Finite element simulation of stress distribution and development in 8YSZ and double-ceramic-layer La2Zr2O7/8YSZ thermal barrier coatings during thermal shock

In this paper, the thermal stress of the double-ceramic-layer (DCL) La₂Zr₂O₇/8YSZ thermal barrier coatings (TBCs) fabricated by atmospheric plasma spraying (APS) during thermal shock has been calculated. The residual stress of the coating after being sprayed has been regarded as the initial condition of the first thermal cycle. The characteristic of the stress development during the thermal cycle has been discussed, and the influence of the defects on the failure mode during the thermal cycle has also been discussed systematically. Finite element simulation results show that there exist higher radial thermal shock stresses on the ceramic layer surface of these two coatings. There also exist higher thermal stress gradient at the interface between the ceramic layer and the metallic layer. Higher thermal stress in 8YSZ/NiCoCrAlY coating lead to the decrease of thermal shock property as compared to that of LZ/8YSZ/NiCoCrAlY coating. The addition of LZ ceramic layer can increase the insulation temperature, impede the oxygen transferring to the bond coating and can also reduce the thermal stress. Considering from the aspects of thermal insulation ability and the thermal shock resistance ability, DCL type LZ/8YSZ TBCs is a more promising coating material compared with the single-ceramic-layer (SCL) type 8YSZ TBCs for the application.     

Optical properties of La2O3 doped diamond-like carbon films

A novel kind of La₂O₃ doped diamond-like carbon (DLC) films with thickness of 100-120 nm were deposited by unbalanced magnetron sputtering. Raman spectra and photoluminescence properties were measured by Raman spectrometer operated by 325 nm He-Cd laser and 514 nm Ar⁺ laser, respectively. The intensities of Raman spectra and photoluminescence are higher than those of pure DLC films. The La₂O₃ doped DLC films have the potential promising for the application of solar cell coatings.     

Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric

La₂O₃ grown by atomic layer deposition (ALD) and thermally grown GeO₂ are used to establish effective electrical surface passivations on n-type (1 0 0)-Ge substrates for high-k ZrO₂ dielectrics, grown by ALD at 250 °C substrate temperature. The electrical characterization of MOS capacitors indicates an impact of the Ge-surface passivation on the interfacial trap density and the frequency dependent capacitance in the inversion regime. Lower interface trap densities can be obtained for GeO₂ based passivation even though a chemical decomposition of the oxidation states occur during the ALD of ZrO₂. As a consequence the formation of a ZrGeO_x compound inside the ZrO₂ matrix and a decline of the interfacial GeO₂ are observed. The La₂O₃ passivation provides a stable amorphous lanthanum germanate phase at the Ge interface but also traces of Zr germanate are indicated by X-ray-Photoelectron-Spectroscopy and Transmission-Electron-Microscopy.     

Luminescence of La3F3[Si3O9]:Ce

The luminescence properties of Ce³⁺ in La₃F₃[Si₃O₉] are reported. Excitation and emission bands corresponding to 4f¹→5d¹ transitions of Ce³⁺ were identified. The center of gravity of the 5d states lies at remarkable high energy (43.2×10³ cm⁻¹) for Ce³⁺ in a silicate compound. This high value is attributed to the combined oxygen/fluoride coordination of the Ce³⁺ ion. Emission from the lowest 4f5d level to the ²F_5/2 and ²F_7/2 levels was found at 32.4×10³ and 30.4×10³ cm⁻¹. These results are compared with literature data on silicates and fluorides. From the values found for Ce³⁺, predictions are made for the positions of the 4f5d bands of Pr³⁺ and Er³⁺ in La₃F₃[Si₃O₉]. For both ions, it is concluded that in this host lattice emission is expected from high lying 4fⁿ energy levels.     

Interfacial reactions and oxidation behavior of Al2O3 and Al2O3/Al coatings on an orthorhombic Ti2AlNb alloy

The uniform and dense Al₂O₃ and Al₂O₃/Al coatings were deposited on an orthorhombic Ti₂AlNb alloy by filtered arc ion plating. The interfacial reactions of the Al₂O₃/Ti₂AlNb and Al₂O₃/Al/Ti₂AlNb specimens after vacuum annealing at 750 °C were studied. In the Al₂O₃/Ti₂AlNb specimens, the Al₂O₃ coating decomposed significantly due to reaction between the Al₂O₃ coating and the O-Ti₂AlNb substrate. In the Al₂O₃/Al/Ti₂AlNb specimens, a γ-TiAl layer and an Nb-rich zone came into being by interdiffusion between the Al layer and the O-Ti₂AlNb substrate. The γ-TiAl layer is chemically compatible with Al₂O₃, with no decomposition of Al₂O₃ being detected. No internal oxidation or oxygen and nitrogen dissolution zone was observed in the O-Ti₂AlNb alloy. The Al₂O₃/Al/Ti₂AlNb specimens exhibited excellent oxidation resistance at 750 °C.     

Vibrational and dielectric properties of La2Hf2O7 : Experiment and theory

The physical origin of the static dielectric constant and its relationship with lattice dynamics of La₂Hf₂O₇are studied by combining infrared spectroscopy and density functional perturbation theory (DFPT). Both La and Hf show obvious effective charge anomaly which is attributed to the hybridization between 2p states of the oxygen and 5d states of the cations, indicating a mixed covalent-ionic bonding between the cations and the oxygen. The dielectric response is determined by seven infrared phonon modes and the static dielectric constant extracted from infrared reflection spectrum is in close agreement with DFPT calculation. Both experiment and theory reveal that most of the contributions to the static dielectric constant are dominated by three infrared phonon modes at 137, 172 and 297 cm⁻¹. Two of them (172 and 297 cm⁻¹) are from the displacements of oxygen atoms inside HfO₆ octahedra and the other one (137 cm⁻¹) is from the bending of La₂O′ chain. This result indicates that the origin of the static dielectric constant of La₂Hf₂O₇ is directly connected with the two interpenetrating sub-networks of pyrochlore structure (HfO₆ octahedra and La₂O′ chain).     

Analysis of excimer laser annealing of amorphous SiGe on La2O3//Si structures

The reduction of complementary metal oxide semiconductor dimensions through transistor scaling is in part limited by the SiO₂ dielectric layer thickness. Among the materials evaluated as alternative gate dielectrics one of the leading candidate is La₂O₃ due to its high permittivity and thermodynamic stability. However, during device processing, thermal annealing can promote deleterious interactions between the silicon substrate and the high-k dielectric degrading the desired oxide insulating properties.The possibility to grow poly-SiGe on top of La₂O₃//Si by laser assisted techniques therefore seems to be very attractive. Low thermal budget techniques such as pulsed laser deposition and crystallization can be a good choice to reduce possible interface modifications due to their localized and limited thermal effect.In this work the laser annealing by ArF excimer laser irradiation of amorphous SiGe grown on La₂O₃//Si has been analysed theoretically by a numerical model based on the heat conduction differential equation with the aim to control possible modifications at the La₂O₃//Si interface. Simulations have been carried out using different laser energy densities (0.26-0.58 J/cm²), different La₂O₃ film thickness (5-20 nm) and a 50 nm, 30 nm thick amorphous SiGe layer. The temperature distributions have been studied in both the two films and substrate, the melting depth and interfaces temperature have been evaluated. The fluences ranges for which the interfaces start to melt have been calculated for the different configurations.Thermal profiles and interfaces melting point have shown to be sensitive to the thickness of the La₂O₃ film, the thicker the film the lower the temperature at Si interface.Good agreement between theoretical and preliminary experimental data has been found.According to our results the oxide degradation is not expected during the laser crystallization of amorphous Si_0.7Ge_0.3 for the examined ranges of film thickness and fluences.     

Electrical properties of La2O3 thin films grown on TiN/Si substrates via atomic layer deposition

The electrical as well as the structural properties of La₂O₃ thin films on TiN substrates were investigated. Amorphous stoichiometric La₂O₃ thin films were grown at 300 °C via atomic layer deposition technique by using lanthanum 2,2,6,6-tetramethyl-3,5-heptanedione [La(TMHD)₃] and H₂O as precursors. Post-annealing of the grown film induced dramatic changes in structural and the electrical properties. Crystalline phases of the La₂O₃ film emerged with the increase of the post-annealing temperature. Metal-insulator-metal (MIM) capacitor was fabricated to measure the electrical properties of the grown film. The dielectric constant of the La₂O₃ thin films increased with annealing temperature to reach the value of 17.3 at 500 °C. The leakage current density of the film post-annealed at 400 °C was estimated to be 2.78 × 10⁻¹⁰ and 2.1 × 10⁻⁸ A/cm² at ±1 V, respectively.     

Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium

The impact of the ZrO₂/La₂O₃ film thickness ratio and the post deposition annealing in the temperature range between 400 °C and 600 °C on the electrical properties of ultrathin ZrO₂/La₂O₃ high-k dielectrics grown by atomic layer deposition on (1 0 0) germanium is investigated. As-deposited stacks have a relative dielectric constant of 24 which is increased to a value of 35 after annealing at 500 °C due to the stabilization of tetragonal/cubic ZrO₂ phases. This effect depends on the absolute thickness of ZrO₂ within the dielectric stack and is limited due to possible interfacial reactions at the oxide/Ge interface. We show that adequate processing leads to very high-k dielectrics with EOT values below 1 nm, leakage current densities in the range of 0.01 A/cm², and interface trap densities in the range of 2-5 × 10¹² eV⁻¹ cm⁻².     

Microstructure and electrical properties of Ba0.5Sr0.5TiO3 thin films prepared on copper foils with La2O3 buffer layers

Ba_0.5Sr_0.5TiO₃ (BST) thin films were deposited on copper foils via sol-gel method with La₂O₃ as a buffer layer. The films were processed in almost inert atmosphere so that the substrate oxidation was avoided while allowing the perovskite film phase to crystallize. The existence of a La₂O₃ buffer layer between the BST thin film and Cu foil improved the dielectric constant and reduced the leakage current density of the BST thin film. Meanwhile, the BST thin film exhibited ferroelectric character at room temperature, which was contrast to the para-electric behavior of the film without the buffer layer. Effects of La₂O₃ buffer layer on the crystallizability and microstructure of BST thin films were also investigated.     

Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics

We describe the structural properties and electrical characteristics of thin thulium oxide (Tm₂O₃) and thulium titanium oxide (Tm₂Ti₂O₇) as gate dielectrics deposited on silicon substrates through reactive sputtering. The structural and morphological features of these films were explored by X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy, measurements. It is found that the Tm₂Ti₂O₇ film annealed at 800 °C exhibited a thinner capacitance equivalent thickness of 19.8 Å, a lower interface trap density of 8.37 × 10¹¹ eV⁻¹ cm⁻², and a smaller hysteresis voltage of ∼4 mV than the other conditions. We attribute this behavior to the Ti incorporated into the Tm₂O₃ film improving the interfacial layer and the surface roughness. This film also shows negligible degrees of charge trapping at high electric field stress.     

Luminescent properties of a new green emitting Eu doped CaZrSi2O7 phosphor for WLED applications

CaZrSi₂O₇ (CZS), a modification of the thortveitite family, was prepared as a polycrystalline powder material by the conventional solid-state reaction method. Structural, thermal and photoluminescence (PL) properties of the prepared material were investigated in order to evaluate its potentiality. XRD patterns confirm the monoclinic phase of CaZrSi₂O₇: Eu²⁺ phosphors.. Emissions arising from transitions between the 5d and 4f orbital gaps of Eu²⁺ are manifested in the broadband excitation and emission spectra with major peaks at 363 and 512 nm, respectively. The excitation wavelength matches well with that of the emission of the ultraviolet-light emitting diode (UV-LED). Concentration quenching occurs when the Eu²⁺ concentration is beyond 0.05 and the dipole-dipole interaction was the reason for the corresponding quenching mechanism. The temperature dependence of emission intensity of CZS: Eu²⁺ phosphor was investigated and it showed better thermal stability than the standard YAG: Ce³⁺ phosphor.     

Correlation between Al2O3 particles and interface of Al-Al2O3 coatings by cold spray

Al-Al₂O₃ composite coatings with different Al₂O₃ particle shapes were prepared on Si and Al substrate by cold spray. The powder compositions of metal (Al) and ceramic (Al₂O₃) having different sizes and agglomerations were varied into ratios of 10:1 wt% and 1:1 wt%. Al₂O₃ particles were successfully incorporated into the soft metal matrix of Al. It was found that crater formation between the coatings and substrate, which is typical characteristic signature of cold spray could be affected by initial starting Al₂O₃ particles. In addition, when the large hard particles of fused Al₂O₃ were employed, the deep and big craters were generated at the interface between coatings and hard substrates. In the case of pure soft metal coating such as Al on hard substrate, it is very hard to get proper adhesion due to lack of crater formation. Therefore, the composite coating would have certain advantages.     

Effects of humidified atmosphere on oxygen transport properties in La2Mo2O9

The effects of humidified atmosphere on oxygen surface exchange and diffusion in La₂Mo₂O₉ have been investigated. After annealing samples in D₂O vapour, the depth and line scan profiles of the OD^- species showed the incorporation of hydroxyl groups on the surface and of diffusion into the bulk. The hydroxyl diffusion process appears to be different from that of oxygen diffusion, and might indicate the existence of ambipolar diffusion of oxide ions and hydroxyl species in La₂Mo₂O₉.     

Emission features of Ho ion in Nb2O5, Ta2O5 and La2O3 mixed Li2O-ZrO2-SiO2 glasses

Li₂O-ZrO₂-SiO₂: Ho³⁺ glasses mixed with three interesting d-block elemental oxides, viz., Nb₂O₅, Ta₂O₅ and La₂O₃, were prepared. Optical absorption and photoluminescence spectra of these glasses have been recorded at room temperature. The luminescence spectra of Nb₂O₅ and Ta₂O₅ mixed Li₂O-ZrO₂-SiO₂ glasses (free of Ho³⁺ ions) have also exhibited broad emission band in the blue region. This band is attributed to radiative recombination of self-trapped excitons (STEs) localized on substitutionally positioned octahedral Ta⁵⁺ and Nb⁵⁺ ions in the glass network. The Judd-Ofelt theory was successfully applied to characterize Ho³⁺ spectra of all the three glasses. From this theory various radiative properties, like transition probability A, branching ratio β_r and the radiative lifetime τ_r, for ⁵S₂ emission levels in the spectra of these glasses have been evaluated. The radiative lifetime for ⁵S₂ level of Ho³⁺ ions has also been measured and quantum efficiencies were estimated. Among the three glasses studied the La₂O₃ mixed glass exhibited the highest quantum efficiency. The reasons for such higher value have been discussed based on the relationship between the structural modifications taking place around the Ho³⁺ ions.     

Low temperature quenching and high efficiency Tm, La or Tb co-doped CaSc2O4:Ce phosphors for light-emitting diodes

Low temperature quenching and high efficiency CaSc₂O₄:Ce³⁺ (CSO:Ce³⁺) phosphors co-doped with Tm³⁺, La³⁺ and Tb³⁺ ions were prepared by a solid state method and the phase-forming, morphology, luminescence and application properties of these phosphors were investigated. The results showed that co-doping of Tm³⁺, La³⁺ and Tb³⁺ ions can improve the luminescence properties and decrease temperature quenching of CSO:Ce³⁺ phosphor remarkably. High efficiency green-light-emitting diodes were fabricated with the prepared phosphors and InGaN blue-emitting (∼460 nm) chips. The good performances of the green-light-emitting LEDs made from co-doped CSO:Ce³⁺ phosphors confirm the luminescence enhancement and indicate that Tm³⁺, La³⁺ and Tb³⁺ co-doped CSO:Ce³⁺ phosphors are suitable candidates for the fabrication of high efficiency white LEDs.     

The study on porosity and thermophysical properties of nanostructured La2Zr2O7 coatings

Lanthanum-zirconium nano-powders were synthesized by molten salts method. Nanostructured lanthanum-zirconium coatings were deposited by air plasma spraying. Scanning electron microscopy and X-ray diffraction were carried out to analyze the as-sprayed coatings and powders. The pore size distribution and buck density of coatings were identified by mercury intrusion porosimetry. The thermophysical properties of the nanostructured coatings were also examined through laser flash technique and differential scanning calorimetry. The results demonstrate that the as-sprayed nanostructured coatings consist of the pyrochlore-type phase. The as-sprayed nanostructured lanthanum-zirconium coatings have a very low porosity. The thermal conductivity of the as-sprayed nanostructured lanthanum-zirconium coating is lower than that of the conventional coating between 200 °C and 950 °C, but when the temperature between 950 °C and 1300 °C, the result is reverse.     

The effect of Si surface nitridation on the interfacial structure and electrical properties of (La2O3)0.5(SiO2)0.5 high-k gate dielectric films

Thermal stability, interfacial structures and electrical properties of amorphous (La₂O₃)_0.5(SiO₂)_0.5 (LSO) films deposited by using pulsed laser deposition (PLD) on Si (1 0 0) and NH₃ nitrided Si (1 0 0) substrates were comparatively investigated. The LSO films keep the amorphous state up to a high annealing temperature of 900 °C. HRTEM observations and XPS analyses showed that the surface nitridation of silicon wafer using NH₃ can result in the formation of the passivation layer, which effectively suppresses the excessive growth of the interfacial layer between LSO film and silicon wafer after high-temperature annealing process. The Pt/LSO/nitrided Si capacitors annealed at high temperature exhibit smaller CET and EOT, a less flatband voltage shift, a negligible hysteresis loop, a smaller equivalent dielectric charge density, and a much lower gate leakage current density as compared with that of the Pt/LSO/Si capacitors without Si surface nitridation.     

Luminescence in trivalent rare earth activated Sr4Al2O7 phosphor

In this paper we report the combustion synthesis of trivalent rare-earth (RE³⁺ = Dy, Eu and Ce) activated Sr₄Al₂O₇ phosphor. The prepared phosphors were characterized by the X-ray powder diffraction (XRD) and photoluminescence (PL) techniques. Photoluminescence emission peaks of Sr₄Al₂O₇:Dy³⁺ phosphor at 474 nm and 578 nm in the blue and yellow region of the spectrum. The prepared Eu³⁺ doped phosphors were excited by 395 nm then we found that the characteristics emission of europium ions at 615 nm (⁵D₀?⁷F₂) and 592 nm (⁵D₀?⁷F₁). Photoluminescence (PL) peaks situated at wavelengths of 363 and 378 nm in the UV region under excitation at around 326 nm in the Sr₄Al₂O₇:Ce³⁺ phosphor.     

Preparation and electrical properties of a pyrochlore-related Ce2Zr2O8−x phase

A pyrochlore-related Ce₂Zr₂O_8−x phase has been prepared in a reduction reoxidation process from Ce_0.5Zr_0.5O₂ powders. Ce₂Zr₂O_8−x, based on a cubic symmetry with a=1.053 nm, decomposes in nitrogen at 800 °C, but remains stable up to 900 °C in air. It shows mixed oxygen ionic and electronic conductivity. The bulk conductivity at 700 °C is 4×10⁻⁴ S cm⁻¹ in air and 1×10⁻² S cm⁻¹ in nitrogen, and the activation energy is 1.27 eV in air. In nitrogen, the Arrhenius law is not obeyed, and a curved plot was obtained from 400 to 700 °C; then, the conductivity decreased rapidly due to the thermal decomposition of Ce₂Zr₂O_8−x.