Spatial structures based on color centers created by electrons in lithium fluoride crystals: Absorption and luminescence characteristics

We have shown that in spatial structures based on color centers created by electrons in a lithium fluoride crystal, the distances between centers reach 1.6 nm and 3.6 nm for F₁ and F₂ centers respectively. This suggests considerable potential opportunities for using electron technology to form structures in the crystals with spatial resolution of such an order of magnitude. We measured the decrease in fluorine content on the irradiated surface of the crystal. We found the concentrations of F₁, F₂, F₃⁺, F₃(R₂), and F₄(N₁) centers. We established that the specific characteristics of color center formation by electrons leads to an increase in the efficiency of creation of F₃ and F₄ centers. We determined the decrease in the average luminescence lifetimes of F₂ and F₃⁺ centers as a result of concentration quenching. We observed distortion of the luminescence contour for F₂ centers as a result of absorption of its short-wavelength portion by other centers and emission of radiation by the latter in its long-wavelength portion. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 1, pp. 102–110, January–February, 2008.     

Characteristic features of thermoluminescence kinetics in dosimetric aluminum oxide crystals

We have studied the thermoluminescence curves in the 420 nm band (F centers) and the 330 nm band (F⁺ centers) within the temperature range of the dosimetric peak (T_max = 450 K) in anion-deficient aluminum oxide crystals. Assuming general-order kinetics, we have analyzed the thermoluminescence decay curves on the rising and falling sides of the dosimetric peak, in samples with different degrees of deep trap filling. We have established differences in the order of the kinetics within different temperature ranges of the dosimetric peak. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 2, pp. 187–190, March–April, 2006.     

Luminescence excitation spectra and characteristics of luminescence centers with overlapping absorption bands

For an ensemble of different types of luminescence centers with overlapping absorption bands, with no restrictions on the optical densities, we have obtained relations describing the luminescence excitation spectra for each type of center. We consider transformations of the relations in some limiting cases. We suggest a procedure for using the equations obtained to determine the characteristics of the luminescence centers. Some of these procedures have been experimentally implemented in study of intrinsic radiation color centers in lithium fluoride crystals. We have determined the ratios of the luminescence quantum yields for F₂ and F₃⁺ color centers, and we have observed that a major role is played by nonradiative transitions in deactivation of the first excited singlet state of F₃⁺ centers. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 3, pp. 365–371, May–June, 2008.     

Spectral and kinetic characteristics of CdI<Subscript>2</Subscript> and CdI<Subscript>2</Subscript>:Pb scintillators

We have studied the effect of lead dopant on the optical absorption, photoluminescence, and x-ray luminescence spectra, and the scintillation characteristics of CdI₂ at room temperature. The crystals for the study were grown by the Stockbarger-Bridgman method. Activation of CdI₂ from the melt by the compound PbI₂ leads to the appearance in the absorption spectra in the near-edge region of an activator band at 395–405 nm, which is interpreted as an A band connected with electronic transitions from the ¹S₀ state to the ³P₁ levels in the Pb²⁺ ion. For x-ray excitation, CdI₂:Pb²⁺ crystals with optimal dopant concentration (∼1.0 mol%) are characterized by a light yield with maximum in the 570–580 nm region that is an order of magnitude higher than for CdI₂ crystals in the 490–500 nm band. For α excitation, the radioluminescence kinetics for cadmium iodide is characterized by a very short (∼0.3 nsec) rise time and fast decay of luminescence, with τ₁ ≈ 4 nsec and τ₂ = 10–76 nsec. Depending on the conditions under which the crystals were obtained, the fast component fraction is 95%–99%. The crystal is characterized by a similar scintillation pulse in the case of excitation by x-ray pulses. The radioluminescence pulse shape for CdI₂:Pb in the decay stage is predominantly exponential, with luminescence decay time constants τ₁ ≈ 10 nsec and τ₂ = 200–250 nsec. This system is characterized by low afterglow, at the level for the Bi₄G₃O₁₂ scintillator. We have demonstrated the feasibility of using CdI₂:Pb as a scintillator for detecting α particles. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 6, pp. 825–830, November–December, 2008.     

CaWO4晶体中F型色心电子结构的研究

运用相对论的密度泛函离散变分法(DV-Xα)研究了CaWO₄晶体中F型色心的电子结构. 计算结果表明，F和F⁺心在禁带中引入了新的施主能级；分析了晶体内可能存在的光学跃迁模式，并通过过渡态的方法计算了F，F⁺心跃迁到导带底的能量分别为1.92eV和2.42eV. 因此，从理论上推断了F和F⁺心在CaWO₄晶体中可能引起650nm和515nm的吸收，由此说明CaWO₄晶体中650nm和515nm吸收带起源于晶体中的F和F⁺心. 关键词： 4晶体')" href="#">CaWO₄晶体 +心')" href="#">F和F⁺心 DV-Xα     

Aggregate color center formation processes in lithium fluoride crystals after irradiation

Lithium fluoride crystals were irradiated by different doses of gamma photons at a temperature of 77 K. We measured the aggregation kinetics for the color centers with different annealing temperatures above the temperature of anion vacancy mobility. We show that the lifetimes of the vacancies decrease while the lifetimes of the F₂⁺ F_2^{+} centers increase as the irradiation dose increases. We explain these types of dependences based on the aggregation processes for color centers in the post-radiation period. We determine the time constants and energies (analogous to activation energies in the Arrhenius equation) for the various processes involving rise and fall in the concentration of aggregate color centers. Based on the experimental data obtained, we have established the processes forming F ₂ and F₃⁺ F_3^{+} centers in the post-radiation period. The F ₂ centers are formed when vacancies ν_a add to F₁^- F_1^{-} centers. Vacancies arising during irradiation of the crystal participate in their creation in the first fast stage. In the long final stage, vacancies are used which appear in the post-radiation period on occurrence of the reaction F₂⁺ F_2^{+} + H → ν_a + fluoride ion at the lattice site, where H is an interstitial fluorine atom. The F₃⁺ F_3^{+} centers are formed both by merging F₂⁺ F_2^{+} and F ₁ centers and as a result of addition of vacancies to F ₂ centers. In this case, vacancies are used that are generated not only during irradiation of the crystal but also in the post-radiation period. The rise in the concentration of F₃⁺ F_3^{+} centers occurs faster than the rise in the concentration of F ₂ centers.     

Luminescence of aggregate centers in CsBr:Eu2+ single crystals

We have used the Bridgman method to grow CsBr:Eu²⁺ single crystals, adding an activator to the mix in the form of Eu₂O₃ in amounts of 0.0125, 0.0250, and 0.0500 mole %. At T = 300 K, we studied the absorption spectra, the photoluminescence (PL) spectra, and the photostimulated luminescence (PSL) spectra of the grown crystals. We have established that the structure of the photoluminescence and photostimulated luminescence centers in crystals grown from the CsBr:Eu₂O₃ mix includes isolated dipole centers Eu²⁺-V_Cs, emitting in bands with maxima at 432 nm and 455 nm respectively, and in crystals grown at activator concentrations of 0.025 and 0.050 mole % they also include aggregate centers (AC) based on CsEuBr₃ nanocrystals with emission bands at 515 m and 523 nm. We have shown that the maximum concentration of aggregate centers of the CsEuBr₃ nanocrystal type in CsBr:Eu²⁺ crystals is achieved for an activator content in the mix within the range 0.01–0.05 mole %. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 3, pp. 359–362, May–June, 2006.     

Transversely pumped laser using F 3 + and F2 mixed color centers in a LiF crystal at room temperature

A stable laser with F₃⁺ and F₂ mixed color centers in LiF crystal is constructed using a transversely pumped cavity at room temperature. The mixed color center laser is pumped with a nitrogen-laser-pumped dye laser. A pulse output of the laser is 0.23 mJ. The pulse widths of the F₃⁺ and F₂ color center lasers are about 12 and 8.5 ns, respectively. The optical–optical conversion efficiency is about 5.0%. The divergence of the F₃⁺ color center laser beam is about 2.2 mrad and that of the F₂ color center laser beam about 3.5 mrad. The polarization of the mixed color center laser is about 0.97. The output of the F₃⁺ color center laser extends from 515 to 575 nm and peaks at 540 nm, while that of the F₂ color center laser extends from 633 to 705 nm and peaks at 667 nm.     

Luminescence of CsBr:Eu films grown by liquid-phase epitaxy

By liquid-phase epitaxy from an aqueous alcoholic solution, we have obtained films of the well-known storage phospor CsBr:Eu, and we have studied their cathodoluminescence and photoluminescence (PL) spectra compared with the undoped CsBr films. We have established that the structure of the photoluminescence centers of the CsBr:Eu films when excited by laser radiation in the absorption band of the Eu²⁺ ions (λ = 337 nm) includes Eu²⁺-V_Cs isolated dipole centers and CsEuBr₃ aggregate centers, and also luminescence centers based on inclusions of hydroxyl group OH⁻ with the corresponding emission bands in the 440 nm, 520 nm, and 600 nm regions. We have studied the dependence of the spectra and the intensity of the photoluminescence for CsBr:Eu films on annealing temperature in air at 423–483 K, compared with analogous dependences for CsBr:Eu single crystals obtained from the melt. We have shown that annealing the films at T = 423–463 K leads to rapid formation of CsEuBr3 aggregate luminescence centers, while for T > 473 K thermal degradation of these centers occurs. We conclude that the observed differences between the photoluminescence spectra of CsBr:Eu films and CsBr:Eu single crystals may be due to additional doping of the films with OH⁻ ions. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 2, pp. 191–194, March–April, 2006.     

The absorption spectrum of radiation-colored SrCl2-Ce crystals

We investigate the spectra of the x-ray radiation-induced absorption of SrCl₂−Ce crystals over the spectral range 345–830 nm and their temperature transformations in the interval from 77 to 450 K. We found that radiative color centers are characterized by a complex spectrum of induced absorption that contains wide bands of photochromic PC (750, 519, 378 nm) and PC⁺ (620, 446, 340 nm) centers and quasi-linear bands of Ce²⁺ centers. The most significant thermal transformations of radiative color centers occur in the vicinity of the thermostimulated luminescence peak of 394 K, at which the holes of the PC⁺ centers recombine with the electrons of the Ce²⁺ centers. Ivan Franko L’vov State University, 8, Kirilla i Mefodiya St., L’vov 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 4, pp. 545–547, July–August, 1997.     

Tunable optical parametric oscillator based on a KTP crystal,pumped by a pulsed Ti<Superscript>3+</Superscript>:Al<Subscript>2</Subscript>O<Subscript>3</Subscript> laser

We present the characteristics of an optical parametric oscillator based on a KTP crystal, pumped with noncritical phase matching by a pulsed Ti³⁺:Al₂O₃ laser, tunable in the range 677–970 nm. Tunable generation of signal and idler waves is obtained in the ranges 1030–1390 nm and 2690–3050 nm respectively. The efficiency of conversion of the pump to the signal wave is ≈23%, which for pulses of duration ≈8 nsec ensures an energy in the range 1.0–11.5 mJ. The width of the emission spectrum for the signal wave is within the range 0.8–1.8 nm and is predominantly determined by the linewidth of the Ti³⁺:Al₂O₃ pump laser. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 3, pp. 351–356, May–June, 2007.     

Effect of isoelectronic impurities K<Superscript>+</Superscript> and I<Superscript>−</Superscript> on luminescence of CsBr:Eu<Superscript>2+</Superscript> crystals

We have investigated the photoluminescence (PL) and photostimulated luminescence (PSL) spectra at 300 K to study the effect of isoelectronic impurities K⁺ and I⁻ on the formation and energy structure of Eu²⁺-V_Cs isolated dipole centers and aggregate centers in the form of single crystals of CsEuBr₃ in CsBr:Eu²⁺ single crystals. We have shown that K⁺ and I⁻ impurities in a concentration of 5 mol% do not have a substantial effect on the energy spectrum of isolated dipole centers in CsBr:Eu²⁺ single crystals and the processes for the formation of such centers during growth of CsBr:Eu single crystals from the melt by the Bridgman method. We have established that in Cs_0.95K^0.05Br:Eu²⁺, more favorable conditions are realized for the formation of aggregate centers than in CsBr:Eu²⁺ and CsBr^0.95K^0.05Br:Eu²⁺ single crystals. So in order to improve the storage properties of phosphors based on CsBr:Eu²⁺, in particular for increasing the efficiency of PSL excitation, it is expedient to dope them with K⁺ impurity in a concentration up to 5 mol%. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 5, pp. 627–630, September–October, 2007.     

Thermally and photostimulated recombination processes in PbWO4 crystals at low temperatures

We have studied thermally and photostimulated recombination processes in PbWO₄ crystals in the temperature interval 90–295 K. We have shown that after x-ray excitation of the crystal at 90 K, the thermally stimulated luminescence curve shows a relatively intense peak at 110 K and weak peaks at about 173, 191, and 232 K. Exposure of the PbWO₄ crystal to IR radiation after excitation by x-ray photons leads to the appearance of photostimulated flash luminescence, a significant decrease in the intensity of the 110 K peak, and a shift of that peak to the 116 K region. But long-wavelength illumination has less of an effect on the intensity and position of the higher temperature peaks. It is assumed that F⁻ centers are formed in the PbWO₄ crystal at 90 K during x-ray exposure. The thermal light sum released by IR illumination in the temperature region 90–150 K has a maximum at ≈108 K. The nature of this maximum is connected with the complex centers [Pb³⁺ + (WO_3-F⁻)]. Optical and thermal degradation of these centers leads to the appearance of emission in the green region of the localized exciton spectrum.     

Photostimulated transformations of radiation color centers of SrCl2−Ce crystals

Spectra of x-ray radiation-induced absorption of SrCl₂−Ce crystals in the region of 340–830 nm under the effect of selective irradiation in the induced-absorption bands by both conventional and laser sources are investigated. It is established that irradiation of sufficient intensity causes irreversible photochemical transformations of PC, PC⁺, and Ce²⁺ color centers their destruction, and restoration of the transparency of the crystals. To whom correspondence should be addressed. I. Franko Lvov State University, 8, Kirill and Mefodii Str., Lvov, 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 5, pp. 666–668, September–October, 1999.     

Five Simultaneously Q-Switch Mode-Locked Passive Laser Modulators

Five types of passive Q-switched as well as simultaneously Q-switch mode-locked modulators: plastic dye sheets (Kodak 9850 cellulose acetate dye sheets), lithium fluoride crystals containing F₂ ⁻ color centers (LiF:F₂ ⁻), chromium-doped yttrium–aluminum–garnet crystals (Cr⁴⁺:YAG), ionic color filter glass (Schott RG1000 color filter glass), and the single crystal semiconductor wafers (GaAs, Fe-doped InP, Zn-doped InP, S-doped InP, etc.) used for modulation of the Nd:hosted(Nd:YAG, Nd:YVO₄, and Nd:LSB) lasers were investigated in detail in our research. We also investigated applications of the Q-switch mode-locked pulse train for the development of a higher resolution solid-state laser range finder.     

Recombination processes in europium-doped cadmium iodide crystals

Results of comprehensive research into optical and luminescent-kinetic characteristics of europium-doped cadmium iodide crystals excited by nitrogen laser radiation, α-particles, and x-rays are presented. Crystals under study have been grown by the Bridgman–Stockbarger method. The doping EuCl₃ admixture was introduced into the charge in quantities of about 0.05 and 1.0 mol%. Impurity absorption detected in the near-edge region of the crystals is interpreted as part of the Eu²⁺ ion long-wavelength band associated with f–d-transitions. The cation impurity and matrix defects in CdI₂:Eu²⁺ crystals create complex centers responsible for emission with a maximum in the 580–600-nm region. The short component in the luminescence decay kinetics of weakly-doped crystal excited by α-particles and x-ray photons is due to the exciton emission characteristic of CdI₂. The slow component in the scintillation pulse results from recombination of charge carriers followed by creation of exciton-like states on the defect-impurity centers. Laser or x-ray excitation induces light-sum accumulation on the trapping levels at a depth of 0.2–0.6 eV that is mainly related to matrix microdefects. Trapping centers associated with the chlorine impurity are observed in the heavily-doped crystal. Photostimulated luminescence at 85 K arising at the electron stage of the recombination process is caused by recombination of electrons released from F-type centers with holes localized near the activator. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 3, pp. 358–364, May–June, 2009.     

Luminescence of short-lived color centers induced in LiF crystals by a pulsed microwave discharge

A new phenomenon — intense luminescence of noncolored lithium fluoride (LiF) crystals excited by an electrodeless pulsed microwave discharge at the prebreakdown stage of development — is observed. This luminescence consists of the luminescence of short-lived aggregate F₂ and F ₃ ⁺ color centers at room temperature. It is shown that the density of short-lived color centers induced in the surface layer of LiF crystals by a microsecond microwave discharge reaches values of ∼10¹⁹−10²⁰ cm⁻³. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 3, 163–167 (10 August 1997)     

Stress-Induced Alteration of Chlorophyll Fluorescence Polarization and Spectrum in Leaves of <Emphasis Type="Italic">Alocasia macrorrhiza</Emphasis> L. Schott

The value of intrinsic chlorophyll fluorescence polarization, and the intensity in emission spectrum were investigated in leaf segments of Alocasia macrorrhiza under several stress conditions including different temperatures (25–50°C), various concentrations of NaCl (0–250 mM), methyl viologen (MV, 0–25 μM), SDS (0–1.0%) and NaHSO₃ (0–80 μM). Fluorescence emission spectrum of leaves at wavelength regions of 500–800 nm was monitored by excitation at 436 nm. The value of fluorescence polarization (P value), as result of energy transfer and mutual orientation between chlorophyll molecules, was determined by excitation at 436 nm and emission at 685 nm. The results showed that elevated temperature and concentrations of salt (NaCl), photooxidant (MV), surfactant (SDS) and simulated SO₂ (NaHSO₃) treatments all induced a reduction of fluorescence polarization to various degrees. However, alteration of the fluorescence spectrum and emission intensity of F₆₈₅ and F₇₃₁ depended on the individual treatment. Increase in temperature and concentration of NaHSO₃ enhanced fluorescence intensity mainly at F₆₈₅, while an increase in MV concentration led to a decrease at both F₆₈₅ and F₇₃₁. On the contrary, NaCl and SDS did not cause remarkable change in fluorescence spectrum. Among different treatments, the negative correlation between polarization and fluorescence intensity was found with NaHSO₃ treatments only. We concluded that P value being measured with intrinsic chlorophyll fluorescence as probe in leaves is a susceptible indicator responding to changes in environmental conditions. The alteration of P value and fluorescence intensity might not always be shown a functional relation pattern. The possible reasons of differed response to various treatments were discussed.     

Photo- and Thermobleaching of Luminescence Centers in Synthetic Opals

It has been found that on exposure of specimens of synthetic opal to UV radiation, luminescence is excited in them (337 nm) that has spectral maxima at 400 and 500 nm. Its duration at half-height of a pulse is 9 nsec, and there is a weak slow component with τ ∼ 1 μsec. The spectrum and intensity of the luminescence depend on the duration of irradiation and temperature. The luminescence bands revealed relate to two individual luminescence centers, namely: the shortwave one, caused by the luminescence centers formed in the bulk of the opal, and the longwave one, due to those formed on the opal surface. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 5, pp. 622–626, September–October, 2005.     

Ab initio calculations of electronic structures of SrMoO4 crystals containing F and F color centers

The electronic structures of SrMoO₄ crystals containing F and F⁺ color centers with the lattice structure optimized are studied within the framework of the fully relativistic self-consistent Dirac–Slater theory, using a numerically discrete variational (DV-Xα) method. From the calculation, it is concluded that F and F⁺ color centers have donor energy level in the forbidden band. The electronic transition energies from the donor level to the bottom of the conduction band are 1.855 eV and 2.161 eV, respectively, which correspond to the 670 nm and 575 nm absorption bands. It is predicted that the 670 nm and 575 nm absorption bands originate from the F and F⁺ centers in SrMoO₄ crystals.