AunY(n＝1—9)掺杂团簇的结构和电子性质研究

采用相对论有效原子实势(RECP)近似和密度泛函(B3LYP)方法，选择LANL2DZ基组，优化得到了Au_nY(n＝1—9)二元掺杂团簇稳定的基态结构和电子性质.研究结果表明，掺杂Y原子的Au_nY(n＝1—9)团簇随n的变化，其电离势、电子亲合能和费米能级与Au_n(n＝2—9)一样具有“奇-偶”振荡效应；团簇离子的稳定性具有“幻数”现象，Au₂Y⁺和Au₆Y⁺比其他团簇离子更稳定，与质谱实验结果一致；同一团簇中，团簇最稳定的异构体(基态)是趋于Y原子有最大的邻近的Au原子数. 关键词： Au-Y团簇 密度泛函 平衡几何结构 电子性质     

TinLa（n=1—7）的密度泛函研究

采用密度泛函理论（B3LYP）和LANL2DZ基组,对Ti_n和Ti_nLa（n=1—7）的各种异构体进行优化,并计算了它们的振动频率和电子结构特征.通过分析掺杂La原子前后团簇的平均键长、对称性、束缚能、能级间隙和磁矩,讨论了La原子引起Ti_n（n=1—7）团簇各种性质的变化及其产生机理. 关键词： 密度泛函 基态结构 稳定性 磁矩     

AlHn(n=1—3)的分子结构和AlH3热力学稳定性

在gaussian03基础上，分别用b3lyp和qcisd方法，在6-311++g^**基组水平上研究了AlH_n(n=1—3)分子及其一价阴阳离子的几何结构和谐振频率，计算了它们中性分子的离解能，第一垂直电离能，电子亲和能. 并与可能得到的实验值及文献上的理论计算值进行了比较. 发现qcisd方法得到的数据更接近实验值. 计算发现对AlH，AlH₂和AlH₃分子及其1价阳离子的Al—H键长，随着H原子数的增多，键长越短， 关键词： 3分子')" href="#">AlH₃分子 平衡几何结构 垂直电离能 垂直电子亲和能     

密度泛函理论研究MgnOn(n=2—8)团簇的结构和电子性质

采用密度泛函理论中的广义梯度近似对Mg_nO_n(n=2—8)团簇的几何构型进行优化,并对能量、频率和电子性质进行了计算.结果表明,当n=2,3时,团簇的最低能量结构是平面结构;当n≥4时, 团簇的最低能量结构可以看成是由Mg₂O₂和Mg₃O₃单元组成的三维结构.O—Mg—O的钝角和较多的电荷转移对团簇的稳定性 关键词： nO_n团簇')" href="#">Mg_nO_n团簇 几何结构 电子性质     

密度泛函理论研究Scn，Yn和Lan(n=2—10)团簇的稳定性、电子性质和磁性

通过采用密度泛函理论对Sc₂,Y₂和La₂基本性质的计算,选择在较优理论水平下系统地研究了Sc_n, Y_n和La_n(n=2—10)团簇的几何结构、稳定性、电子性质和磁性及其随团簇尺寸的变化趋势.此同族三种团簇的稳定性由原子密堆集几何结构效应决定,幻数均表现出一致的结果.La_n团簇的能隙比 关键词： n')" href="#">Sc_n n和La_n团簇')" href="#">Y_n和La_n团簇 密度泛函理论 电子性质 磁矩     

OsnN0,±(n=1—6)团簇几何结构与稳定性的理论研究

采用密度泛函理论(DFT)中的B3LYP方法,在Lanl2dz基组水平上对(Os_nN)^0,±(n=1—6)团簇的各种可能构型进行了几何参数全优化,得到了它们的基态构型;并对基态构型的平均结合能(E_b) 、二阶能量差分(Δ₂E_n) 、解离能(E_d)和能隙(E_g)进行了理论研 关键词： nN^{0')" href="#">Os_nN0 (n=1—6)团簇')" href="#">±(n=1—6)团簇 几何结构 稳定性 密度泛函理论}     

MgmBn(m=1,2;n=1—4)团簇结构与性质的密度泛函理论研究

用密度泛函理论(DFT)的杂化密度泛函B3LYP方法在6-31G基组水平上对Mg_mB_n(m=1,2;n=1-4)团簇各种可能的构型进行几何结构优化，预测了各团簇的最稳定结构.并对最稳定结构的振动特性、电离势、成键特性、极化率和超极化率等性质进行了理论研究.结果表明，团簇的最稳定结构大多是平面结构，团簇的稳定结构中通常是几个呈负电性的B原子形成一个负电中心，而其他B原子和Mg原子通常处在端位，且显正电性；团簇中通常是B-B键和B-Mg键共存，极少出现Mg-Mg键， 关键词： mB_n(m=1')" href="#">Mg_mB_n(m=1 n=1-4)团簇 密度泛函理论 结构与性质     

［Mg(NH2)2］n(n=1—5)团簇的密度泛函理论研究

用密度泛函理论的杂化密度泛函B3LYP方法在6-31G^*基组水平上对［Mg(NH₂)₂］_n(n=1—5)团簇各种可能的构型进行几何结构优化,预测了各团簇的最稳定结构.对最稳定结构的振动特性、成键特性、电荷特性等进行了理论研究.结果表明：团簇易形成链状结构,Mg—N键长为0.190—0.234 nm,N—H键长为0.101—0.103 nm,H—N—H键角为100.2°—107.5°;团簇中M 关键词： 2)₂］_n(n=1—5)团簇')" href="#">［Mg(NH₂)₂］_n(n=1—5)团簇 密度泛函理论 结构与性质 储氢材料     

(Ca3N2)n(n=1—4)团簇结构与性质的密度泛函理论研究

用密度泛函理论(DFT)的杂化密度泛函B3LYP方法在6-31G^*基组水平上对(Ca₃N₂)_n(n=1—4)团簇各种可能的构型进行几何结构优化,预测了各团簇的最稳定结构.并对最稳定结构的振动特性、成键特性、电荷特性和稳定性等进行了理论分析.结果表明,(Ca₃N₂)_n(n=1—4)团簇最稳定构型中N原子为3—5配位,Ca—N键长为0.231—0.251nm,Ca—Ca键长为0.295—0.358nm;N原子的自然电荷在-1.553e—-2.241e之间,Ca原子的自然电荷在1.035e—1.445e之间,Ca和N原子间相互作用呈现较强的离子性,Ca₃N₂和(Ca₃N₂)₃团簇有相对较高的动力学稳定性. 关键词： 3N₂)_n(n=1—4)团簇')" href="#">(Ca₃N₂)_n(n=1—4)团簇 密度泛函理论 结构与性质     

密度泛函理论对AunSc3(n=1—7)团簇结构和性质的研究

采用密度泛函理论中的广义梯度近似(GGA)对Au _{n Sc3(n=1—7)团簇的几何构型进行优化,并对能量、频率和电子性质进行了计算.结果表明,与纯金团簇相比,AunSc3 较早出现了立体结构,三角双锥结构的Au2Sc3是AunSc3(n>2)团簇生长的基元;Sc原子的掺杂提高了增强了Au 关键词： n} Sc₃团簇')" href="#">Au_n Sc₃团簇 几何结构 电子性质     

Al2O3Hx(x=1—3)分子团簇的结构与光谱研究

用密度泛函理论(DFT)的B3lyp方法在6-311++g(d,p)水平上对Al₂O₃H_x(x=1—3)分子的几何构型, 电子结构, 振动频率等性质进行了系统研究. 并给出了它们可能基态结构的总能量(E_T), 零点能(E_z), 摩尔热容(C_v), 标准熵(S), 原子化能(ΔE_m), 垂直电离能(IP)及垂直电子亲和能(E_A). Al₂O₃H和Al₂O₃H₂分子可能的基态的几何构型都为平面结构. Al₂O₃H₃的两个可能为基态的几何构型都是在立体Al₂O₃(D_3h)的几何结构基础上加三个氢原子构成. 这三个分子的能量最低结构为Al₂O₃H(²A′)C_s, Al₂O₃H₂(¹A′) C_s, Al₂O₃H₃ (²A) C₁.     

关于Al_nC和Al_nC~+(n=1—8)团簇结构和稳定性的研究

通过采用7种密度泛函理论DFT方法对AlnC进行计算,所得结果与实验数据比较,选择了B3lyp方法和6-311G(d)基组对AlnC及AlnC+(n=1—8)团簇进行结构优化和频率分析,得到了AlnC及AlnC+基态以及亚稳态结构.当n从小到大变化时,这些团簇的结构从平面向立体过渡,平面构型以三角形为主,立体构型主要是三棱柱笼状结构;在这些团簇中的高对称性结构中,中性团簇和阳离子只能有其一是稳定构型;在所研究的团簇中,Al2C和Al5C团簇较为稳定.     

On the mechanism of the interaction between oxygen and close-packed single-crystal aluminum surfaces

Using periodic first principles simulations we investigate the interaction of oxygen molecules with both regular Al(111) and Al(001) surfaces as well as a stepped Al(111) substrate. The limitation of this approach is the use of thin metallic slabs with a limited range for their coverage by adsorbed oxygen. The advantage is the detailed modeling that is possible at an atomic level. On the regular Al(111) surface, we have been able to follow the oxidation process from the approach of O₂ molecules to the surface, through the chemisorption and absorption of O atoms, up to the formation of first Al₂O₃ formula units. An energetically feasible mechanism for the formation of these Al₂O₃ ‘molecules’ is proposed but their aggregation to Al₂O₃ growth nuclei can only be surmised. On the Al(001) surface, absorption of oxygen atoms occurs more readily without any restrictions on the density of their surface overlayer, in agreement with the failure to observe a distinct chemisorption stage for O on Al(001) experimentally. The stepped Al(111) surface contains both {111} and {001} microfacets: the latter are obviously preferred for penetration of the oxygen adatoms into the subsurface space of the substrate. Before considering the O/Al interfaces the computational method is tested thoroughly by simulations on bulk Al and close-packed aluminum surfaces.     

Properties of an Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/Si interface

The phase chemical composition of an Al₂O₃/Si interface formed upon molecular deposition of a 100-nm-thick Al₂O₃ layer on the Si(100) (c-Si) surface is investigated by depth-resolved ultrasoft x-ray emission spectroscopy. Analysis is performed using Al and Si L_{2, 3} emission bands. It is found that the thickness of the interface separating the c-Si substrate and the Al₂O₃ layer is approximately equal to 60 nm and the interface has a complex structure. The upper layer of the interface contains Al₂O₃ molecules and Al atoms, whose coordination is characteristic of metallic aluminum (most likely, these atoms form sufficiently large-sized Al clusters). The shape of the Si bands indicates that the interface layer (no more than 10-nm thick) adjacent to the substrate involves Si atoms in an unusual chemical state. This state is not typical of amorphous Si, c-Si, SiO₂, or SiO_x (it is assumed that these Si atoms form small-sized Si clusters). It is revealed that SiO₂ is contained in the vicinity of the substrate. The properties of thicker coatings are similar to those of the 100-nm-thick Al₂O₃ layer and differ significantly from the properties of the interfaces of Al₂O₃ thin layers.     

Investigation on densification of Al2O3/B4C ceramic by ab initio calculation and experiment

Compared to experiment, the adsorption energies, bonding properties, and electronic structure of two different Al₂O₃/B₄C bridge sites with seven different Al₂O₃ surfaces are investigated by ab initio periodic density functional theory. The Al₂O₃/B₄C ceramic sintered in Ar is synthesized and measured by XRD and TEM. The calculated results reveal that the densification of O_bridge site of Al₂O₃/B₄C surface is better than that of Al_bridge. The Al₂O₃ (1 1 3)/B₄C with O_bridge is the most favorable and stable. The electronic structure shows that the electron hybridization exists between Al, O atoms and C, B atoms. The results indicate that the calculated results are in good agreement with the experiment.     

Magnetic entropy change and magnetic phase transition of LaFe11.4Al1.6Cx （x=0-0.8） compounds

The unit cell volume and phase transition temperature of LaFe11.4Al1.6Cx compounds have been studied. The magnetic entropy change, refrigerant capacity and the type of magnetic phase transition are investigated in detail for LaFe11.4Al1.6Cx with x=0.1, All the LaFe11.4Al1.6Cx （x=0-0.8） compounds have the cubic NaZn13-type structure. The addition of carbon atoms brings about a considerable increase in the lattice parameter. The bulk expansion results in the change of phase transition temperature （Tc）, Tc increases from 187K to 269 K with x varying from 0.1 to 0.8, Meanwhile an increase in the lattice parameter can also cause a change of the magnetic ground state from antiferromagnetic to ferromagnetic. Large magnetic entropy change IASI is found over a large temperature range around Tc and the refrigerant capacity is about 322J/kg for LaFe11.4Al1.6C0.1. The magnetic phase transition belongs in weakly first-order one for x=0.1.     

α-Al2O3(0001)基片表面结构与能量研究

对α-Al₂O₃(0001)晶体表层三种不同终止原子结构的计算模型， 在三维周期边界条件下 的κ空间中，采用超软赝势平面波函数描述多电子体系.应用基于密度泛函理论的局域密度 近似，计算了不同表层结构的体系能量，表明最表层终止原子为单层Al的表面结构最稳定. 对由10个原子组成的菱形原胞进行了结构优化，得到晶胞参数值(a₀＝0.48178n m)与实验 报道值误差小于1.3%.进一步计算了超晶胞(2×2)表面弛豫，弛豫后原第2层O原子层成为最 表层； 对不同表层O，Al原子最外层电子进行了布居分析，表面电子有更大的概率被定域在 O原子的周围，表面明显地表现出O原子的电子表面态. 关键词： 2O₃(0001)')" href="#">α-Al₂O₃(0001) 超软赝势 表面结构 表面态     

Enhanced luminescence of Dy in Y3Al5O12 by Bi co-doping

In the present paper, phosphors with the composition Y_3−x−yAl₅O₁₂:Bi³⁺_x, Dy³⁺_y were synthesized with solid state reactions. The luminescence properties of Bi³⁺ and Dy³⁺ in Y₃Al₅O₁₂(YAG) and the energy transfer from Bi³⁺ to Dy³⁺ were investigated in detail. Bi³⁺ in YAG emits one broad band peaking at 304 nm which can be ascribed to the transition from excited states ³P_{0, 1} to ground state ¹S₀. Dy³⁺ in YAG emits two groups of peaks around 484 and 583 nm, respectively, which can be ascribed to the transitions from excited state ⁴F_9/2 to ground states ⁶H_15/2 and ⁶H_13/2. The co-doping of Bi³⁺ enhances the luminescent intensity of Dy³⁺ by ∼7 times because Bi³⁺ can transfer the absorbed energy to Dy³⁺ efficiently. The mechanism of energy transfer was also discussed.     

Time evolution of the microstructures of LaAlO3 thin films grown on Si substrates

The structure and stability of amorphous LaAlO₃ thin films deposited on Si substrates were investigated by an X-ray reflectivity technique. The results show that the film/substrate interface contains a La_xAl_yO_zSi layer and a SiO_x layer. X-ray reflectivity profiles showed a continuous change after the films were exposed to ambient air for six months at room temperature. The X-ray reflectivity simulations suggest a diffusion of La and Al (mostly La) from the LaAlO₃ layer to the La_xAl_yO_zSi layer. This process stopped after about six months, and then the films reached a relative equilibrium state. Moreover, post-air-exposure annealing at 300 °C in air atmosphere could not change the final distributions of La and Al along the normal to the film’s substrate. On the other hand, the leakage-current density slightly decreases after annealing at 300 °C, which might be caused by the decrease of oxygen vacancies in the films. PACS 61.10.Kw; 77.55.+f; 68.60.Dv