基于石墨烯电极的Co-Salophene分子器件的自旋输运

采用基于非平衡格林函数结合第一性原理的密度泛函理论的计算方法,研究了基于锯齿型石墨纳米带电极的Co-Salophene分子器件的自旋极化输运性质.计算结果表明,当左右电极为平行自旋结构时,自旋向上的电流明显大于自旋向下的电流,自旋向下的电流在[-1V,1V]偏压下接近零,分子器件表现出优异的自旋过滤效应.与此同时,在自旋向上电流中发现负微分电阻效应.当左右电极为反平行自旋结构时,器件表现出双自旋过滤和双自旋分子整流效应.除此之外,整个分子器件还表现出较高的巨磁阻效应.通过分析器件的自旋极化透射谱、局域态密度、电极的能带结构和分子自洽投影哈密顿量,详细解释该分子器件表现出众多特性的内在机理.研究结果对设计多功能分子器件具有重要的借鉴意义.     

Spin accumulation and domain wall magnetoresistance in 35 nm Co wires

An enhancement of the resistance due to the presence of only one or two isolated domain walls is clearly evidenced by transport measurements in 35 nm epitaxial Co wires, 20 &mgr;m long. The deduced relative change in the resistivity is at least 1 order of magnitude larger than the one predicted from a model based on the mixing of spin channels occurring over the length scale of the domain wall width [P. M. Levy and S. Zhang, Phys. Rev. Lett. 79, 5110 (1997)]. This inconsistency can be resolved by taking the effect of spin accumulation into account, which scales in the case of Co over the much larger distance of the spin diffusion length.     

Spin dependent mean-free path of low-energy electrons in ferromagnetic materials

Spin resolved attenuation measurements of electrons transmitted through overlayers of Fe and Co show that the electron inelastic mean free path (IMFP) in these materials is spin-dependent at low energies. The spin-up IMFP is larger than the spin-down IMFP. The values from different studies are in reasonable agreement. The data suggest that the origin of the spin dependence is mainly due to inelastic processes. Effects from spin dependent elastic scattering have not been identified directly in these experiments. The spin filter effect based on preferential attenuation of spin-down electrons can be used as a basis of spin polarization detectors.     

IrMn基反铁磁自旋阀的巨磁电阻效应

用第一性原理方法研究了在微观尺度具有三重对称磁结构的IrMn合金的反铁磁自旋阀(AFSV)的电子输运.研究表明:基于有序L1₂相IrMn合金的Co/Cu/IrMn自旋阀的巨磁电阻(GMR)效应具有三重对称性,可以利用这一特性区分反铁磁材料的GMR与传统铁磁材料的GMR.基于无序γ相IrMn合金的IrMn(0.84 nm)/Cu(0.42 nm)/IrMn(0.42 nm)/Cu(0.42 nm)(111) AFSV的电流平行平面构型的GMR约为7.7％,大约是电流垂直平面构型的GMR(3.4％)的两倍,明显大于实验中观测到的基于共线磁结构的FeMn基AFSV的GMR. 关键词： 反铁磁自旋阀 巨磁电阻效应 非共线磁结构 电流平行平面结构     

Dissipation of the spin wave energy in magnetic multilayer films

It is shown that the penetration of standing spin waves into a layer with high damping is one of the channels of energy dissipation of these waves. The line broadening of spin wave modes due to this layer increases with the mode index and may be much larger than the natural linewidth associated with a layer having low damping. The linewidths of spin wave modes are found to be anisotropic, which is due to the dependence of the penetration depth of spin waves into the high-damping layer on the orientation of the external magnetic field with respect to the film. A theoretical model is proposed, which is consistent with the experimental data.     

Large Magnetoresistance Based on Double Spin Filter Tunnel Barriers

We propose and theoretically analyse a double magnetic tunnel device that takes advantages of the spin filter effect. Two magnetic tunnel barriers are formed by different spin filters which have different barrier heights. The magnetoresistance of the device is low （high） when the magnetic moments of the two spin filters are parallel （antiparallel）. We present a theoretical calculation of the magnetoresistance based on electric tunnel effect. In addition, the effect of the difference barrier heights and exchange splitting energies between the two spin filters are also analysed in detail. The numerical results show that the spin filter in this configuration gives a magnetoresistance larger than that with standard magnetic tunnel junctions.     

A criterion for the existence of spin waves in polarized gases in a wide temperature range

We derive a kinetic equation for a polarized paramagnetic gas that is exact in the Boltzmann (binary) approximation. The equation is written in a compact form and applies to both Fermi and Bose gases in a wide temperature range as long as the Boltzmann approximation remains applicable. The derived equation is used to analyze the conditions for the propagation of spin waves in polarized Fermi and Bose gases. We deduce a universal criterion for the propagation of weakly damped spin waves in a wide temperature range. The criterion is reduced to the condition that the real parts of the particle zero-angle scattering amplitudes (or T matrices) be much larger than their imaginary parts. We derive dispersion equations for spin waves at high and low gas temperatures and show that spin waves can propagate in both these limiting cases.     

Antiferromagnetism of nuclear matter in the model with effective Gogny interaction

The possibility of ferromagnetic (FM) and antiferromagnetic (AFM) phase transitions in symmetric nuclear matter is analyzed within the framework of a Fermi liquid theory with effective Gogny interaction. It is shown that, at some critical density, nuclear matter with the D1S effective force undergoes a phase transition to the AFM spin state (opposite directions of neutron and proton spins). The self-consistent equations of spin-polarized nuclear matter with the D1S force have no solutions corresponding to FM spin ordering (the same direction of neutron and proton spins) and, hence, the FM transition does not appear. The AFM spin polarization parameter is found for zero and finite temperature. It is shown that the AFM spin polarization parameter of partially polarized nuclear matter at low enough temperatures increases with temperature. The entropy of the AFM spin state for some temperature range is larger than the entropy of the normal state. Nevertheless, the free energy of the AFM spin state is always less than the free energy of the normal state, and the AFM spin-polarized state is preferable for all temperatures below the critical temperature. The text was submitted by the authors in English.     

Effect of resistance feedback on spin torque-induced switching of nanomagnets

In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of magnetic tunnel junctions, and show that magnetization switching is only affected by capacitive shunting in the pF range.     

Quantum Correlation in Matrix Product States of One-Dimensional Spin Chains

For our proposed composite parity-conserved matrix product state (MPS), if only a spin block length is larger than 1, any two such spin blocks have correlation including classical correlation and quantum correlation. Both the total correlation and the classical correlation become larger than that in any subcomponent; while the quantum correlations of the two nearest-neighbor spin blocks and the two next-nearest-neighbor spin blocks become smaller and for other conditions the quantum correlation becomes larger, i.e., the increase or the production of the long-range quantum correlation is at the cost of reducing the short-range quantum correlation, which deserves to be investigated in the future; and the ration of the quantum correlation to the total correlation monotonically decreases to a steady value as the spacing spin length increasing.     

Quantum Correlation in Matrix Product States of One-Dimensional Spin Chains

For our proposed composite parity-conserved matrix product state(MPS), if only a spin block length is larger than 1, any two such spin blocks have correlation including classical correlation and quantum correlation. Both the total correlation and the classical correlation become larger than that in any subcomponent; while the quantum correlations of the two nearest-neighbor spin blocks and the two next-nearest-neighbor spin blocks become smaller and for other conditions the quantum correlation becomes larger, i.e., the increase or the production of the long-range quantum correlation is at the cost of reducing the short-range quantum correlation, which deserves to be investigated in the future; and the ration of the quantum correlation to the total correlation monotonically decreases to a steady value as the spacing spin length increasing.     

Spin susceptibilities of metals in the liquid state

Conduction electron spin susceptibility values are deduced for the 18 liquid metals for which total magnetic susceptibility data are available in the literature. A “best” set of ionic susceptibility values is chosen using the criterion that the electronic susceptibilities should not show a marked systematic dependence upon atomic number for a given valency. The results strongly suggest that the spin susceptibility is quite generally 10–15% larger than that predicted by current theoretical calculations of the electron-electron enhancement in a Fermi liquid.     

Interface resistance dependence of spin transport in a ferromagnet–semiconductor hybrid structure

The spin transport signals from NiFe and Co into two-dimensional electron gas layers are measured for various thicknesses of transmission barriers. A stable and reproducible electrical detection of spin transport was obtained only when the barrier thickness is less than 10 nm. The typical interface resistance to observe spin signals in this experiment is about 0.5–250 Ω, which is a neither transparent nor a severe tunneling limit. The optimal interface resistance depends on the ferromagnetic materials, but severe tunneling barrier is not proper for fully electrical spin transport. Device size is also a critical factor to decide the proper range of interface resistance.     

Effect of electric-field on spin transport and spin current in an organic semiconductor system

We use the two-component drift-diffusion model to study the spin density polarization in an organic semiconductor system under an external electric-field. The spin-dependent electrical-conductivity, the drift spin current and the diffusion spin current in the organic semiconductor are self-consistently derived. It is found that the spin current could be strongly influenced by the spin-dependent electrical-conductivity. When the spin-dependent conductivity varies from 0 to 0.5%, the spin current presents a very pronounced change almost three orders in magnitude. The electric-field could effectively enhance the spin-dependent electrical-conductivity and the spin current. Furthermore, the spin-dependent electrical-conductivity is position sensitive, but its position sensitivity goes down while electric-field is larger than about 1 mV/μm.     

Polarized nonequilibrium Bose-Einstein condensates of spinor exciton polaritons in a magnetic field

The effect of a magnetic field on a spinor exciton-polariton condensate has been investigated. A quenching of a polariton Zeeman splitting and an elliptical polarization of the condensate have been observed at low magnetic fields B<2 T. The effects are attributed to a competition between the magnetic field induced circular polarization buildup and the spin-anisotropic polariton-polariton interaction which favors a linear polarization. The sign of the circular polarization of the condensate emission at B<3 T is negative, suggesting that a dynamic condensation in the excited spin state rather than the ground spin state takes place in this magnetic field range. From about 2T on, the Zeeman splitting opens and from then on the slope of the circular polarization degree changes its sign. For magnetic fields larger than the 3 T, the upper spin state occupation is energetically suppressed and circularly polarized condensation takes place in the ground state.     

Intrinsic contribution to spin Hall and spin Nernst effects in a bilayer graphene

We consider intrinsic contributions to the spin Hall and spin Nernst effects in a bilayer graphene. The relevant electronic spectrum is obtained from the tight binding Hamiltonian, which also includes the intrinsic spin-orbit interaction. The corresponding spin Hall and spin Nernst conductivities are compared with those obtained from effective low-energy k ?p and reduced Hamiltonians, which are appropriate for states in the vicinity of the Fermi level of a neutral bilayer graphene. Both conductivities are determined within the linear response theory and Green function formalism. The influence of an external voltage between the two atomic sheets is also considered. The results reveal a transition from the topological spin Hall insulator phase at low voltages to conventional insulator phase at larger voltages.     

Anisotropic low temperature thermal resistance in polycrystalline magnetic thin films

The scattering of spin waves and the thermal resistance due to this scattering are calculated for polycrystalline magnetic thin films with a small overall uniaxial anisotropy. The scattering is caused by the random orientation of crystallites, and also by the magnetization ripple, which is likewise produced by this random orientation. The wavelength spectra of the ripple and of the spin waves at low energy are essentially influenced by the magnetostatic interaction, which is taken into account within Harte's linearized thin film approximation, and for comparison also within Hoffmann's approximation. Due to the anisotropy of the spectra, the contribution of the spin waves to the thermal resistance of permalloy films should be highly anisotropic at temperatures of 2 K and below.     

Spin diffusion in semiconductors

The behavior of spin diffusion in doped semiconductors is shown to be qualitatively different than in undoped (intrinsic) ones. Whereas a spin packet in an intrinsic semiconductor must be a multiple-band disturbance, involving inhomogeneous distributions of both electrons and holes, in a doped semiconductor a single-band disturbance is possible. For n-doped nonmagnetic semiconductors the enhancement of diffusion due to a degenerate electron sea in the conduction band is much larger for these single-band spin packets than for charge packets-this explains the anomalously large spin diffusion recently observed in n-doped GaAs at 1.6 K. In n-doped ferromagnetic and semimagnetic semiconductors the motion of spin packets polarized antiparallel to the equilibrium carrier spin polarization is predicted to be an order of magnitude faster than for parallel polarized spin packets. These results are reversed for p-doped semiconductors.     

The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu,Au, Co,Ni) molecular devices based on zigzag graphene nanoribbon electrodes

The spin-dependent electronic transport properties of M(dcdmp)₂ (M = Cu, Au, Co, Ni; dcdmp = 2,3-dicyano-5,6-dimercaptopyrazyne) molecular devices based on zigzag graphene nanoribbon (ZGNR) electrodes were investigated by density functional theory combined nonequilibrium Green's function method (DFT-NEGF). Our results show that the spin-dependent transport properties of the M(dcdmp)₂ molecular devices can be controlled by the spin configurations of the ZGNR electrodes, and the central 3d-transition metal atom can introduce a larger magnetism than that of the nonferrous metal one. Moreover, the perfect spin filtering effect, negative differential resistance, rectifying effect and magnetic resistance phenomena can be observed in our proposed M(dcdmp)₂ molecular devices.     

A precision determination of the hyperfine splitting of muonium in quartz

We report a precise measurement of the hyperfine interval of muonium in single crystal quartz at room temperature, using the muon spin rotation technique. The measured value is about 1% larger than the vacuum value. Our results also confirm a small anisotropy previously reported.