基于反饱和吸收和自聚焦两种效应的光限幅器

用酞菁铜金属有机染料首次演示了基于反饱和吸收和自聚焦两种效应的光限幅器．实验和理论分析表明，这种限幅器的输入阈值功率由反饱和吸收决定，而自聚焦使限幅器的最大限幅输出功率降低，限幅效果显著增强．     

酞菁铜LB薄膜复合光波导的高速双稳特性

对以有机材料酞菁铜的LB薄膜作覆盖层的K~+离子交换玻璃光波导,进行了高速光学双稳特性研究.利用比较波导的输入和输出光脉冲形状法,在532nm光波长得到开关时间为24ps的高速光学双稳特性.     

有机材料ZnTBP-CA-PhR的非线性吸收和光学限幅性能

报道了一种新型有机材料ZnTBP-CA-PhR的光学非线性吸收特性，此材料在激光作用下，在可见光区域具有反饱和吸收，再反饱和吸收和饱和吸收效应.同时发现该材料优良的光学限幅性能，不仅光限幅的阈值低，而且限幅前光透射呈线性状态没有光学非线性效应.用5能级结构模型及速率方程模拟了饱和及反饱和的实验曲线，分析了非线性吸收等的物理机理.     

基于高聚物光诱导激子漂白的无腔光学双稳态

基于已建立的高聚物光诱导激子漂白动力学理论，模拟计算了一类基态非简并高聚物在光激发和弛豫过程中的瞬态无腔光学双稳态．结果表明，基于高聚物的超快激发和弛豫，可获得瞬态饱和吸收型和增强吸收型无腔光学双稳态，其开关时间均在ps和fs量级．随着入射探测光脉冲相对入射泵浦光脉冲延迟时间的增加，无腔光学双稳态可由饱和吸收型向增强吸收型转变，转变的快慢与高聚物光诱导漂白的弛豫的快慢成正比 关键词：     

有机材料ZnTBP—CA—PhR的非线性吸收和光学限幅性能

报道了一种新型有机材料znTBP—CA—PhR的光学非线性吸收特性，此材料在激光作用下，在可见光区域具有反饱和吸收，再反饱和吸收和饱和吸收效应．同时发现该材料优良的光学限幅性能，不仅光限幅的阈值低，而且限幅前光透射呈线性状态没有光学非线性效应．用5能级结构模型及速率方程模拟了饱和及反饱和的实验曲线，分析了非线性吸收等的物理机理．     

酞菁铜非共振反饱和吸收的稳态特性

酞菁铜溶液在波长532nm调Q激光作用下,实验获得反饱和吸收特性.在稳态条件下,用速率方程理论推得分别描述薄样品和厚样品的反饱和吸收特性的两个解析式,理论分析与实验结果一致.     

基于反饱和吸收和自聚集两种效应的光限幅器

用酞菁酮金属有机染料首次演示了基于反饱和吸收和自聚焦两种效应的光限幅器。实验和理论分析表明，这种限幅器的输入阈值功率由反饱和吸收决定，而自聚焦使限幅器的最大限幅输出功率降低，限幅效果显著增强。     

基于NH2D气体斯塔克效应的光学双稳态

报道一种由NH_2D气体斯塔克盒和光电反馈控制回路构成的无腔镜光学双稳装置.实验中观测了该装置的光学双稳性,实验结果与理论分析相一致.     

酞菁铜染料的反饱和吸收动力学

本文用速率方程研究了酞菁铜染料氯仿溶液的反饱和吸收的动力学过程,并用YAG倍频调Q脉冲激光入射该样品,验证了理论.通过理论曲线与实验结果的拟合,估算出酞菁铜三重态激发态的吸收截面为2.6×10~(-17)cm~2.     

反饱和特性化合物锌四苯并卟吩巴豆酸苯氧树脂的光吸收谱测定

报道一种新型的有机材料锌—四苯并叶吩—巴豆酸—苯氧树脂(缩写为Zntbp—CA—PhR)体系薄膜样品的吸收谱的测定，及其主要吸收谱带在激光作用下的变化情况及动力学过程。实验观察到此种材料显著的饱和及反饱和吸收现象，并观察到它的再反饱和过程，定性分析了变化过程中的物理机制。这种特征在可见光波段一个较宽的区域内都会出现。所获结果为此种有机材料在光谱域信息存储和光学限制等方面的应用提供了理论和实验依据。     

Photovoltaic properties of a heterojunction based on copper phthalocyanine films on the surface of polycrystalline cadmium sulfide

The photovoltaic effect has been detected and studied in thin-film structures based on thermally deposited 200-nm-thick copper phthalocyanine (CuPc) films on the surface of polycrystalline CdS. The structures under study demonstrate the linear current-voltage characteristics at external electric fields to 3.5 × 10⁴ V/cm. Two components of the photovoltage of different signs have been revealed when the sample is illuminated in the wavelength range from 350 to 700 nm. The first component has the positive sign on the CuPc film side and is observed when using the radiation with a wavelength lesser than 500 nm, i.e., in conditions of predominant absorption of the radiation in the CdS layer. The second component has the negative sign on the CuPc film side and is observed when using the radiation with a wavelength in the range from 500 to 570 nm, corresponding to the spectral region of the absorption edge of the CuPc films. The dependences of the photovoltage on the radiation intensity studied in the range from 5 × 10¹² to 10¹⁴ photons cm^?2 s^?1 are different in the cases of the two detected components. Mechanisms of generation of the photovoltage components associated with a change in the band bending during photogeneration of charge carriers in the region of space charge in CdS and a change in conditions of the charge transfer in the interfacial CuPc/CdS region during the radiation absorption in the CuPc film have been proposed.     

Optical limiting response by embedding copper phthalocyanine into polymer host

The multilayer film of PMMA containing mononuclear octakis(mercaptopropylisobutyl-POSS) substituted phthalocyaninato-copper (CuPc) was obtained by spin-coating on quartz substrate. The nonlinear absorption and optical limiting (OL) performance of CuPc have been described using the open-aperture Z-scan technique. The measurements were performed using collimated 4 ns pulses generated from a frequency-doubled Nd:YAG laser at 532 nm wavelength. The results indicate that CuPc/PMMA composite exhibits a much larger nonlinear absorption coefficient, a lower saturable fluence and a lower absorption cross-section ratio for optical limiting when compared to the same CuPc molecules in solution. No evidence of film fatigue or degradation was observed in the CuPc/PMMA film after numerous scans at varying laser intensity. This material is a good candidate for optical limiting applications.     

酞菁铜固态薄膜的红外光谱

利用红外透射光谱，偏振透射光谱、掠角反射光谱研究了三－２，４－二特戊基苯氧基８－喹啉氧基酞菁铜ＬＢ膜和蒸镀膜的结构。确认在ＬＢ膜中，（１）取代基的碳链是以六方晶系或假六方晶系方式堆积的；（２）用偏振红外可以区别苯环上的两个ＣＨ２的伸缩振动带。在蒸镀膜中分子基本呈现无序状态。     

Effect of the material of metal nanoparticles on local field intensification in copper phthalocyanine

For spherical Cu, Ag, and Au nanoparticles with a radius of 1–3 nm in copper phthalocyanine (CuPc), with allowance for internal size effects, we calculate the scattering efficiency factor in the near zone, the extinction efficiency factor due to scattering and absorption of incident radiation, and the efficiency of the increase in absorption by the matrix material. This occurs in the CuPc absorption bands, as well as in the weak absorption region of CuPc, where, owing to surface plasmon resonance, an additional absorption band arises for nanoparticles of all three materials. For Ag nanoparticles, the increase in absorption is twice as high as for Cu and Au nanoparticles; for these it differs inconsiderably.     

Electronic structure of pristine CuPc: Experiment and calculations

The filled and unoccupied electronic states of the organic semiconductor copper-phthalocyanine (CuPc) have been determined by a combination of direct and resonant photoemission, near-edge X-ray absorption and first principles calculations. The experimentally obtained electronic states of CuPc are in very good agreement with results of ab initio density of states, allowing to derive detailed site specific information.     

Enhanced photosensitivity of InGaZnO-TFT with a CuPc light absorption layer

A copper phthalocyanine (CuPc) organic semiconductor is capped onto an amorphous indium–gallium–zinc-oxide (InGaZnO) thin film transistor (TFT) to enhance the photosensitivity of InGaZnO-TFT. The CuPc organic semiconductor is served as a light absorption layer and forms a p–n junction with the InGaZnO film. After 60 s white light illumination, light responsivity (R) of InGaZnO-TFT with a CuPc light absorption layer reaches a value of 148.5 A/W at a gate-source voltage (V_GS) of 20 V, which is much larger than that (31.2 A/W) of the conventional InGaZnO-TFT. The results are attributed to the following mechanism. First, a CuPc layer is employed as the light absorption layer. Second, CuPc/InGaZnO p–n junction enables the injection of electron into InGaZnO film. Our results indicate that using CuPc as light absorption layer is an effective approach to improve the photosensitivity of InGaZnO-TFT.     

Cu-phthalocyanine overlayers on ZnO (1\bar 100) surfaces

Photoconductivity measurements and ellipsometric spectroscopy have been used to study Cu-phthalocyanine (CuPc) overlayers on nonpolar ZnO (1 \(\bar 1\) 00) surfaces which have been prepared in ultrahigh vacuum (UHV). In the spectral range between 1.5 and 2 eV, i.e. in theπ→π ^* absorption band of CuPc a sensitized photoconductivity in the ZnO substrate is found. The analysis of the ellipsometric data suggests a chemisorption bond of the first monolayer of sublimated CuPc molecules accompanied by charge transfer between the ZnO substrate and the adsorbate. Bonding is most probably done through theπ-orbitals of the CuPc molecules.     

酞菁铜薄膜的光记录特性

研究了有机染料酞菁铜（ＣｕＰｃ）真空蒸镀薄膜在可见及近红外区域的吸收光谱和光学常数，发现酞菁铜薄膜在５５０－７５０ｎｍ波长范围内具有较强的吸收，在静态测试仪上测试了酞菁铜薄膜的光存储记录特性，发现用低功率氦氖激光照样品时薄膜反射率变化较大，在酞菁记录层上覆盖金属反射层将提高写入激光的阈值能量并且增大反射率的对比度。     

Ag(110)表面吸附酞菁铜分子的紫外光电子谱研究

用紫外光电子能谱(UPS)研究了酞菁铜分子在Ag(110)单晶表面上的吸附,随着酞菁铜分子覆盖度增加,衬底Ag的3d电子信号逐渐减弱,在此能带区域出现两个新的谱峰,这两个与吸附有机分子轨道有关的谱峰的束缚能分别为4.45 和6.36 eV.随着覆盖度的增加,在结合能为1.51和9.20 eV处又出现了两个谱峰,它们同样来自吸附有机分子的轨道.随着覆盖度的继续增加,上述四个谱峰的强度逐渐增加,其能量位置均发生了明显的偏移.根据角分辨光电子能谱的实验结果,酞菁铜分子的分子平面基本与衬底表面平行.密度泛函理论计 关键词： 酞菁铜 紫外光电子谱 吸附电子态 密度泛函理论