Positive exchange bias in a Ni80Fe20/NixFe1−xO thin-film bilayer |
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| Authors: | K-W Lin Y-M Tzeng Z-Y Guo C-Y Liu J van Lierop |
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| Institution: | 1. Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan;2. Department of Physics and Astronomy, University of Manitoba, Winnipeg, MB, Canada |
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| Abstract: | We have measured positive exchange bias in a Ni80Fe20/NixFe1−xO thin-film nanocrystallite system. A series of solid solution NixFe1−xO 40 nm thick films capped with 25 nm thick Ni80Fe20 were deposited using a range of %O2/Ar bombardment energies (i.e. End-Hall voltages). Proper tuning of the deposition conditions results in a Ni80Fe20/NixFe1−xO (30%O2/Ar) based bilayer that exhibits a positive exchange bias loop shift of Hex∼60 Oe at 150 K. |
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| Keywords: | 75 30 Et 75 70 Cn 75 75 +a |
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