O<Subscript>2</Subscript> photodesorption from AuO<Stack><Subscript>2</Subscript><Superscript>−</Superscript></Stack> and Au<Subscript>2</Subscript>O<Stack><Subscript>2</Subscript><Superscript>−</Superscript></Stack>

Using time-resolved photoelectron spectroscopy, the decay channels of AuO₂⁻ and Au₂O₂⁻ following photoexcitation with 3.1-eV photons have been studied. For AuO₂⁻, a state with a rather long lifetime of 30 ps has been identified. Its decay path could not be determined but photodesorption can be excluded. For Au₂O₂⁻, the spectra indicate O₂ desorption after 3.1-eV photoexcitation on a time scale of 1 ps. While comparing these results on Au _n O₂⁻ with analogous data on Ag _n O₂⁻ clusters, a discernible pattern emerges: for dissociatively bound O₂(AuO₂⁻, Ag₃O₂⁻), there are long-living excited states which do not decay by oxygen desorption, while for molecular chemisorption (Au₂O₂⁻, Ag₂O₂⁻, Ag₄O₂⁻, Ag₈O₂⁻), the 3.1-eV photoexcitation triggers fast O₂ desorption with a high quantum yield.     

Magnetic and magnetoresistive properties of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>–Sr<Subscript>2</Subscript>FeMoO<Subscript>6–δ</Subscript>–Al<Subscript>2</Subscript>O<Subscript>3</Subscript> nanoheterostructures

A method has been developed for fabricating nanoporous matrices based on anodic aluminum oxide for the deposition of ferromagnetic nanoparticles in them. The modes of deposition of strontium ferromolybdate thin films prepared by the ion-plasma method have been worked out, and the magnetic and magnetoresistive properties, structure, and composition of the films have been investigated. It has been revealed that the microstructure and properties of the strontium ferromolybdate films deposited by ionplasma sputtering depend on the deposition rate and the temperature of the substrate. Based on the measurement of the electrical resistivity of nanoheterostructures in a magnetic field, it has been found that the magnetoresistance reaches 14% at T = 15 K and B = 8 T, which is due to the manifestation of tunneling magnetoresistance.     

Zn$lt;sub$gt;1-$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;Mg$lt;sub$gt;$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;O薄膜的光致发光特性研究

采用脉冲激光沉积方法在单晶Si（100）衬底上制备出c轴取向的Zn_1-xMg_xO单晶薄膜,通过荧光光谱仪研究了薄膜的光致发光特性.实验结果表明,Mg含量增加,Zn_1-xMg_xO单晶薄膜的紫外发光峰蓝移,发光峰强度减弱,缺陷发光强度增强.同时发现,由于Mg的掺杂,引入了一些束缚能较大的局域束缚态.对于氧气氛下制备的样品,实验发现紫外峰和绿光带发光峰同时增强,但是R值减小,紫外峰红移.对绿光发光机理研究发现,绿光发光带主要与锌空位、氧间隙（O_i）或锌位氧（O_Zn）等缺陷有关,它是由多个缺陷发光峰组成,各缺陷发光峰强度相对变化导致了绿光发光带的整体移动. 关键词： 1-xMg_xO薄膜')" href="#">Zn_1-xMg_xO薄膜 光致发光 脉冲激光沉积     

Microwave characterization of Pb<Subscript>1−x</Subscript>Ca<Subscript>x</Subscript>Fe<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>O<Subscript>3</Subscript> multiferroics at X-band

The microwave characteristics of Pb_1?x Ca _x Fe_0.5Nb_0.5O₃ multiferroics (x = 0.0, 0.4, 0.45, 0.5, 0.55, 0.6), have been investigated as a function of frequency and substitution. The results depict ?13.99 dB reflection loss at 11.65 GHz in composition x = 0.6. Microwave absorption is enhanced with substitution of Ca²⁺ ions and undoped composition 0.0 behaves as electromagnetic shield. The model governing microwave absorption is discussed and different compositions for electromagnetic applications have been suggested.     

Cluster spin glass and superparamagnetism in RuSr<Subscript>2</Subscript>Eu<Subscript>1.5</Subscript>Ce<Subscript>0.5</Subscript>Cu<Subscript>2</Subscript>O<Subscript>10-</Subscript><Subscript>δ</Subscript>

We investigate in detail the dc magnetization and nonlinear ac susceptibility behavior of the superconducting ferromagnet RuSr₂Eu_1.5Ce_0.5Cu₂O_{10- δ} (Ru1222) to develop a comprehensive understanding of the spin glass and superparamagnetism in this material. The structural properties of the system result in the formation of magnetic (ferromagnetic) clusters of different sizes, shapes and properties. The magnetic clustering of the system leads to observation of various features in dc magnetization and ac susceptibility consistent with superparamagnetism and cluster spin glass states, which can coexist or stand alone, depending on the temperature range considered. Experimental results of magnetic measurements in combination with their analysis have enabled us to explain and distinguish these phenomena, as well as to propose a temperature dependent scenario of the system behavior.     

直接带隙Ge$lt;sub$gt;1-$lt;em$gt;x$lt;/em$gt;$lt;/sub$gt;Sn$lt;sub$gt;$lt;em$gt;x$lt;/em$gt;$lt;/sub$gt;本征载流子浓度研究

通过合金化改性技术, Ge可由间接带隙半导体转变为直接带隙半导体. 改性后的Ge半导体可同时应用于光子器件和电子器件, 极具发展潜力. 基于直接带隙Ge_1-xSn_x半导体合金8带Kronig-Penny模型, 重点研究了其导带有效状态密度、价带有效状态密度及本征载流子浓度, 旨在为直接带隙改性Ge半导体物理的理解及相关器件的研究设计提供有价值的参考. 研究结果表明: 直接带隙Ge_1-xSn_x合金导带有效状态密度随着Sn组分x的增加而明显减小, 价带有效状态密度几乎不随Sn组分变化. 与体Ge半导体相比, 直接带隙Ge_1-xSn_x合金导带有效状态密度、价带有效状态密度分别低两个和一个数量级; 直接带隙Ge_1-xSn_x合金本征载流子浓度随着Sn组分的增加而增加, 比体Ge半导体高一个数量级以上. 关键词： 1-xSn_x')" href="#">Ge_1-xSn_x 直接带隙 本征载流子浓度     

μSR study of Eu<Subscript>0.8</Subscript>Ce<Subscript>0.2</Subscript>Mn<Subscript>2</Subscript>O<Subscript>5</Subscript> and EuMn<Subscript>2</Subscript>O<Subscript>5</Subscript> multiferroics

A comparative μSR study of ceramic samples of the EuMn₂O₅ and Eu_0.8Ce_0.2Mn₂O₅ multiferroics is performed in the temperature range from 15 to 300 K. It is found that the Ce doping of the EuMn₂O₅ sample slightly reduces the temperature of the magnetic phase transition from T _N = 45 K for the EuMn₂O₅ sample to T _N = 42.5 K for the Eu_0.8Ce_0.2Mn₂O₅ sample. Below the temperature T _N for both samples, there are two types of localization of a thermalized muon with different temperature dependences of the precession frequency of the magnetic moment of the muon in an internal magnetic field. The higher frequency in both samples refers to the initial antiferromagnetic matrix. The behavior of this frequency in Eu_0.8Ce_0.2Mn₂O₅ follows the Curie–Weiss law with the exponent β = 0.29 ± 0.02, which differs from the value β = 0.39 standard for 3D Heisenberg magnetics and is observed in EuMn₂O₅, because of the strong frustration of the doped sample. The temperature-independent low frequency is due to the presence of Mn³⁺–Mn⁴⁺ ferromagnetic pairs located along the b axis of the antiferromagnetic matrix and in the regions of phase separation, which contain such ion pairs and e _g electrons recharging them. In both samples, polarization losses are the same (about 20%) and are associated with the formation of Mn⁴⁺–Mn⁴⁺ + Mu complexes near Mn³⁺–Mn⁴⁺ ferromagnetic pairs. In the temperature interval from 25 to 45 K, the separation of the Eu_0.8Ce_0.2Mn₂O₅ structure into two fractions where the relaxation rates of polarization of muons differ by an order of magnitude is revealed. This effect is due to a change in the state of regions of phase separation (1D superlattices) at the indicated temperatures. Such effect in EuMn₂O₅ is significantly weaker.     

Internal friction and magnetoelectric response in two-layer composites Tb<Subscript>0.12</Subscript>Dy<Subscript>0.2</Subscript>Fe<Subscript>0.68</Subscript>–PbZr<Subscript>0.53</Subscript>Ti<Subscript>0.47</Subscript>O<Subscript>3</Subscript>

The inverse magnetoelectric effect and internal friction in two-layer composites based on ferromagnetic Tb_0.12Dy_0.2Fe_0.68 and piezoelectric PbZr_0.53Ti_0.47O₃ are studied in an ac electrical field in the frequency range of 52–213 kHz at temperatures of 293 to 400 K. A correlation is found between the internal friction and the efficiency of the inverse magnetoelectric transformation at resonant frequencies.     

Ca$lt;sub$gt;2$lt;/sub$gt;Si（O$lt;sub$gt;4-$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;N$lt;sub$gt;$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;）：Eu$lt;sup$gt;2+$lt;/sup$gt;绿色荧光粉的制备及其发光性能

利用在Ca-Si-O干凝胶前驱体中添加Si₃N₄的方法于非还原气氛下合成了含N固溶体Ca₂Si（O_4-xN_x）：Eu²⁺绿色荧光粉. 通过X射线衍射仪、扫描电子显微镜以及荧光分光光度计分别分析了产物的物相结构、颗粒形貌和发光性能. 结果显示,Si₃N₄与前驱体的混合物在非还原气氛（纯氮气）下于1100℃焙烧后获得含N固溶体Ca₂Si（O_4-xN_x）：Eu²⁺荧光粉,特别是其中Eu³⁺被还原为Eu²⁺,产物的晶体结构与βup -Ca₂SiO₄相一致. Ca₂Si（O_4-xN_x）：Eu²⁺能够被270–400 nm 范围内的紫外线有效激发,其发射光谱呈宽带发射. 随着N含量的增加,发射峰出现一定程度红移（501–504 nm）,而且发光强度显著提高. 当Eu²⁺浓度为0.25 mol%时发光强度达最大值,浓度超过0.25 mol%时,发光强度显著降低,出现浓度猝灭 效应. 关键词： 白光LED 荧光粉 溶胶凝胶法 3N₄')" href="#">Si₃N₄     

High-Temperature Heat Capacity of Zn<Subscript>2</Subscript>V<Subscript>2</Subscript>O<Subscript>7</Subscript>–Cu<Subscript>2</Subscript>V<Subscript>2</Subscript>O<Subscript>7</Subscript> Solid Solutions

Differential scanning calorimetry has been used to study the influence of temperature on the heat capacity of synthesized vanadates Zn₂V₂O₇, (Cu_0.56Zn_1.44)V₂O₇, and (Cu_1.0Zn_1.0)V₂O₇. It is found that dependences C_p = f(T) have extremes. The thermodynamic properties of Zn₂V₂O₇ have been determined.     

Superconductivity in Sr<Subscript>0.75</Subscript>Y<Subscript>0.75</Subscript>Ba<Subscript>1.5</Subscript>Cu<Subscript>3</Subscript> O<Subscript>7−<Emphasis Type="Italic">d</Emphasis></Subscript> compounds

The effect of simultaneous Sr substitution at the Ba and Y sites has been studied in the Sr_0.75Y_0.75Ba_1.5Cu₃O_7–dsystem. Attempts to replace 25% Y and 25% Ba have been successful and superconductivity was observed above 78 K for Sr_0.75Y_0.75Ba_1.5Cu₃O_7–d compound with high oxygen content, i.e., O_6.76, and having orthorhombic crystal symmetry. The compound was treated in argon gas at 800°C to reduce the oxygen content and to induce some structural changes. The Sr_0.75Y_0.75Ba_1.5Cu₃O_6.1 compound thus obtained has tetragonal symmetry and low oxygen content, O_6.1. It has also shown superconductivity at 28 K. The paper presents a careful comparison of the structural and electrical properties and infrared absorbance spectra of the two compounds with the same metallic composition, Sr_0.75Y_0.75Ba_1.5Cu₃, but with different oxygen content and crystal symmetry. The study clearly establishes the occurrence of superconductivity in tetragonal Sr-substituted (both at Y and Ba sites in) YBCO.     

营造&#183;感悟&#183;探究&#183;应用

笔者有幸观摩了一堂第七届全国中学物理青年教师教学大赛录像课——由天津市南开中学贾双老师执教的“自由落体运动”,感受颇多．这是一堂在新课程理念下有意义、有效率、有生成性且非常精彩的课．现重现最精彩的教学片段．     

Hyperfine Interactions in Pb<Superscript>3+</Superscript>F<Stack><Subscript>8</Subscript><Superscript>−</Superscript></Stack>F<Stack><Subscript>a</Subscript><Superscript>−</Superscript></Stack> clusters in fluorite crystals

The parameters of hyperfine interactions in Pb³⁺F ₈ ^? F _a ^? tetragonal clusters of MeF₂ crystals (Me=Ca, Sr, Ba) are interpreted. The contributions of the spin polarization to the parameters of the proper hyperfine interaction and additional (ligand) hyperfine interactions are calculated in the approximation of weak binding between a charge-compensating ion F _a ^? and a cubic fragment in the tetragonal cluster. It is demonstrated that correct inclusion of the contributions from the spin polarization to the ligand isotropic hyperfine interaction for the F _a ^? ion leads to anomalously large parameters of this interaction for MeF₂ crystals. These results are in agreement with experimental data.     

Electrical switching in the MoO<Subscript>3</Subscript>–WO<Subscript>3</Subscript>–P<Subscript>2</Subscript>O<Subscript>5</Subscript> and MoO<Subscript>3</Subscript>–P<Subscript>2</Subscript>O<Subscript>5</Subscript> glasses

High field electrical switching on blown films of MoO₃(60%)–P₂O₅(40%), MoO₃(50%)–WO₃(10%)–P₂O₅(40%), and MoO₃(45%)–WO₃(15%)–P₂O₅(40%) having different thicknesses was studied and compared. Switching was observed using two terminal samples. S-type current–voltage characteristic (current-controlled negative resistance—CCNR) with memory was observed in molybdenum–phosphate glasses, but N-type characteristic (voltage-controlled negative resistance—VCNR) with threshold in tungsten–molybdenum–phosphate glasses was observed. The important observation was that with the addition of WO₃ to binary MoO₃–P₂O5 led to a change of I–V characteristic from CCNR with memory to VCNR with threshold. The measurements of density and molar volume showed linear relation between MoO₃ content and density which decreased with the increase of MoO₃ content. The samples’ thickness had no significant effect on threshold voltage. The attained results also indicated that the electrode material had no effect on switching property of devices. The switching behavior of the devices did not show any dependence on the polarity of the applied voltage. In terms of the effect of heat on the switching behavior of molybdenum–phosphate glasses, it was found that threshold voltage decreases with increasing of temperature. Finally, the switching phenomenon was explained by thermal (formation of crystalline filaments) and electronic models.     

Nernst effect of stripe ordering La<Subscript>1.8−x</Subscript>Eu<Subscript>0.2</Subscript>Sr<Subscript>x</Subscript>CuO<Subscript>4</Subscript>

We investigate the transport properties of La_1.8−xEu_0.2Sr_xCuO₄ (x = 0.04, 0.08, 0.125, 0.15, 0.2) with a special focus on the Nernst effect in the normal state. Various anomalous features are present in the data. For x = 0.125 and 0.15 a kink-like anomaly is present in the vicinity of the onset of charge stripe order in the LTT phase, suggestive of enhanced positive quasiparticle Nernst response in the stripe ordered phase. At higher temperature, all doping levels except x = 0.2 exhibit a further kink anomaly in the LTO phase which cannot unambiguously be related to stripe order. Moreover, a direct comparison between the Nernst coefficients of stripe ordering La_1.8−xEu_0.2Sr_xCuO₄ and superconducting La_2−xSr_xCuO₄ at the doping levels x = 0.125 and x = 0.15 reveals only weak differences. Our findings make high demands on any scenario interpreting the Nernst response in hole-doped cuprates.     

Potential energy of <Superscript>∞</Superscript>H<Stack><Subscript>2</Subscript><Superscript>-</Superscript></Stack>(<Superscript>2</Superscript>∑<Stack><Subscript>u</Subscript><Superscript>+</Superscript></Stack> in the bound-state region

An accurate calculation of the lowest negative electronic state of H ₂ ^- (fixed nuclei) is reported using the CCSD(T) method and doubly augmented cc-pv5z basis set. Comparison has been made with the reference data by Senekowitsch et al. [Chem. Phys. Lett. 111 (1984) 211]. Owing to larger size of the basisset and inclusion of triple excitations, no vertical shift in this work is necessary to reproduce the asymptotics of H + H ^-. In addition, the effect of basis-set truncation is estimated, based on the complete-basis-set extrapolation method. The contribution of correlated electron-proton motion to the electron-energy curve for H₂ ^– dynamics is pointed out.Dedicated to Prof. Jií Horáek on the occasion of his 60th birthday.     

Co掺杂对Mn$lt;sub$gt;3$lt;/sub$gt;Sn$lt;sub$gt;1-$lt;em$gt;x$lt;/em$gt;$lt;/sub$gt;Co$lt;sub$gt;$lt;em$gt;x$lt;/em$gt;$lt;/sub$gt;C$lt;sub$gt;1.1$lt;/sub$gt;化合物的磁性质、熵变以及磁卡效应的影响

利用固态反应法制备了Mn₃Sn_1-xCo_xC_1.1 （x=0.05,0.1,0.2） 系列化合物,研究了Co掺杂对其磁性质、相变、熵变的影响. 随着Co掺杂量的增加,样品的居里温度由283 K先降到212 K （Mn₃Sn_0.9Co_0.1C_1.1） 后又升到332 K （Mn₃Sn_0.2Co_0.8C_1.1）,相变类型由一级相变逐渐转变为二级相变. 增大Co的掺杂量,Mn₃Sn_1-xCo_xC_1.1化合物的熵变峰值逐渐减小,磁熵变温区由9 K展宽到300 K. 当Co掺杂量为0.2时,相对制冷量达到最高,为103 J/kg （磁场强度为1.6 MA/m）. 由于室温附近良好的磁致冷效应,该类材料在磁制冷领域可能具有重要的应用前景. 关键词： 磁性质 相变 磁卡效应 相对制冷量     

Transport properties in La<Subscript>0.7−<Emphasis Type="Italic">x</Emphasis></Subscript>Gd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> system

The influence of Gd doping at La-site on the electrical transport properties and the colossal magnetoresistance of La_0.7−x Gd _x Sr_0.3MnO₃ (x=0.00, 0.10, 0.15, 0.20, 0.30, 0.40, 0.50, 0.60, and 0.70) is studied. The experimental results indicate that the transport properties exhibit abnormal behavior under high doping condition. Forx=0.50, we find that a transition from metal to insulator occurs after the occurrence of insulator-metal transition nearT _c, which seldom occurs in ABO₃ structure. For samplesx=0.60 and 0.70, it exhibits insulator behavior far aboveT _c. These abnormal behaviors are attributed to different magnetic background, i.e. the system undergoes a transition from long range ferromagnetic order to the cluster-spin glass state and further to antiferromagnetic order.     

Large electrostrictive strain in lead-free Bi<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>–BaTiO<Subscript>3</Subscript>–KNbO<Subscript>3</Subscript> ceramics

In the present work, (1−x)(0.935Bi_0.5Na_0.5TiO₃–0.065BaTiO₃)–xKNbO₃ (BNT–BT–KN, BNT–BT–100xKN) ceramics with x ranging from 0 to 0.1 were prepared by the conventional ceramic fabrication process. A large electrostrictive coefficient of ∼10⁻² m⁴ C⁻² is obtained with the composition x ranging from 0.02 to 0.1, which is close to the well-known electrostrictive material Pb(Mg_1/3Nb_2/3)O₃. Under an electric field of 4 kV/mm, the electrostrictive strain can reach as high as 0.08%. Besides, the electric field induced strain behavior indicates a temperature independent behavior within the temperature range of 20 to 150°C. The large electrostrictive strain is suggested to be ascribed to the formation of non-polar (NP) phase developed by the KNbO₃ substitution, and the high electrostrictive coefficient of BNT–BT–KN ceramics makes them great candidates to be applied in the new solid-state actuators.