面阵CCD相机的飞秒激光损伤分析

研究了飞秒激光对CCD相机的干扰和损伤效应。采用波长为800 nm,脉宽为100 fs,单脉冲能量为500μJ的脉冲激光辐照行间转移型面阵CCD相机,测量了飞秒激光对CCD相机的损伤阈值。在逐步提高到达CCD靶面能量的过程中观察点损伤、线损伤和全靶面损伤等实验现象,得到了点损伤阈值为151.2 mJ/cm2,线损伤阈值为508.2 mJ/cm2,全靶面损伤阈值为5.91 J/cm2。测量了CCD在不同损伤情况下时钟信号线间及其与地间的电阻值,通过对比CCD损伤前后的电阻值,发现线损伤和全靶面损伤时CCD垂直转移时钟线间及其与地间的电阻值明显变小。最后分析讨论了损伤部位和损伤机理。     

TEA-CO2激光辐照HgCdTe图像传感器的实验研究

利用TEA-CO₂激光对碲铬汞(HgCdTe)图像传感器的干扰和损伤现象进行了实验研究,分析了干扰和损伤机理。探测器上激光能量密度小于255 mJ/cm2时,饱和像素仅出现在光斑区域,激光能量密度为425.8 mJ/cm2时,像素被损伤,观察到了弥散斑和暗环等现象。建立了探测器的激光辐照模型,计算了探测器的温升,讨论了温升与载流子浓度、迁移率的关系。分析认为,弥散斑的出现是探测器升温产生的热激发载流子浓度扩散所致,暗环的出现是迁移率与载流子浓度扩散共同作用的结果,像素的损伤则是因为温升导致汞的析出。     

500 fs超短脉冲激光对CCD探测器的破坏效应

 采用脉宽500 fs,脉冲能量250 μJ的超短脉冲激光辐照线阵CCD探测器,观察到了CCD从线性响应到像元饱和、饱和串音直至硬损伤的整个过程,并着重对两种辐照能量密度下的硬损伤机理进行了理论分析。结果表明：激光能量密度为0.45 μJ/cm²时,达到像元饱和;能量密度为0.14 J/cm²时,辐照6个脉冲后实现了CCD器件的硬损伤,硬损伤源于晶格被加热并汽化形成等离子体;能量密度为1.41 J/cm²时,单个脉冲就使CCD器件的输出波形无法辨认,2个脉冲后CCD器件没有任何信号输出,硬破坏源于电荷分离形成的电场库仑力。     

CCD不同损伤状态下光学成像系统猫眼回波

建立了不同损伤状态下光学成像系统的猫眼回波模型,分析了CCD各层被损伤对猫眼回波功率的影响,得到猫眼回波功率变化与CCD损伤程度的对应关系,并通过实验进行了验证.研究发现,在远场情况下成像光学系统的猫眼回波中心位置光强最强,且回波功率随CCD损伤程度的加深呈现先显著上升再迅速下降.最后缓慢下降的变化规律,可由此判断CCD各层结构的损伤状态.研究结果对远场条件下CCD被损伤程度的实时监测有一定的参考价值.     

脉宽对中红外激光带内损伤HgCdTe材料的影响

研究了脉宽对于中红外脉冲激光带内损伤碲镉汞（HgCdTe）材料阈值的影响,使用一维自洽模型对激光辐照HgCdTe材料程中的载流子数密度,载流子对数目流,载流子对能流,载流子温度和材料晶格温度等相关参数进行仿真计算。仿真结果表明,波长2.85 μm,脉宽30 ps～10 ns单脉冲激光带内辐照HgCdTe材料的损伤阈值为200～500 mJ/cm2。其中,300 ps～3 ns脉冲激光的损伤阈值相近,均为200 mJ/cm2且低于其他脉宽激光的损伤阈值。搭建实验光路并进行相关实验验证仿真模型的正确性。实验发现,波长2.85 μm、脉宽300 ps的单脉冲激光带内辐照HgCdTe材料的损伤阈值在200 mJ/cm2左右。相同条件下,10 ns单脉冲激光带内辐照HgCdTe材料的损伤阈值约474 mJ/cm2。百皮秒脉冲激光对HgCdTe材料的损伤过程结合了热击穿和光学击穿效应,其独特的毁伤机理加剧了材料的损伤。     

飞秒激光对镍基合金的损伤机制和阈值行为

针对飞秒激光加工镍基单晶高温合金材料,在能量密度为0~12.8J/cm2和脉冲个数为0~8000范围内,对表面损伤和加工侧壁区域进行了显微形貌分析,研究了不同能量密度和脉冲个数情况下的损伤机制,不同损伤机制的损伤阈值和热效应。镍基单晶高温合金经飞秒激光加工后,呈现两种损伤机制,分别为非热熔性损伤和热熔性损伤,单脉冲损伤阈值分别为0.23J/cm2和1.21J/cm2,孕育系数分别为0.90和0.92。在此基础上,建立了损伤机制和损伤阈值与能量密度和脉冲个数的定量关系,实验结果对加工无微裂纹和无再铸层的高质量镍基航空器件的工艺选择有实际指导意义。     

532 nm激光辐照下ZnSe薄膜光学特性研究

采用电子束热蒸发技术制备了ZnSe薄膜,研究了532 nm波长的不同能量(2.0 mJ、2.5 mJ、3.0 mJ)、不同脉冲数(3、10、15)激光诱导前后,ZnSe薄膜的透射率、折射率、消光系数、损伤阈值(LIDT)的变迁。研究结果显示,在能量为2.0 mJ激光辐照后,ZnSe薄膜折射率提高,透射率下降。相比较能量为2.5 mJ、3.0 mJ激光辐照,在能量为2.0 mJ激光辐照后折射率提高最明显,由2.489 4提高到2.501 6。薄膜损伤阈值从0.99 J/cm2提高到1.39 J/cm2(10脉冲辐照);薄膜的损伤经过了无损伤到严重损伤突变的损伤演变过程。采用原子力显微镜对预处理后薄膜表面粗糙度进行检测,发现激光预处理后的薄膜表面粗糙度Ra有所下降,从0.563 nm降低到0.490 nm(15脉冲激光辐照)。     

脉冲紫外激光刻蚀聚合物薄膜的发射光谱和形貌学研究

用聚焦的紫外XeCl准分子激光器轰击高分子聚合物薄膜(涤纶薄膜),由OMA系统接收其发射光谱.发现谱线主要为C2的Swan带和CN的红带,并与高压汞灯照射后的聚合物薄膜的发射谱进行了比较,在我们的实验精度内,没有发现区别.实验显示,每个光脉冲能刻蚀掉几分之一到几个微米的薄膜.激光的刻蚀效应存在波长和能量密度两个阈值.对于涤纶薄膜,能量密度的阈值约为40mJ/cm2.同时还作了紫外吸收光谱和SEM照片的分析.     

大口径DKDP元件的辐照损伤分布特性

大口径高能激光装置是各强国积极研究的重点项目。对装置内大口径光学元件损伤特性进行有效评估具有非常重要的意义,在此研究大尺寸光学元件表面损伤。通过分段拍摄、图像拼合、损伤点记录、统计与归纳等工作发现,不同尺寸损伤点的分布特性差异较大。结合统计学方法与类似实验对比、理论计算等方式对损伤点分布与样品辐照环境特性变化的关系进行分析。结果显示,损伤点的位置分布与辐照光束的能量密度关联紧密;系统光束(351 nm)在低于6 J/cm2时能量分布均匀,高于6.7 J/cm2时呈现较为明显的高斯分布状态。可以为大口径高能辐照环境的元件损伤特性评估提供有价值的参考,对大口径紫外激光器的日常运行与维护具有极其重要的工程意义。     

硅酸铅玻璃光敏性研究

采用四倍频的Nd∶YAG脉冲激光 (波长 2 6 6nm ,脉宽 10ns)对氧化铅摩尔分数在 0 3至 0 5的硅酸铅玻璃体样品进行照射 ,并对照射前后样品的折射率及紫外可见吸收光谱进行了测量。研究发现不同能量密度的2 6 6nm激光照射硅酸铅玻璃体样品 ,会使样品的紫外可见吸收光谱产生不同的变化 :当 2 6 6nm激光能量密度较高时 (15 0mJ/cm2 ) ,样品在可见区域的吸收系数明显增大 ,样品表面会产生褐色斑点 ;而当 2 6 6nm激光能量密度较低时 (5 0mJ/cm2 ) ,尽管累计剂量较大 ,样品表面无斑点产生 ,吸收系数稍有增加 ,而折射率下降明显 ,最大Δn =- 0 .2 5± 0 .0 4。对氧化铅摩尔分数为 0 4 3的硅酸铅玻璃用不同能量密度的 2 6 6nm激光进行照射 ,发现当激光能量密度大于某一阈值时 ,样品在可见区域的吸收系数突然增大 ,这可能是由于硅酸铅玻璃吸收 2 6 6nm激光能量导致局部温度升高而引起玻璃结构改变所致。     

氧化随机织构硅表面对单晶硅太阳电池性能的影响研究

热氧化生长的SiO\-2 薄膜经常在高效单晶硅太阳电池中被用作扩散掩膜,化学镀掩膜,钝化层或者基本的减反射层.在这些高效太阳电池中,经常使用碱性溶液对单晶硅表面进行处理,得到随机分布的正金字塔结构的织绒表面,减少表面的光反射.表面氧化后的正金字塔太阳电池暗反向电流-电压呈现"软击穿"现象,并联电阻明显下降.研究结果表明引起这些现象的原因在于氧化正金字塔表面会导致在体内形成位错型缺陷,这些缺陷能够贯穿整个pn 结,导致太阳电池的并联电阻下降,同时载流子在位错型缺陷在能隙中引入的能级处发生复合,导致空间电荷区 关键词： 热氧化 随机织构 位错 太阳电池     

连续波CO2激光对多晶硅探测器干扰损伤实验研究

为进一步研究激光对光电探测器的干扰及损伤,利用10.6 m连续CO2激光辐照多晶硅光电探测器,进行了干扰与损伤阈值实验研究,得到了对多晶硅探测器的饱和干扰、损伤干扰阈值分别为5.5510-4 W/cm2、0.48 W/cm2;分析了不同干扰功率、不同干扰时间的干扰效果,依据探测器受干扰程度提出了将干扰等级划分为点饱和、中度饱和、重度饱和与点损伤4个等级;通过干扰激光功率与干扰光斑面积的变化关系,得到两者按幂函数y=76.3x0.29关系变化,并依据该变化关系探讨了10.6 m脉冲激光对红外成像系统的干扰效果。     

Electrical and optical properties of titanium dioxide films

A method is described for producing insulating films of titanium dioxide by vacuum evaporation. Photomicrographs showing the growth of crystallites in the layer are presented, and X-ray and electron diffraction data are given. Sputtering regimes by means of which it is possible to produce compact layers of specific resistance 10¹³ ohm · · cm, dielectric strength 10⁶V/cm, and dielectric constant of 30 are given.By investigating optical density spectra and temperature variation of electrical conductivity for these specimens values were obtained for the optical and thermal forbidden band widths in titanium dioxide; these were 4.2 and 3.9 eV respectively. It was found that insulating films of titanium dioxide were completely transparent over a wide range of wavelengths from 300 to 1000 m. Using the same investigations in layers with electrical conductivity greater than 10^–13/ohm · · cm defects were discovered, which were connected with oxygen deficiency and gave three impurity energy levels in the forbidden band of titanium dioxide.In conclusion the authors would like to express their gratitude to Prof. K. V. Shalimova under whose guidance the work was executed.     

Effect of surface Si-Si dimers on photoluminescence of silicon nanocrystals in the silicon dioxide matrix

The effect of surface states of silicon nanocrystals embedded in silicon dioxide on the photoluminescent properties of the nanocrystals is reported. We have investigated the time-resolved and stationary photoluminescence of silicon nanocrystals in the matrix of silicon dioxide in the visible and infrared spectral ranges at 77 and 300 K. The structures containing silicon nanocrystals were prepared by the high-temperature annealing of multilayer SiO _x /SiO₂ films. The understanding of the experimental results on photoluminescence is underlain by a model of autolocalized states arising on surface Si-Si dimers. The emission of autocatalized excitons is found for the first time, and the energy level of the autolocalized states is determined. The effect of these states on the mechanism of the excitation and the photoluminescence properties of nanocrystals is discussed for a wide range of their dimensions. It is reliably shown that the cause of the known blue boundary of photoluminescence of silicon nanocrystals in the silicon dioxide matrix is the capture of free excitons on autolocalized surface states.     

1.319μm连续YAG激光束对可见光面阵CCD系统的干扰研究

 利用1.319μm连续钇铝石榴石激光对可见光面阵CCD系统进行干扰实验，分析了该CCD系统发生干扰饱和的原因，计算了1.319μm激光辐照面阵可见光CCD的干扰饱和阈值，利用实验数据在定量上验证了计算结果。当像面上激光功率密度达到10²W/cm²量级时，CCD出现饱和串音，达到10²W/cm²量级时，出现全屏饱和。     

Investigation of the interaction between electrical discharges and low resistivity silicon substrates

In this work the impact of single discharge pulses in air on single-crystalline, p-type silicon having a low bulk resistivity of 0.009-0.012 Ω cm is investigated. Compared to platinum specimens, the craters in silicon have lateral dimensions which are about one order of magnitude larger despite comparable values for the melting point and the melting energy. This finding is attributed to the substantially higher bulk resistivity of silicon leading a higher energy input into the substrate when spark loaded. The energy generated by joule heating is, however, distributed across a larger area due to a current spreading effect. To study the impact of different surface properties on the sparking behaviour, the crater formation on the silicon substrate is investigated applying coatings with different material properties, such as sputter-deposited aluminium layers and thermally-grown silicon dioxide. In general, the crater characteristics formed on unmodified silicon is not influenced when a thin aluminium layer of 24 nm is deposited. At higher film thickness above 170 nm, the sparking energy is almost completely absorbed in the top layer with low influence on the underlying silicon substrate. In the case of a dielectric top layer with a thickness of 155 nm, the formation of many small distinct craters is supported in contrast to a 500 nm-thick SiO₂ film layer where the generation of a single crater with a large area is energetically favoured. A surface roughness of several nm on the silicon probes has no measurable effect on crater formation when compared to an original surface characteristic with values in the sub-nm range.     

The effect of packing density on luminescence of amorphous SiO<Subscript>2</Subscript> nanoparticles

Photoluminescence of amorphous SiO₂ nanoparticles compressed in the form of tablets is studied under exposure to UV radiation. The observed luminescence spectrum is a broad band extending from the excitation wavelength to 700 nm and with a maximum at ~470 nm. The spectrum can be decomposed into two Gaussian components with maxima at ~460 and ~530 nm. As the pressure applied for sample preparation increases, the integrated intensities of these bands change in opposite directions—the intensity of the short-wavelength band increases, while that of the long-wavelength band decreases. It is concluded that these bands are due to different luminescence centers of silicon dioxide located on the surface and in the bulk of SiO₂ nanoparticles.     

19.4%‐efficient large‐area fully screen‐printed silicon solar cells

We demonstrate industrially feasible large‐area solar cells with passivated homogeneous emitter and rear achieving energy conversion efficiencies of up to 19.4% on 125 × 125 mm² p‐type 2–3 Ω cm boron‐doped Czochralski silicon wafers. Front and rear metal contacts are fabricated by screen‐printing of silver and aluminum paste and firing in a conventional belt furnace. We implement two different dielectric rear surface passivation stacks: (i) a thermally grown silicon dioxide/silicon nitride stack and (ii) an atomic‐layer‐deposited aluminum oxide/silicon nitride stack. The dielectrics at the rear result in a decreased surface recombination velocity of S_rear = 70 cm/s and 80 cm/s, and an increased internal IR reflectance of up to 91% corresponding to an improved J_sc of up to 38.9 mA/cm² and V_oc of up to 664 mV. We observe an increase in cell efficiency of 0.8% absolute for the cells compared to 18.6% efficient reference solar cells featuring a full‐area aluminum back surface field. To our knowledge, the energy conversion efficiency of 19.4% is the best value reported so far for large area screen‐printed solar cells. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)