Energy transfer under impact load studied by molecular dynamics simulation

The process of amorphous silica clusters impact on a crystal silicon substrate is studied by molecular dynamics simulation, focusing on the energy transfer between clusters and the substrate under different impact conditions such as cluster size, impact velocity, and incidence angle. The impact process is divided into cluster deformation stage, cluster resilience stage, and cluster rebound stage according to the courses of energy change during the impact process. The simulation elucidates that the time of impact process of every cluster is only related to cluster size and is independent of impact velocity and incidence angle. The translational energy loss of the cluster and the potential energy increment of the substrate during cluster deformation stage, and the dissipation energy of system are independent of cluster size under the same impact energy and incidence angle. And the translational energy loss of the cluster during cluster rebound stage changes from energy absorption to energy release after the incidence angle becomes more than 60°. The rotational energy of the cluster may be omitted when the incidence angle is less than 15°. The ratios of the rotational energy increment of the cluster, the kinetic energy increment, and the potential energy increment of the substrate to the translational energy loss of the cluster are obviously influenced by impact conditions. And the ratios of the increment of the other categories of energy to the translational energy loss of the cluster are not sensitive to impact conditions.     

Sputtering of amorphous ice induced by C60 and Au3 clusters

Molecular dynamics simulations were performed to study the behavior of cluster SIMS. Two predominant cluster ion beam sources, C₆₀ and Au₃, were chosen for comparison. An amorphous water ice substrate was bombarded with incident energy of 5 keV. The C₆₀ cluster was observed to shatter upon impact creating a crater of damage approximately 8 nm deep. Although Au₃ was also found to both break apart and form a damage crater, it continued along its initial trajectory causing damage roughly 10 nm deep into the sample and becoming completely imbedded. It is suggested that this difference in behavior is due to the large mass of Au relative to the substrate water molecule.     

Deformation of slow liquid and solid clusters upon deposition: A molecular-dynamics study of Al cluster impact on an Al surface

Using molecular-dynamics simulation, we investigate the self-deposition of Al_n clusters (n < 4000) on an Al substrate at velocities below the velocity of sound. Both cold crystalline and hot liquid clusters are studied. We examine the cluster deformation after impact on the surface, which we quantify by its height and base radius. At a given cluster velocity, the shape of deposited crystalline clusters is rather independent of the cluster size; only at small cluster sizes, n ? 40, the clusters are less strongly deformed. With increasing cluster size, liquid clusters are more strongly deformed than crystalline clusters. Faster projectiles become more strongly flattened by the deposition process. Even clusters depositing with vanishing velocity show a finite deformation, which is considerable for smaller clusters. At large cluster speed, clusters penetrate deeper into the (1 0 0) surface than into the (1 1 1) surface and also deform more strongly.     

Large-scale molecular dynamics simulations of high energy cluster impact on diamond surface

Large-scale molecular dynamics simulations with high acceleration energy on a diamond surface were performed in order to investigate the surface erosion process. Accelerated argon or CO₂ clusters (∼960 atoms, 100 keV/cluster) impacted on the (111) surface of diamond which consisted of more than 1,000,000 carbon atoms. A typical hemispherical crater appeared about 0.7 ps after the impact, and two or three-layered shockwaves were formed and propagated to certain directions, but the crater was immediately filled up with the fluidized hot carbon material due to the collective elastic recovery before the reflection of the shockwave. The impact energy of the cluster was at first transferred mainly as kinetic energy of the diamond surface in a short time, and the potential energy was activated later. The activated carbon and oxygen atoms from the impact cluster stimulated the evaporation from the diamond surface for the CO₂ cluster impact while the evaporation seemed to be suppressed by the argon atoms themselves for the argon cluster impact. Received 22 November 2000     

Molecular dynamics simulation about porous thin-film growth in secondary deposition

The thin film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters’ depositions proceeds to form the thin film at short time as gas fluids through surface of substrate. In order to grow condensed thin film using series of cluster deposition, the effect of initial velocity, substrate temperature and density of clusters on property of deposited thin film, especially appearance of nanoscale pores inside thin film must be investigated. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000 and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. We have clarified that adhesion between clusters and substrate is greatly influenced by initial velocity. As a result, the exfoliation pattern of deposited thin film is dependent on initial velocity and different between them. One borderline dividing whole region into porous region and nonporous region are obtained to show the effect of growth conditions on appearance of nanoscale pores inside thin film. Moreover, we have also shown that the likelihood of porous thin film is dependent on the point of impact of a cluster relative to previously deposited clusters.     

Investigation of the interaction between electrical discharges and low resistivity silicon substrates

In this work the impact of single discharge pulses in air on single-crystalline, p-type silicon having a low bulk resistivity of 0.009-0.012 Ω cm is investigated. Compared to platinum specimens, the craters in silicon have lateral dimensions which are about one order of magnitude larger despite comparable values for the melting point and the melting energy. This finding is attributed to the substantially higher bulk resistivity of silicon leading a higher energy input into the substrate when spark loaded. The energy generated by joule heating is, however, distributed across a larger area due to a current spreading effect. To study the impact of different surface properties on the sparking behaviour, the crater formation on the silicon substrate is investigated applying coatings with different material properties, such as sputter-deposited aluminium layers and thermally-grown silicon dioxide. In general, the crater characteristics formed on unmodified silicon is not influenced when a thin aluminium layer of 24 nm is deposited. At higher film thickness above 170 nm, the sparking energy is almost completely absorbed in the top layer with low influence on the underlying silicon substrate. In the case of a dielectric top layer with a thickness of 155 nm, the formation of many small distinct craters is supported in contrast to a 500 nm-thick SiO₂ film layer where the generation of a single crater with a large area is energetically favoured. A surface roughness of several nm on the silicon probes has no measurable effect on crater formation when compared to an original surface characteristic with values in the sub-nm range.     

MD simulation study of the sputtering process by high-energy gas cluster impact

We performed molecular dynamics (MD) simulations to study the characteristic sputtering process with large cluster ion impact. The statistical properties of incident Ar and sputtered Si atoms were examined using 100 different MD simulations with Ar₁₀₀₀ cluster impacting on a Si(0 0 1) target at a total acceleration energy of 50 keV. The results show that the kinetic energy distribution of Ar atoms after impact obeys the high-temperature Boltzmann distribution due to thermalization through high-density multiple collisions on the target. On the other hand, the kinetic energy distribution of sputtered target atoms demonstrates a hybrid model of thermalization and collision-cascade desorption processes.     

The Fate of a Cluster Colliding onto a Substrate Dissipation of Translational Kinetic Energy

The fate of clusters emitted onto a substrate falls into several categories including repulsion, soft landing, migration, and explosion, depending on the interaction between the cluster and the substrate. This dynamic behavior of the clusters controls thin-film formation processes from clusters such as cluster ion beam deposition and chemical vapor deposition. Here we describe the collision processes of both Al and Au clusters with a kinetic energy of 0.56 eV/atom onto an amorphous SiO₂ substrate studied by molecular dynamics simulation, focusing on the dissipation of translational kinetic energy during the collision process. The simulation elucidated that the activation of thermal vibrational energy of the substrate promoted the sticking of the colliding clusters on the substrate. This result suggests that the dissipation of the translational kinetic energy of the colliding cluster is one of the factors that determine the structure formed on a substrate from vapor phase.     

Enhancement of the secondary ion emission induced by fast clusters

The emission yields of the secondary ions are measured by using a conventional time of flight (TOF) technique under bombardments of Mg and C₂, Ni and Si₂ with different energies, and C_n, Si_n and Ni_n (n = 1-3) with the different charge states and with energy of 1.5 MeV per atom, respectively. For the bombardments of C_n, Si_n and Ni_n, the enhancements of the secondary ion emissions increase with increasing cluster sizes and charge states. For the bombardments of Mg and C₂, Ni and Si₂, although the mass and the nuclear charges of C₂ and Si₂ are the same as or equivalent to Mg or Ni, respectively, the enhancements of the secondary ion emissions induced by the clusters of C₂ and Si₂ in a wide energy range are also clearly indicated. The instantaneous collective interaction of the cluster constituents plays an important role in the secondary ion emissions.     

Molecular dynamics simulations of sputtering of organic overlayers by slow, large clusters

The ion-stimulated desorption of organic molecules by impact of large and slow clusters is examined using molecular dynamics (MDs) computer simulations. The investigated system, represented by a monolayer of benzene deposited on Ag{1 1 1}, is irradiated with projectiles composed of thousands of noble gas atoms having a kinetic energy of 0.1-20 eV/atom. The sputtering yield of molecular species and the kinetic energy distributions are analyzed and compared to the results obtain for PS4 overlayer. The simulations demonstrate quite clearly that the physics of ejection by large and slow clusters is distinct from the ejection events stimulated by the popular SIMS clusters, like C₆₀, Au₃ and SF₅ at tens of keV energies.     

Cluster ion–solid interactions from meV to MeV energies

The nature of cluster ion–surface interactions changes dramatically with the kinetic energy and mass of the incoming cluster species. In this article we review some recent work on the nature of cluster–surface interactions spanning an energy range from a few tens of meV/atom to several MeV/cluster and cluster sizes in the range of 1–300000 atoms/cluster. We describe five possible distinct outcomes of a single cluster impact event: (i) deposition into a non-epitaxial configuration, (ii) deposition into an epitaxial configuration, (iii) crater formation by liquid flow, (iv) crater formation by hydrostatic pressure, (v) implantation. PACS 65.80.+n; 82.60.Qr; 61.46.Hk; 02.70.Ns     

In situ scanning tunneling microscopy studies of bimetallic cluster growth: Pt-Rh on TiO2(1 1 0)

The growth of Pt on clusters on TiO₂(1 1 0) in the presence and absence of Rh was investigated by scanning tunneling microscopy (STM) for Pt deposited on top of 0.3 ML Rh clusters (Rh + Pt). In situ STM studies of Pt growth at room temperature show that bimetallic clusters are produced when Pt is directly incorporated into existing Rh clusters or when newly nucleated clusters of pure Pt coalesce with existing Rh clusters. Low energy ion scattering experiments demonstrate that Rh is still present at the surface of the clusters even after deposition of 2 ML of Pt, indicating that Rh atoms can diffuse to the cluster surface at room temperature. Rh clusters were found to seed the growth of Pt clusters at room temperature as well as 100 K and 450 K. Furthermore, clusters as large as 100 atoms were observed to be mobile on the surface at room temperature and 450 K, but not at 100 K. Pt deposition at 100 K exhibited more two-dimensional cluster growth and higher cluster densities compared to room temperature experiments due to the lower diffusion rate. Increased diffusion rates at 450 K resulted in more three-dimensional cluster growth and lower densities for pure Pt growth, but cluster densities for Pt + Rh growth were the same as at room temperature.     

Different W cluster deposition regimes in pulsed laser ablation observed by in situ scanning tunneling microscopy

We report on how different cluster deposition regimes can be obtained and observed by in situ scanning tunneling microscopy by exploiting deposition parameters in a pulsed laser deposition process. Tungsten clusters were produced by nanosecond pulsed laser ablation in Ar atmosphere at different pressures and deposited on Au(1 1 1) and HOPG surfaces. Deposition regimes including cluster deposition-diffusion-aggregation, cluster melting and coalescence and cluster implantation were observed, depending on background gas pressure and target-to-substrate distance which influence the kinetic energy of the ablated species. These parameters can thus be easily employed for surface modification by cluster bombardment, deposition of supported clusters and growth of films with different morphologies. The variation in cluster mobility on different substrates and its influence on aggregation and growth mechanisms has also been investigated.     

Formation and stabilization of Fe-induced magic clusters on Si(1 1 1)-(7 × 7) template

We demonstrate the growth of Fe-induced magic clusters on Si(1 1 1)-(7 × 7) template by in situ scanning tunneling microscopy (STM). These clusters form near a dimer row at one side of the half-unit cell (HUC); and with three different equivalent orientations. A cluster model comprising three top layer Si atoms bonded to six Fe atoms at the next layer in the 7 × 7 faulted-half template is proposed. The optimized cluster structure determined by first-principles total-energy calculation shows an inward-shifting of the three center Fe atoms. The clusters and the nearby center-adatoms of the next HUCs appear with a significantly reduced height below bias voltages 0.4 V in high resolution empty-state STM images, suggesting an energy gap opening near the Fermi level at these localized cluster and adatom sites. We explain the stabilization of the clusters on the 7 × 7 template using the gain in electronic energy as the driving force for cluster formation.     

An investigation of the internal temperature dependence of Pd-Pt cluster beam deposition: A molecular dynamics study

We investigated the internal temperature dependence of the Pd_1−aPt_a cluster beam deposition in the present study via the molecular dynamics simulations of soft-landing. By analysis of the velocity distribution and diffusion coefficient of the bimetallic cluster, Pd atoms with better mobility improved the diffusibility of Pt atoms. The radial composition distribution showed that a Pt-core/Pd-shell structure of the cluster formed at high internal temperatures through migrations of the Pd atoms from inner to surface shells. In the soft-landing process, the diffusing and epitaxial behaviors of the deposited clusters mainly depended on the internal temperature because the incident energy of the cluster was very small. By depositing clusters at high internal temperatures, we obtained a thin film of good epitaxial growth as the energetic cluster impact. Furthermore, nonepitaxial configurations such as scattered nonepitaxial atoms, misoriented particles, and grain boundaries of (1 1 1) planes were produced in the growth of the cluster-assembled film. As the size of the incident cluster increased, the internal temperature of the cluster needed for better interfacial diffusion and contact epitaxy on the substrate also rose.     

Coarsening of mass-selected Au clusters on amorphous carbon at room temperature

Low-energy cluster beam deposition was used to deposit mass-selected Au_n clusters (n = 4, 6, 13 and 20) on amorphous carbon (a-C) substrates. The resulting samples were stored at room temperature under ambient conditions for time periods up to 32 months to analyze the coarsening behaviour of the clusters. Cluster-size distributions were measured in regular time intervals by transmission electron microscopy (TEM). The TEM experiments show a significant increase of the average cluster size with time analogous to classical surface Ostwald ripening (OR). The coarsening of Au clusters can be well described by steady-state diffusion-limited kinetics. The derived surface mass-transport diffusion coefficients at room temperature range between 1.1 and 3.8·10⁻²⁵ m² s⁻¹ for our samples. A detailed analysis of values suggests that, the rate of the surface OR for mass-selected Au_n clusters increases with the cluster size in the sequence: Au₄ ≈ Au₆ < Au₁₃ < Au₂₀ for the investigated range of Au clusters. Given that the initial, on-surface cluster-size distributions are nominally monodisperse, classical OR with cluster coarsening based only on the Gibbs-Thomson effect cannot explain the observed coarsening. The activation of the coarsening process is rationalized by initial variations of the cluster sizes due to the deposition process itself and/or the interaction of the clusters with the substrate. Moreover, the presence of initial deposited Au clusters as different isomers with slightly different chemical potential on the substrate, may also initiate the coarsening by surface OR. Furthermore, we find that the coarsening is most pronounced for the paucidispersed sample with Au_m (10 ? m ? 20) clusters. A possible explanation of this behaviour is the presence of an initial distribution of different cluster sizes directly after deposition.     

Morphology transition in cluster growth at different temperature

The cluster growth on two-dimensional square lattice at different temperature is investigated by Monte Carlo simulation, considering the binding energy of substrate, the coupling energy of nearest neighbor particles and a strain field. The simulation shows that, for 400 K ≤ T ≤ 480 K, the average branch width of the fractal cluster is independent to the temperature T, which is almost equal to the diameter of single particle. For 500 K ≤ T ≤ 680 K, however, the branch width increases gradually to 4 with temperature. With T further increases, clusters consist of large number of particles disappear, due to the strong activity of each particle. The coordination number distributions of clusters at different temperature are also studied.     

Surface structure and solidification morphology of aluminum nanoclusters

Classical molecular dynamics simulation with embedded atom method potential had been performed to investigate the surface structure and solidification morphology of aluminum nanoclusters Al_n (n=256, 604, 1220 and 2048). It is found that Al cluster surfaces are comprised of (1 1 1) and (0 0 1) crystal planes. (1 1 0) crystal plane is not found on Al cluster surfaces in our simulation. On the surfaces of smaller Al clusters (n=256 and 604), (1 1 1) crystal planes are dominant. On larger Al clusters (n=1220 and 2048), (1 1 1) planes are still dominant but (0 0 1) planes cannot be neglected. Atomic density on cluster (1 1 1)/(0 0 1) surface is smaller/larger than the corresponding value on bulk surface. Computational analysis on total surface area and surface energies indicates that the total surface energy of an ideal Al nanocluster has the minimum value when (0 0 1) planes occupy 25% of the total surface area. We predict that a melted Al cluster will be a truncated octahedron after equilibrium solidification.     

Ar-buffer-assisted deposition of Cu13 on Cu(1 1 1) surfaces

In this paper, the deposition of Cu₁₃ onto Cu(1 1 1) surface through argon buffer layers was investigated by molecular dynamics (MD) simulations. The interactions between Cu-Cu, Cu-Ar, and Ar-Ar were described by Finnis-Sinclair (FS) tight-binding potential and L-J potential, respectively. The impact energy was chosen to be 2-6 eV/atom in order to compare with experimental results. It was observed that with Ar-buffer layers, the Cu cluster deposited on the surface may retain its free cluster symmetry (I_h). Whereas, on originally bare Cu surface, the deposited Cu cluster lost its original symmetry completely and was recrystalized to have the same fcc structure as the substrate. The Ar-buffer dissipates most of the translational energy of the incident cluster. Therefore, it prevents the cluster from being overheated upon impinging. Furthermore, the interaction between Ar and Cu benefits the confinement of the cluster structure. Our study shows that with Ar-buffer layers, the lateral spread of deposited clusters is 20% smaller than that on the bare Cu surface. This is consistent with the experimental findings.     

Double rotation mechanism in small Cu clusters concerted diffusion over Cu{1 1 1} surfaces

In this work, we study the role of the double rotation mechanism in the concerted diffusion of two-dimensional small Cu clusters (up to 10 atoms) over Cu{1 1 1} surfaces. Our results show that the necessary energy to diffuse the cluster on any direction over the surface (overall activation energy) increases proportionally to the cluster size. However, the minimum energy necessary to just move the cluster center of mass presents a nonmonotonic increase. The reason for this behavior relies on the double rotation mechanism, which is observed in some clusters with diamond shape configuration. Consequently, clusters as big as hexamers can be expected to be surprisingly mobile with activation energies around 0.15 eV.