用于团簇负离子的共线光电子速度成像仪

描述了包含共线的光电子速度成像仪,以及与双阀激光溅射团簇源联用的时间飞行质谱装置．为了避免预混气体,两个脉冲阀和一个反应通道被用来产生反应负离子．共线的光电子成像仪采用了改进的速度成像透镜系统,它的能量分辨率优于3%．此外还报道了Si₄^-团簇在532和355 nm,以及Si₃C^- 团簇在532 nm的光电子速度成像．从实验图像中可以获得光电子能谱和各向异性参数．从Si₄^-团簇能谱上获得了中性的Si₄团簇的基态和第一激发态的振动频率分别为330和312 cm^-1．初步的实验结果证明这套光电子成像装置对研究团簇负离子的电子结构以及光脱附动力学非常有效.     

Invar合金的电子化学势均衡判据

用二元团簇作为描述Invar合金的基本结构单元,运用"团簇共振"结构模型,建立起以某一已知二元团簇与连接原子按1:x比例连接,描述Invar合金的电子化学势均衡判据.给出了Invar合金成分的经验分子式,即Invar合金成分=[团簇]1(连接原子)x.运用此判据,解析了部分Invar合金成分.发现典型的Invar合金实验成分与经验分子式相符合,说明基于"团簇共振"模型的Invar合金的电子化学势判据很好地解释了Invar合金成分的形成规律.     

用于团簇研究的激光反射式飞行时间质谱仪

报道了新建造的用于团簇研究的反射式飞行时间质谱仪 ,包括反射式飞行时间质谱仪的结构、原理、真空系统、控制系统等 .初步性能测试表明 :激光溅射 /分子束载带型团簇离子源能够产生丰富的一元、二元团簇离子 ;质谱仪对离子的质量分辨接近 2 0 0 0 ,并且质量门也有较高的质量选择性 .系统用于团簇研究 ,得到了一些初步实验结果 .     

(CoMn)n(n=1~5)合金团簇的结构和磁性

采用密度泛函理论中的局域自旋密度近似和广义梯度近似对(CoMn)n(n=1～5)团簇的几何构型进行优化、能量、频率和磁性计算,确定了团簇的基态,对其基态的磁性和电子结构进行了系统研究,并与相对应的一元团簇进行了结构和磁性比较.研究表明,两种方法确定的基态构型基本一致,当n=1～4时,等比CoMn二元合金团簇的几何形状仍与一元团簇相同;(CoMn)3和(CoMn)4团簇出现了磁性双稳态,显示铁磁性和反铁磁性耦合;二元CoMn合金团簇中Co、Mn原子磁性仍能保持一元Co、Mn团簇基态的磁性.     

钒—硫团簇的形成和光解

报导了用激光直接溅射法产生钒硫团簇，并用串级飞行时间质谱仪研究了所产生的团簇离子的分布及紫外激光光解规律。钒硫二元团簇正负离子都是由周边硫原子包围团簇骨架而构成的，骨架是由数目大体相同的钒和硫原子组成，表示成（ＶＳ）ｎ，它们结合紧密，构成了稳定的钒硫团簇的核心。稳定的团簇正离子为ＶｎＳｎ＾＋、ＶｎＳｎ＾＋＾＋和ＶｎＳｎ＋２＾＋（ｎ＝１，２，…１４）。ＶｎＳｎ＾＋团簇系列在ｎ＝２，４时具有很高的丰度     

负离子光致脱附实验中基于飞行时间法的电子谱仪的研制

负离子光致脱附电子谱的研究是目前国际上比较热门的课题.在本文中将介绍基于飞行时间法的电子能谱仪的研制工作.基于此谱仪的特点,配合合适的电场,可以转换成为探测立体角为4π的电子动量谱仪.     

Al_nC_4~(-/0)(n=2～4)团簇的结构和成键性质:光电子能谱和理论计算（英文）

本文采用尺寸选择的负离子光电子能谱与高精度理论计算,对Al_nC_4~(-/0)(n=2～4)团簇的结构和成键性质进行了研究.Al_2C_4~-团簇负离子的最稳定结构是一个C_(2v)对称的平面结构,其中两个C_2单元与两个铝原子分别相连.Al_2C_4~-团簇负离子的次稳定结构是一个线型结构,两个铝原子位于C_4线型结构两端,能量仅比最稳定结构高0.05 eV.中性Al_2C_4团簇是一个线型结构.Al_3C_4~-团簇负离子是一个平面结构,其中三个铝原子分别与两个C_2单元相连.而中性Al_3C_4团簇则是一个V字型结构.Al_4C_4~-团簇负离子和中性Al_4C_4团簇均为C_(2h)对称的平面结构,四个铝原子分别位于两个C_2单元的末端.Al_nC_4~(-/0)(n=2～4)团簇负离子的自适应自然密度配分的分析结果表明这些团簇中铝原子与C_2单元之间的化学键具有σ和π键特征.     

锰/磷、钛/磷二元团簇的激光溅射产生与光解

利用激光溅射法直接产生了锰／磷、钛／磷二元团簇正、负离子MxPy^±(M=Mn、Ti） ,并用串级飞行时间质谱仪研究了团簇离子的组成与激光光解规律。实验表明钛与磷间成簇的能力强于锰与磷间成簇的能力,且MPy^+(M=Ti、Mn)团簇离子系列表现出峰强度了胡所含磷原子数目的奇偶性变化,这可能与P4结构的特殊稳定性有关。激光光解实验表明,失去中性P2、P4的通道为主要光解通道。随着团簇离子的生长,锰／磷团簇正离子逐渐由富磷簇向富金属簇过渡,钛／磷则趋向于形成钛原子数目与磷原子数目接近相等的团簇正离子,而二者与磷形成的团簇负离子MxPy^-(M=Mn、Ti) 逐渐趋向于x ≈ y,随样品中磷含量增加,锰／磷易形成富磷簇,钛／磷的组成趋向不改变。     

Co_mAl_n(m+n≤6)团簇的结构和磁性理论研究

采用密度泛函理论中的广义梯度近似(DFT-GGA)对ComAln(m+n 6)合金团簇进行了系统的几何、电子结构和磁性质研究.研究结果发现ComAln(m+n 6)团簇最稳定结构倾向于形成Co—Al成键数最多的构型,其中的Co—Al二元合金团簇的最稳定结构类似于纯钴团簇.随着Al原子数的增多,团簇的平均磁矩呈线性降低趋势.ComAl(m=2—5)团簇的总磁矩均比Com+1团簇的小4μB,与实验上对较大CoNAlM团簇的磁性检测结果获得了很好地符合.ComAln团簇磁性的降低主要归因于非磁性Al元素的掺入以及Al掺杂后Co原子的整体自旋极化减弱.     

Au_2Ge_n~(-/o)(n=1～8)团簇结构演化和电子性质的光电子能谱和理论计算研究（英文）

本文利用尺寸选择的负离子光电子能谱和理论计算探索Au_2Ge_n~(-/0)(n=1～8)团簇的结构演化和电子性质.通过比较理论模拟谱与实验谱,并使用CCSD(T)理论方法计算异构体的相对能量,从而确定金锗混合团簇的全局最小结构.本文发现Au_2Ge_n~(-/0)(n=1～8)团簇的两个Au原子具有较高的配位数和较弱的亲金相互作用.负离子团簇和中性团簇的最稳定结构分别处于自旋双重态和自旋单重态.除了Au_2Ge_4~(-/0)和Au_2Ge_5~(-/0),负离子团簇和中性团簇的全局最小结构具有相似的结构特点.Au_2Ge_1~(-/0)团簇是一个C_(2v)对称的V形结构,而Au_2Ge_2~(-/0)团簇是一个C_(2v)对称的双桥连结构.Au_2Ge_4~-负离子团簇是两个Au原子盖帽的Ge_4四面体结构,而Au_2Ge_4中性团簇是两个Au原子盖帽的Ge_4菱形结构.Au_2Ge_(5～8)~(-/0)团簇主要采用三棱柱、四棱柱、及五棱柱结构.Au_2Ge_6是一个C_(2v)对称的四棱柱结构,并表现出σ和π双键性质.     

New Advances in Fluorogenic Anion Chemosensors

The development of anion chemosensors is an area of recent interest. We make here a comprehensive review of new advances on anion chemosensing, reported in the literature during the year 2004. The review follows a classification of the sensing systems based on design principles. It comprises: the binding site-signalling subunit approach, the displacement approach and the use of fluoro-chemodosimeters. The first two approximations are based on the use of a suitable anion coordination site coupled with a signalling unit which signals the anion coordination process via changes in its fluorescence behaviour. The two basic subunits are covalently linked in the binding site-signalling subunit approach and not in the displacement approach. In both approaches the fluorescence variation is reversible. The third way to the development of fluorogenic chemosensors is the use of chemodosimeters (also called reagents or reactands) that work usually through irreversible chemical reactions coupled with drastic changes in the fluorescence emission behaviour.     

Anion and cation vacancies in CdTe

The cadmium vacancy (V_Cd) and the tellurium vacancy (V_Te) in CdTe are identified by Electron Paramagnetic Resonance (EPR). The EPR spectrum of the singly ionised V_Te reveals cubic (unpertubed) symmetry and the hyperfine structure shows that the unpaired electron is equally spread over the four Cd neighbors. Further figand hyperfine interactions with the more distant neighbors are resolved by Electron Nuclear Double Resonance (ENDOR). The V_Cd is a double acceptor and the EPR spectrum is observed in its singly negative charge state. The symmerty is found to be trigonal, which can be explained in a model in which the hole occupies a dangling bondt ₂ orbital and the orbital degeneracy is removed by a static Jahn-Teller distortion. The hyperfine interaction shows that the hole is localised on one of the four Te neighbors.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

Photo-Detachment of a Noncollinear Triatomic Anion

Photo-detachment of a noncollinear triatomic anion is investigated by considering each atom of the molecular anion as a coherent source of detached-electron waves, originating in all possible directions. The waves traveling along three different trajectories result in a quantum interference that displays on a screen placed at a very large distance from the system. To explain this quantum interference, an analytical formula of detached-electron flux is derived using a collinear three-center model recently published. The detached-electron flux versus laser photon energy expression displays molecular geometry-dependent oscillatory structures on an observation plane. This oscillatory behavior in the result can be explained using the semiclassical closed-orbit theory. The outgoing electron waves produced from one coherent center are propagated in the vicinity of the sources at other two coherent centers which cause these oscillations. It is also observed that in a particular case, the noncollinear triatomic system reduces to the collinear three-center system.     

Anion antisite defects in GaAs and GaP

The electronic properties of anion antisite defects and the related ideal cation vacancies are calculated based on tight-binding Hamiltonians and using a novel recursion method. For the antisite defects symmetric A₁ states are found in the upper part of the fundamental gaps, and for the ideal vacancies T₂ states are found in the lower part of the gaps. These results for antisite defects compare favorably with recent ESR experiments.     

Anion adsorption induced reversal of coherency strain

Experimental results are presented for stress evolution, in vacuum and electrolyte, for the first monolayer of Cu on Au(111). In electrolyte the monolayer is pseudomorphic and the stress-thickness change is -0.60 N/m, while conventional epitaxy theory predicts a value of +7.76 N/m. In vacuum, the monolayer is incoherent with the underlying gold. Using a combination of first-principles based calculations and molecular dynamic simulations we analyzed these results and demonstrate that in electrolyte, overlayer coherency is maintained owing to anion adsorption.     

Anion polarizability functions in alkali halide crystals

Anion polarizabilities in alkali halide crystals are analysed as a function of interionic separation R. The anion polarizability is treated as a function of the anion and cation radii, with its partial derivatives approximated by those with respect to R for fixed cation and anion, respectively. With pressure derivatives of the ionic radii deduced from the crystal compressibility, assuming transferability among crystals, the polarizability derivatives with respect to ionic radius yield pressure derivatives of the polarizability that agree with experiment to within a factor of two. These results offer a useful means of predicting the pressure dependence of dielectric data.     

Anion vacancy centers in alkaline earth oxides

For many years, study of the defect state of oxide crystals was overshadowed by activity in the alkali halides. However, during the last decade, work on oxides has emerged as an important field of study in its. own right. This burgeoning of interest came about for many reasons. First the properties of defects in the alkali halides became well understood, and it was natural for workers in this field, to search for new pastures. Secondly, reliable supplies of good? quality single crystals became more readily available. Furthermore, a greater understanding of band structure, lattice dynamics, and mass transport became apparent, and concerted efforts were made by various researchers to introduce defects into oxides in a controlled manner.