钒氧酞菁(VOPc)与钒酞菁(VPc)分子的扫描隧道显微镜图像模拟

利用第一性原理方法模拟了自由钒氧酞菁(VOPc)和钒酞菁(VPc)分子的扫描隧道显微镜(STM)图像,与实验观察结果相当符合.理论STM图像都显示出亚分子内结构,外围呈四叶状.其主要差异表现在VOPc分子中心处的钒氧离子在STM图像中为一空洞,而在VPc分子的STM图像中钒离子为突起的亮斑.通过分析VOPc和VPc分子的电子结构,对模拟结果给出自洽的理论解释.造成两者图像显著不同的物理原因是VPc分子在费米能级附近有明显含dz2成分的分子轨道,导致钒离子在STM图像中央为突起的亮斑.而在VOPc分子中dz2分态密度峰位由于氧原子的加入使之远离费米能级,使STM不能“看到”VOPc分子中钒氧离子. 关键词： 钒氧酞菁 钒酞菁 STM图像模拟 电子结构     

二维kagome晶格过渡金属酞菁框架的第一性原理研究

本文提出了一种新型的具有kagome晶格结构的二维过渡金属酞菁薄膜(记为kag-TMPc),并通过第一性原理计算的方法系统的研究了其电子和磁学性质. 研究结果表明,二维kag-MnPc薄膜具有稳定的铁磁基态,通过基于海森堡模型的蒙特卡洛模拟,得到其居里转变温度为125 K. 二维kag-CrPc薄膜是自旋$S$=2的基态磁序为RT3态的理想kagome反铁磁材料. 光吸收谱的研究证明,与过渡金属酞菁分子相比,这种自组装形成的二维kagome过渡金属酞菁框架具有更广阔的光吸收范围,特别是在可见光区域.     

二维kagome晶格过渡金属酞菁框架的第一性原理研究（英文）

本文提出了一种新型的具有kagome晶格结构的二维过渡金属酞菁薄膜(记为kag-TMPc),并通过第一性原理计算的方法系统的研究了其电子和磁学性质.研究结果表明,二维kag-MnPc薄膜具有稳定的铁磁基态,通过基于海森堡模型的蒙特卡洛模拟,得到其居里转变温度为125 K.二维kag-CrPc薄膜是自旋S=2的基态磁序为RT3态的理想kagome反铁磁材料.光吸收谱的研究证明,与过渡金属酞菁分子相比,这种自组装形成的二维kagome过渡金属酞菁框架具有更广阔的光吸收范围,特别是在可见光区域.     

1,8-二巯基芘分子电学特性的理论研究

在第一性原理的基础上 ,对 1,8 二巯基芘分子的电学特性进行了理论研究 .采用了 3个Au原子构成的团簇来模拟Au表面 .首先利用密度泛函理论计算了 1,8 二巯基芘分子的电子结构及其和Au表面的相互作用 ,再利用前线轨道理论和微扰理论定量地确定了该分子和Au表面的相互作用能常数 .最后利用弹性散射格林函数法研究了该分子结的伏 安特性 .计算结果表明 ,分子中的硫原子和Au原子形成很强的共价键 .当外加偏压小于 1V时分子结存在电流禁区 ,随着偏压升高 ,分子结的电导出现平台结构 .分子结的电导特性和其电子结构密切相关 ,扩展分子轨道为电荷的迁移提供了通道 ,而局域轨道对电流贡献很小     

异构二芳基乙烯分子结低偏压电导机制的第一性原理研究

本文用结合密度泛函理论的非平衡格林函数方法研究了具有开环和闭环两种同分异构体的二芳基乙烯衍生物分子的结构-特性关系. 该功能分子通过末端的吡啶基团连接到取向沿(111)方向的金电极. 计算结果表明，异构体分子结的不同低偏压电导主要是由于它们具有不同的电子结构. 两种构型分子结的低偏压导电都主要来自于电子隧穿最低未占据分子轨道(LUMO). 由于具有扩展的单双键交替共轭结构，闭环构型分子具有更好的导电通道. 通过计算分子结在平衡状态下的电子转移，可发现更多电子转移到闭环构型分子，导致了其LUMO能量更靠近费米能级，从而有利于低偏压下的导电性能. 结果有助于理解二芳基乙烯分子及其衍生物分子的低偏压电导机制，也为设计更高性能的同类分子开关提供理论依据.     

烯烃聚合催化剂的ESR研究进展

很多烯烃聚合催化剂都含有过渡金属离子. 由于很多过渡金属离子存在未成对电子,ESR可以检测这些含有未成对电子的过渡金属离子,所以ESR检测技术可以被用于聚烯烃催化剂的研究. 该文综述了近年来ESR技术在烯烃聚合催化剂表征领域的研究进展,根据不同过渡金属分类讨论,主要涉及了Ti、Ni、V、Cr等几种常见的过渡金属催化剂的ESR研究.     

Sr/Si(100)表面TiSi2纳米岛的扫描隧道显微镜研究

为了解半导体衬底与氧化物之间存在的相互作用,以及量子尺寸效应对不同再构体的影响,制备了1—2个原子层厚的TiSi₂/Si(100)纳米岛,并使用扫描隧道显微镜(STM)表征手段详细地研究了TiSi₂ /Si(100)纳米岛的电子和几何特性. 结果发现:这些纳米岛表面显示出明显的金属性;其空态STM图像具有典型的偏压依赖性:在高偏压下STM 图像由三聚物形成的单胞构成,并在低偏压下STM 图像显示为密堆积的图案,这些不同的图案反映出不同能量位的态密度有明显差异. 关键词： 2纳米岛')" href="#">TiSi₂纳米岛 Sr/Si(100)表面 扫描隧道显微镜     

双核过渡金属羰基配合物团簇离子的红外光谱、结构和成键（英文）

双核过渡金属羰基配合物团簇是理解金属-金属和金属-配体相互作用的简单模型体系,在金属有机化学和催化中具有重要应用.利用脉冲激光溅射-超声分子束载带团簇离子源在气相中制备了双核第一列过渡金属羰基配合物团簇离子,采用选质量-红外光解离光谱方法获得了这些离子在羰基振动频率范围的振动光谱,并采用密度泛函方法对它们的结构和振动光谱进行了理论计算.通过对实验光谱与模拟光谱的比较,确定了它们的几何和电子结构,对饱和以及不饱和配位的同核和异核羰基配合物团簇正负离子的结构和金属-金属以及金属-配体成键进行了讨论.     

氢原子吸附对金表面金属酞菁分子的吸附位置、自旋和手征性的调控

实现单个功能有机分子构型、电子结构和自旋态的可逆调控, 是未来分子电子学和分子自旋电子学应用的关键. 近年来, 我们利用极低温强磁场超高真空扫描隧道显微镜系统, 结合第一性原理计算, 系统研究了氢原子吸附对金表面吸附的金属酞菁分子的自旋、手性和吸附位置的调控. 通过将金表面吸附的酞菁锰分子暴露于氢气或氢原子环境, 使得分子中心的磁性离子吸附单个氢原子, 从而实现了体系近藤效应由“开”到“关”的转变. 基于密度泛函理论的第一性原理计算表明, 氢原子吸附使得锰离子3d轨道内的电荷重排导致了分子的自旋由3/2降为1; 同时分子与金基底的间距增大, 使得近藤效应消失. 通过施加局域电压脉冲或者给样品加热, 可以实现单个或所有分子脱氢, 从而恢复体系的自旋态和近藤效应. 氢原子吸附还导致分子的优先吸附位置从金表面的面心立方堆垛区域变成了六角密排堆垛区域. 三个氢原子吸附于同一酞菁锰分子上, 可导致分子对称性的降低及分子镜面对称轴与金基底镜面对称轴的偏离, 从而导致手征性的出现. 这种分子吸附结构的手征性, 导致分子轨道也呈现出手征性. 这项工作为金属酞菁未来在分子电子学、自旋电子学、气体传感器等方面的应用提供了新思路.     

过渡金属4,4′,4″,4''''''''''''-四磺酸酞菁配合物的吸收光谱

报导了钼和第一过渡系列金属(Fe,Co,Ni,Cu,Zn)四磺酸酞菁配合物的吸收光谱。发现第一过渡系列Co,Ni,Cu,Zn四磺酸酞菁配合物在有机溶剂中的吸收光谱为单峰曲线(主峰),其极大值(λ_(max))有如下规律:Co~Ⅱ相似文献   

Bistability in scanning tunneling spectroscopy of Ga-terminated Si(111)

Bistable electron transport, a phenomenon usually associated with double-barrier structures, has been observed with a conventional STM junction formed between a metal tip and a Ga-terminated Si(111) surface at 77 K. Large hysteresis loops appear in the current-voltage characteristics when electrons are injected from the tip to the surface. The turn-on bias varies from -3.1 to -4.0 V and shows an inverse dependence on the tip-sample distance, indicating a strong field effect. The turn-off bias, however, is essentially pinned at a conductance threshold of -2.7 V.     

室温下单个甘氨酸分子在Cu(111)表面的操纵研究

先用低能电子衍射(LEED)证明了甘氨酸(NH₂-CH₂-COOH)能在室温下在Cu单晶表面产生比较稳定的吸附，然后用扫描隧道显微镜(STM)进一步研究了其吸附情况，看到单个甘氨酸分子在Cu(111)面上吸附稳定并至少有三种吸附状态.分子操纵研究结果表明，甘氨酸分子是被针尖“推着”移动的，它在Cu(111)面有固定的吸附位，并且移动时其吸附状态可以不变.研究结果表明，甘氨酸适合做室温下小分子的可控操纵研究，并且也说明室温下小分子的可控操纵是可能的. 关键词：     

Structural change of radiation defects in graphite crystals induced by STM probing

It was found that STM (scanning tunneling microscopy) images of defects in highly oriented pyrolytic graphite introduced by bombardment of 400 eV Ar⁺ ions in ultra-high vacuum exhibit substantial changes in the course of STM probing. Detailed examination of abrupt changes in the tunneling current measured at defect sites during voltage scans shows that the primary cause of the defect-image change was found to be neither the injected current nor the injected power but the absolute value of the voltage applied between the probe tip and the sample. We propose that an electric polarization induced force attracting the sample surface toward the probe tip widens the layer spacing of the graphite surface, leading to an acceleration of the lateral diffusion of interstitial atoms introduced by the ion irradiation, which results in a change in the defect structures and the accompanying electronic structures sensible in the STMimaging. Received: 14 June 2001 / Accepted: 7 September 2001 / Published online: 20 December 2001     

Structural transformation of Ge dimers on Ge（001） surfaces induced by bias voltage

Scanning tunnelling microscopy is utilized to investigate the local bias voltage tunnelling dependent transformation between （2×1） and c（4×2） structures on Ge（001） surfaces, which is reversibly observed at room temperature and a critical bias voltage of -0.80 V. Similar transformation is also found on an epitaxial Ce islands but at a slightly different critical bias voltage of -1.00V. It is found that the interaction between the topmost atoms on the STM tip and the atoms of the dimers, and the pinning effect induced by Sb atoms, the nacancies or the epitaxial clusters, can drive the structural transformation at the critical bias voltage.     

Bonding geometry of Mn-wires on the Si(100)(2 × 1) surface

The bonding geometry of monoatomic Mn-wires, which form on the reconstructed Si(100)(2 × 1) surface at room temperature, was investigated with scanning tunneling microscopy (STM). The Mn-wire structures are always perpendicular to the Si-dimer rows and the images exhibit a strong modulation of their apparent height as a function of bias voltage. The Mn-wire structures appear as depressions in the empty state images for bias voltages around 0.7 V, and as protrusions for all other bias voltages. It is suggested that the wire-images are defined by mixed Mn-Si states, either through a hybridization between the Mn d-states and the Si-p states, or backbonding from Mn-d electrons into the broken Si-dimer bond. The dominant bonding geometry shows that the Mn-wire maxima are positioned in between the Si-dimer rows, and a small percentage of about 20% is in registry with the Si-dimer rows, and might be described as defective wires. The experimental STM images cannot currently be described in a satisfactory manner with theoretical bonding models from the literature.     

A scanning tunnelling microscopy investigation of gold island formation from an octanethiol self-assembled monolayer on Au(1 1 1)

The release of gold atoms from an octanethiol monolayer on Au(1 1 1) and the subsequent formation of single-layer-high gold islands have been investigated using a scanning tunnelling microscope (STM) in air. When the bias voltage between the STM tip and the sample is above the threshold for water electrolysis, reactive desorption of the thiol molecules takes place leading to the release of gold adatoms. The number of released atoms has been evaluated as a function of exposure to the tip current under both positive and negative bias voltages. Tip-induced ripening of the gold islands, and more interestingly, tip-induced disintegration of small islands are observed.     

NaCl微晶粒大气中扫描隧道显微术成像研究

研究了NaCl晶粒在室温下大气环境中扫描隧道显微术(STM)成像性质。对不同形态大小的NaCl晶粒所作的研究表明:离子导电在隧道过程中起着关键作用。由于离子导电机理和强电场的作用,造成STM图像存在“牵引现象”,使针尖分辨能力降低。样品与针尖之间的偏压、环境湿度对隧道状态有较大的影响。     

Reversible local-modification of surface structure on clean Ge(0 0 1) by scanning tunneling microscopy below 80 K

The structure of the clean Ge(0 0 1) surface is locally and reversibly changed between c(4×2) and p(2×2) by controlling the bias voltage of a scanning tunneling microscopy (STM) below 80 K. It shows hysteresis for the direction of the sample bias voltage change. The c(4×2) structure is observed with the sample bias voltage V_b?−0.7 V. This structure is maintained at V_b?0.7 V with increasing the bias voltage from −0.7 V. When V_b is higher than 0.8 V, the structure changes to p(2×2). This structure is then maintained at V_b?−0.6 V with decreasing the bias voltage from +0.8 V. The area of the structure change can be confined in the single dimer row just under the STM tip using a bias voltage pulse. In particular, the minimum transformed length is four dimers along the dimer row in the transformation from p(2×2) to c(4×2). The observed local change of the reconstruction with hysteresis is attributed to the energy transfer process from the tunneling electron to the Ge lattice in the local electric field due to the STM bias voltage. A phenomenological model is proposed for the structure changes. It is based on a cascade inversion of the dimer buckling orientation along the dimer row.     

Field ion microscopy of W and PtTi at about 1000°C

Bright new images including the image of atoms have been observed when a positive high voltage (～ 15 kV) was applied to a specimen heated to ～ 1000°C in a field ion microscope. A channel plate multiplier was especially effective to this effect. Since those images were observed even in a high vacuum of 10^?7 Torr, where imaging gas hardly exists, and the brightness of the images does not depend on the residual gas pressure, they can not be the usual images caused by gas ions emitted from the tip of the specimen. A tentative interpretation is that they are caused by metal gas ions which are vaporized from the heating loop of tungsten and ionized at the tip of the specimen.