Al(111)/Al_3Li(111)的界面性质

运用基于第一性原理的平面波贋势法,计算研究了Al (111)/Al_3Li (111)的界面性质.结果表明:Al (111)/Al_3Li (111)的界面具有三种原子配位关系结构,其中界面处仍保持与基体Al一致的三明治堆垛构型的界面稳定性最好.计算表明,该结构界面最薄弱层,位于Al_3Li (111)内,其分离功最小(约1.53 J/m~2),强度最弱,而基体Al和Al_3Li内部的强度随着到界面距离的增大而逐渐增强.     

锰原子的二步多光子与三步三光子共振电离研究

激光共振电离技术是痕量分析中的重要手段之一。文章以速率方程理论为基础,对锰原子的激光共振电离过程进行了分析,讨论了电离过程中各级激发光功率密度及激光作用时间对电离效率的影响;提出了根据所要求的电离效率和激光作用时间计算所需要的各激发光或电离激光的功率密度的方法;得到了饱和激发或饱和电离的规律及阈值条件。研究发现,在激光作用时间为10 ns时,锰原子饱和电离的激光强度阈值基本都在108 W·cm-2的量级,只有“1+1”双色双共振低三个量级;而“1+1”和“1+1+1”饱和激发的激光强度阈值则在102～103 W·cm-2量级;并且随着激光作用时间的增加,各过程的饱和激发和饱和电离的激光强度阈值将单调减少。     

Structure of the laser annealed Si(1 1 1)-(1 × 1) surface

LEED analysis of the laser annealed Si(1 1 1)-(1 × 1) surface shows that a model with a graphite-like top double layer of atoms with a spacing of 2.95±0.02 Å from the second double layer describes the LEED data as well as the Zehner model, but involves large displacements of the atoms normal to the surface as required by ion scattering results. It is suggested that this model provides a natural interpretation of the low energy He atom scattering data for the Si(1 1 1)-(7 × 7) surface.     

Comparing the band structure of Ag(1 1 1) monolayers on Ni(1 1 1) and Ni (0 0 1)

Ag(1 1 1) monolayers prepared on two substrates, Ni(1 1 1) and Ni(0 0 1), were studied with angle-resolved photoemission; their two-dimensional band dispersions were found to be identical within experimental uncertainties. Comparing the present results with those for Ag/Cu(0 0 1), the major difference is just a shift of 0.32 eV in all the binding energies. Thus the band topology of Ag overlayers in these systems is quite insensitive to the electronic and atomic structures of the substrates.     

Growth of epitaxial thin Pd(1 1 1) films on Pt(1 1 1) and oxygen-terminated FeO(1 1 1) surfaces

Thin Pd films (1-10 monolayers, ML) were deposited at 35 K on a Pt(1 1 1) single crystal and on an oxygen-terminated FeO(1 1 1) monolayer supported on Pt(1 1 1). Low energy electron diffraction, Auger electron spectroscopy, and Kr and CO temperature programmed desorption techniques were used to investigate the annealing induced changes in the film surface morphology. For growth on Pt(1 1 1), the films order upon annealing to 500 K and form epitaxial Pd(1 1 1). Further annealing above 900 K results in Pd diffusion into the Pt(1 1 1) bulk and Pt-Pd alloy formation. Chemisorption of CO shows that even the first ordered monolayer of Pd on Pt(1 1 1) has adsorption properties identical to bulk Pd(1 1 1). Similar experiments conducted on FeO(1 1 1) indicate that 500 K annealing of a 10 ML thick Pd deposit also yields ordered Pd(1 1 1). In contrast, annealing of 1 and 3 ML thick Pd films did not result in formation of continuous Pd(1 1 1). We speculate that for these thinner films Pd diffuses underneath the FeO(1 1 1).     

Schottky barriers on diamond (1 1 1)

We have measured Schottky barrier heights Ø_B = 1.3 eV for Au and Ø_B = 1.5 eV for Al on (p-type) diamond(1 1 1)?(1 × 1) using photoelectron spectroscopy with synchroton radiation. These barrier heights yield a barrier index of S = 0.2, which is closer to the values for Si and Ge (S ～ 0.1) than to the value S = 0.4 calculated for jellium on an ideal diamond(1 1 1) surface. After reacting Al with the diamond surface by annealing to 800° C, we find that Ø_B decreases by 0.24 to 1.25 eV.     

Hanle lifetime measurements of SrI 1P1 and CaI 1P1 levels excited by a neutral beam of 1 1S0 helium atoms

A 0.8 keV He(1 ¹S₀) beam was used to coherently excite the ¹P₁ levels of Sr and Ca targets. The coherence appears as an alignment of the excited state with respect to the beam axis. We report here the results of a Hanle measurement, or a zero-field level-crossing experiment, performed on these coherently excited levels. The radiative lifetimes of the SrI ¹P₁ and CaI ¹P₁ levels were measured to be 4.7 ns and 5.3 ns, respectively. These values are in good agreement with conventional Hanle measurements.     

A SOLVABLE 1+1-DIMENSIONAL U(1) GAUGE THEORY

A 1+1-dimensional U(1+1) gauge theory is proposed and the exact solution of its spectrum and corresponding energy eigenstates is found.     

Commensurate ordering of iron phthalocyanine on Ag(1 1 1) surface

Epitaxial growth of iron phthalocyanine on a silver (1 1 1) surface has been studied with scanning tunneling microscopy in ultrahigh vacuum. While several structures were observed, this report concentrates on what appeared to be the most stable phase. This phase has commensurate two-dimensional ordering with oblique unit vectors (b₁, b₂) where b₁ = 5a₁ + 2a₂ and b₂ = 5a₂, where a₁ and a₂ are unit vectors of Ag(1 1 1) surface. The rotation angle of iron phthalocyanine relative to the silver [1 0 ] direction was determined to be 16.63° from the high-resolution image analysis. The oblique structure is more commensurate than that of iron phthalocyanine on graphite and of copper phthalocyanine on the Ag(1 1 1) surface. The observed FePc on Ag(1 1 1) structure is similar to that of FePc on Au(1 1 1), but has significantly higher surface density. Bias dependence of the images was observed and is consistent with the expected small HOMO–LUMO gap.     

Schwinger terms in 1+1 dimensions

Two different approaches — Källen’s and Brandt’s methods — for calculation of the Schwinger terms in the 1+1 dimensional Abelian and non-Abelian free current algebras are discussed. These methods are applied to calculation of the single and double commutators. The validity of the Jacobi identities is examined in 1+1 and 3+1 dimensions and in this way is given natural restriction on the regularization. It is shown that the Jacobi identity cannot be broken in 1+1 dimensions even using the regularization which fails in the 3+1 dimensional case. A connection between the Schwinger term and anomaly is shown in the simplest case of the Schwinger model.     

1+1维和2+1维空间上定向聚合问题的数值研究

对1+1和2+1维空间上定向聚合问题的数值模拟结果显示,任意有限温度下的横向涨落和自由能涨落在聚合尺度t较大时都将趋于零温度时强耦合下的结果:Δx∝t^ν和ΔF∝t^ω(d=1+1时,ν=2/3,ω=1/3;d=2+1时,ν≈0.6,ω≈0.2).有限温度下,由于1+1维和2+1维空间上的比热C(T,t)∝t和1+1维空间上的熵涨落ΔS∝t^1/2,1+1维空间上的系综能量涨落和内能涨落以及2+1维空间上的系综能量涨落均趋于t^1/2而远强于自由能涨落.在2+1维空间上,定向聚合问题有发生相变的迹象:当熵涨落达到其最大值时,单位聚合尺度的熵涨落和内能涨落在聚合尺度t→∞时,可能会由低温下趋于有限值(零温度除外)转变为高温下趋于零 关键词： 定向聚合 表面生长现象 Kardar-Parisi-Zhang方程     

Comparison of sulfur interaction with hydrogen on Pt(1 1 1), Ni(1 1 1) and Pt3Ni(1 1 1) surfaces: The effect of intermetallic bonding

Adsorption strengths of hydrogen and sulfur both individually and together as co-adsorbates were investigated on Pt(1 1 1), Ni(1 1 1) and Pt₃Ni(1 1 1) surfaces using density functional theory in order to determine the effect of metal alloying on sulfur tolerance. The adsorption strengths of H and S singly follow the same trend: Ni(1 1 1) > Pt(1 1 1) > Pt₃Ni(1 1 1), which correlates well with the respective d-band center positions of each surface. We find that the main effect of alloying is to distort both the sub-layer structure and the Pt overlayer resulting in a lowered d-band. For all three surfaces, the d-band shifts downward non-linearly as a function of S coverage. Nearly identical decreases in d-band position were calculated for each surface, leading to an expectation that subsequent adsorption of H would scale with surface type similarly to single species adsorption. In contradiction to this expectation, there was no clearly discernable difference between the energies of coadsorbed H on Pt(1 1 1) and Ni(1 1 1) and only a slightly lowered energy on Pt₃Ni(1 1 1). This provides evidence that coadsorbed species in close proximity interact directly through itinerant mobile electrons and through electrostatic repulsion rather than solely through the electronic structure of the surface. The combination of the lowered d-band position (arising from distorted geometry) and direct co-adsorbate interactions on Pt₃Ni(1 1 1) leads to a lower energy barrier for H₂S formation on the surface compared to pure Pt(1 1 1). Thus, alloying Pt with Ni both decreases the likelihood of S adsorption and favors S removal through H₂S formation.     

Precise semiconductor nanotubes and nanoshells fabricated on (1 1 0) and (1 1 1) Si and GaAs

In our previous works, we showed that ultrathin epitaxial heterofilms (down to two monolayers for the case of InGaAs/GaAs) can be controllably detatched from substrates and rolled, under the action of internal stresses, into various cylindrical micro- and nanoshells (tubes, scrolls, rings, spirals, etc.). The present review outlines the cornerstone stages in the development of this fabrication technology for semiconductor and metal nanoobjects, including: (1) directional rolling of films yielding 3D micro- and nanoshells of various shapes; (2) assembling of micro- and nanoshells in more complex architectures; (3) super-critical drying of nanoshells, and (4) formation of nanoshells whose sizes can be precisely controlled in three dimensions.With this technology new possibilities that open up for the use of strained films, selectively, grown on uncommonly used (1 1 0) and (1 1 1) surfaces, are presented. The role of mechanical anisotropy in the formation of the 3D nanoshells and the electrical and mechanical properties of formed nanotubes are discussed.     

A Quantum Monte Carlo Study on Mixed-Spin Chains of 1/2-1/2-1-1 and 3/2-3/2 -1-1

The ground-state and thermodynamic properties of quantum mixed-spin chains of1/2-1/2-1-1and 3/2-3/2-1-1are investigated by a quantum Monte Carlo simulation with the loop-cluster algorithm. For 1/2-1/2-1-1 chain, we find it has two phases separated by an energy-gap vanishing point in the ground-state. For 3/2-3/2-1-1 chain, the numerical results show two energy-gap vanishing points isolated by different phases in its ground-state. Our calculations indicate that all these ground state phases can be understood by means of valence-bond-solid picture, and the thermodynamic behavior at finite temperatures is continuous as a function of parameterα=J2/J1.     

A Quantum Monte Carlo Study on Mixed-Spin Chains of 1／2-1／2-1-1 and 3／2-3／2-1-1

The ground-state and thermodynamic properties of quantum mixed-spin chains of 1/2-1/2-1-1 and 3/2-3/2-1-1 are investigated by a quantum Monte Carlo simulation with the loop-cluster algorithm. For 1/2-1/2-1-1 chain, we find it hastwo phases separated by an energy-gap vanishing point in the ground-state. For 3/2-3/2-1-1 chain,the numerical results show two energy-gap vanishing points isolated by different phases in its ground-state. Our calculations indicate that all these ground state phases can be understood by means of valence-bond-solid picture, and the thermodynamic behavior at finite temperatures is continuous as a function of parameter α=J2/J1.     

Relativistic one-step photoemission calculations for Pt(1 1 1)

A fully relativistic one-step theory of photoemission has been applied to normal emission from Pt(1 1 1) induced by circularly polarized ultraviolet radiation. The calculated spin polarization and intensity spectra are in quantitative agreement with experimental data. Individual features are identified as bulk interband transitions and one-dimensional density of state involving initial states of specified symmetries.     

InAs/GaAs (1 1 1)A heteroepitaxial systems

We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (1 1 1)A substrates by molecular beam epitaxy. In contrast to conventionally used (0 0 1) surfaces, where Stranski–Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.     

Highly stable passivation of a Si(1 1 1) surface using bilayer-GaSe

As a stable and ‘epitaxial’ passivation of a Si surface, we propose the bilayer-GaSe termination of a Si(1 1 1) surface. This surface is fabricated by depositing one monolayer of Ga on a clean Si(1 1 1) surface and subsequent annealing in a Se flux at around 520 °C, which results in unreconstructed 1×1 termination of the Si(1 1 1) surface by bilayer-GaSe. We found by scanning tunneling microscopy observation that slow cooling of the clean Si(1 1 1) surface from 850 to 520 °C with simultaneous deposition of a Ga flux results in better termination of the Si(1 1 1) surface. It was also found that this surface is stable against heating around 400 °C in O₂ atmosphere of 3×10⁻³ Pa. By utilizing these properties of the bilayer-GaSe terminated surface, we have succeeded in fabricating ZnO quantum dots on this substrate.     

Diffusions of small clusters on Pt(1 1 1) and Cu(1 1 1) surfaces

Diffusions of small cluster Pt₆ on Pt(1 1 1) surface and Cu₆ on Cu(1 1 1) are studied by molecular dynamics simulation, respectively. The atomic interaction is modeled by the semiempirical potential. The results show that the diffusion processes in the two systems are far different. For example, on Pt(1 1 1) surface, the hopping of single atom and the shearing of two atoms of hexamer only occur on the adatom(s) adsorbed at B-step, while on Cu(1 1 1) surface they can appear on the adatom(s) either at A-step or B-step. To the concerted translation of the parallelogram hexamer, the anisotropy in the diffusion path is observed in the two systems, the mechanisms and then the preferential paths, however, are completely different. The reasons for these diffusion characteristics and differences are discussed.     

CO oxidation on Pd(1 1 1), Pt(1 1 1), and Rh(1 1 1) surfaces studied by infrared chemiluminescence spectroscopy

The infrared (IR) chemiluminescence studies of CO₂ formed during steady-state CO oxidation over Pd(1 1 1), Pt(1 1 1), and Rh(1 1 1) surfaces were carried out. Analysis of their emission spectra indicates that the order of the average vibrational temperature () values of CO₂ formed during CO oxidation was as follows: Pd(1 1 1) > Pt(1 1 1) > Rh(1 1 1), and the order is coincident with the potential energy in the transition state expected by the theoretical calculations. Furthermore, it is suggested that the bending vibrational temperature () can also be influenced by the angle of O-C-O (∠_OCO) of the activated complex in the transition state, which has also been proposed by the theoretical calculations.