Optical Heterodyne Impulse-Response Measurement of Lithium Tantalate Phase Modulator Driven by Wideband Frequency Signal

In this paper, we describe a novel optical heterodyne interferometer for characterizing phase modulation systems including a lithium tantalate phase modulator. A wideband random signal is imposed on the modulator so that the resultant beat photocurrent is modulated in phase at random. The cross-power spectrum of the fluctuating phase with the wideband random signal driving the modulator is computed to give the transfer function and the impulse response of the phase modulation system. The frequency and time response of the phase modulation are measured up to 15 MHz in a practical experiment.     

Evaluation of the decay in temporal coherence of a laser beam propagating in a slowly fluctuating medium

A simple method is described for evaluating the change in temporal coherence which occurs when a monochromatic light wave traverses a medium the properties of which fluctuate randomly. The degree of second-order coherence is formulated in terms of the amplitude and phase autocorrelation functions which are derived from the photocurrent produced in a light beating experiment. This method makes it possible to evaluate even a small deterioration in temporal coherence which is closely related to the frequency fluctuations in the light wave. The change in temporal coherence of a laser beam propagating through a slowly fluctuating gaseous path has been measured.     

Circular photocurrent in Ag/Pd resistive films upon excitation by femtosecond laser pulses

This paper presents the results of the experimental investigation of the generation of nanosecond photocurrent pulses in silver–palladium (Ag/Pd) resistive films under excitation by laser pulses with a duration of 120 fs at a wavelength of 795 nm. The photocurrent was detected in the direction perpendicular to the plane of incidence of the laser beam on the film. The 20-μm-thick films under investigation were a porous polycrystalline material consisting predominantly of nanocrystallites of the palladium oxide PdO and the Ag–Pd solid solution. The direction of the photocurrent observed in the films depends on the sign of the circular polarization of the incident radiation. It was found that the observed photocurrent depends on the angle of incidence in accordance with the odd law and consists of the circular and linear contributions, which are dependent on and independent of the sign of the circular polarization, respectively. It was shown that the circular photocurrent is significantly higher than the linear photocurrent. It was established that, for both the circular and linear polarizations, the photocurrent is directly proportional to the power of the excitation radiation. For the linearly polarized laser radiation, the photocurrent depends on the polarization angle in accordance with the odd law. The regularities revealed are consistent with the mechanism of the generation of transverse photocurrent with the photon drag effect.     

单壁碳纳米管薄膜光电器件研究

制备了单壁碳纳米管薄膜光电器件,在偏压和激光器照射条件下可产生净光电流。分别研究了偏置电压、激光功率、照射位置对净光电流的影响。实验表明,激光照射薄膜中点,净光电流随着偏压的增大而增大,随激光功率的增大而趋于饱和,偏压为0.2 V,激光功率为22.7 mW时,净光电流达到0.24 μA;无偏压,激光照射薄膜不同位置时,净光电流值关于器件中心对称分布,照射两端点输出最大光电流,照射中点输出趋于“0”。经分析,在偏压和激光照射薄膜中心位置的条件下,器件因内光电效应可产生净光电流;在无偏压和激光照射的条件下,因光热电效应可产生净光电流,并建立了温度模型,根据单壁碳纳米管的热电势特性推导出了净光电流与光照位置的关系,其符合实验结果;内光电和光热电效应是光电流产生、变化的原因,在偏压和激光照射的一般条件下,净光电流应是两种效应的叠加结果。器件所具有的光电特性使其在光伏器件、光传感器有应用的潜力。     

Ultrafast photocurrent measurement of the escape time of electrons and holes from carbon nanotube p-i-n photodiodes

Ultrafast photocurrent measurements are performed on individual carbon nanotube p-i-n photodiodes. The photocurrent response to subpicosecond pulses separated by a variable time delay Δt shows strong photocurrent suppression when two pulses overlap (Δt=0). The picosecond-scale decay time of photocurrent suppression scales inversely with the applied bias V(SD), and is twice as long for photon energy above the second subband E22 as compared to lower energy. The observed photocurrent behavior is well described by an escape time model that accounts for carrier effective mass.     

On the photon-drag effect of photocurrent of surface states of topological insulators

The photocurrent of surface states of topological insulator due to photon-drag effect is computed, being based on pure Dirac model of surface states. The scattering by disorder is taken into account to provide a relaxation mechanism for the photocurrent. The Keldysh–Schwinger formalism has been employed for the systematic calculation of photocurrent. The helicity dependent photocurrent of sizable magnitude transverse to the in-plane photon momentum is found, which is consistent with experimental data. Other helicity independent photocurrents with various polarization states are also calculated.     

Evolution of Photocurrent during Coadsorption of Cs and O on GaAs （100）

The photocurrent and spectral response characteristics of gallium arsenide （GaAs） are obtained by a multiinformation measurement system, and the evolution of the photocurrent versus the Cs：O flux ratio is investigated. The experimental results show that the photocurrent increases approximately exponentially after the first exposure to Cs until a maximum sensitivity is reached, the detailed evolution process and the ultimate photocurrent are different for different samples. These differences are analysed, and according to the process of coadsorption of Cs and oxygen on GaAs, an equation is presented to explain the increase of photocurrent.     

High-speed scanning photocurrent imaging techniques on nanoscale devices

We report the characterization of individual carbon nanotube and Si nanowire field-effect transistors through high-speed scanning photocurrent microscopy with a scanning speed of 1 frame/s and a photocurrent sensitivity of less than 1 pA. This enables us to record photocurrent images that are free from hysteresis effects that modify the field configurations applied by the gate bias voltage. We can clearly resolve the photocurrent signals with polarity inversion near the metallic contacts under gate bias conditions which cause severe hysteresis effects in the nanowire devices. We also studied the dynamics of the hysteresis effects for different gate bias configurations. This high-speed photocurrent imaging technique is particularly useful for obtaining two-dimensional, localized optoelectronic characteristics and their correlation with overall device performance without encountering undesired dynamic responses.     

Thin-film capacitor M/Pb(ZrTi)O3/M as a polarization-sensitive photocell

A steady-state short-circuit photocurrent of preliminarily polarized submicron capacitors with a polycrystalline Pb(ZrTi)O₃ (PZT) film is investigated under irradiation by light with a wavelength λ > 0.4 μm. The structures with different M/PZT interfaces that differ in the leakage current by more than an order of magnitude are found to demonstrate virtually the same value of the photocurrent, which is always directed opposite to the ferroelectric polarization of the PZT film. Although the magnitude of photocurrent is determined by the degree of polarization of the film, the observed photocurrent is not a depolarization current of the ferroelectric film. Therefore, the M/PZT/M capacitor behaves like a polarization-sensitive photocell. Within the proposed theory of a heterophase medium, the dependence of the photocurrent on the magnitude of the preliminary polarization is calculated and proves to be in reasonable agreement with the experimental results.

     

Über die Photoleitung von Anthrazen

The dependence of the photocurrent on voltage, light intensity and electrode separation and also the decay-time of the photocurrent is measured. All these measurements are largely influenced by the electrode material. The results obtained with Cu I- and Al-electrodes and also with insulating electrodes are given and the different behavior is discussed by means of a model. Hereby conclusions are made about the mean ranges and the mobility of the holes which are mainly responsible for the photocurrent.     

Influence of a Time-Dependent Applied Electric Field on the Photocurrent in Photorefractive Materials

From the differential material rate equations, we found an additional term to the usual expression of the photocurrent, which appears only when a time-dependent external electric field is applied. This term influences the photocurrent in the material. We applied our equations to a Bi₁₂SiO₂₀ sample, under an applied sinusoidal electric field. This sample is illuminated with an oscillating interference pattern formed by two plane light waves, one of which is phase-modulated with frequency ω. We found good agreement with experimental results. Besides, for this case, our prediction for the photocurrent is better than the usual prediction of the photocurrent for low values of ω.     

光强一定时饱和光电流随入射光频率的变化关系辨析

对光电效应实验中饱和光电流随入射光频率变化关系的几种谬误进行了辨析，给出了光强一定时饱和光电流随入射光频率变化的正确规律并作了解释。     

Bidirectional photocurrent of holes in layers of Ge/Si quantum dots

Spectra of the photocurrent of holes in δ-doped Si layers with Ge quantum dots in weak external electric fields have been studied. It has been established that the photocurrent of the holes in the photovoltaic mode changes its sign with the increase in the impurity concentration in the δ layers. It has been found that there is a voltage range in the vicinity of the zero bias in which the direction of the photocurrent is determined by the wavelength of the exciting radiation.     

Specific features of photo-and electrical conduction in manganese germanium garnets

The specific features of photo-and electrical conduction in manganese germanium garnet crystals are investigated in the temperature range 4.2–370 K for the first time. Under exposure of samples with ohmic contacts to visible light, the photocurrent in these samples is observed only at high temperatures. The characteristic times of the photocurrent rise differ from those of photocurrent relaxation after the light is switched off. The inference is made that the photo-and electrical conduction is determined by the electrical recharging of manganese ions. The generation and transport of charge carriers are controlled by centers with electrical inhomogeneities and shallow attachment levels.     

Anisotropy of photocurrent for two-photon absorption photodetector made of hemispherical silicon with $(\overline{1}10)$ plane

We fabricated a hemispherical nearly-intrinsic Si-based photodetector with ( plane. The photocurrent generated from the detector under a continuous wave laser at the wavelength of 1.3 μm was observed. The photocurrent shows a quadratic dependence on the incident optical power. The dependence of the photocurrent on the azimuth of the incident optical field is consistent with the anisotropy of the two-photon absorption in Si crystals. The ratio of the two nonzero independent components of the third-order susceptibility of silicon is obtained to be 0.42 from the observed result of the anisotropy of the photocurrent.     

Characterisation of the influence of multi-quantum barrier reflectors within GaInP/AlGaInP quantum well lasers using near-field imaging techniques

Using a near-field scanning optical microscope, near-field photocurrent and topographic imaging has measured the effect on intrinsic electric fields and photocurrent propagation resulting from inserting multi-quantum barrier (MQB) super-lattices into quantum well lasers. Measurements on devices at two different excitation wavelengths have highlighted the sensitivity of the near-field optical technique. Strong correlations were seen in the photocurrent response of the multi-quantum barrier regions when compared with simulations made on the electric field generated within the structure. As a result, photocurrent attenuation was attributed to carrier confinement in these barrier regions when compared to a control sample. The measurements illustrate the effectiveness of the MQB, in addition to the sensitivity and power of the near-field photocurrent technique.     

MEH-PPV/CdSe纳米复合器件的光电导特性的研究

以CdO和Se粉作为前驱物,在TOPO/TOP有机体系中制备了CdSe纳米晶,将其与聚合物MEH-PPV复合制备了复合光电导器件,研究了它的光电导特性,并将其与单层MEH-PPV光电导器件的特性进行了比较。结果发现纳米复合光电导器件的光电流响应光谱的2个峰的位置基本上与MEH-PPV和CdSe纳米晶的吸收峰的位置相对应,这说明CdSe纳米晶和聚合物MEH-PPV的吸收对光电流都有贡献,主要是由于CdSe纳米晶和MEH-PPV界面处的激子离化和电荷转移造成的。而且复合器件的光电流较单层有所增强,且MEH-PPV器件光谱的响应范围更宽。     

光电效应实验中阳极光电流的测量

分析了光电效应实验中阳极光电流和阴极光电流的形成机理.探索了二者之间的关系.阳极光电流值的K倍与阴极光电流值关于原点对称,因此当K足够大时,用电压大于0时的实测电流值代替阴极光电流值,可以求得电压小于0时的阳极光电流值.     

Enhanced photogalvanic effect in the two-dimensional MgCl2/ZnBr2 vertical heterojunction by inhomogenous tensile stress

The photogalvanic effect (PGE) occurring in noncentrosymmetric materials enables the generation of a dc photocurrent at zero bias with a high polarization sensitivity, which makes it very attractive in photodetection. However, the magnitude of the PGE photocurrent is usually small, leading to a low photoresponsivity, and therefore hampers its practical application in photodetection. Here, we propose an approach to largely enhancing the PGE photocurrent by applying an inhomogenous mechanical stretch, based on quantum transport simulations. We model a two-dimensional photodetector consisting of the wide-bandgap MgCl₂/ZnBr₂ vertical van der Waals heterojunction with the noncentrosymmetric C_3v symmetry. Polarization-sensitive PGE photocurrent is generated under the vertical illumination of linearly polarized light. By applying inhomogenous mechanical stretch on the lattice, the photocurrent can be largely increased by up to 3 orders of magnitude due to the significantly increased device asymmetry. Our results propose an effective way to enhance the PGE by inhomogenous mechanical strain, showing the potential of the MgCl₂/ZnBr₂ vertical heterojunction in the low-power UV photodetection.