Effects of Anisotropy on Pair-wise Entanglement of a Four-Qubit Heisenberg XXZ Chain

The pair-wise thermal entanglement in a four-qubit Heisenberg XXZ chain ＆ investigated to study the role of anisotropy when an external magnetic field is included. It is found that pair-wise entanglement is absent between nearest- and next-nearest neighbouring qubits with anisotropic parameter △≤-1. For two nearest-neighbouring qubits, increasing the parameter can not only induce the entanglement, but also extend the entanglement region in terms of magnetic field B and temperature T. For two next-nearest-neighbouring qubits, increasing anisotropic parameter can shift the location of the entanglement and control the extent of the entanglement in terms of magnetic field at a finite temperature.     

Thermal Entanglement in the Spin-S Heisenberg XYZ Model

The thermal entanglement in the spin-S Heisenberg XYZ model is studied in detail by using the entanglement measure of negativity. The effects of spin on the thermal entanglement, the threshold temperature, the critical uniform external magnetic field, the nonuniform external magnetic field and the＇, entanglement extremum are discussed, respectively. It is shown that with increasing spin, the entanglement will increase, and then decrease slowly. In addition, we find that entanglement will approach a constant Nc with the increase of DM interaction, the constant increases with the increase of spin, and both the threshold temperature Tc and critical uniform external magnetic field Bc will increase with the increasing spin. Thus high-spin system can inhibit the influence of the external environment better.     

Entanglement in a two-qubit Heisenberg XXZ chain with different Dzyaloshinskii-Moriya couplings and an inhomogeneous magnetic field

Ground state entanglement and thermal entanglement of a two-qubit Heisenberg XXZ chain in the presence of the different Dzyaloshinski-Moriya interaction and inhomogeneous magnetic field are investigated.By the concept of concurrence,we find that the inhomogeneity of the magnetic field may make entanglement last for a long time and the critical temperature is dependent on Jz and b.The entanglement can be increased by increasing the temperature in some cases.We also find that the x-component parameter Dx has a higher critical temperature and more entanglement for a certain condition than the z-component parameter Dz.     

Continuous Variable Entanglement of Two Mesoscopic Josephson Junctions Induced by a Thermal Radiation Field

The continuous-variable （CV） entanglement between two mesoscopic Josephson junctions is studied and the time-dependent characteristic function in Wigner representation for the Josephson junction subsystem driven by a singlemode thermal field is analytically obtained. It is found that an initial lowest energy state of the junction subsystem can evolve into a two-mode entangled Gaussian state through the interaction with the thermal radiation field. Furthermore, we investigate the influence of the temperature on the entanglement of the junctions and find that the CV entanglement of the two junctions shows the critical behavior with respect to the temperature.     

Influence of Multi-Photon Process on Entanglement of Interacting System of the Qubit and Thermal Field

We study the system of a single qubit couples to a single mode thermal field according to a multi-photon Jaynes-Cummings-type interaction with phase decoherence. Both the time evolving entanglement and the stationary state entanglement are calculated by adopting the log-negativity as a measure. It is found that the multi-photonprocess can enhance the stationary state entanglement of this system and can enlarge the range of the parameter Δ/g and the mean photon number of initial thermal field in which the stationary state is distillable.     

Combined Effect of Dissipation and Thermal Mixed State on Entanglement in the Dispersive Limit

We investigate the entanglement in the interacting system of a single mode thermal field and a single qubit with dissipation in the dispersive limit. The influence of initial temperature of thermal field and atoms on the entanglement is then examined.     

Entanglement in a system of two two-level atoms interacting with a single-mode field

We investigate the entanglement in a system of two coupling atoms interacting with a single-mode field by means of quantum information entropy theory. The quantum entanglement between the two atoms and the coherent field is discussed by using the quantum reduced entropy, and the entanglement between the two coupling atoms is also investigated by using the quantum relative entropy. In addition, the influences of the atomic dipole--dipole interaction intensity and the average photon number of the coherent field on the degree of the entanglement is examined. The results show that the evolution of the degree of entanglement between the two atoms and the field is just opposite to that of the degree of entanglement between the two atoms. And the properties of the quantum entanglement in the system rely on the atomic dipole--dipole interaction and the average photon number of the coherent field.     

Atomic coherence control on the entanglement of two atoms in two-photon processes

Considering two identical two-level atoms interacting with a single-mode thermal field through two-photon processes, this paper studies the atomic coherence control on the entanglement between two two-level atoms, and finds that the entanglement is greatly enhanced due to the initial atomic coherence. The results show that the entanglement can be manipulated by changing the initial parameters of the system, such as the superposition coefficients and the relative phases of the initial atomic coherent state and the mean photon number of the cavity field.     

Concurrence of Quantum States： Algebraic Dynamical Method Study XXX Models in a Time-Depending Random External Field

Based on algebraic dynamics and the concept of the concurrence of the entanglement, we investigate the evolutive properties of the two-qubit entanglement that formed by Heisenberg XXX models under a time-depending external field. For this system, the property of the concurrence that is only dependent on the coupling constant J and total values of the external field is proved. Furthermore, we found that the thermal concurrence of the system under a static random external field is a function of the coupling constant J, temperature T, and the magnitude of external field.     

Coherence-enhanced entanglement between two atoms at high temperature

This paper studies the entanglement properties in a system of two dipole-dipole coupled two-level atoms resonantly interacting with a single-mode thermal field. The results show that, when the temperature of the cavity is high enough （corresponding to the large value of the mean photon number）, the entanglement is greatly enhanced due to the initial atomic coherence. These results are helpful for controlling the atomic entanglement by changing the initial parameters of the system.     

First-Principles Study on the Electronic Structures for Y^3＋：PbWO4 Crystals

The possible defect models of Y^3＋：PbWO4 crystals are discussed by defect chemistry and the most possible substituting positions of the impurity Y^3＋ ions are studied by using the general utility lattice program （GULP）. The calculated results indicate that in the lightly doped Y^3＋ ：PWO crystal, the main compensating mechanism is [2Ypb^＋ ＋ VPb^2-], and in the heavily doped Y^3＋ ：PWO crystal, it will bring interstitial oxygen ions to compensate the positive electricity caused by YPb^＋, forming defect clusters of [2Ypb^＋ ＋Oi^2-] in the crystal. The electronic structures of Y3＋ ：PWO with different defect models are calculated using the DV-Xα method. It can be concluded from the electronic structures that, for lightly doped cases, the energy gap of the crystal would be broadened and the 420nm absorption band will be restricted; for heavily doped cases, because of the existence of interstitial oxygen ions, it can bring a new absorption band and reduce the radiation hardness of the crystal.     

Micro-Photoluminescence Confocal Mapping of Single V-Grooved GaAs Quantum Wire

We perform the micro-photoluminescence measurement at low temperatures and a scanning optical mapping with high spatial resolution of a single V-grooved GaAs quantum wire modified by the selective ion-implantation and rapid thermally annealing. While the mapping shows the luminescences respectively from the quantum wires and from quantum well areas between quantum wires in general, the micro-photoluminescence at liquid He temperatures reveals a plenty of spectral structures of the PL band for a single quantum wire. The spectral structures are attributed to the inhomogeneity and non-uniformity of both the space structure and compositions of real wires as well as the defects nearby the interface between quantum wire and surrounding quantum well structures. All these make the excitons farther localized in quasi-zero-dimensional quantum potential boxes related to these non-uniformity and/or defects. The results also demonstrate the ability of micro-photoluminescence measurement and mapping for the characterization of both opto-electronic and structural properties of real quantum wires.     

Application of Electron-Shelving Detection via 423 nm Transition in Calcium-Beam Optical Frequency Standard

A new scheme of small compact optical frequency standard based on thermal calcium beam with application of 423 nm shelving detection and sharp-angle velocity selection detection is proposed. Combining these presented techniques, we conclude that a small compact optical frequency standard based on thermal calcium beam will outperform the commercial caesium-beam microwave dock, like the 5071 Cs clock （from Hp to Agilent, now Symmetricom company）, both in accuracy and stability.     

Instability of Solution of Phase Retrieval in Direct Diffraction Phase-Contrast Imaging with Partially Coherent X-Ray Source

The theoretical model of direct diffraction phase-contrast imaging with partially coherent x-ray source is expressed by an operator of multiple integral. It is presented that the integral operator is linear. The problem of its phase retrieval is described by solving an operator equation of multiple integral. It is demonstrated that the solution of the phase retrieval is unstable. The numerical simulation is performed and the result validates that the solution of the phase retrieval is unstable.     

Chemical Potential Dependence of Two-Quark Condensates

By adopting the background field method, the response of the dressed quark propagator to the presence of finite chemical potential is analysed up to the second order. From this, we obtain a model-independent formula for the chemical potential dependence （up to the second order） of the in-medium two-quark condensate and show by both Lorentz covariance arguments and explicit calculations that the O（μ） contribution to the in-medium two-quark condensate vanishes identically.     

Effects of in situ thermal annealing on the structural, optical, and electrical properties in Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers

Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg_0.7Cd_0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg_0.7Cd_0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg_0.7Cd_0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg_0.7Cd_0.3Te epilayer. Hall-effect measurements showed that n-Hg_0.7Cd_0.3Te epilayers were converted to p-Hg_0.7Cd_0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg_1 − xCd_xTe epilayers are improved by annealing and that as-grown n-Hg_1 − xCd_xTe epilayers can be converted to p-Hg_1 − xCd_xTe epilayers by in situ annealing.     

Suppression of Chaos and Phase Locking in Two Coupled Nonidentical Neurons under Periodic Input

Dynamical behaviour of two coupled neurons with at least one of them being chaotic is presented. Bifurcation diagrams and Lyapunov exponents are calculated to diagnose the dynamical behaviour of the coupled neurons with the increasing coupling strength. It is found that when the coupling strength increases, a chaotic neuron can be controlled by the coupling between neurons. At the same time, phase locking is studied by the maxima of the differences of instantaneous phases and average frequencies between two coupled neurons, and the inherent connection of phase locking and the suppression of chaos is formulated. It is observed that the onset of phase locking is closely related to the suppression of chaos. Finally, a way for suppression of chaos in two coupled nonidentical neurons under periodic input is suggested.     

Fabrication of Long-Period Fibre Gratings Using 800 nm Femtosecond Laser Pulses

Long-period fibre gratings inside standard single-mode optical communication fibres are successfully fabricated with infrared femtosecond laser pulses. The refractive index perturbations are well confined within the fibre core by choosing the proper laser focusing parameters and translation speed of the fibre during the direct laser writing process. With the self-focusing effect considered and at a constant average irradiation dose of 1.62 × 10^3 J/（cm^2μm）, the threshold intensity for fabricating long-period gratings with infrared femtosecond laser pulses is determined to be 5.13 × 10^13 W/cm2.     

Effect of electron-beam irradiation on the magnetic properties of Ga1−xMnxAs thin films grown on GaAs (100) substrates

The effect of electron-beam irradiation on the magnetic properties of (Ga_1−xMn_x)As thin films grown on GaAs (100) substrates by using molecular beam epitaxy was investigated. The ferromagnetic transition temperature (T_c) of the annealed (Ga_0.933Mn_0.067)As thin films was 160 K. The T_c value for the as-grown (Ga_0.933Mn_0.067)As thin films drastically decreased with increasing electron-beam current. This significant decrease in the T_c value due to electron-beam irradiation originated from the transformation of Mn substituted atoms, which contributed to the ferromagnetism, into Mn interstitials or Mn-related clusters. These results indicate that the magnetic properties of (Ga_1−xMn_x)As thin films grown on GaAs (100) substrates are significantly affected by electron-beam irradiation.