Assessment of strength properties of cemented paste backfill by ultrasonic pulse velocity test

Ultrasonic pulse velocity (UPV) test is one of the most popular non-destructive techniques used in the assessment of the mechanical properties of concrete or rock materials. In this study, the effects of binder type/dosage, water to cement ratio (w/c) and fines content (<20 μm) of the tailings on ultrasonic pulse velocity (UPV) of cemented paste backfill (CPB) samples were investigated and correlated with the corresponding unconfined compressive strength (UCS) data. A total of 96 CPB samples prepared at different mixture properties were subjected to the UPV and UCS tests at 7, 14, 28 and 56-days of curing periods. UPV and UCS of CPB samples of ordinary Portland cement (CEM I 42.5 R) and sulphate resistant cement (SRC 32.5) initially increased rapidly, but, slowed down after 14 days. However, UPV and UCS of CPB samples of the blast furnace slag cement (CEM III/A 42.5 N) steadily increased between 7 and 56 days. Increasing binder dosage or reducing w/c ratio and fines content (<20 μm) increased the UCS and UPV of CPB samples. UPV was found to be particularly sensitive to fines content. UCS data were correlated with the corresponding UPV data. A linear relation appeared to exist between the UCS and UPV of CPB samples. These findings have demonstrated that the UPV test can be reliably used for the estimation of the strength of CPB samples.     

Fabrication, magnetism and high frequency application of exchange-coupled Fe65Co35±2-SiO1.7±0.2 granular films

A series of (Fe₆₅Co_35±2)_x-(SiO_1.7±0.2)_1−x nano-granular films with various metal volume fractions (x) were fabricated by rf sputtering. In a wide range, excellent soft magnetic properties have been achieved. In the x range from 0.7 to 0.48, the films exhibit small coercivity H_c not exceeding 4 Oe and high electrical resistivity ρ up to 1.15 × 10⁴ μΩ cm. And a minimum H_c value of 1.65 Oe was obtained for the sample of x = 0.57 with ρ = 2.86 × 10³ μΩ cm. At a frequency lower than 2.0 GHz, the real part μ′ of complex permeability of this sample is more than 170 and the FMR frequency is as high as 2.6 GHz, implying a high cut-off frequency for high frequency applications. With decreasing Fe₆₅Co_35±2 volume fraction, the resistivity of films increases remarkably and the grain size decreases obviously. At the same time, the coercivity H_c decreases with grain size decreasing, which is consistent with the conclusion resulted from random anisotropy model quoted by Herzer. Study on Henkel plots shows that intergranular ferromagnetic exchange coupling exists among grains and is important for realizing soft magnetic properties.     

Influence of rare earth Ce on structural, electrical and magnetic properties of Sr based W-type hexagonal ferrites

A series of single phase W-type Sr_3−xCe_xFe₁₆O₂₇ (x=0, 0.02, 0.04, 0.06, 0.08, 0.10) hexagonal ferrites prepared by the Sol-Gel method was sintered at 1050 °C for 5 h. The X-ray diffraction analysis reveals that all the samples belong to the family of W-type hexagonal ferrites. The c/a ratio falls in the range of W-type hexagonal ferrites. The grain size was measured by SEM varies from 0.7684 to 0.4366 μm which shows that the Ce³⁺ substituted samples have smaller grain size than pure ferrite Sr₃Fe₁₆O₂₇ which results from the difference in ionic radii of Ce³⁺ (1.034 Å) and Sr²⁺ (1.12 Å). The room temperature resistivity of the present samples varies from 6.5×10⁸ to 272×10⁸ Ω-cm. The coercivity increases from 1370 to 1993 Oe which is consistent with the decrease in grain size. The coercivity values indicate that the present samples fall in the range of hard ferrites. The large value of H_c may be due to domain wall pinning at the grain boundaries.     

Deposition of quasi-crystal Al-doped ZnO thin films for photovoltaic device applications

Quasi-crystal aluminum-doped zinc oxide (AZO) films were prepared by in situ radio frequency (RF) magnetron sputtering (sputtering without annealing) on glass substrates. The influence of deposition parameters on the optoelectronic and structural properties of the in situ deposited quasi-crystal AZO films was investigated in order to compare resulting samples. X-ray diffraction (XRD) patterns show that the quasi-crystal AZO thin films have excellent crystallization improved with increase of the RF power and substrate temperature, with an extremely preferential c-axis orientation exhibit sharp and narrow XRD pattern similar to that of single-crystal. Field emission scanning electron microscopy (FESEM) images show that quasi-crystal AZO thin films have uniform grains and the grain size increase with the increase of RF power and substrate temperature. Craters of irregular size with the columnar structure are observed in the quasi-crystal AZO thin films at a lower substrate temperature while many spherical shaped grains appeared at a higher substrate temperature. The average optical transmittance of all the quasi-crystal AZO films was over 85% in the 400-800 nm wavelength range. The resistivity of 4.176 × 10⁻⁴ Ω cm with the grain size of 76.4891 nm was obtained in the quasi-crystal AZO thin film deposited at 300 °C, under sputtering power of 140 W.     

Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering

Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10⁻⁴ Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV.     

Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method

Deep level transient spectroscopy (DLTS) is employed to study deep level defects in n-6H-SiC (silicon carbide) epilayers grown by the sublimation method. To study the deep level defects in n-6H-SiC, we used as-grown, nitrogen doped and nitrogen-boron co-doped samples represented as ELS-1, ELS-11 and ELS-131 having net (N_D–N_A) ∼2.0×10¹² cm⁻³, 2×10¹⁶ cm⁻³ and 9×10¹⁵ cm³, respectively. The DLTS measurements performed on ELS-1 and ELS-11 samples revealed three electron trap defects (A, B and C) having activation energies E_c – 0.39 eV, E_c – 0.67 eV and E_c – 0.91 eV, respectively. While DLTS spectra due to sample ELS-131 displayed only A level. This observation indicates that levels B and C in ELS-131 are compensated by boron and/or nitrogen–boron complex. A comparison with the published data revealed A, B and C to be E₁/E₂, Z₁/Z₂ and R levels, respectively.     

Thickness dependence of structural, electrical and optical behaviour of undoped ZnO thin films

Undoped ZnO thin films of different thicknesses were prepared by r.f. sputtering in order to study the thickness effect upon their structural, morphological, electrical and optical properties. The results suggest that the film thickness seems to have no clear effect upon the orientation of the grains growth. Indeed, the analysis with X-ray diffraction show that the grains were always oriented according to the c(0 0 2)-axis perpendicular to substrate surface whatever the thickness is. However, the grain size was influenced enough by this parameter. An increase in the grain size versus the thickness was noted. For the electrical properties, measurements revealed behaviour very dependent upon thickness. The resistivity decreased from 25 to 1.5×10⁻³ Ω cm and the mobility increased from 2 to 37 cm² V⁻¹ s⁻¹ when the thickness increased from 70 to 1800 nm while the carrier concentration seems to be less affected by the film thickness and varied slightly remaining around 10²⁰ cm⁻³. Nevertheless, a tendency to a decrease was noticed. This behaviour in electrical properties was explained by the crystallinity and the grain size evolution. The optical measurements showed that all the samples have a strong transmission higher than 80% in the visible range. A slight shift of the absorption edge towards the large wavelengths was observed as the thickness increased. This result shows that the band gap is slightly decreases from 3.37 to 3.32 eV with the film thickness vary from 0.32 to 0.88 μm.     

Structure and properties of transparent conductive doped ZnO films by pulsed laser deposition

High quality transparent conductive ZnO thin films were deposited on quartz glass substrates using pulsed laser deposition (PLD). We varied the growth conditions such as the substrate temperature and oxygen pressure. X-ray diffraction (XRD), X-ray photoelectron spectrometer (XPS), and atomic force microscopy (AFM) measurements were done on the samples. All films show n-type conduction, the best transparent conductive oxide (TCO) performance (Al-doped ZnO = 1.33 × 10⁻⁴ Ω cm, Ga-doped ZnO = 8.12 × 10⁻⁵ Ω cm) was obtained on the ZnO film prepared at pO₂ = 5 mTorr and T_s = 300 °C.     

Electron surface states in short-period superlattices: (GaAs)2/(AlAs)2(1 0 0)-c(4 × 4)

The electronic structure of (GaAs)₂/(AlAs)₂(1 0 0)-c(4 × 4) superlattice surfaces was studied by means of angular-resolved photoelectron spectroscopy (ARUPS) in the photon energy range 20-38 eV. Four samples with different surface termination layers were grown and As-capped by molecular beam epitaxy (MBE). ARUPS measurements were performed on decapped samples with perfect c(4 × 4) reconstructed surfaces. An intensive surface state was, for the first time, observed below the top of the valence band. This surface state was found to shift with superlattices’ different surface termination in agreement with theoretical predictions.     

D2 layers on MgO(0 0 1): Simulation study

In response to recent helium atom scattering (HAS) and neutron scattering results, Monte Carlo simulations and perturbation theory calculations have been performed for D₂ on MgO(0 0 1). Monte Carlo simulations predict that D₂ molecules form a series of interesting structures, p(2 × 2) → p(4 × 2) → p(6 × 2), with coverages Θ = 0.5, 0.75, 0.83 respectively, and followed by a formation of a top layer of p(6 × 2) unit cell symmetry. The three types of mono-layers are stable up to 13 K, whereas the top layer still exists up to 10 K. This is in partial agreement with the neutron scattering and HAS results that report c(2 × 2), c(4 × 2) and c(6 × 2); they agree in terms of coverage and stability, but disagree in terms of symmetry. A quantum mechanical examination of the D₂ molecules’ rotational motion shows the molecular axes are azimuthally delocalized and hence the simulated structures are c-type rather than p-type. These calculations also indicate that ortho-D₂ and helicoptering para-D₂ prefer cationic sites, while cartwheeling para-D₂ prefers anionic sites.