铁磁结构中涡旋的动力学特性模拟研究

基于微磁学基本方程Landau-Lifshitz-Gilbert(LLG)方程,我们建立了软磁薄膜体系顺磁-铁磁转变过程中涡旋数目随时间的变化关系模型.磁化强度运动方程采用了传统的Runge-Kutta数值方法求解.计算结果发现:不同的交换场下,涡旋数变化可以分为两个阶段:第一阶段涡旋数目随时间急剧减少;第二阶段涡旋数目缓慢减少,直至不再变化,交换系数越小剩余的涡旋数会越多.退磁能对相变过程影响甚微,只有在交换系数(1.3E-12)较小时有可观察到的效应:有退磁场涡旋数目稍小.     

拓扑缺陷对Armchair型小管径多壁碳纳米管输运性质的影响

采用密度泛函理论和非平衡格林函数方法研究了纯净的及带有不同数目的 Stone-Wale拓扑缺陷下的扶手椅型单壁,双壁和三壁小管径碳纳米管的能带结构和电子输运性质,通过计算并分析不同偏压下的微分电导和非弹性电子隧穿谱(IETS),计算结果表明单壁,双壁和三壁碳纳米管的特征偏压区间分别为[-1.0 V,1.0 V],[-0.5 V,0.5 V]和[-0.25 V,0.25 V],特征偏压区间内SW拓扑缺陷所产生的电导波动平缓,而特征偏压区间外因缺陷的数目变化所带来的电导波动显著,通过IETS谱线的分析得到单壁,双壁和三壁碳纳米管的特征峰偏压分别为±1.25 V,±0.625 V和±0.125 V.碳纳米管的特征偏压区间和IETS特征峰偏压可为较小管径碳纳米管单壁,双壁和多壁类型的区分提供一种新的途径,同时也为小管径多壁碳纳米管的输运性质在出现拓扑缺陷时的响应提供参考依据.     

拓扑缺陷对Armchair型小管径多壁碳纳米管输运性质的影响

采用密度泛函理论和非平衡格林函数方法研究了纯净的及带有不同数目的Stone-Wale拓扑缺陷下的扶手椅型单壁, 双壁和三壁小管径碳纳米管的能带结构和电子输运性质, 通过计算并分析不同偏压下的微分电导和非弹性电子隧穿谱(IETS), 计算结果表明单壁, 双壁和三壁碳纳米管的特征偏压区间分别为[-1.0V, 1.0V], [-0.5V, 0.5V] 和[-0.25V, 0.25V], 特征偏压区间内SW拓扑缺陷所产生的电导波动平缓, 而特征偏压区间外因缺陷的数目变化所带来的电导波动显著, 通过IETS谱线的分析得到单壁, 双壁和三壁碳纳米管的特征峰偏压分别为 1.25V, 0.625V和 0.125V. 碳纳米管的特征偏压区间和IETS特征峰偏压可为较小管径碳纳米管单壁, 双壁和多壁类型的区分提供一种新的途径, 同时也为小管径多壁碳纳米管的输运性质在出现拓扑缺陷时的响应提供参考依据.     

单相泵驱流体回路不同拓扑结构的散热性能分析

基于单相泵驱流体回路,研究了系统在不同拓扑结构下的控温性能。采用集总参数法建立了流量计算及分配模型、流体与设备换热模型、混合点温度计算模型以及热流计算模型,并运用Openmodelica仿真平台,开展了不同拓扑结构对设备温度、系统流量和系统出口工质温度的影响分析,探究了不同载荷占空下设备散热效果、系统峰值损耗和内能变化等的动态特性。结果表明,一方面,并联拓扑体系设备散热及均温效果较好;另一方面,热惯性对系统内能变化影响较大,在系统热惯性一定的条件下,载荷占空比越大工质冷却响应时间越大,系统能量损失越小。     

玻璃包覆纯铜丝快速冷却温度场数值模拟

建立了玻璃包覆纯铜丝快速冷却过程温度场的有限元计算模型,模拟得出了冷却过程丝线横断面的温度分布图及节点温度随时间的变化关系。研究了冷却水温度、水流速度对玻璃包覆纯铜丝冷却效果的影响。结果表明:快冷时玻璃层内的温差最大可达45 K/m,铜芯内温差最大为0.12 K/m; 随着冷却水流速增大,冷却效果增强,流速达到0.5 m/s时冷却能力饱和; 冷却水温在283～303 K范围内变化时,冷却效果基本不变。     

液态合金NiAl凝固过程中微观结构转变的分子动力学模拟

采用分子动力学模拟方法对液态NiAl凝固过程进行了研究 ,考察了不同冷却速度下液态NiAl结构变化特点 ,原子间相互作用势采用F S多体势 ,结构分析采用键取向序和对分析技术 .计算结果表明 ,冷却速度对液态NiAl结构转变有重要影响 ,在不同的冷却速度下 ,NiAl凝固过程出现了明显不同 ,冷速为 4× 10 13 和4× 10 12 K/s时 ,NiAl快速凝固为无序的非晶体结构 ;而在较慢的 8× 10 11K/s冷速下 ,NiAl凝固为晶态结构 .给出了不同冷却速度下液态NiAl结构转变的微观信息 .     

类锂硅离子软X射线激光研究

在激光等离子体典型参数条件下，利用碰撞－辐模型计算了类锂硅离子５ｆ－３ｄ和４ｆ－３ｄ跃的粒子数反转比率和激光增益系数。讨论了不同热带条件和不同冷却速度下，激光增益系统数的变化。计算结果表明，高功率，短脉冲激光生产的高温等离子体在快速冷却条件下能产生软Ｘ射的线激光增益。     

耐蚀合金Au3Cu高温冷却过程中能量及结构转变的分子动力学模拟

用分子动学模拟方法对液态Au3Cu冷却过程进行了研究,考察了不同冷却速度下Au3Cu结构变化特点,原子间相互作用势采用F-S多体势,结构分析采用键取向序和对分析技术。计算结果表明,冷却速度对液态Au3Cu能量及结构转变有重要影响,给出了不同冷却速度下液态Au3Cu结构转变的微观信息。     

一维σ^＋—σ^—冷却光和再抽运光对多能级钠原子作用研究

表述了包含钠２４个磁能级的原子在一维σ＾＋－σ＾－冷却光和再抽运光中各磁子能级粒子分布随时间变化的公式及多普勒冷却力，计算并讨论了不同冷却光失谱情况，不同抽抽运光强和失谐情况下原子的多普勒冷却力的上能级粒子数占基态总粒子数的比例Ｐ（ｖ）随速度的变化，该模型的计算结果能解释在磁光陷阱（ＭＯＴ）实验中的现象和和为磁光陷阱实验选择参数时的参考。     

负性向列相液晶电致缺陷的产生与湮灭过程

取向有序的液晶材料具有丰富的物理各向异性、外场响应性、物理效应,催生了新一代的光电应用.利用电场可在液晶中产生拓扑缺陷.缺陷动态过程受材料自身特性和外界条件的影响尚未明晰.本文选用介电各向异性△ε在-1.1到-11.5之间的7种向列相液晶材料,通过施加线性增加的交流电场,研究了负性向列相液晶电致脐点缺陷产生到湮灭过程中材料特性(△ε)和外界条件(温度、外加电场参数)对脐点缺陷的标度规律及湮灭快慢的影响.结果表明:在不同的△ε、温度和电场频率下,缺陷产生过程均满足Kibble-Zurek机制,即缺陷密度与电场变化率之间存在标度关系,且标度指数约为1/2;温度越高,产生缺陷密度越大;△ε越强或电场变化越快,缺陷湮灭速度越快.本文的研究厘清了拓扑缺陷产生湮灭与材料特性和外界条件的依赖关系,有利于对软物质中拓扑缺陷动态过程的认识和理解.     

A gauge theory for two-band model of Chern insulators and induced topological defects

In this paper a gauge theory is proposed for the two-band model of Chern insulators.Based on the so-calle't Hooft monopole model,a U(1)Maxwell electromagnetic sub-field is constructed from an SU(2)gauge field,from which arise two types of topological defects,monopoles and e2 merons.We focus on the topological number in the Hall conductance σ_xy=e²/hC,where C is the Chern number.It is discovered that in the monopole case C is indeterminate,while in the meron case C takes different values,due to a varying on-site energy m.As a typical example,we apply this method to the square lattice and compute the winding numbers(topological charges)of the defects;the C-evaluations we obtain reproduce the results of the usual literature.Furthermore,based on the gauge theory we propose a new model to obtain the high Chern numbers|C|=2,4.     

APPLYING THE HOMOTOPY EQUIVALENCE TRANSFORMATION OF TOPOLOGICAL SPACE SETS TO THE TOPOLOGICAL CLASSIFICATION OF STATES AND DEFECTS IN ORDERED MEDIA

In this paper the application of homotopy equivalence transformation (HET) of topological space sets to the topological classification of states and defects in ordered media is discussed. Firstly, an argument is pres-ented about the idea that for simplifying and even working out the classification and constructing homotopy class sets into groups, it is crucial to utilize the HET. As the theoretical basis for doing this we sum up the relevant results in homotopy theory into a theorem, called the "invariance theorem for HET". Secondly, in order to favor the utilization of this theorem, several propositions on homotopy equivalence between space sets are given. Finally, the absolute and relative topological dassification of states and defects is systemtically studied. The main results obtained are embodied in eight theorems.     

Electronic properties of graphene with a topological defect

Various types of topological defects in graphene are considered in the framework of the continuum model for long-wavelength electronic excitations, which is based on the Dirac–Weyl equation. The condition for the electronic wave function is specified, and we show that a topological defect can be presented as a pseudomagnetic vortex at the apex of a graphitic nanocone; the flux of the vortex is related to the deficit angle of the cone. The cases of all possible types of pentagonal defects, as well as several types of heptagonal defects (with the numbers of heptagons up to three, and six) are analyzed. The density of states and the ground state charge are determined.     

Topological Defects in Liquid Crystal Films

A topological theory of liquid crystal films in the presence of defects is developed based on the Ф-mapping topological current theory. By generalizing the free-energy density in ＂one-constant＂ approximation, a covariant free- energy density is obtained, from which the U（1） gauge field and the unified topological current for monopoles and strings in liquid crystals are derived. The inner topological structure of these topological defects is characterized by the winding numbers of Ф-mapping.     

INFLUENCE OF THERMAL TREATMENTS ON THE POLYMORPHISM IN STEREOIRREGULAR ISOTACTIC POLYPROPYLENE: EFFECT OF STEREO-DEFECT DISTRIBUTION

The influence of cooling rate from the melt on the polymorphism and crystallinity is investigated as a function of isotacticity and stereo-defect distribution in polypropylenes. Detailed analysis of wide angle x-ray diffraction patterns shows that crystallinity in the materials used is nearly independent of the experimental cooling rates (0.5–40°C/min). At high cooling rates, the materials exist mainly in the α-phase, whereas the amount of the γ-phase increases at the lower cooling rates. With an increasing amount of stereo-defects, this cooling-rate dependence of the polymorphism is enhanced. The effect of different stereo-defect distributions, as observed in metallocene-(random) and Ziegler–Natta (blocklike) derived isotactic polypropylenes, was investigated. The formation of the γ-phase is more prevalent in materials with a random defect distribution compared to the materials in which the stereo-defects have a blocklike distribution. The crystallinity decreases more rapidly as a function of the tacticity in the random defect-distributed materials.     

非相对论Chern-Simons多涡旋解的拓扑结构(英文)

运用规范势分解理论研究了Jackiw Pi模型中的自对偶方程, 得到一个新的自对偶方程, 发现了Chern Simons多涡旋解与拓扑荷之间的联系。为了研究Jackiw Pi模型多涡旋解的拓扑性质, 构造了一个新的静态自对偶Chern Simons多涡旋解,每个涡旋由5个实参数描述。 2个实参量用来描述涡旋的位置, 2个实参量用来描述涡旋的尺度和相位, 还有一个实参量描述涡旋的荷。 为了研究拓扑数对涡旋形状的影响, 给出了具有不同拓扑数的多涡旋解。 另外还研究了该涡旋解的磁通量的拓扑量子化。     

Fe-Si-Al合金的中子衍射研究

用中子衍射方法测定了Fe-Si-Al合金的长程有序度和Fe原子的磁矩。结果表明,合金经不同冷却速度的热处理后,其长程有序度是不同的,这种有序度的差异可能是造成二者有显著不同的磁导率的重要原因之一。 关键词：     

旋流扩散燃烧中旋流数对热NO生成的影响

本文对旋流扩散燃烧进行了数值模拟，研究旋流数对热ＮＯ生成的影响，其中对湍流采用Ｒｅｙｎｏｌｄｓ应力方程模型，对燃烧采用ＥＢＵ－Ａｒｒｈｅｎｉｕｓ模型，对热ＮＯ生成采用设定ＰＤＦ的模型。预报了不同旋流数下轴向和切向的平均和脉动速度、温度和ＮＯ浓度，指出随着旋流数的增大，计算得到的出口平均ＮＯ浓度首先升高然后下降。这一趋势和本文作者最近的实验结果的趋势一致．随着旋流数的增大，湍流脉动首先下阵然后升高，而进口附近的温度上升，二者综合效果造成上述趋势、因此在实际燃烧器中，完全靠改变族流数来控制ＮＯ生成是不现实的。应该采取其他方法来降低ＮＯ的生成。     

冷却方式对冻干脂质体药物的粒径和包封率影响的实验研究

衡量脂质体药物品质的两个重要指标是脂质体包裹药物的粒径分布和包封率,在冷冻干燥过程中脂质体药物的粒径分布和包封率会发生变化。本文通过实验研究了两种快慢不同冷却方式对脂质体药物冻干后粒径的分布和包封率的影响。     

Effect of noise on defect chaos in a reaction-diffusion model

The influence of noise on defect chaos due to breakup of spiral waves through Doppler and Eckhaus instabilities is investigated numerically with a modified Fitzhugh-Nagumo model. By numerical simulations we show that the noise can drastically enhance the creation and annihilation rates of topological defects. The noise-free probability distribution function for defects in this model is found not to fit with the previously reported squared-Poisson distribution. Under the influence of noise, the distributions are flattened, and can fit with the squared-Poisson or the modified-Poisson distribution. The defect lifetime and diffusive property of defects under the influence of noise are also checked in this model.