四方铁电体PbFe0.5Nb0.5O3精细结构的第一性原理研究

采用全电势线性缀加平面波法(FPLAPW),计算了PbFe0.5Nb0.5O3的总能量,从而确定了它的四方铁电稳态结构,即B位离子(Fe和Nb)在四方铁电相的平衡构型.计算结果表明,Fe相对于氧八面体沿[001]方向的位移为0.022nm,而Nb的偏心位移为0.0020nm,其中铁电非稳性主要归因于前者 关键词： 铁电体 密度泛函理论 平面波法     

层状钙钛矿结构铁电薄膜SrBi2Ta2O9的掺杂改性研究

研究了Nb掺杂对层状钙钛矿结构铁电薄膜SrBi₂Ta₂O₉(SBT)的改性，分析了其改性机理.利用光声光谱技术对不同含量Nb掺杂SBT薄膜的可见光吸收进行了分析.结果表明掺杂SBT薄膜在580nm处的吸收带随Nb含量的增加发生红移，这暗示掺杂SBT薄膜的能隙与Nb含量有关.对掺杂SBT薄膜的铁电性质研究表明，薄膜的剩余极化值依赖于薄膜中的Nb含量，这与薄膜存在相界有关. 关键词：     

(Pb0.97La0.02)(Zr0.65Sn0.35-xTi x)O3反铁电陶瓷的热膨胀性质

在-100—200℃温度范围内，测量了(Pb_0.97La_0.02)(Zr_{0.65< /sub>Sn0.35-xTix)O3(PZST，0.1≤x≤0.14)反铁电陶 瓷的热膨胀性质.实验结果表明，组分在0.1 ≤x≤0.12的试样室温下为反铁电(AFEt)四方相，热膨胀系数(α)在低温段发生 “弯曲” ，而变温x射线衍射谱(XRD)显示材料保持四方相结构；当Ti含量在0.125≤x≤0.14时，室温 下是铁电三方相(FER)，温度升高时FER→AFEt相变体 积收缩，AFEt→立方顺电(PE c)相变体积增大；变温XRD谱证明了材料相结构随温度的转变过程.用多元复杂 化合物存在 纳米线度组分非均匀的观点解释了热膨胀性质随Ti含量演化的物理机理，并得到了该系统的 温度-Ti(x)含量相图. 关键词： 热膨胀性质 铁电/反铁电相界 反铁电陶瓷 PZST}     

PbTiO3/PbZr0.3Ti0.7O3/PbTiO3夹心结构铁电薄膜子晶层的优化

用Sol-Gel法制备了Pb_(1+x)TiO₃/PbZr_03Ti_07O₃/Pb_(1+x)TiO₃(PT/PZT/PT)夹心结构及PZT铁电薄膜,为了获得高质量的PT/PZT/PT夹心结构铁电薄膜,使用不同过量Pb配比(x)的PbTiO₃ (PT)层进行制备,以获得优化的PT子晶层.X射线 关键词： PT/PZT/PT 夹心结构 子晶 铁电薄膜     

MO2,M2O5和MO3氧化物对锂硼酸盐玻璃离子导电性的影响

本工作测量了45Li₂O·50B₂O₃·5M_mO_n(M=Al,Ti,Zr,P,V,Nb,Ta,Cr,Mo,W)玻璃的总电导率和电子电导率,以Raman光谱研究了玻璃结构,依据作为锂离子定域体的阴离子团的性质讨论了MO₂,M₂O₃和MO₃氧化物对玻璃离子导电性的影响。 关键词：     

低密度Co-Ni-Al-Mo-Cr-Ti/Nb/Ta系列高温合金方形γ/γ′共格组织设计及其稳定性

利用团簇成分式方法设计系列低密度Co基高温合金[Al-(Co₈Ni₄)]((Al_0.5(Ti/Nb/Ta)_0.5Mo_0.5)(Mo_0.5Cr_0.5Co_0.5))(=Co_8.5Ni₄Al_1.5Mo_1.0Cr_0.5(Ti/Nb/Ta)_0.5),采用真空非自耗电弧炉制备合金铸锭,并对其在1300℃固溶15h,在900℃下进行长期时效处理,进而对时效态样品进行微观组织表征和力学性能测试.结果表明,当Ti/Nb/Ta,Ti/Nb和Ti/Ta以等物质的量比匹配时,3种合金的微观组织均表现为立方形γ’相均匀地分布在γ基体中,这取决于合金适中的γ/γ’点阵错配度(0.27%—0.34%).在900℃长期时效过程中,3种合金中的γ’相均具有较小的粗化速率,且合金的显微硬度随时效时间基本不发生变化(27...     

AsH(X3Σ－)及AsH2(X2B1)自由基的分子结构与解析势能函数

运用Gaussian 03程序包中的单双迭代三重激发耦合簇理论和相关一致五重基优化了AsH₂的基态结构,并在优化结构的基础上计算了它的离解能和振动频率. 结果表明：AsH₂基态的平衡构型具有C_2v对称性,键长R_As-H=01508 nm,键角∠HAsH=912231°,离解能D_e(HAs-H)=28795 eV,振动频率ν 关键词： 2')" href="#">AsH₂ Murrell-Sorbie函数 多体项展式理论 解析势能函数     

Ba0.5Sr0.5TiO3有序构型的第一性原理研究

采用第一性原理计算了Ba_0.5Sr_0.5TiO₃三种有序构型的晶格结构和对应的电子结构,晶格结构的详细分析结果表明BST{100}有序构型为四方相,Ti-O八面体中Ti原子和Ba-Sr平面上的O原子沿[100]方向分别偏心位移0.040 Å和0.065 Å,八面体畸变导致反平行自发极化出现,构型处于反铁电态. BST{110}构型也是四方相,并且(110)和(1 关键词： 钛酸锶钡 第一性原理 有序结构 铁电性     

La诱导(Pb(1-3x/2)Lax)(Zr0.5Sn0.3Ti0.2)O3反铁电介电弛豫研究

采用标准电子陶瓷工艺制备了(Pb_(1-3x/2)La_x)(Zr_0.5Sn_0.3Ti_0.2)O₃(PLZST,0.00≤x≤0.18)反铁电陶瓷,利用X射线衍射、不同频率下弱场介电温谱、强场下的极化强度-电场(P-E)测试研究了材料相结构和电学性能.实验结果发现,随La含量x增大,室温下材料由铁电三方相(关键词： 反铁电陶瓷 介电频率色散 相变弥散 介电弛豫     

水热法制备的Li4-3xEux(MoO4)2微晶及其发光性能

采用水热法制备了Li_4-3xEu_{x(MoO4)2系列红色荧光粉.通过X射线衍射(XRD)、扫描电镜(SEM )和荧光分析(FL)对产物的微结构、形貌和发光性能进行表征分析.XRD分析表明,制备的Li4-3xEux(MoO4)2微晶均为白钨矿四方结构.SEM结果显示:随着x的增大,Li4-3xEux(MoO4)2微晶的晶粒尺寸相应减小,在0.2~0.5 μm之间变化.荧光分析结果表明:源于Eu³⁺的⁵D0→⁷F2和⁵D0→⁷F1电荷转移的592 nm和614 nm的特征发射峰显现明显,后者的发射强度远远大于前者.随着x的增大,样品中Eu³⁺的两个特征发射峰的强度先增大后减小,在x=1.0时达到最大.}     

Ion channeling studies of KTaO3:Nb

Ion channeling measurements have been performed on KTaO₃:Nb (KTN) in order to check the position of Nb relative to the tantalum site. No evidence for “off-center” Nb was found in the limit of experimental accuracy. In addition, the carbon content of the samples was measured and large concentrations were found (?300 p.p.m. weight). Possible relationship between Nb location and carbon presence is discussed.     

An origin of infinite range dipole-dipole correlations in soft matrices with off-center impurities: K 1−x Li x Ta 1−y Nb y O 3 and other systems

A model of cooperative behaviour for K 1 m x Li x Ta 1 m y Nb y O 3 (KLTN) and for other disordered systems like ferroelectric relaxors is considered from the point of view of contribution of infinite-range dipole-dipole interactions. It is shown that a local piezoeffect for off-center impurities in crystals with rather high electrostriction is responsible as origin of a infinite-range electric dipole-dipole interaction via elastic fields as well as for a co-existence of ferroelectric and glass-like states with reentrant glass effect.     

Ta对C—15相V2Hf和V2(Zr0.5Hf0.5)系列声子性能的影响

本文用中子飞行时间方法对C-15相的超导材料V₂Hf,V₂Ta和V₂Hf_0.8Ta_0.2以及V₂Zr_0.5。Hf_0.5和V₂Zr_0.5Hf_0.33Ta_0.17的热中子非弹性散射谱作了测量,并计算出相对的广义声子态密度。结果与早先发表的Nb对C-15相V₂Zr和V₂(Hf_0.5Zr_0.5)系列声子性能的影响一致:声子频率随超导转变温度T_c增加而软化,随T_c减小而硬化。这表明,对于此类材料弹性软化在一定程度上对提高T_c起了作用。结果还进一步表明V₂Zr或V₂Hf与V₂(Zr_0.5Hf_0.5)之间有着质的差别,V₂Hf加Ta后,T_c增加,声子频率软化,而V₂(Zr_0.5Hf_0.5)加Ta后,T_c减小,声子频率则略有硬化。这与V₂Zr和V₂(Hf_0.5Zr_0.5)加Nb的结果是一致的。此结果可以用角动量分波表象的能带论方法分析电-声耦合相互作用得出的杂化理论来定性解释。 关键词：     

Enhanced ferroelectric property of (Pb0.95Ca0.05)(Nb0.02Zr0.80Ti0.20)O3 thin films prepared by RF magnetron sputtering

(Pb_0.95Ca_0.05)(Nb_0.02Zr_0.80Ti_0.20)O₃ [PCNZT] thin films were deposited on the Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by RF magnetron sputtering with and without a LaNiO₃ [LNO] buffer layer. Ca and Nb elements in PZT films enhance the ferroelectric property, LaNiO₃ buffer layer improves the crystal quality of the PCNZT thin films. PCNZT thin films possess better ferroelectric property than that of PZT films for Ca and Nb ion substitution, moreover, PCNZT thin films with a LNO buffer layer possess (1 0 0) orientation and good ferroelectric properties with high remnant polarization (P_r = 38.1 μC/cm²), and low coercive field (E_c = 65 kV/cm), which is also better than that of PCNZT thin films without a LNO buffer layer (P_r = 27.9 μC/cm², E_c = 74 kV/cm). The result shows that enhanced ferroelectric property of PZT films can be obtained by ion substitution and buffer layer.     

BiFeO3中各离子在铁电相变中作用本质的第一性原理研究

采用基于密度泛函理论的广义梯度近似方法和赝势平面波法,对多铁材料BiFeO₃的铁电反铁磁相和可能的高温顺电相的电子结构进行了第一性原理研究.计算验证了BiFeO₃基态为G型反铁磁有序,Fe离子的理论磁矩与实验值相符.铁电相变发生后,Bi-6s态和6p态发生了电荷转移,Bi-6s电子的作用更加明显.Born有效电荷的研究表明铁电畸变主要表现为Bi原子的位移,并且电极化强度计算值很好地符合薄膜实验结果.部分态密度的计算表明Bi-6p态的成键轨道与反键轨道间的能量劈裂 关键词： 第一性原理 铁电性 铁电畸变 反铁磁性     

Coexistence of the relaxor-like and ferroelectric behavior in K1-xLixTaO3

ABSTRACT

The results of low-temperature linear and nonlinear susceptibilities, polarization measurements and the dc electric field dependence of the dielectric properties of the lithium-doped potassium tantalate K_1-xLi_xTaO₃, x = 0.034 (KLT-3.4%Li) solid solution are presented. The coexistence of the relaxor-like and ferroelectric behavior and different mechanisms leading to either of them are discussed. The observed ferroelectric phase transition is of the first-order type with temperature hysteresis. This transition is due to the off-center motions of Ta ions in the octahedral environment of oxygen ions. Clusters of Li⁺ ions produce a relaxor-like behavior and random electric field. This field reduces the depolarization field and allows off-center motions of Ta ions and an appearance of spontaneous polarization.     

Low-temperature phase transformations in weakly doped quantum paraelectrics: novel features and quantum reentrant dipolar glass state in KTa0.982Nb0.018O3

An unusual sequence of phase transitions (PT) and reentrant dipole glass-like phase formation at low temperatures was found recently in KTaO₃ weakly doped with Li and Nb (K_0.9986Li_0.0014Ta_0.976Nb_0.024O₃) [Phys. Rev. B 63 (2001) 172]. We report on detailed low frequency (100 Hz-1 MHz) permittivity and Raman light scattering studies of similar composition, but without Li admixture, KTa_1−xNb_xO₃ with x=0.018 (KTN1.8). The aim of the study is to answer the question if the reentrant dipole glass-like phase exists in KTN1.8 and what is the microscopic origin of this phase. A detailed study of the sharp low-temperature PT observed at T_C∼27 K revealed properties inherent to the reentrant glass-type state at lower temperatures. The substitution of Nb for Ta influences the TO₁ soft lattice mode and leads to PT with the long-range ferroelectric ordering. A crossover to an order-disorder polar microregion dynamics with a non-standard ε′(T) behaviour and dipole glass-like formation were found below T_C (at ∼15 K), which is attributed to the randomness of the Nb distribution. A crossover to the long-range order was found under a dc bias field.