Al-Zn-Mg-Cu合金时效过程的小角度x射线散射研究

通过同步辐射小角度x射线散射方法（SAXS），研究了三种Al_Zn_ Mg_Cu合金沉淀析出过程显微结构参数（析出相尺寸和体积分数），随时效温度和时效时间 的演化，同时分析了Zn含量对合金沉淀析出过程的影响.结果表明，三种合金（A，B，C） 在实验条件下析出相均属于纳米尺度，析出相的最大体积分数随Zn含量的增加而增加，最大体积分数分别为0.023—0.028，0.052—0.054和0.04.在一定时效温度下，体积分数随时效时间的变化规律，符合析出相的形核、核长大和粗化动力学过程.  关键词： 小角度x射线散射 Al_Zn_Mg_Cu合金 时效 析出相尺寸 析出相体积分数     

Al-Zn-Mg-Cu-Li合金时效过程微结构演化的小角x射线散射研究

应用小角x射线散射技术分析了Al-Zn-Mg-Cu-Li合金在130，150和160℃温度时效24 h析出粒子的微结构参数的变化情况. 粒子的半径随着时效温度的增高而增加，它的比内表面积和体积百分数随着时效温度的增高而减小. 对Porod曲线q³J(q)-q²的分析表明,析出粒子与基体之间有明显的界面. 关键词： 小角x射线散射 Al-Zn-Mg-Cu-Li合金 时效 析出粒子     

时效工艺对PtCo合金磁性能的影响

研究了时效温度对PtCo合金磁性能的影响.磁性能测量结果显示,随着时效温度的增加合金的剩磁逐渐减小,时效温度为690 ℃时,合金的矫顽力达到最大值.第一步时效处理后,合金的有序度S随时效温度的提高而增加,长程有序度的增加说明合金有序相的晶粒尺寸也在增加,这是合金矫顽力变化的根本原因.第二步时效处理后,PtCo合金的微观组织结构不发生改变,有序相的各向异性场增大,使合金的矫顽力增大. 关键词： 时效温度 PtCo合金 磁性能 有序度     

时效对Ni-14.5Cr-1.5Si(wt%)合金某些性能的影响

本文研究了Ni-14.5Cr-1.5Si(wt%)合金淬火后时效发生的无序向有序转变对合金电阻率、对铂热电势、比热的影响。结果表明:电阻率显著增加,热电势、比热增加很小。X射线衍射分析表明,这是由于Ni₂Si化合物型δ第二相的形成所致。 关键词：     

析出相在铝镁合金Portevin-Le Chatelier效应中的作用研究

本文研究了在相同退火热处理条件下,不同析出相含量的两种铝镁合金5456和5052在不同加载应变率下的P-LC效应. 结果表明析出相对两种材料的P-LC效应有明显影响,并且析出相含量的不同所产生的影响不同. 此外,析出相含量较少的5052合金的溶质原子的扩散方式是管扩散,而析出相含量较多的5456合金不再局限于管扩散的方式,而是更为复杂. 关键词： Portevin-Le Chatelier effect 动态应变时效 铝镁合金     

镁-锌时效合金中一维过渡相β'_2的晶体学研究

采用X射线衍射方法,显示出镁-5Wt％锌合金在165℃时效初期有两种过渡相β′_1和β′_2共存。对细杆状过渡相,β′_2的一维衍射现象进行了详细分析。这种过渡相具有六角点阵结构,其[0001]轴是杆的长轴,它的点阵常数及与母相间的取向关系经测定为:a_(β′_2)=13.2,c(β′_2)=5.25,[0001]_(β′_2)∥[0001]_M,<1010 >_(β′_2)∥<1010 >_M。文中还讨论了由β′_2沉淀于基体中产生点阵畸变的问题。     

时效Ag-7wt.%Cu合金的微观组织、电阻率和硬度

采用差示扫描量热法、X射线衍射及透射电子显微镜研究了固溶和固溶一冷轧Ag-7wt.%Cu合金在时效过程中富Cu相的析出动力学和形貌特征,同时结合电阻率和显微硬度的测量,定量对比了固溶和固溶一冷轧Ag-7wt.%Cu合金时效过程中富Cu相对电阻率和硬度的影响及其机理.研究结果表明:固溶样品中富Cu相反应温度为300℃-350℃,析出激活能为(111±1.6)kJ/mol;而固溶一冷轧样品中由于形变能的存在,富Cu相温度降低为290℃-330℃,析出激活能升高为(128±12)kJ/mol.XRD结果证实富Cu相的析出过程与时效温度有关.固溶和固溶一冷轧合金在450℃时效后均能观察到球状的富Cu相,富Cu相的析出和溶解过程对电阻率和显微硬度有显著影响.当时效温度低于450℃时,随时效温度的提高,固溶一时效样品的电阻率降低,显微硬度增加:而固溶一冷轧一时效样品的电阻率和显微硬度均逐渐降低.显微硬度除了受富Cu相的影响外,还受到位错和形变孪晶的影响.当时效温度高于450℃时,两种样品的电阻率增大,而显微硬度降低.     

镁-锌时效合金中一维过渡相β′2的晶体学研究

采用X射线衍射方法,显示出镁-5Wt％锌合金在165℃时效初期有两种过渡相β′₁和β′₂共存。对细杆状过渡相,β′₂的一维衍射现象进行了详细分析。这种过渡相具有六角点阵结构,其[0001]轴是杆的长轴,它的点阵常数及与母相间的取向关系经测定为:a_(β′2)=13.2?,c_(β′2)=5.25?,[0001]_{(β′2)关键词：}     

Nb-Ti超导合金中ω相及其对临界电流密度的影响

用高压透射电镜对时效Nb-Ti合金的析出相类型和形态及其对临界电流密度的影响进行了研究.在Nb-65％Ti合金中,高温淬火后350℃时效观察到ω相的大量析出,其大小为100—300A,ω相的析出明显地提高合金的临界电流密度和硬度.在Nb-65％Ti和Nb-50％Ti合金中,450℃时效观察到存在二种析出相——ω相和α相.α相呈粗大针状,同时合金的J_c和H_r值显著降低.     

时效时间对FeNiAlTa形状记忆合金组织结构和性能的影响

本文以 Fe_59.5Ni₂₈Al_11.5Ta₁ 形状记忆合金为研究对象, 采用金相显微镜、X 射线衍射仪、扫描电镜、能谱仪和压力试验机等研究了轧制后不同时 效时间处理对该合金组织结构和性能的影响. 结果表明, 随着时效的进行, γ’ 相和 β’ 相的相继析出, 强化了奥氏体基体. 综合伪弹性曲线看出, 随着时效时间的增加, 600 ℃时效态合金的应力诱发马氏体临界应力先减小后增大, 合金的抗压强度、可恢复的应变和硬度都先增大后减小, 合金的残余应变则先减小后增大, 时效时间为 60 h 时, 合金的抗压强度最大, 到达1306 MPa, 此时合金的可恢复形变最大, 达到14.9%, 合金的硬度也最大, 合金的残余应变相对最小. 但随着时效时间的延长, 合金的最大应变逐渐减小, 合金塑性逐渐减小. Fe_59.5Ni₂₈Al_11.5Ta₁ 形状记忆合金的性能与沉淀相的颗粒大小、分布、体积分数等因素有关. 关键词： 59.5Ni₂₈Al_11.5Ta₁')" href="#">Fe_59.5Ni₂₈Al_11.5Ta₁ 时效处理 伪弹性 硬度     

MEMORY EFFECT AND CRYSTALLINE STRUCTURE IN POLYAMIDE 11

The memory effect in PA11 films is studied in close relation with the crystalline structure. In polyamide 11, [(CH₂)₁₀–CO–NH] _n , the polarity of the amide group induces hydrogen bonds between chains that are crucial to the crystalline structure and are responsible for the memory effect. During the forming from the melt, the polyamides are sheared, which leads to persistent chain alignments due to hydrogen bonds. In the present work, the crystalline structure of PA11 films has been studied by differential scanning calorimetry and wide angle x-ray scattering. The crystalline structure at room temperature depends on the cooling rate. A quench leads to the smectic δ′ structure, whereas a slow cooling favors the formation of the triclinic α phase in addition to the smectic δ′ phase. This study also shows the influence of an annealing in the melt on the crystalline structure. With increasing annealing time in the melt, the δ phase develops and the δ′ phase progressively vanishes. It seems necessary to maintain PA11 above the melting point for a long time to totally erase the structural evidence of the memory effect.     

Mechanisms of high-temperature creep of nickel-based superalloys under low applied stresses

[001] single-crystal specimens of the superalloys CMSX-4 and CMSX-10 were tested for creep at 1100°C under tensile stresses between 105 and 135?MPa, where they show pronounced steady creep. The deformed superalloys were analysed by density measurements, scanning electron microscopy and transmission electron microscopy which supplied information about porosity growth, evolution of the γ–γ′ microstructure, dislocation mobility and reactions during creep deformation. It is shown that, under the testing conditions used, steady creep strain mostly results from transverse glide–climb of (a/2) ?011? interfacial dislocations. A by-product of the interfacial glide–climb are vacancies which diffuse along the interfaces to growing pores or to a ?100? edge dislocations climbing in the γ′ phase. Climb of a ?100? dislocations in the γ′ phase is a recovery mechanism which reduces the constraining of the γ phase by the γ′ phase, thus enabling further glide of (a/2) ?011? dislocations in the matrix. Moreover the γ′ dislocations act as vacancy sinks facilitating interfacial glide–climb. The creep rate increases when the γ–γ′ microstructure becomes topologically inverted; connection of the γ′ rafts results in extensive transverse climb and an increase of the number of a?100? dislocation segments in the γ′ phase.     

Origin of cathodic degradation and new phase formation at the La0.9Sr0.1MnO3/YSZ interface

New phase formation at the La_0.9Sr_0.1MnO₃/YSZ interface and its effects on the cathodic performances were studied at 900 °C in air. The resistance caused by the interfacial product layer kept increasing with time to reach up to 40% of the total resistance after 500 h. The interfacial product was identified as La₂Zr₂O₇ by XRD measurement. The electrical conductivity of La₂Zr₂O₇ (2.4 × 10⁻⁵ S cm⁻¹ at 1000 °C), measured by AC impedance and current interruption methods, was 4 to 7 orders of magnitude smaller than those of La_0.9Sr_0.1MnO₃ electrode or YSZ electrolyte. Either the electronic conductivity or the electrochemical O₂ reduction activity of La₂Zr₂O₇ was negligible. Combining these results, a conclusion was made that the cathodic degradation comes mainly from the growth of interfacial product layer and its contribution to the cell resistance increment is ohmic in nature.     

Effect of the degree of crosslinking on the interfacial layer structure of poly(vinyl chloride) dispersed with crosslinked poly(n-butyl methacrylate) particles

The interfacial layer structure of a model incompatible polymer blend system was analyzed using ¹H pulse nuclear magnetic resonance (pulse NMR) spectroscopy. Non-crosslinked and crosslinked poly(n-butyl methacrylate) particles with a mean size of ca. 0.9 μm were prepared by seeded emulsion polymerization, and the degree of crosslinking was varied. The particles were powdered using a freeze-dry method and dispersed in poly(vinyl chloride) by melt blending. Dynamic mechanical analysis indicated that the non-crosslinked particles were completely compatible. In contrast, mutual diffusion of the polymer chains in the crosslinked particles was restricted within the particle/matrix interfacial layer. As a result, an incompatible phase structure in which the crosslinked particles were dispersed in the continuous phase was formed. Pulse NMR analysis indicated that the interfacial layer thickness was in the range of 17–98 nm. The thickness decreased with an increase in the degree of crosslinking in the particles. The interfacial layer thickness in the particles was approximately 10 times larger than that for the incompatible polymer pair. Tensile test results indicated that the elongation at break was dependent on the thickness of the interfacial layer. The yield stress was developed for the particles with high hardness that was independent of the interfacial thickness.     

Characterisation of the interface between GaAs: Cr substrates andn-type epitaxial GaAs layers by infrared multiple interference analysis

Infrared reflectivity measurements on vapour phase grownn-GaAs epitaxial layers (n=7×10¹⁶...5×10¹⁸ cm^–3) deposited on semi-insulating GaAs:Cr substrates show interference structures whose strength cannot be explained by the interference pattern of a simple two layer system. Assuming a third very thin (0.4 m) interfacial layer it is possible to describe the experimental results. For Te doping the carrier concentration in the interfacial film is higher than in the volume of the epitaxial layer; it is lower for Sn doping. The results of this nondestructive optical method were confirmed by conductivity measurements while etching the sample. The origin of the interfacial layer is discussed in terms of non-steady state conditions at the beginning of the epitaxial growth.     

“黑漆古”耐腐蚀机理探讨

“黑漆古”铜镜的表面由非金属层和过渡层组成,价电子结构分析指出,非金属层主要成分Sn_1-xCu_xO₂具有与SnO₂相近的稳定性,而实验数据分析发现,过渡层中,δ相铜锡合金与Sn_1-xCu_xO₂的相界上存在着重合位置点阵(CSL)结构,这种结构降低了相界面上铜原子的能量,使这部分δ相晶粒也十分稳定,从而使整个“黑漆古”表面具有耐腐蚀性能。 关键词：     

稳恒磁场对Fe-Fe50 wt.%Si扩散偶中间相生长的影响

本文考察了Fe-Fe50 wt.%Si扩散偶在1200℃ 无磁场以及稳恒磁场下扩散层生长规律. 利用真空浇注强制冷却技术制备Fe-Fe50 wt.%Si扩散偶, 将制备的扩散偶进行1200℃不同磁感应强度下的热处理. 对获得热处理后试样进行SEM与EDS线扫描分析, 结果表明, 无论无磁场还是稳恒磁场下Fe-Fe50 wt.%Si扩散偶均生成两个扩散层, 即FeSi相层和Fe-Si固溶体层, 并且发现0.8 T下的两个扩散层宽度均小于0 T磁场下试样. 按照抛物线规律, 计算了扩散偶中间扩散层的互扩散系数, 发现0.8 T磁场下FeSi相层和Fe-Si固溶体层的互扩散系数较无磁场下 分别降低了26.7%与34.1%. 通过对磁吉布斯自由能的计算, 发现0.8 T磁场对扩散激活能Q的影响不足以影响扩散过程. 但扩散过程中原子振动频率ν会受到磁场的影响, 进而影响扩散常数D₀, 磁场对原子振动频率的影响可以用拉莫尔旋进理论进行解释. 关键词： Fe-Fe50wt.%Si扩散偶 稳恒磁场 FeSi相 Fe-Si固溶体     

多次散射辐射传输计算中的相函数处理

在实际大气中,分子和粒子不仅遭受单次散射,还遭受多次散射。本文首先计算了多次散射在总散射量中的贡献。结果表明当光学厚度大于0.1时,多次散射在总散射量中的贡献将超过10%,因此必须考虑多次散射的作用。在多次散射辐射传输计算时,一般需把散射相函数展开为勒让德(Legendre)函数的多项式。有些介质如云或气溶胶粒子,散射相函数前向非常尖锐。展开的Legendre多项式需数百项甚至上千项才能收敛,而计算时间与展开项数的3次方成正比。本文介绍了在辐射传输计算时对尖锐相函数的δ-M和δ-fit处理方法,比较了两种方法的计算结果。当计算用的流数相同时,δ-fit方法的计算结果比δ-M方法的计算结果要精确得多;当计算结果精确度相同时,δ-fit方法的流数比δ-M方法的流数少得多,运算速度也快很多。δ-fit方法是目前处理散射相函数的理想方法,可以大大提高计算的精度以及缩减运算时间。     

Molecular dynamics simulation of the structural evolution of misfit dislocation networks at γ/γ′ phase interfaces in Ni-based superalloys

The structural evolution of misfit dislocation networks at γ/γ′ phase interfaces in Ni-based single crystal superalloys under tensile loading and temperatures is simulated by molecular dynamics. From the simulation, we find that, with increasing load or temperature, the patterns of dislocation networks on the (100), (110) and (111) phase interfaces change from regular to irregular or disappear. Under the same load and temperature, the dislocation networks of the different phase interfaces show different degrees and patterns of damage. The density and stability of the dislocation networks decrease with increasing temperature. When the interfacial dislocation networks become more regular, the γ/γ′ interfaces become more stable. The simulated results are supported by related experimental findings. Moreover, based on MD simulations, the averaged stress–strain responses for different phase interfaces under loading are presented. The results indicate that the combined influences of temperature and load play an important role for the structure evolution of misfit dislocation networks at γ/γ′ phase interfaces of Ni-based superalloys.     

Quantitative evaluation of evaporation rate during spin-coating of polymer blend films: Control of film structure through defined-atmosphere solvent-casting

Thin films of polymer mixtures made by spin-coating can phase separate in two ways: by forming lateral domains, or by separating into distinct layers. The latter situation (self-stratification or vertical phase separation) could be advantageous in a number of practical applications, such as polymer optoelectronics. We demonstrate that, by controlling the evaporation rate during the spin-coating process, we can obtain either self-stratification or lateral phase separation in the same system, and we relate this to a previously hypothesised mechanism for phase separation during spin-coating in thin films, according to which a transient wetting layer breaks up due to a Marangoni-type instability driven by a concentration gradient of solvent within the drying film. Our results show that rapid evaporation leads to a laterally phase-separated structure, while reducing the evaporation rate suppresses the interfacial instability and leads to a self-stratified final film.