thicknesses. It was found that: (1) The compositional range over which L1₂-phase Mn₃Ir could be formed is 22–32 at% Ir and giant exchange anisotropy is obtained in this range. (2) Ru is favorable as an underlayer material for avoiding interdiffusion with the Mn–Ir layer during deposition on the temperature elevated substrate. (3) The underlayer thickness could be reduced to 5 nm while maintaining a giant exchange anisotropy in excess of 1 erg/cm².     

Magnetic anisotropy of Tb1−xGdxMn6Sn6 compounds

Magnetization curves of Tb_1−xGd_xMn₆Sn₆ compounds (0?x?1) have been measured for aligned powder samples in the temperature range 4.2–300 K in pulsed magnetic fields up to 30 T. Temperature and concentration dependences of the magnetocrystalline anisotropy constants K₁ and K₂ and concentration dependence of the temperature of spontaneous spin-reorientation transition have been determined. Using these data, we estimated the contribution of the manganese and terbium atoms to the magnetic anisotropy of Tb_1−xGd_xMn₆Sn₆ and analyzed the origin of the appearance of field-induced first-order magnetic phase transition in these compounds.     

Effects of Mn substitution of Co and Fe in spinel CoFe2O4 thin films

Effects of Mn substitution for Co and Fe on the structural and magnetic properties of inverse-spinel CoFe₂O₄ have been investigated. Mn_xCo_1−xFe₂O₄ and Mn_yCoFe_2−yO₄ thin films were prepared by a sol–gel method. The observed increase of the lattice constant of Mn_xCo_1−xFe₂O₄ indicates that Mn²⁺ ions substitute the octahedral Co²⁺ sites. Conversion electron Mössbauer spectroscopy data indicate that a fraction of octahedral Co²⁺ ions exchange sites with tetrahedral Fe³⁺ ions through Mn doping. Vibrating-sample magnetometry data exhibit a large increase of saturation magnetization for both Mn_xCo_1−xFe₂O₄ and Mn_yCoFe_2−yO₄ films compared to that of the CoFe₂O₄ film. Such enhancement of magnetization can be explained in terms of a breaking of ferrimagnetic order induced by the Co²⁺ migration.     

Magnetic properties of electron-doped Y1−xCexMnO3 compounds

Cerium-doped Y_1−xCe_xMnO₃ compounds have been prepared in single-phase form for x=0 to 0.10. X-ray diffraction (XRD) patterns could be analyzed by using P6₃cm space group. Temperature variations of ac susceptibility and magnetization measurements show that these Ce-doped materials exhibit weak ferromagnetic transition. The observed ferromagnetic transition is attributed to the double exchange ferromagnetic interaction between Mn²⁺ and Mn³⁺ ions due to electron doping. The M–H loops exhibit hysteresis along with linear contribution and were analyzed based on bound magnetic polaron (BMP) model. Increase in saturation magnetization and decrease in BMP concentrations have been observed with increase in Ce doping.     

Magnetic properties of (Gd1−xCex)Al2 compounds

Measurements of magnetization and magnetic susceptibility have been made on both polycrystal and single crystal (Gd_1?xCe_x)Al₂ ternaries. The Ce moment is smaller than the expected value for free Ce³⁺ and couples antiparallel with the Gd moment, Ferromaagnetism remains up to x=0.95, and T_c decreases with x. The Curie constant is in good agreement with the value that each atom is in free 3+ ion. The magnetocrystalline anisotropy constant K₁ is so small and of the order of 10^-17 erg/f.u. Results were analyzed in terms of the molecular field approximation including the cubic crystalline field.     

Effect of Co layer thickness on the magnetic properties of Tb30Co70/SiNx/Co thin films

The SiN_x (20 nm)/Tb₃₀Co₇₀ (90 nm)/SiN_x (5 nm)/Co (3–37 nm)/SiN_x (10 nm)/Si multilayer films are deposited on naturally oxidized Si wafer by magnetron sputtering. The saturation magnetization (M_s) of the multilayer films is increased with the thickness of high M_s ferromagnetic Co layer. The perpendicular coercivity (_Hc⊥$H_{{\mathrm{c}}^{\perp }}$) value is increased with Co layer thickness as the thickness of the Co layer is lower than 15 nm and then decreases drastically when the thickness of the Co layer further increased. The increase of the _Hc⊥$H_{{\mathrm{c}}^{\perp }}$ value is owing to the interlayer exchange effect [Li Zhang, Physica B 390 (2007) 373] between TbCo and Co layers. Co under-layer with in-plane magnetic anisotropy would pin the magnetic moment of the TbCo layer near by the Co layer and cause the value of _Hc⊥$H_{{\mathrm{c}}^{\perp }}$ to increase. However, as the Co layer is thicker than a critical thickness, the _Hc⊥$H_{{\mathrm{c}}^{\perp }}$ value of the multilayer film would decrease. Therefore, the Co layer with in-plane magnetic anisotropy and soft magnetic properties is expected to dominate the magnetic properties of the multilayer films.